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Электронный компонент: DB600-DB610

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Ratings at 25 C ambient temperature unless otherwise specified. Single phase, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
Average Forward Rectified Current, T = 60 C (Note 2)
C
o
Peak Forward Surge Current.
Tc = 60 C
O
Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method).
I
O
Continuous Power Dissipation in V
Region
@ T
=80 C (Heat Sink Temp)
(BR)
HS
o
PARAMETER (TEST CONDITIONS)
Maximum DC Blocking Voltage
Maximum Peak Recurrent Reverse Voltage
Working Peak Reverse Voltage
Series Number
V
RWM
V
RRM
V
R (RMS)
V
RM
SYMBOL
ADB ADB ADB
DB
DB
DB
DB
DB
DB
DB
AMPS
UNITS
VOLTS
P
RM
P
R
604
606
608
600
601
602
604
606
608
610
1000
400
600
800
50
100
200
400
600
800
RMS Reverse Voltage
400
n/a
n/a
280
420
560
35
70
140
280
420
700
560
Power Dissipation in V
Region for 100 S Square Wave
(BR)
CONTROLLED
AVALANCHE
NON-CONTROLLED
AVALANCHE
2
WATTS
Thermal Energy (Rating for Fusing) t < 8.3mSec
I t
2
127
AMPS
2
SEC
I
FSM
250
6
RATINGS
FEATURES
Data Sheet No. BRDB-600-1D
ABDB-600-1D
MECHANICAL SPECIFICATION
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248
U.S.A
18020 Hobart Blvd., Unit B
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
ACTUAL SIZE
BL
14.7
15.7
0.58
0.62
BH
5.8
6.9
0.23
0.27
D1
10.3
11.3
0.405
0.445
LL
19.0
n/a
n/a
0.75
LD
1.0
1.1
0.039
0.042
SYM
MILLIMETERS
INCHES
MIN
MIN
MAX
MAX
Case: Molded plastic, U/L Flammability Rating 94V-0
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case; positive lead at beveled corner
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.13 Ounces (3.6 Grams)
MECHANICAL DATA
BH
LL
LD
D1
D1
BL
BL
+
_
+
_
DT
DB602
SERIES DB600 - DB610 and ADB604 - ADB608
AC
AC
UL RECOGNIZED - FILE #E124962
Junction Operating and Storage Temperature Range
T
J
, T
STG
C
-55 to +150
VOLTS
pF
n/a
n/a
Minimum Avalanche Voltage
Maximum Avalanche Voltage
V
(BR) Min
V
(BR) Max
V
FM
See Note 5
See Note 5
C
J
Maximum Forward Voltage (Per Diode) at 6 Amps DC
Typical Junction Capacitance (Note 4)
0.95 (Typical < 0.9)
21
Typical Thermal Resistance, Junction to Case (Note 2)
R
JC
VOLTS
Maximum Reverse Current at Rated V
RM
@ T = 25 C
A
o
@T = 125 C
A
o
I
RM
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
ISO
1
50
A
2500
o
C/W
3.01 06db
NOTES:
(1) Bolt bridge on heat sink
silicon thermal compound between bridge and mounting surface for maximum heat transfer.
(2) Bridge mounted on 4.0" sq. x 0.11" thick (10.5cm sq. x 0.3cm) aluminum plate
(3) Bridge mounted on PC Board
0.375" (9.5mm)
(4) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(5) These bridges exhibit the avalanche characteristic at breakdown. If your application requires a specific breakdown voltage range, please contact us.
with #6 screw, using
with 0.5" sq. (12mm sq.) copper pads and bridge lead length of
E25
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
SURGE OVERLOAD RATING TO 250 AMPS PEAK
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608
Data Sheet No. BRDB-600-2D
ABDB-600-2D
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248
U.S.A
18020 Hobart Blvd., Unit B
6 AMP SILICON BRIDGE RECTIFIERS
3.01 06db
E26
FIGURE 1. FORWARD CURRENT DERATING CURVE
Temperature, C
o
Resistive or Inductive Loads
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Instantaneous Forward Voltage (Volts)
0.01
0.1
1.0
10
100
NOTE 3
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE
Percent of Rated Peak Reverse Voltage
0.1
1.0
10
100
100
100
120
140
20
40
0
60
80
T = 25 C
J
o
T = 100 C
J
o
T = 125 C
J
o
Case, Tc
NOTE 1
60Hz
NOTES
(1) Case Temperature, T
With Bridge Mounted on 4"Sq. x 0.11" Thick
(10.5cm Sq. x 0.3cm) Aluminum Plate
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300 Sec; 1% Duty Cycle
C,
J
J
o
o
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
J
o
10
100
1000
NOTE 4
50 - 400V
600 - 1000V
1
10
0.1
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
100
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
1
10
100
250
200
225
275
150
175
125
100
75
50
25
NOTE 2