GT20J311SM (Toshiba)
Electronic component documentation (datasheet) «GT20J311SM» (IGBTs (Insulated Gate Bipolar Transistors)), manufacturer Toshiba. Download datasheet file:
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Partname | GT20J311SM |
Description | Vces (volts) = 600 ; Ic (amps) = 20 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4 ; Toff (usec) = 0.7 ; Additional Information = |
Functional | IGBTs (Insulated Gate Bipolar Transistors) | Manufacturer | Toshiba Semiconductor |  |
Site | www.semicon.toshiba.co.jp |
| Size | Pages: 7, 459.56Kb |
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