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Electronic components list Toshiba, page 12

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TC55257DPL-55L - 32,768 WORD-8 BIT STATIC RAM
TC55257DPL-55V - MOS DIGITAL INTEGRATED CIRCUIT
TC55257DPL-70L - 32,768 WORD-8 BIT STATIC RAM
TC55257DPL-70V - MOS DIGITAL INTEGRATED CIRCUIT
TC55257DPL-85L - 32,768 WORD-8 BIT STATIC RAM
TC55257DPL-85V - MOS DIGITAL INTEGRATED CIRCUIT
TC55257DTRI - STATIC RAM
TC55257DTRI-70L - 32,768 WORD x 8 BIT STATIC RAM
TC55257DTRI-85L - 32,768 WORD x 8 BIT STATIC RAM
TC55257DTRL - 32,768 WORD-8 BIT STATIC RAM
TC55257DTRL-55L - 32,768 WORD-8 BIT STATIC RAM
TC55257DTRL-55V - MOS DIGITAL INTEGRATED CIRCUIT
TC55257DTRL-70L - 32,768 WORD-8 BIT STATIC RAM
TC55257DTRL-70V - MOS DIGITAL INTEGRATED CIRCUIT
TC55257DTRL-85L - 32,768 Word-8 Bit Static Ram
TC55257DTRL-85V - MOS DIGITAL INTEGRATED CIRCUIT
TC55328P-17 - 32,768 WORD X 8 BIT CMOS STATIC RAM
TC55328P-20 - 32,768 WORD X 8 BIT CMOS STATIC RAM
TC55328P-25 - 32,768 WORD X 8 BIT CMOS STATIC RAM
TC55328P-35 - 32,768 WORD X 8 BIT CMOS STATIC RAM
TC55329J - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC55329J-17 - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC55329J-20 - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC55329J-25 - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC55329J-35 - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC55329P - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC55329P-17 - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC55329P-20 - 32,768 Word X 9 Bit Cmos Static Ram
TC55329P-25 - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC55329P-35 - 32,768 WORD x 9 BIT CMOS STATIC RAM
TC554001 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001-10 - Density = 4M ; Organization = 512Kx8 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554001-70 - Density = 4M ; Organization = 512Kx8 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554001-85 - Density = 4M ; Organization = 512Kx8 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554001A - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001AF - 524,228 Words X 8 Bit Static Ram
TC554001AF-10 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AF-10L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AF-10V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001AF-70 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AF-70L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AF-70V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001AF-85 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AF-85L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AF-85V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001AFI - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFI-10 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFI-10L - 524,228 Words X 8 Bit Static Ram
TC554001AFI-70 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFI-70L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFI-85 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFI-85L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFT-10 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFT-10L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFT-10V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001AFT-70 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFT-70L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFT-70V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001AFT-85 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFT-85L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFT-85V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001AFTI-10 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFTI-10L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFTI-70 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFTI-70L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFTI-85 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AFTI-85L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001AI - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Industrial Temp ; Speed(ns) = 70, 85 ; Comment =
TC554001AI-V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Industrial Temp, Low Voltage Tolerant ; Speed(ns) = 70, 85 ; Comment =
TC554001A - 524,288 Words X 8-bit SRAM
TC554001ATR-10 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATR-10L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATR-10V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001ATR-70 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATR-70L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATR-70V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001ATR-85 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATR-85L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATR-85V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554001ATRI-10 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATRI-10L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATRI-70 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATRI-70L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATRI-85 - 524,228 WORDS x 8 BIT STATIC RAM
