M30W0R7000B1 (STMicroelectronics)
Electronic component documentation (datasheet) «M30W0R7000B1» (Multi Chip Memory), manufacturer STMicroelectronics. Download datasheet file:
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| Partname | M30W0R7000B1 |
| Description | 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUPPLY VOLTAGE VDD = 1.7V to 2V for Program, Erase and Read VDDQ = 1.7V to 2.24V for I/O Buffers VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ Synchronous Burst Read mode: 66MHz Asynchronous/ Synchronous Page Read mode Random Access: 60ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME 8s by Word typical for Fast Factory Program Double/Quadruple Word Program option Enhanced Factory Program options MEMORY BLOCKS Multi |
| Functional | Multi Chip Memory | | Manufacturer | STMicroelectronics |  |
| Site | www.st.com |
| | | Size | Pages: 0, 1.27Mb |
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