1/8
October 2002
.
STD40NF06LZ
N-CHANNEL 60V - 0.020
- 40A DPAK
Zener-Protected STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.020
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE
s
LOGIC LEVEL GATE DRIVE
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s
BUILT-IN ZENER DIODES TO IMPROVE ESD
PROTECTION UP TO 2kV
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITOTS,
COMPUTER AND INDUSTRIAL
APPLICATION
s
WELDING EQUIPMENT
s
AUTOMOTIVE
TYPE
V
DSS
R
DS(on)
I
D
STD40NF06LZ
60 V
< 25 m
40 A
1
3
DPAK
TO-252
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(1)
I
SD
40A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
.
(2)
Starting T
j
= 25
o
C I
D
= 20A
V
DD
= 45V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
40
A
I
D
Drain Current (continuous) at T
C
= 100C
28
A
I
DM
(
)
Drain Current (pulsed)
160
A
P
tot
Total Dissipation at T
C
= 25C
100
W
Derating Factor
0.67
W/C
V
ESD(G-S)
Gate-source ESD(HBM-C=100pF, R=15k
)
2.5
kV
dv/dt
(1)
Peak Diode Recovery voltage slope
9
V/ns
E
AS(2)
Single Pulse Avalanche Energy
450
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STD40NF06LZ
2/8
THERMAL DATA
(#)
When Mounted on 1 inch
2
FR-4 board, 2 oz Cu.
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-
PCB
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-PCB (#)
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.5
50
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16 V
10
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V
I
D
= 20 A
V
GS
= 10 V
D
= 20 A
0.030
0.025
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 20 A
25
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1360
302
115
pF
pF
pF
3/8
STD40NF06LZ
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 20 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
17
75
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=48 V I
D
=40 A V
GS
=10V
54
11
12
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30V
I
D
= 20 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
38
23
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
40
160
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 40A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A
di/dt = 100A/s
V
DD
= 30 V
T
j
= 150C
(see test circuit, Figure 5)
66
142
4.3
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STD40NF06LZ
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STD40NF06LZ
.
.
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
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