Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised October 4, 2002
Page 1
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
ADVANCED INFORMATION
RMDA29000
27-31 GHz Driver Amplifier MMIC
# 425430398
Description
22 dB small signal gain (typ.)
23 dBm saturated power out (typ.)
Circuit contains individual source vias
Chip Size 3.41 mm x 1.62 mm
Features
The Raytheon RF Components RMDA29000 is a high efficiency driver amplifier designed for use in
point to point radio, point to multi-point communications, LMDS and other millimeter wave applications.
The RMDA29000 is a 3-stage GaAs MMIC amplifier utilizing Raytheon RF Components' advanced
0.15mm gate length Power PHEMT process and can be used in conjunction with other driver or power
amplifiers to achieve the required total power output.
Electrical
Characteristics
(At 25 C) 50 Ohm
system, Vd=+5 V,
Quiescent current
(Idq)=250 mA
Parameter
Min
Typ Max Unit
Frequency Range
27
31
GHz
Gate Voltage
1
(Vg)
-0.4
V
Gain Small Signal
18
22
28
dB
Gain Variation
vs. Frequency
+/-1
dB
Power Output at 1 dB
Compression 21
dBm
Power Output Saturated:
(Pin=+4 dBm)
21
23
dBm
Note:
Typical range of the negative gate voltages is -0.9 to 0.0 V to set typical Idq of 250 mA.
10 MHz tone separation measured at 10 dBm Power Out/tone.
Absolute
Ratings
Parameter
Symbol Value Unit
Positive DC Voltage (+5 V Typical) Vd
+ 6 Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8 Volts
Positive DC Current
I
D
360
mA
RF Input Power (from 50
source) P
IN
+10
dBm
Operating Base plate Temperature T
C
-30 to +85 C
Storage Temperature Range
T
stg
-55 to +125 C
Thermal Resistance
R
jc
38
C/W
(Channel to Backside)
Parameter
Min
Typ Max Unit
Drain Current Small Signal
250
mA
Drain Current at P1
dB Compression
270
mA
Power Added Efficiency
(PAE): at P1dB
8
%
OIP3
2
30
dBm
Input Return Loss
5
10
dB
Output Return Loss
5
8
dB
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised October 4, 2002
Page 2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
ADVANCED INFORMATION
RMDA29000
27-31 GHz Driver Amplifier MMIC
# 425430398
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion
and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier
should be machined, finished flat, plated with gold over nickel and should be capable of withstanding
325C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should
avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and
is used as RF and DC Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent
contamination of bonding surfaces. These are ESD sensitive devices and should be handled with
appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond
equipment must be well grounded to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as
practical allowing for appropriate stress relief. The RF input and output bonds should be typically
0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
RF IN
RF OUT
Gate
Supply Vg
Drain
Supply Vd
Ground
(Back of Chip)
MMIC Chip
Figure 2
Chip Layout and
Bond Pad Locations
(Chip Size=3.405
mm x 1.621 mm x 50
mm. Back of Chip is
RF and DC Ground)
Dimensions in mm
0.704
1.105
0.898
0.0
0.642
0.0
2.375
3.236
3.405
1.
514
1.621
0.427
2.157
3.242
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised October 4, 2002
Page 3
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
ADVANCED INFORMATION
RMDA29000
27-31 GHz Driver Amplifier MMIC
# 425430398
Figure 3
Recommended
Application
Schematic Circuit
Diagram
RF IN
RF OUT
Gate Supply
Vg
Drain Supply
(Vd=+5V)
Ground
(Back of Chip)
MMIC Chip
100pF
10000pF
L
L
Bond Wire Ls
Bond Wire Ls
10000pF
100pF
L
L
Vd
(Positive)
100pF
100pF
10000pF
10000pF
Vg
(Negative)
RF
Input
RF
Output
Alumina
50-Ohm
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
Note:
Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Vd should biased from 1 positive supply. Vg should be biased from 1 negative supply.
Figure 4
Recommended
Assembly Diagram
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised October 4, 2002
Page 4
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
ADVANCED INFORMATION
RMDA29000
27-31 GHz Driver Amplifier MMIC
# 425430398
Note:
An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for
the above procedure is shown below.
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the
ground of the chip carrier.
Slowly apply negative gate bias supply
voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply
voltage of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the
quiescent current of Idq=250 mA.
Step 5: After the bias condition is established, the
RF input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage
(Vg).
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY
DAMAGE THE AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier.
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised October 4, 2002
Page 5
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
ADVANCED INFORMATION
RMDA29000
27-31 GHz Driver Amplifier MMIC
# 425430398
Performance
Data
RMDA29000 S21 Vs. Frequency
Bias Vd=5V, Id=250mA, T=25C
RM DA29000 S-Parameters Vs. Frequency
5V, 250mA, T =25
o
C
-2 0
-1 5
-1 0
-5
0
5
1 0
1 5
2 0
2 5
3 0
2 4
2 5
2 6
2 7
2 8
2 9
3 0
3 1
3 2
3 3
3 4
Frequency (GHz)
Si
j
(
d
B
)
S11
S22
S21
RMDA29000 S21 Vs. Frequency
Over Temperature 5V, 250mA
0
5
10
15
20
25
30
35
26
27
28
29
30
31
32
Frequency (GHz)
S2
1 (
d
B
)
+25C
+85C
-35C
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised October 4, 2002
Page 6
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
ADVANCED INFORMATION
RMDA29000
27-31 GHz Driver Amplifier MMIC
# 425430398
Performance
Data
RMDA29000 Gain Vs. Pout
5V 250mA T=25
o
C
13
15
17
19
21
23
25
27
29
0
5
10
15
20
25
30
Pout (dBm)
G
a
in
(
d
B
)
27 GHz
28 GHz
29 GHz
30 GHz
31 GHz
RMDA29000 OIP3 Vs. Pout/Tone 10 MHz Tone Sep
5V 250mA T=25C
15
20
25
30
35
40
0
5
10
15
20
25
Pout/Tone (dBm)
OI
P
3
L
(
d
B
m
)
27 GHz
28 GHz
29 GHz
30 GHz
31 GHz
Typ
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