TC554001ATRI-85L - 524,228 WORDS x 8 BIT STATIC RAM
TC554001A-V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Low Voltage Tolerant ; Speed(ns) = 70, 85 ; Comment =
TC554001F - 524,288 Words X 8-bit SRAM
TC554001FI - 524,288 Words X 8bit Static Ram
TC554001FI-10 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FI-10L - 524,288 Words X 8-bit SRAM
TC554001FI-85 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FI-85L - 524,288 Words X 8-bit SRAM
TC554001FI-XX - 524,288-word BY 8-bit CMOS Static RAM: 512kx8
TC554001FL - 524,288 WORDS x 8BIT STATIC RAM
TC554001FL-10 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FL-10V - 524,288 Words X 8-bit SRAM
TC554001FL-70 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FL-70L - 524,288 WORDS x 8BIT STATIC RAM
TC554001FL-70V - 524,288 Words X 8-bit SRAM
TC554001FL-85 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FL-85V - 524,288 Words X 8-bit SRAM
TC554001FT - 524,288-word BY 8-bit CMOS Static RAM: 512kx8
TC554001FTI-10 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FTI-10L - 524,288-word BY 8-bit CMOS Static RAM: 512kx8
TC554001FTI-85 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FTI-85L - 524,288-word BY 8-bit CMOS Static RAM: 512kx8
TC554001FTL-10 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FTL-10V - 524,288-word BY 8-bit CMOS Static RAM: 512kx8
TC554001FTL-70 - 524,288 Words X 8bit Static Ram
TC554001FTL-70L - 524,288 WORDS x 8BIT STATIC RAM
TC554001FTL-70V - 524,288-word BY 8-bit CMOS Static RAM: 512kx8
TC554001FTL-85 - 524,288 WORDS x 8BIT STATIC RAM
TC554001FTL-85V - 524,288-word BY 8-bit CMOS Static RAM: 512kx8
TC554001I - Density = 4M ; Organization = 512Kx8 ; VDD = 5V ; Speed = 85,100ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554001I-L - Density = 4M ; Organization = 512Kx8 ; VDD = 5V ; Speed = 85 ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554001I-V - Density = 4M ; Organization = 512Kx8 ; VDD = 5V ; Speed = 85 ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554001-L - Density = 4M ; Organization = 512Kx8 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554001-V - Density = 4M ; Organization = 512Kx8 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Recomend to Use A-version ; Additional Information =
TC554161 - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161-10 - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161-10L - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161-70 - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161-70L - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161-85 - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161-85L - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161A - Organization = 256Kx16 ; VDD(V) = 5 ; Package = 54pin Tsop ii ; Functionlity = Std. and Low Power ; Speed(ns) = 70, 85 ; Comment =
TC554161AFT - 4m CMOS SRAM 256k X 16
TC554161AFT-10 - 262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-10L - 262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-70 - 262,144-word By 16-bit Static Ram
TC554161AFT-70L - 262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-85 - 262,144-WORD BY 16-BIT STATIC RAM
TC554161AFT-85L - 262,144-WORD BY 16-BIT STATIC RAM
TC554161AFTI - 4m CMOS SRAM 256k X 16
TC554161AFTI-10 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC554161AFTI-10L - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC554161AFTI-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC554161AFTI-70L - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC554161AFTI-85 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC554161AFTI-85L - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC554161AFTI-L - 4m CMOS SRAM 256k X 16
TC554161AFT-L - 4m CMOS SRAM 256k X 16
TC554161AFT-V - 4m CMOS SRAM 256k X 16
TC554161AI - Organization = 256Kx16 ; VDD(V) = 5 ; Package = 54pin Tsop ii ; Functionlity = Industrial Temp ; Speed(ns) = 70, 85 ; Comment =
TC554161AI-L -
TC554161A-L -
TC554161A-V - Organization = 256Kx16 ; VDD(V) = 5 ; Package = 54pin Tsop ii ; Functionlity = Low Voltage Tolerant ; Speed(ns) = 70, 85 ; Comment =
TC554161FTI - 262,144-WORD BY 16-BIT STATIC RAM
TC554161FTI-10 - 262,144-word By 16-bit Static Ram
TC554161FTI-10L - 262,144-WORD BY 16-BIT STATIC RAM
TC554161FTI-85 - 262,144-WORD BY 16-BIT STATIC RAM
TC554161FTI-85L - 262,144-word By 16-bit Static Ram
TC554161FTL - 262,144-word By 16-bit Static Ram
TC554161FTL-10 - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161FTL-10L - 262,144-word By 16 Bit Static Ram
TC554161FTL-10V - 262,144-WORD BY 16-BIT STATIC RAM
TC554161FTL-70 - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161FTL-70L - 262,144-WORD BY 16 BIT STATIC RAM
TC554161FTL-70V - 262,144-WORD BY 16-BIT STATIC RAM
TC554161FTL-85 - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161FTL-85L - 262,144-WORD BY 16 BIT STATIC RAM
TC554161FTL-85V - 262,144-WORD BY 16-BIT STATIC RAM
