2003-05-09
Page 1
SPD50N03S2L-06
Opti
MOS
Power-Transistor
Product Summary
V
DS
30
V
R
DS(on)
6.4
m
I
D
50
A
Feature
N-Channel
Enhancement mode
Logic Level
High Current Rating
Excellent Gate Charge x R
DS(on)
product (FOM)
Superior thermal resistance
175C operating temperature
Avalanche rated
dv/dt rated
P- TO252 -3-11
Marking
PN03L06
Type
Package
Ordering Code
SPD50N03S2L-06
P- TO252 -3-11 Q67042-S4084
Maximum Ratings, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
1)
T
C
=25C
I
D
50
50
A
Pulsed drain current
T
C
=25C
I
D puls
200
Avalanche energy, single pulse
I
D
=50 A ,
V
DD
=25V,
R
GS
=25
E
AS
250
mJ
Repetitive avalanche energy, limited by T
jmax
2)
E
AR
13
Reverse diode dv/dt
I
S
=50A,
V
DS
=24V,
di/dt=200A/s, T
jmax
=175C
dv/dt
6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
C
=25C
P
tot
136
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
C
IEC climatic category; DIN IEC 68-1
55/175/56
2003-05-09
Page 2
SPD50N03S2L-06
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
0.7
1.1
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
100
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
75
50
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
30
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 85 A
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=30V,
V
GS
=0V,
T
j
=25C
V
DS
=30V,
V
GS
=0V,
T
j
=125C
I
DSS
-
-
0.01
10
1
100
A
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=50A
R
DS(on)
-
6.8
9.2
m
Drain-source on-state resistance
V
GS
=10V, I
D
=50A
R
DS(on)
-
4.7
6.4
1Current limited by bondwire ; with an R
thJC
= 1.1K/W the chip is able to carry I
D
= 113A at 25C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2003-05-09
Page 3
SPD50N03S2L-06
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=50A
36
72
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f=1MHz
-
1900 2530 pF
Output capacitance
C
oss
-
740
990
Reverse transfer capacitance
C
rss
-
180
270
Turn-on delay time
t
d(on)
V
DD
=15V,
V
GS
=10V,
I
D
=50A,
R
G
=3.6
-
8
12
ns
Rise time
t
r
-
19
29
Turn-off delay time
t
d(off)
-
35
53
Fall time
t
f
-
24
36
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=24V, I
D
=50A
-
6
8
nC
Gate to drain charge
Q
gd
-
17.8
26.7
Gate charge total
Q
g
V
DD
=24V, I
D
=50A,
V
GS
=0 to 10V
-
52
68
Gate plateau voltage
V
(plateau) V
DD
=24V, I
D
=50A
-
3.2
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
50
A
Inv. diode direct current, pulsed
I
SM
-
-
200
Inverse diode forward voltage
V
SD
V
GS
=0V,
I
F
=50A
-
0.9
1.3
V
Reverse recovery time
t
rr
V
R
=15V,
I
F=
l
S
,
di
F
/dt=100A/s
-
41
51
ns
Reverse recovery charge
Q
rr
-
46
58
nC
2003-05-09
Page 5
SPD50N03S2L-06
5 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25C
parameter: t
p
= 80 s
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
10
20
30
40
50
60
70
80
90
100
A
120
SPD50N03S2L-06
I
D
VGS [V]
a
a
2.6
b
b
2.8
c
c
3.0
d
d
3.2
e
e
3.4
f
f
3.6
g
g
3.8
h
h
4.5
i
P
tot
= 136W
i
10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter:
V
GS
=10V
0
10
20
30
40
50
60
70
A
85
I
D
0
2
4
6
8
10
12
14
16
18
21
SPD50N03S2L-06
R
DS(on)
V
GS
[V] =
d
d
3.2
e
e
3.4
f
f
3.6
g
g
3.8
h
h
4.5
i
i
10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 s
0
0.5
1
1.5
2
2.5
3
V
4
V
GS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25C
parameter:
g
fs
0
20
40
60
80
100
A
130
I
D
0
10
20
30
40
50
60
70
S
90
g
fs
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