ChipFind.ru | DataSheet | Cross-reference
Archive 1.687.043 components

Russian language 
Datasheets     Cross-reference     Online-stockChipFind
Search fieldComponent part nameManufacturer

M30W0R7000B1 (STMicroelectronics)

Electronic component documentation (datasheet) «M30W0R7000B1» (Multi Chip Memory), manufacturer STMicroelectronics. Download datasheet file:



Datasheet M30W0R7000B1 manufacturer STMicroelectronics
PartnameM30W0R7000B1
Description128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUPPLY VOLTAGE VDD = 1.7V to 2V for Program, Erase and Read VDDQ = 1.7V to 2.24V for I/O Buffers VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ Synchronous Burst Read mode: 66MHz Asynchronous/ Synchronous Page Read mode Random Access: 60ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME 8s by Word typical for Fast Factory Program Double/Quadruple Word Program option Enhanced Factory Program options MEMORY BLOCKS Multi
FunctionalMulti Chip Memory
ManufacturerSTMicroelectronicsSTMicroelectronics
Sitewww.st.com
SizePages: 0, 1.27Mb
Download file Adobe PDF
WinZIP archive
Preview HTML priview
In this file
M30W0R7000B1, M30W0R7000B1ZAQF