TC554161I - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 85,100ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161I-L - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 85,100ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161-L - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85 ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC554161-V - Density = 4M ; Organization = 256Kx16 ; VDD = 5V ; Speed = 70,85ns ; Comment = Low Power SRAM ; Status = Eol, Use A-version ; Additional Information =
TC5564 - 8,192 WORD X 8 BIT CMOS STATIC RAM
TC5564AFL-15 - 8,192 WORD X 8 BIT CMOS STATIC RAM
TC5564AFL-20 - 8,192 Word X 8 Bit Cmos Static Ram
TC5564APL-15 - 8,192 WORD X 8 BIT CMOS STATIC RAM
TC5564APL-20 - 8,192 WORD X 8 BIT CMOS STATIC RAM
TC5565 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
TC5565AFL-10 - 65,536 Bit Static Random Access Memory Organized As 8,192 Words By 8 Bits Using Cmos Technology
TC5565AFL-12 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
TC5565AFL-15 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
TC5565APL - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
TC5565APL-10 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
TC5565APL-12 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
TC5565APL-15 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
TC558128AJ - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC558128AJ-15 - 131,072-word By 8-bit Cmos Static Ram
TC558128AJ-20 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC558128BFT - 1m CMOS Static RAM: 128kx8
TC558128BFT-12 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC558128BFT-15 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC558128BJ - 131,072-word By 8-bit Cmos Static Ram
TC558128BJ-12 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC558128BJ-15 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55BS8128J-10 - 131072 Word X 8 Bit Synchronous Static Ram
TC55BS8128J-12 - 131072 WORD X 8 BIT SYNCHRONOUS STATIC RAM
TC55NEM208A - Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55NEM208AFPN - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN55 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN70 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN55 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN70 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208A-V - Organization = 512Kx8 ; VDD(V) = 5 ; Package = 32-pin Sop, Tsopii ; Functionlity = Low Voltage Tolerant ; Speed(ns) = 55, 70 ; Comment =
TC55NEM216AFTN - Organization = 256Kx16 ; VDD(V) = 5 ; Package = 54pin Tsop ii ; Functionlity = Full CMOS ; Speed(ns) = 55, 70 ; Comment =
TC55NEM216AFTN55 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216AFTN70 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55NEM216AFTNV - Organization = 256Kx16 ; VDD(V) = 5 ; Package = 54pin Tsop ii ; Functionlity = Low Voltage Tolerant ; Speed(ns) = 55, 70 ; Comment =
TC55NEM216ASTV - Organization = 256Kx16 ; VDD(V) = 5 ; Package = 44pin Tsop ii ; Functionlity = Low Voltage Tolerant ; Speed(ns) = 55, 70 ; Comment =
TC55NEM216ASTV55 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55NEM216ASTV70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V040A - Organization = 512Kx8 ; VDD(V) = 3 ; Package = 40-pin Tsopi ; Functionlity = Full CMOS ; Speed(ns) = 55, 70 ; Comment = Recommend Shrink Parts
TC55V040AFT-55 - 524,288-word By 8-bit Full Cmos Static Ram
TC55V040AFT-70 - 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55V1001AF - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AF-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AF-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AF-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AF-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFI - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFI-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFI-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFI-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFI-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFT-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFT-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFT-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFT-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFTI-10 - 131,072-word By 8-bit Cmos Static Ram
TC55V1001AFTI-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFTI-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AFTI-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASR-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASR-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASR-85 - 131,072-word By 8-bit Cmos Static Ram
