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TARGET DATA
January, 24 2003
LET20030C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
Designed for GSM / EDGE / IS-97 applications
IS-97 CDMA PERFORMANCES
P
OUT
=
4.5 W
EFF. = 17 %
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 30 W with 11 dB gain @ 2000 MHz
ESD PROTECTION
DESCRIPTION
The LET20030C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.0 GHz.
The LET20030C is designed for high gain and
broadband performance operating in common
source mode at 26 V. It is ideal for base station
applications requiring high linearity.
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M
)
65
V
V
GS
Gate-Source Voltage
-0.5 to +15
V
I
D
Drain Current
4
A
P
DISS
Power Dissipation (@ Tc = 70
C)
65
W
Tj
Max. Operating Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +200
C
THERMAL DATA (T
CASE
= 70
C)
R
th(j-c)
Junction -Case Thermal Resistance
2.0
C/W
M243
epoxy sealed
ORDER CODE
LET20030C
BRANDING
LET20030C
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
LET20030C
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ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC
ESD PROTECTION CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V
I
DS
= 1 mA
65
V
I
DSS
V
GS
= 0 V
V
DS
= 26 V
1
A
I
GSS
V
GS
= 5 V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 26 V
I
D
= TBD
2.5
5.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 1 A
TBD
V
G
FS
V
DS
= 10 V
I
D
= 1 A
TBD
mho
C
ISS
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
C
OSS
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
C
RSS
V
GS
= 0 V
V
DS
= 26 V
f = 1 MHz
TBD
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC (
f = 2000 MHz
)
P
1dB
V
DD
= 26 V I
DQ
= 200 mA
30
W
G
P
V
DD
= 26 V
I
DQ
= 200 mA
P
OUT
= 30 W
11
dB
D
V
DD
= 26 V
I
DQ
= 200 mA P
OUT
= 30 W
52
%
IMD3
(1)
V
DD
= 26 V
I
DQ
= 200 mA
P
OUT
= 30 W PEP
-31
-28
dBc
Load
mismatch
V
DD
= 26 V I
DQ
= 200 mA
P
OUT
= 30 W
ALL PHASE ANGLES
10:1
VSWR
DYNAMIC (
f = 1930 - 1990 MHz
)
P
OUT
(2)
V
DD
= 26 V I
DQ
= TBD
25
30
W
G
P
V
DD
= 26 V I
DQ
= TBD P
OUT
= 30 W
11
dB
D
(2)
V
DD
= 26 V I
DQ
= TBD
40
45
%
P
out(CDMA)
(3)
885 KHz < -47 dBc
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
4.5
W
D(CDMA)
(3)
885 KHz < -47 dBc
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
17
%
Test Conditions
Class
Human Body Model
2
Machine Model
M3
(1) f
1
= 2000 MHz, f
2
= 2000.1 MHz
(3) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
(2) 1 dB Compression point
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LET20030C
TYPICAL PERFORMANCE
Power Gain vs. Output
Power
0
2
4
6
8
10
12
14
16
0
10
20
30
40
Pout (W )
Gp
(d
B
)
f = 2 GHz
Vcc = 26 V
Idq = 200 m A
Efficiency
vs.
Output Power
0
10
20
30
40
50
60
0
10
20
30
40
Pout (W )
Nd (
%
)
f = 2 GHz
Vcc = 26 V
Idq = 200 m A
IMD3
vs.
Output Power
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
15
20
25
30
35
40
Pout (W PEP)
IM
D
3
(
d
B
c
)
Vc c = 26 V
Idq = 200 m A
LET20030C
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Controlling dimension: Inches
1022142E
M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
5.21
5.72
0.205
0.225
B
5.46
6.48
0.215
0.255
C
5.59
6.10
0.220
0.240
D
14.27
0.562
E
20.07
20.57
0.790
0.810
F
8.89
9.40
0.350
0.370
G
0.10
0.15
0.004
0.006
H
3.18
4.45
0.125
0.175
I
1.83
2.24
0.072
0.088
J
1.27
1.78
0.050
0.070
DIM.
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LET20030C
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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