CMT18N20
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2001/11/01
Draft
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
FEATURES
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
! Silicon Gate for Fast Switching Speeds
!
Low R
DS(on)
to Minimize On-Losses. Specified at Elevated
Temperature
!
Rugged SOA is Power Dissipation Limited
!
Source-to-Drain Characterized for Use With Inductive
Loads
PIN CONFIGURATION
SYMBOL
TO-220
Front View
1
2
3
GAT
E
DRA
I
N
SOURCE
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
CMT18N20N220 TO-220
ABSOLUTE MAXIMUM RATINGS
Rating Symbol
Value
Unit
Drain to Current Continuous
Pulsed
I
D
I
DM
18
72
A
Gate-to-Source Voltage Continue
Non-repetitive
V
GS
V
GSM
20
40
V
V
Total Power Dissipation
Derate above 25
P
D
125
1.00
W
W/
Operating and Storage Temperature Range
T
J
, T
STG
-55
to
150
Single Pulse Drain-to-Source Avalanche Energy T
J
= 25
(V
DD
= 100V, V
GS
= 10V, I
L
= 18A, L = 1.38mH, R
G
= 25)
E
AS
224 mJ
Thermal Resistance Junction to Case
Junction to Ambient
JC
JA
1.00
62.5
/W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds
T
L
260
(1) Pulse Width and frequency is limited by TJ(max) and thermal response
CMT18N20
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2001/11/01
Draft
Champion Microelectronic Corporation
Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25.
CMT18N20
Characteristic Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250 A)
V
(BR)DSS
200
V
Drain-Source Leakage Current
(V
DS
= Rated V
DSS
, V
GS
= 0 V)
(V
DS
= 0.8Rated V
DSS
, V
GS
= 0 V, T
J
= 125)
I
DSS
0.025
1.0
mA
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
I
GSSF
100
nA
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
I
GSSR
100
nA
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 A)
V
GS(th)
2.0 4.0 V
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 10A) *
R
DS(on)
0.18
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 5.0 A)
V
DS(on)
6.0
V
Forward Transconductance (V
DS
= 50 V, I
D
= 10 A) *
g
FS
6.8
mhos
Input Capacitance
C
iss
1600
pF
Output Capacitance
C
oss
750
pF
Reverse Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
C
rss
300
pF
Turn-On Delay Time
t
d(on)
30
ns
Rise Time
t
r
60
ns
Turn-Off Delay Time
t
d(off)
80
ns
Fall Time
(V
DD
= 30 V, I
D
= 10 A,
V
GS
= 10 V,
R
G
= 4.7) *
t
f
60
ns
Total Gate Charge
Q
g
36
63
nC
Gate-Source Charge
Q
gs
16 nC
Gate-Drain Charge
(V
DS
= 0.8Rated V
DSS
, I
D
= Rated I
D
,
V
GS
= 10 V)*
Q
gd
26 nC
Internal Drain Inductance
(Measured from the drain lead 0.25" from package to center of die)
L
D
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25" from package to source bond pad)
L
S
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
V
SD
1.5
V
Forward Turn-On Time
t
on
** ns
Reverse Recovery Time
(I
S
= Rated I
D
,
d
IS
/d
t
= 100A/s)
t
rr
450
ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
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