TC55V1001ASR-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASRI-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASRI-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASRI-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASRI-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AST-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AST-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AST-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001AST-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASTI-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASTI-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASTI-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ASTI-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ATR-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ATR-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ATR-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ATR-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ATRI-10 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ATRI-10L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ATRI-85 - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001ATRI-85L - 131,072-WORD BY 8-BIT CMOS STATIC RAM
TC55V1001F - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001F-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001F-10L - 131,072 Word By 8 Bit Static Ram
TC55V1001F-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001F-85L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FI - 131,072 Word By 8 Bit Static Ram
TC55V1001FI-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FI-10L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V1001FI-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FI-85L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V1001FT-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FT-10L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FT-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FT-85L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FTI-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FTI-10L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V1001FTI-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001FTI-85L - 131,072-word By 8-bit Static Ram
TC55V1001SR-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001SR-10L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001SR-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001SR-85L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001SRI-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001SRI-10L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V1001SRI-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001SRI-85L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V1001ST-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001ST-10L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001ST-85 - 131,072 Word By 8 Bit Static Ram
TC55V1001ST-85L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001STI-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001STI-10L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V1001STI-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001STI-85L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V1001TR-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001TR-10L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001TR-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001TR-85L - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001TRI-10 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001TRI-10L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V1001TRI-85 - 131,072 WORD BY 8 BIT STATIC RAM
TC55V1001TRI-85L - 131,072-WORD BY 8-BIT STATIC RAM
TC55V11601 - Density = 16Mb ; Organization = 16M X 1 ; Speed (ns) = 15 ; Package = Tsop ; Voltage (V) = 3.3 ; Comments =
TC55V11601FT - 16,777,216-word BY 1-bit CMOS Static RAM
TC55V11601FT-15 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V1325FF - 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TC55V1325FF-10 - 32,768-word By 32-bit Synchronous Pipelined Burst Static Ram
TC55V1325FF-12 - 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TC55V1325FF-7 - 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TC55V1325FF-8 - 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TC55V1326AFF - 32,768-word By 32-bit Synchronous Pipelined Burst Static Ram
TC55V1326AFF-66 - 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TC55V1403 - Density = 4Mb ; Organization = 4Mx1/1Mx4 ; VDD = 12,15 ; Speed = Soj, Tsop ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1403-15 - Density = 4Mb ; Organization = 4Mx1/1Mx4 ; VDD = 12,15 ; Speed = Soj, Tsop ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1403-20 - Density = 4Mb ; Organization = 4Mx1/1Mx4 ; VDD = 12,15 ; Speed = Soj, Tsop ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1403-25 - Density = 4Mb ; Organization = 4Mx1/1Mx4 ; VDD = 12,15 ; Speed = Soj, Tsop ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1403FT-15 - 4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
TC55V1403FT-20 - 4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
TC55V1403J - 4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
TC55V1403J-15 - 4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
TC55V1403J-20 - 4,194,304 Word By 1-bit/1,048,576 Word By 4 Bit Cmos Static Ram
TC55V16100 - Density = 16Mb ; Organization = 1M X 16 ; Speed (ns) = 12,15 ; Package = Tsop ; Voltage (V) = 3.3 ; Comments =
TC55V16100FT-10 - MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
