Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 2
1
Publication Order Number:
BC447/D
BC447, BC449, BC449A
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC447
BC449, BC449A
V
CEO
80
100
Vdc
Collector-Base Voltage
BC447
BC449, BC449A
V
CBO
80
100
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current - Continuous
I
C
300
mAdc
Total Device Dissipation
@ T
A
= 25
C
Derate above 25
C
P
D
625
5.0
mW
mW/
C
Total Device Dissipation
@ T
C
= 25
C
Derate above 25
C
P
D
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-55 to
+150
C
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
MSL: 1
NA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient
R
JA
200
C/W
Thermal Resistance,
Junction-to-Case
R
JC
83.3
C/W
Device
Package
Shipping
ORDERING INFORMATION
BC447
TO-92
http://onsemi.com
CASE 29
TO-92
STYLE 17
5000 Units/Box
3
2
1
BC449
TO-92
5000 Units/Box
COLLECTOR
1
2
BASE
3
EMITTER
BC449A
TO-92
5000 Units/Box
MARKING DIAGRAM
BC
44xx
YWW
BC44xx = Specific Device Code
xx
= 7, 9 or 9A
Y
= Year
WW
= Work Week
BC447, BC449, BC449A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
BC447
BC449, BC449A
V
(BR)CEO
80
100
-
-
-
-
Vdc
Collector - Base Breakdown Voltage
(I
C
= 100
Adc, I
E
= 0)
BC447
BC449, BC449A
V
(BR)CBO
80
100
-
-
-
-
Vdc
Emitter - Base Breakdown Voltage
(I
E
= 10
Adc, I
C
= 0)
V
(BR)EBO
5.0
-
-
Vdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
BC447
(V
CB
= 80 Vdc, I
E
= 0)
BC449, BC449A
I
CBO
-
-
-
-
100
100
nAdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
BC447, BC449
BC449A
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
BC447, BC449
BC449A
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
BC447, BC449
BC449A
h
FE
50
120
50
100
50
60
-
-
-
-
-
-
460
220
-
-
-
-
-
Collector - Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
-
0.125
0.25
Vdc
Base - Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
BE(sat)
-
0.85
-
Vdc
Base - Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc) (Note 1)
V
BE(on)
0.55
-
-
0.76
0.7
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current - Gain - Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100
200
-
MHz
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle 2%
BC447, BC449, BC449A
http://onsemi.com
3
Figure 1. Current-Gain -- Bandwidth Product
Figure 2. Capacitance
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (mA)
-100
-10
200
100
70
50
30
V
R
, REVERSE VOLTAGE (VOLTS)
-1.0
-100
-0.1
-2.0
f T
, CURRENT-GAIN - BANDWIDTH PRODUCT
(MHz)
C, CAP
ACIT
ANCE (pF)
-2.0 -3.0
-5.0 -7.0
-20 -30
-50 -70
300
-0.2
-0.5
-5.0
-10 -20
-50
T
J
= 25
C
I
C
, COLLECTOR CURRENT (mA)
-10
500
200
100
50
20
10
-100
t, TIME
(ns)
-50
-200
1.0 k
300
700
70
30
-70
-20
-30
T
J
= 25
C
V
CE
= -1.0 V
-5.0 V
-1.0
40
20
10
6.0
T
J
= 25
C
4.0
2.0
C
ibo
C
obo
V
CC
= -40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25
C
t
s
t
f
t
r
t
d
@ V
BE(off)
= -0.5 V
8.0
Figure 4. Active-Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-10
-50
-1.0
-500
-200
-100
-50
-20
-10
-20
-2.0
-5.0
-1.0 k
I C
, COLLECT
OR CURRENT
(mA)
MPS8598
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8599
-3.0
-7.0
-30
-100
-70
-30
-70
-300
-700
DUTY CYCLE
10%
Figure 5. DC Current Gain
Figure 6. "ON" Voltages
V
,
VOL
T
AGE (VOL
TS)
I
C
, COLLECTOR CURRENT (mA)
, DC CURRENT
GAIN
h
FE
I
C
, COLLECTOR CURRENT (mA)
-2.0
-0.2
300
200
100
70
50
30
-10
T
J
= 125
C
-1.0
-5.0
V
CE
= -5.0 V
-20
-100
-50
-200
25
C
-55
C
-0.5
10
200
1.0
1.0
0.8
0.6
0.4
0.2
0
100
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
0.2
2.0
20
50
0.5
5.0
BC447, BC449, BC449A
http://onsemi.com
4
Figure 7. Collector Saturation Region
Figure 8. Base-Emitter Temperature
Coefficient
I
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (mA)
R
VB
,
TEMPERA
TURE COEFFICIENT
(mV/ C)
q
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
V
CE
100
0.2
10
1.0
2.0
5.0
20
50
200
0.1
10
0.05
2.0
1.6
1.2
0.8
0.4
0
1.0
T
J
= 25
C
I
C
=
100 mA
I
C
=
50 mA
I
C
=
200 mA
I
C
=
20 mA
I
C
=
10 mA
20
2.0
5.0
0.2
0.5
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
R
qVB
FOR V
BE
-55
C TO 125
C
0.5
0.02
Figure 9. Thermal Response
t, TIME (ms)
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k 100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r(t), NORMALIZED
TRANSIENT
THERMAL
RESIST
ANCE
Z
JC
(t) = r(t)
R
JC
T
J(pk)
- T
C
= P
(pk)
Z
JC
(t)
Z
JA
(t) = r(t)
R
JA
T
J(pk)
- T
A
= P
(pk)
Z
JA
(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
(SEE AN469)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
P
(pk)
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
SINGLE PULSE
0.05
BC447, BC449, BC449A
http://onsemi.com
5
PACKAGE DIMENSIONS
TO-92
(TO-226)
CASE 29-11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X-X
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
BC447, BC449, BC449A
http://onsemi.com
6
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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BC447/D
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