TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
CATV Ultra-Linear Power Amp
TGA2801D-EPU-SG
Key Features and Performance
High Power Compression
(P1dB 31.5 dBm typ.)
Low Cost Surface Mount Package
Flat Gain
Ultra-Low Distortion (55dBm IP3 typ.)
Wide Bandwidth (40MHz - 1GHz)
Low DC Power Consumption
Single Supply Bias (+12V)
Unconditionally Stable
Proven GaAs Technology
Description
The TriQuint TGA2801D-EPU is an ultra-linear,
packaged power amplifier which operates from 40MHz
to 1000MHz. The amplifier is available in a standard 16
lead SOIC package. The amplifier provides a flat gain
along with ultra-low distortion. It also provides a high
output power with a low DC power consumption. This
amplifier is ideally suited for use in CATV distribution
systems or other applications requiring high output
powers and extremely low distortion. Demonstration
Boards are available.
March 6, 2003
Bottom View
Top View
TGA2801D Compression
13.5 dB Tilt to 870 MHz: 110 Ch, no QAM, 550mA
-90
-80
-70
-60
-50
-40
46
48
50
52
54
56
58
60
62
64
Equiv Output @ 870 MHz, (dBmV/ch)
D
i
s
t
orti
on (dB
c
)
XMOD
CTB
TGA2801D Compression
13.5 dB Tilt to 870 MHz: 79 Ch, QAM to 870 MHz
with 6 dB offset, 550mA
-90
-80
-70
-60
-50
-40
46
48
50
52
54
56
58
60
62
64
Equiv Output @ 870 MHz, (dBmV/ch)
Distor
tion (dBc)
XMOD
CTB
Gain in a Typical Circuit
w/External Balun Effects Removed
9
10
11
12
13
14
0
200
400
600
800
1000
Frequency (MHz)
S21 (d
B)
Primary Applications
HFC Nodes
CATV Line Amplifiers
Head End Equipment
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2801D-EPU-SG
DC Specifications
Symbol
Parameter
Typ
Unit
V
DD
Bias Supply Voltage
12
V
I
DD
Bias Supply Current
485
mA
V
G1
Gate 1 Voltage (Pin 7)
0.68
V
V
G2
Gate 2 Voltage (Pin 2)
4.15
V
V
out1
RF Output 1 Voltage (Pin 14)
V
DD
V
V
out2
RF Output 2 Voltage (Pin 11)
V
DD
V
Maximum Ratings 1/
Symbol
Parameter
Min
Max
Units
Notes
V
DD
Bias Supply Voltage
0
15
V
I
DD
Bias Supply Current
615
mA
2/
P
IN
RF Input Power
70
dBmV
T
ASSY
Assembly Temperature (30 seconds max)
300
C
T
STG
Storage Temperature
-65
150
C
T
CASE
Package Operating Temperature (Heat Slug)
-40
100
C
1/
These values reflect maximum operable values for this device. Operating above the
recommended values may directly affect MTTF.
2/
Total Current
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
RF Specifications
T
A
=25
C, V
DD
=12V
Symbol
Parameter
Min
Typ
Max
Units
BW
Bandwidth
40
870
MHz
S
21
Gain 1/
12.0
dB
GF
Gain Flatness 1/
0.3
dB
NF
Noise Figure
2.75
dB
P
1dB
1dB Gain Compression @ 1GHz
31.5
dBm
IP
3
Two-Tone, Third-Order Intercept (625 &
700MHz)
55
dBm
CTB
Composite Triple Beat Distortion 2/
-80
dBc
CSO
Composite Second Order Distortion 2/
-72
dBc
XMOD
Cross Modulation 2/
-73
dBc
IRL
Input Return Loss 1/ 3/
22
dB
ORL
Output Return Loss 1/ 3/
22
dB
I
D
Drain Current 4/
485
550
mA
1/
Measured performance of chip alone. Balun effects have been removed.
2/
112-Channel flat, +44dBmV/channel output
3/
Using application circuit on last page
4/
Increasing drain current will improve linearity of device
TGA2801D-EPU-SG
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Measured S-Parameters
Using Application Circuit
(includes effects of external baluns)
TGA2801D-EPU-SG
-25
-20
-15
-10
-5
0
0
200
400
600
800
1000
Frequency (MHz)
S
12 (dB
)
9
10
11
12
13
14
0
200
400
600
800
1000
Frequency (MHz)
S
21 (dB
)
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Measured S-Parameters
Using Application Circuit
(includes effects of external baluns)
TGA2801D-EPU-SG
-50
-40
-30
-20
-10
0
0
200
400
600
800
1000
Frequency (MHz)
S
11 (dB
)
-50
-40
-30
-20
-10
0
0
200
400
600
800
1000
Frequency (MHz)
S
22 (dB
)
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA2801D-EPU-SG
Typical Measured Performance
Using Application Circuit
(includes effects of external baluns)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
100
200
300
400
500
600
700 800
900 1000
Frequency (MHz)
NF (dB)
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
LC
I
P
A
-
20
0
1
1
16
15
14
13
11
10
9
8
7
6
5
4
3
2
12
0.296
0.406
HEAT
SLUG
0.234
0.184
0.087
0.056
0.050
0.016
0.407
0.002
0.094
Mechanical Specifications
T
G
A
2
801D-
E
P
U
TGA2801D-EPU-SG
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
LC
I
P
A
-
2001
1
16
15
14
13
11
10
9
8
7
6
5
4
3
2
12
0.296
0.406
TGA
2801D
-
E
P
U
Pinout
Pin Description
Pin
Description
1
GND
2
Gate 2: Open Circuit
on PC Board
3
RF Input 1
4
GND
5
GND
6
RF Input 2
7
Gate 1: Current Adjust
R
1
= open circuit
8
GND
9
GND
10
V
DD
11
RF Output 2
12
GND
13
GND
14
RF Output 1
15
V
DD
16
GND
TGA2801D-EPU-SG
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Component Description
Ref
Description
C1
0.01
mF Capacitor
C2
0.01
mF Capacitor
C3
300pF Capacitor
C4
300pF Capacitor
C5
1.0pF Capacitor
C6
1.0pF Capacitor
C7
1.0pF Capacitor
C8
1.0pF Capacitor
L1
390nH Inductor
L2
390nH Inductor
R1
Current Adjust 2/
R
1
= open circuit
T1
Balun 1/
T2
Balun 1/
1/
Balun performance impacts amplifier return losses and gain. Best performance can be
achieved by winding 34 or 36 gauge bifilar wire around a small binocular core made
from low-loss magnetic material. Suitable wire may be obtained from MWS Wire
Industries. Core vendors include Ferronics, Fairrite, TDK, and Micrometals.
Alternatively, off-the-shelf baluns can be purchased from a number of vendors
including Mini-Circuits (ADTL1-18-75), M/A-COM (ETC1-1-13), and Pulse Engineering
(CX2071).
2/
Current can be adjusted by either changing the resistor value or forcing a voltage on
pin 7.
TGA2801D-EPU-SG
Recommended Assembly
RF In
N/C
LC
I
P
A
-
2001
1
16
15
14
13
11
10
9
8
7
6
5
4
3
2
12
+12 VDC
+12 VDC
RF Out
T 1
R1
L2
L1
C4
C3
C2
C1
T2
C6
C5
C8
C7
TGA2
801
D
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