TC55V16100FT-12 - Mos Digital Integrated Circuit Silicon Cmos
TC55V16100FT-15 - MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
TC55V16100FTI-12 - Mos Digital Intergrated Circuit Silicon Gate Cmos
TC55V16100FTI-15 - MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS
TC55V16176FF - Organization = 1Mx18 ; Speed = 133,150,167MHz ; VDD(V) = 3.3 ; Functionality = Pipeline Burst, 2E2D ; Package = 100 LQFP
TC55V16186FF - Organization = 1Mx18 ; Speed = 133,150,167MHz ; VDD(V) = 3.3 ; Functionality = Pipeline Burst, 2E1D ; Package = 100 LQFP
TC55V16186FFI - Organization = 1Mx18 ; Speed = 133,150MHz ; VDD(V) = 3.3 ; Functionality = Pipeline Burst, 2E1D, I-temp ; Package = 100 LQFP
TC55V16256 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256-12 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256-15 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256-20 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256-25 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256FT-12 - 262,144-word By 16-bit Cmos Static Ram
TC55V16256FT-15 - 262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55V16256FTI - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55V16256FTI-12 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V16256FTI-15 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V16256I - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Industrial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256I-12 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Industrial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256I-15 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Industrial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256I-20 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Industrial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256I-25 - Density = 4Mb ; Organization = 256Kx16 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Industrial Temp ; Status = Use TC55VZM216A ; Additional Information =
TC55V16256J - 262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55V16256J-12 - 262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55V16256J-15 - 262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55V16256JI - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V16356FF - Organization = 128Kx36 ; Speed = 133,150,167MHz ; VDD(V) = 3.3 ; Functionality = Pipeline Burst, 2E2D ; Package = 100 LQFP
TC55V16366FF - Organization = 512kx36 ; Speed = 133,150,167MHz ; VDD(V) = 3.3 ; Functionality = Pipeline Burst, 2E1D ; Package = 100 LQFP
TC55V16366FFI - Organization = 512kx36 ; Speed = 133,150MHz ; VDD(V) = 3.3 ; Functionality = Pipeline Burst, 2E1D, I-temp ; Package = 100 LQFP
TC55V16648BBFT-10 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V16648BBFT-12 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V16648BBFT-15 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V16648BJ - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V16648BJ-10 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V16648BJ-12 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V16648BJ-15 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V1664B - Density = 1Mb ; Organization = 64Kx16 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1664B-10 - Density = 1Mb ; Organization = 64Kx16 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1664B-12 - Density = 1Mb ; Organization = 64Kx16 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1664B-15 - Density = 1Mb ; Organization = 64Kx16 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1664B-20 - Density = 1Mb ; Organization = 64Kx16 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V1664BFT-10 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
TC55V1664BFT-12 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
TC55V1664BFT-15 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
TC55V1664BJ-10 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
TC55V1664BJ-12 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
TC55V1664BJ-15 - Mos Digital Integrated Circuit Silicon Gate Cmos 65,536-word By 16 Bit Cmos Static Ram
TC55V1664FT-12 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V1664FT-13 - 65,536-word By 16-bit Cmos Static Ram
TC55V1664FT-15 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V1664J-12 - 65,536-word By 16-bit Cmos Static Ram
TC55V1664J-15 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V1864FT-15 - 65,536-word By 16-bit Cmos Static Ram
TC55V1864J - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V1864J-15 - 65,536-WORD BY 16-BIT CMOS STATIC RAM
TC55V2001FI - 262,144-word By 8-bit Static Ram
