Information furnished by HA MAM ATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1999 Hamamatsu Photonics K.K.
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GENERAL
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Parameter
Value
Description/Value
Unit
Spectral Response
400 to 1200
nm
Wavelength of Maximum Response
800
nm
Photocathode
MateriaI
AgOCs
Structure
Number of Stages
Minimum Effective Area
34
mm dia.
Window Material
Borosilicate glass
Dynode
Base
SuitabIe Socket
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
1500
Avarage Anode Current
Ambient Temperature
0.01
-30 to +50
250
Unit
Vdc
Vdc
mA
C
Circularcage
10
E67812A (supplied)
12pin base JEDEC No. B1243
CHARACTERISTlCS (at 25 )
Parameter
Max.
Typ.
Min.
Cathode Sensitivity
Anode Dark Current (at 4 A/lm)
Radiant at 800nm
Red/White Ratio
(Toshiba IRD80A filter)
A/W
A/lm
A/lm
%
Anode Pulse Rise Time
2.2
ns
nA
Electron Transit Time
25
2.4
0.14
0.08
5
480
Time Response
Electrodes
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
Ratio
2
1
1
1
1
1
1
1
1
1
1
Anode characteristics are measured with the voItage distribution ratio shown below.
SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode
NOTE:
Anode Sensitivity
Gain
37
7000
20000
Unit
mA/W
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
ns
2
1 0
5
Luminous (2856K)
Quantum Efficiency at 1.06 m
Luminous (2856K)
1
10
Radiant at 800nm
PHOTOMULTlPLlER TUBE
R1767
S-1 Spectral Response, High Infrared Sensitivity (QE0.08% at 1.06
m)
38mm(1-1/2 Inch) Diameter, 10-Stage, Head-On Type
PHOTOMULTlPLlER TUBE R1767
Figure 1: Typical Spectral Response
Figure 2: Dimensional Outline and Basing Diagram (Unit: mm)
BOTTOM VIEW
(BASING DIAGRAM)
Socket
(E678 12A)
TPMH1116E02
DEC. 1999
TPMHB0288EA
200
400
600
800
1000
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
0.01
0.1
1
10
100
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
TPMHA0228EA
12 PIN BASE
JEDEC
No. B12-43
FACEPLATE
38 1
34MIN.
PHOTO-
CATHODE
116MAX.
99 2
DY1
DY3
DY5
DY7
DY9
P
1
2
3
4
5
6
7
8
9
10
11
12
DY10
DY8
DY6
DY4
DY2
K
TACCA0009EB
40
47
5
8
15
17
37.3 0.5
2- 3.2
34
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
HOMEPAGE URL http://www.hamamatsu.com
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