TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
17 - 27 GHz High Power Amplifier TGA4502-EPU
Key Features
0.25 um pHEMT Technology
22 dB Nominal Gain
29 dBm Nominal P1dB
37dBm Nominal OTOI
15 dB Nominal Return Loss
Bias 7V @ 750 mA
Chip Dimensions 1.5 x 3.3 x .1mm
Primary Applications
K Band Sat-Com
Point-to-Point Radio
Point-to-Multipoint Communications
Preliminary Measured Performance
Bias Conditions: Vd = 7V, Id = 750mA
Chip Dimensions 1.5 mm x 3.3 mm x .1mm
0
5
10
15
20
25
30
14
16
18
20
22
24
26
28
30
32
Frequency (GHz)
G
a
in
(
d
B
)
25
27
29
31
33
35
17 18 19 20 21 22 23 24 25 26 27
Frequency (GHz)
P
1
d
B
&
P
s
a
t
(
d
Bm
)
P1dB
Psat
-30
-25
-20
-15
-10
-5
0
14
16
18
20
22
24
26
28
30
32
Frequency (GHz)
I
nput
R
e
t
u
r
n
Loss
(
d
B
)
-50
-40
-30
-20
-10
0
14
16
18
20
22
24
26
28
30
32
Frequency (GHz)
O
u
tp
u
t
R
e
tu
r
n
L
o
s
s
(d
B
)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA4502-EPU
TABLE I
MAXIMUM RATINGS
5/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
8 V
4/
V
-
Negative Supply Voltage Range
-5V TO 0V
I
+
Positive Supply Current
880 mA
4/
| I
G
|
Gate Supply Current
28 mA
P
IN
Input Continuous Wave Power
26 dBm
P
D
Power Dissipation
TBD
3/ 4/
T
CH
Operating Channel Temperature
150
0
C
1/ 2/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings apply to each individual FET.
2/
Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
3/
When operated at this power dissipation with a base plate temperature of 70
0
C, the median
life is reduced from TBD to TBD hours.
4/
Current is defined under no RF drive conditions. Under RF drive, the supply current may
rise to 1100 mA without damage. Combinations of supply voltage, supply current, input
power, and output power shall not exceed P
D
.
5/
These ratings represent the maximum operable values for this device.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TABLE II
DC PROBE TEST
(TA = 25
C
5
C)
SYMBOL PARAMETER
MINIMUM
MAXIMUM
UNIT
I
DSS1
Saturated Drain Current
60
282
mA
G
m
Transconductance
132
318
mS
V
P1,2
Pinch-off Voltage
-1.5
-0.5
V
V
P3-6
Pinch-off Voltage
-1.5
-0.5
V
V
P6-10
Pinch-off Voltage
-1.5
-0.5
V
V
BVGS1
Breakdown Voltage Gate-Source
-30
-13
V
TGA4502-EPU
TABLE III
RF CHARACTERISTICS
(T
A
= 25
C
5
C)
Vd = 7V, I = 750 mA
SYMBOL
PARAMETER
TEST
CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 17 18 GHz
F = 20 24 GHz
F = 27 GHz
22
23
20
dB
IRL
Input Return Loss
F = 17 27 GHz
-20
dB
ORL
Output Return Loss
F = 17 27 GHz
-15
dB
P
1dB
Output Power @ 1dB
Gain Compression
F = 17 27 GHz
30
dBm
OTOI
Output Third Order
Intercept
F = 18 27 GHz
37
dBm
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA4502-EPU
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 750mA
34
35
36
37
38
39
40
18
20
22
24
26
Frequency (GHz)
OTO
I
(dB
m
)
0
10
20
30
40
50
60
70
10
12
14
16
18
20
22
24
26
Pout/Tone (dBm)
IM
D3 & IM
D5 (dB
c
)
IMD5 @ 22GHz
IMD3 @ 22GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA4502-EPU