TC55V2001FI-10 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FI-10L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FI-85 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FI-85L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FRI-10 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FRI-10L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FRI-85 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FRI-85L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FTI-10 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FTI-10L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FTI-85 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001FTI-85L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001SRI-10 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001SRI-10L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001SRI-85 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001SRI-85L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001STI-10 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001STI-10L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001STI-85 - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2001STI-85L - 262,144-WORD BY 8-BIT STATIC RAM
TC55V2161FT - 131,072 Word By 16 Bit Static Ram
TC55V2161FT-10 - 131,072 WORD BY 16 BIT STATIC RAM
TC55V2161FT-10L - 131,072 WORD BY 16 BIT STATIC RAM
TC55V2161FT-85 - 131,072 WORD BY 16 BIT STATIC RAM
TC55V2161FT-85L - 131,072 WORD BY 16 BIT STATIC RAM
TC55V2161FTI - 131,072 WORD BY 16 BIT STATIC RAM
TC55V2161FTI-10 - 131,072 WORD BY 16 BIT STATIC RAM
TC55V2161FTI-10L - 131,072 WORD BY 16 BIT STATIC RAM
TC55V2161FTI-85 - 131,072 WORD BY 16 BIT STATIC RAM
TC55V2161FTI-85L - 131,072 Word By 16 Bit Static Ram
TC55V2325FF - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55V2325FF-100 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V2325FF-7 - Density = 2M ; Organization = 64Kx32 ; VDD = 3.3V ; Speed = 66MHz ; Comment = Pbsram ; Status = Eol ; Additional Information =
TC55V328BFT-12 - 32,768 Word-8 Bit Static Ram
TC55V328BFT-15 - 32,768 WORD-8 BIT STATIC RAM
TC55V328BJ - 32,768 WORD-8 BIT STATIC RAM
TC55V328BJ-12 - 32,768 WORD-8 BIT STATIC RAM
TC55V328BJ-15 - 32,768 WORD-8 BIT STATIC RAM
TC55V4000 - Organization = 512Kx8 ; VDD(V) = 3 ; Package = 32-pin Stsopi ; Functionlity = Full CMOS ; Speed(ns) = 55, 70 ; Comment = Recommend Shrink Parts
TC55V4000ST-70 - 524,288-WORD BY 8-BIT STATIC RAM
TC55V4000ST-85 - 524,288-word By 8-bit Static Ram
TC55V400A -
TC55V400AFT-55 - 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55V400AFT-70 - 262,144-word By 16-bit Full Cmos Static Ram
TC55V400ST - 4mbit SRAM
TC55V4326FF - Density = 4Mb ; Organization = 128Kx32 ; VDD = 3.3V ; Speed = 133,150,167MHz ; Comment = Sync, Pipeline Burst ; Status = Eol, April \'03 ; Additional Information =
TC55V4326FF-133 - Mos Digital Integrated Circuit Silicon Gate Cmos
TC55V4326FF-150 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V4326FF-167 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V4336FF - Density = 4Mb ; Organization = 128Kx32 ; VDD = 3.3V ; Speed = 83,100MHz ; Comment = Sync, Flowthrough Burst ; Status = Eol, April \'03 ; Additional Information =
TC55V4356 - 131,072-word BY 36-bit Synchronous Pipeline Burst Static RAM
TC55V4366 - 131,072-word BY 36-bit Synchronous Pipeline Burst Static RAM
TC55V4366FF - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V4366FF-133 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V4366FF-150 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V4366FF-167 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55V4376FF - Density = 4Mb ; Organization = 128Kx36 ; VDD = 3.3V ; Speed = 83,100MHz ; Comment = Sync, Flowthrough Burst ; Status = Eol, April \'03 ; Additional Information =
TC55V4400 - Density = 16Mb ; Organization = 4M X 4 ; Speed (ns) = 12,15 ; Package = Tsop ; Voltage (V) = 3.3 ; Comments =
TC55V4400FT-10 - 4.194,304-word By 4-bit Cmos Static Ram
TC55V4400FT-12 - 4.194,304-WORD BY 4-BIT CMOS STATIC RAM
TC55V4400FT-15 - 4.194,304-WORD BY 4-BIT CMOS STATIC RAM
TC55V8128 - 1mb CMOS Static RAM: 128kx8
TC55V8128A-10 - 1mb CMOS Static RAM: 128kx8
TC55V8128A-12 - 1mb CMOS Static RAM: 128kx8
TC55V8128A-15 - 1mb CMOS Static RAM: 128kx8
TC55V8128A-20 - 1mb CMOS Static RAM: 128kx8
TC55V8128B - Density = 1Mb ; Organization = 128Kx8 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V8128B-10 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V8128B-12 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V8128B-15 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V8128B-20 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 8 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = ; Additional Information =
TC55V8128BFT-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8128BFT-12 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8128BFT-15 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55V8128BI - Density = 1Mb ; Organization = 128Kx8 ; VDD = 10,12 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = Industrial Temp ; Additional Information =
TC55V8128BI-12 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 10,12 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = Industrial Temp ; Additional Information =
TC55V8128BI-15 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 10,12 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = Industrial Temp ; Additional Information =
TC55V8128BI-20 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 10,12 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = Industrial Temp ; Additional Information =
