TC59YM916BKG40B (Toshiba)
Electronic component documentation (datasheet) «TC59YM916BKG40B» (DRAM), manufacturer Toshiba. Download datasheet file:
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Partname | TC59YM916BKG40B |
Description | The second generation 512-megabit XDRTM DRAMThe Rambus XDRTM DRAM device isA general purpose high-performance memory device suitable for use in abroad range of applications including computer memory, graphics, video, and any other application where highbandwidth and low latency are required.The 512Mb Rambus XDR DRAM device isA CMOS DRAM organized as 32M words by 16 bits. The use ofDifferential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while usingconventional syste |
Functional | DRAM | Manufacturer | Toshiba Semiconductor | |
Site | www.semicon.toshiba.co.jp |
| Size | Pages: 0, 3.82Mb |
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