GT10J311SM (Toshiba)
Electronic component documentation (datasheet) «GT10J311SM» (IGBTs (Insulated Gate Bipolar Transistors)), manufacturer Toshiba. Download datasheet file:
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| Partname | GT10J311SM |
| Description | Vces (V) = 600 ; Ic (A) = 10 ; Vce (sat) (V) = 2.7 ; PC (W) = 80 ; TRR Max (ns) = 200 ; Package = TO3P(SM) ; Main Application = Inverter/ups ; Feature = Power SMD |
| Functional | IGBTs (Insulated Gate Bipolar Transistors) | | Manufacturer | Toshiba Semiconductor |  |
| Site | www.semicon.toshiba.co.jp |
| | | Size | Pages: 7, 463.28Kb |
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