1/11
June 2003
STGP3NB60M - STGD3NB60M
N-CHANNEL 3A - 600V TO-220 / DPAK
PowerMESHTM IGBT
s
HIGH INPUT IMPEDANCE
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
OFF LOSSES INCLUDE TAIL CURRENT
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
HIGH FREQUENCY OPERATION
s
CO-PACKAGED WITH TURBOSWITCHTM
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding perfomances.
The suffix "M" identifies a family optimized to
achieve very low switching switching times for high
frequency applications (<20KHZ)
APPLICATIONS
s
MOTOR CONTROLS
s
SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
TYPE
V
CES
V
CE(sat) (Max)
@25C
I
C
@100C
STGP3NB60M
STGD3NB60M
600 V
600 V
< 1.9
V
< 1.9
V
3 A
3 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGP3NB60M
GP3NB60M
TO-220
TUBE
STGD3NB60MT4
GD3NB60M
DPAK
TAPE & REEL
TO-220
1
2
3
1
3
DPAK
INTERNAL SCHEMATIC DIAGRAM
STGP3NB60M - STGD3NB60M
2/11
ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
Symbol
Parameter
Value
Unit
TO-220
DPAK
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
C
= 25C
6
A
I
C
Collector Current (continuous) at T
C
= 100C
3
A
I
CM
( )
Collector Current (pulsed)
24
A
P
TOT
Total Dissipation at T
C
= 25C
68
60
W
Derating Factor
0.55
0.47
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220
DPAK
Rthj-case
Thermal Resistance Junction-case Max
1.8
2.1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
100
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
50
A
V
CE
= Max Rating, T
C
= 125 C
100
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
3
5
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 3 A
1.5
1.9
V
V
GE
= 15V, I
C
= 3 A, Tj =125C
1.2
V
3/11
STGP3NB60M - STGD3NB60M
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
CE
= 15 V, Ic = 3 A
5
S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
240
pF
C
oes
Output Capacitance
33
pF
C
res
Reverse Transfer
Capacitance
6
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 3 A,
V
GE
= 15V
15
2.2
8
20
nC
nC
nC
I
CL
Latching Current
V
clamp
= 480 V, V
GE
= 15V
Tj = 125C , R
G
= 10
20
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
CC
= 480 V, I
C
= 3A, R
G
= 10
, V
GE
= 15 V
10
4
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 3 A R
G
=10
V
GE
= 15 V,Tj =125C
570
30
A/s
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 3 A,
R
G
= 10
, V
GE
= 15 V
330
ns
t
r
(V
off
)
Off Voltage Rise Time
85
ns
t
d
(
off
)
Delay Time
120
ns
t
f
Fall Time
240
ns
E
off
(**)
Turn-off Switching Loss
175
J
E
ts
Total Switching Loss
205
J
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 3 A,
R
G
= 10
, V
GE
= 15 V
Tj = 125 C
810
ns
t
r
(V
off
)
Off Voltage Rise Time
270
ns
t
d
(
off
)
Delay Time
344
ns
t
f
Fall Time
515
ns
E
off
(**)
Turn-off Switching Loss
458
J
E
ts
Total Switching Loss
488
J
STGP3NB60M - STGD3NB60M
4/11
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Normalized Collector-Emitter On Voltage vs Temp.
Transconductance
Transfer Characteristics
Output Characteristics
5/11
STGP3NB60M - STGD3NB60M
Total Switching Losses vs Temperature
Total Switching Losses vs Gate Resistance
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
Gate Threshold vs Temperature
STGP3NB60M - STGD3NB60M
6/11
Turn-Off SOA
Thermal Impedance for DPAK
Thermal Impedance for TO-220
Total Switching Losses vs Collector Current
7/11
STGP3NB60M - STGD3NB60M
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 1: Gate Charge test Circuit
STGP3NB60M - STGD3NB60M
8/11
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
9/11
STGP3NB60M - STGD3NB60M
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
STGP3NB60M - STGD3NB60M
10/11
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
16.4
18.4
0.645
0.724
N
50
1.968
T
22.4
0.881
BASE QTY
BULK QTY
2500
2500
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
6.8
7
0.267
0.275
B0
10.4
10.6
0.409
0.417
B1
12.1
0.476
D
1.5
1.6
0.059
0.063
D1
1.5
0.059
E
1.65
1.85
0.065
0.073
F
7.4
7.6
0.291
0.299
K0
2.55
2.75
0.100
0.108
P0
3.9
4.1
0.153
0.161
P1
7.9
8.1
0.311
0.319
P2
1.9
2.1
0.075
0.082
R
40
1.574
W
15.7
16.3
0.618
0.641
TAPE MECHANICAL DATA
All dimensions
are in millimeters
All dimensions are in millimeters
11/11
STGP3NB60M - STGD3NB60M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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