TC55V8128BI-25 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 10,12 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = Industrial Temp ; Additional Information =
TC55V8128BI-30 - Density = 1Mb ; Organization = 128Kx8 ; VDD = 10,12 ; Speed = Soj, Tsopii ; Comment = 3.3 ; Status = Industrial Temp ; Additional Information =
TC55V8128BJ-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8128BJ-12 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8128BJ-15 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8200 - Density = 16Mb ; Organization = 2M X 8 ; Speed (ns) = 12,15 ; Package = Tsop ; Voltage (V) = 3.3 ; Comments =
TC55V8200F - 2,097,152-word BY 8-bit CMOS Static RAM
TC55V8200FT-10 - Mos Digital Integrated Circuit Silicon Gate Cmos
TC55V8200FT-12 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8200FT-15 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8512 - Density = 4Mb ; Organization = 512Kx8 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM208A ; Additional Information =
TC55V8512-12 - Density = 4Mb ; Organization = 512Kx8 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM208A ; Additional Information =
TC55V8512-15 - Density = 4Mb ; Organization = 512Kx8 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM208A ; Additional Information =
TC55V8512-20 - Density = 4Mb ; Organization = 512Kx8 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM208A ; Additional Information =
TC55V8512-25 - Density = 4Mb ; Organization = 512Kx8 ; VDD = 3.3V ; Speed = 12,15 ; Comment = Async, Commercial Temp ; Status = Use TC55VZM208A ; Additional Information =
TC55V8512FT - 4m CMOS Static RAM: 512kx8
TC55V8512FT-12 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8512FT-15 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8512FTI-12 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8512FTI-15 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55V8512J - 4m CMOS Static RAM: 512kx8
TC55V8512J-12 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8512J-15 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55V8512JI-12 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V8512JI-15 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VBM316AFTN - Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55VBM316AFTN40 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VBM316AFTN55 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VBM316ASTN - Organization = 1Mx8/512kx16 ; VDD(V) = 3 ; Package = 48-pin Tsopi ; Functionlity = Full CMOS ; Speed(ns) = 40, 55 ; Comment =
TC55VBM316ASTN40 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VBM316ASTN55 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VBM416AFTN - Organization = 2Mx8/1Mx16 ; VDD(V) = 3 ; Package = 48-pin Tsopi ; Functionlity = Full CMOS ; Speed(ns) = 40, 55 ; Comment =
TC55VBM416AFTN55 - 1,048,576-word By 16-bit/2,097,152-word By 8-bit Full Cmos Static Ram
TC55VCM208ASTN - Organization = 512Kx8 ; VDD(V) = 3 ; Package = 40-pin Tsopi ; Functionlity = Full CMOS ; Speed(ns) = 40, 55 ; Comment =
TC55VCM208ASTN40 - 524,288-word By 8-bit Full Cmos Static Ram
TC55VCM208ASTN55 - 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55VCM216ASTN - Organization = 256Kx16 ; VDD(V) = 3 ; Package = 48-pin Tsopi ; Functionlity = Full CMOS ; Speed(ns) = 40, 55 ; Comment =
TC55VCM216ASTN40 - Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55VCM216ASTN55 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VD1618FF - Organization = 1Mx18 ; Speed = 133,150,167MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
TC55VD1618FF-133 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55VD1618FF-150 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VD1618FF-167 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VD1618FFI - Organization = 1Mx18 ; Speed = 133,150MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Pipeline Burst, I-temp ; Package = 100 LQFP
TC55VD1636FF - Organization = 512kx36 ; Speed = 133,150,167MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
TC55VD1636FFI - Organization = 512kx36 ; Speed = 133,150MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Pipeline Burst, I-temp ; Package = 100 LQFP
TC55VD836FF - Organization = 256Kx36 ; Speed = 133,143,150MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
TC55VD836FF-133 - Organization = 256Kx36 ; Speed = 133,143,150MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
TC55VD836FF-143 - Organization = 256Kx36 ; Speed = 133,143,150MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
TC55VD836FFI - Organization = 256Kx36 ; Speed = 133,143MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Pipeline Burst, I-temp ; Package = 100 LQFP
TC55VEM208ASTN - Organization = 512Kx8 ; VDD(V) = 3 ; Package = 32pin Tsop i ; Functionlity = Full CMOS ; Speed(ns) = 40, 55 ; Comment =
TC55VEM208ASTN40 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
TC55VEM208ASTN55 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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