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 750mA
At Frequency: 18GHz
0
5
10
15
20
25
30
-15
-10
-5
0
5
10
Pin (dBm)
Pout/to
n
e (dBm
)
-70
-55
-40
-25
-10
5
20
IM
D
3
& IM
D
5
(dBm)
Single Tone Power
IMD3
IMD5
At Frequency: 20GHz
0
5
10
15
20
25
30
-15
-10
-5
0
5
10
Pin (dBm)
Pout/to
n
e (dBm
)
-70
-55
-40
-25
-10
5
20
IM
D
3
& IM
D
5
(dBm)
Single Tone Power
IMD3
IMD5
At Frequency: 24GHz
0
5
10
15
20
25
30
-15
-10
-5
0
5
10
Pin (dBm)
Pout/to
n
e (dBm
)
-
70
-55
-40
-25
-10
5
20
IM
D
3
& IM
D
5
(dBm)
Single Tone Power
IMD3
IMD5
At Frequency: 26GHz
0
5
10
15
20
25
30
-15
-10
-5
0
5
10
Pin (dBm)
Pout/to
n
e (dBm
)
-70
-55
-40
-25
-10
5
20
IM
D
3
& IM
D
5
(dBm
)
Single Tone Power
IMD3
IMD5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Notes:
1. Connection to power det, ref
diode not shown.
2. 0.1
F cap on gate, drain lines
not shown but required.
3. For high power operation,
gate voltage is recommended
from both sides.
4. Drain voltage is required
from both sides for Id > 780mA.
Output
TFN
100pF
100pF
Vg
Input
TFN
100pF
Vd
Vd
100pF
Vg (one side optional)
0.01
F
DQ cap
(opt.)
TGA4502-EPU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Assembly Diagram
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA4502 built-in power detector
On-chip diode functions as envelope detector
External coupler and DC bias required
External coupler
(-20dB)
TGA4502
50
C=2pF
Video out
(V
det
)
10K
External
DC bias
RF
OUT
RF
OUT
V
bias
100pF
100pF
TGA4502 with external test coupler
(amplifier bias connections not shown)
V
det
RF
IN
RF
OUT
TGA4502-EPU
TGA4502 measured detector voltage offset vs output power
with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is
uncalibrated, 10K
load
0.01
0.1
1
10
8
10
12
14
16
18
20
22
24
26
28
30
32
Pout (dBm)
D
e
t
ect
or
v
o
l
t
a
g
e (
V
)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing
1.89
8
(
1
80
x1
00
m)
TGA4502-EPU
1.89
8
(
18
0x1
00
m)
0.000
0.686
0.00
0
0.61
2
0.87
5
0.833
(
175x100
m)
0.22
0
3.13
6
0.098
2.95
2
0.373
1.480
3.28
6
0.61
2
0.87
5
0.09
5
3.13
6
1.26
2
1.26
2
1
8
3
4
5
6
7
2
9
10
11
12
13
14
15
Bond pad #1
(RF Input)
200 x 100
m
Bond pad #2
(RF Output)
200 x 100
m
Bond pad #3
VG2
105 x 105
m
Bond pad #4
DQ
105 x 105
m
Bond pad #5
VG3
105 x 105
m
Bond pad #6
VD3
180 x 100
m
Bond pad #7
DET OUT
105 x 105
m
Bond pad #8
PWR DET
175 x 100
m
Bond pad #8
PWR DET
175 x 100
m
Bond pad #9
REF2
105 x 105
m
Bond pad #10
REF1
105 x 105
m
Bond pad #11
VD3
180 x 100
m
Bond pad #12
VG3
105 x 105
m
Bond pad #13
DQ
105 x 105
m
Bond pad #14 VG2
105 x 105
m
Bond pad #15
REF3
105 x 105
m
Units: Millimeters (inches)
Thickness: 0.1016 (0.004) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance +/- 0.051 (0.002)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
June 18th, 2002
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA4502-EPU
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
C.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
C.
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