TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
October 29, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Ku Band 2W Packaged Amplifier TGA8658-EPU-SG
Key Features
Frequency Range: 13-17 GHz
Optimized for VSAT band (13.75-14.5GHz)
33 dB Nominal Gain
Typical > 33.5 dBm Psat in VSAT band @ 7V
Bias 5-8 V @ 680 mA (Quiescent)
0.5
m 3MI pHEMT Technology
Integrated power detector
6 lead package
Package Dimensions: 6.4 x 6.4 x 3.0 mm
(0.3 x 0.3 x 0.1 in
)
Fixtured Measured Performance
Bias Conditions: Vd = 7 V, Idq =680 mA
Package Dimensions 6.4 x 6.4 x 3.0 mm
Data taken
@ 14.5 GHz
Primary Applications
VSAT
Point-to-Point
18
20
22
24
26
28
30
32
34
36
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
Pin (dBm)
P
o
u
t
(d
B
m
) &
G
a
in
(d
B
)
0
200
400
600
800
1000
1200
1400
ID
S
(m
A
)
Gain
Pout
IDS
0
5
10
15
20
25
30
35
40
12
13
14
15
16
17
18
19
Frequency (GHz)
Ga
i
n
(
d
B)
-30
-20
-10
0
10
20
30
R
e
turn Loss (dB
)
Input
Output
Gain
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
October 29, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGA8658-EPU-SG
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(Vd = 7 V, Idq = 680 mA)
SYMBOL
PARAMETER
TEST CONDITION
TYPICAL
UNITS
Gain
Small Signal Gain
F = 13 17 GHz
33
dB
IRL
Input Return Loss
F = 13 17 GHz
10
dB
ORL
Output Return Loss
F = 13 17 GHz
10
dB
PWR
Output Power @ Pin = +5 dBm
F = 13 15 GHz
34
dBm
TABLE I
MAXIMUM RATINGS 1/
Symbol
Parameter
Value
Notes
Vd
Drain Supply Voltage
8 V
2/
Vg
Gate Supply Voltage Range
-5V to 0V
Idq
Drain Supply Current (Quiescent)
1.3 A
2/
| Ig |
Gate Current
18 mA
P
IN
Input Continuous Wave Power
21 dBm
2/
P
D
Power Dissipation
5 W + (85
C- T
B
)/13
2/ 3/
T
CH
Operating Channel Temperature
150
C
4/ 5/
T
M
Mounting Temperature
(30 Seconds)
320
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/ T
B
= Package backside temperature in degrees C.
4/
These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
October 29, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Measured Fixtured Data
Bias Conditions: Vd = 7 V, Idq = 680 mA
,
24
26
28
30
32
34
36
-10
-8
-6
-4
-2
0
2
4
6
8
10
Pin (dBm)
Pout
(
d
B
m
)
13.5 GHz
14GHz
14.5
15GHz
15.5GHz
0
5
10
15
20
25
30
35
40
12
13
14
15
16
17
18
19
Frequency (GHz)
Gain (
d
B)
-30
-20
-10
0
10
20
30
R
e
turn Los
s
(dB
)
Input
Output
Gain
TGA8658-EPU-SG
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
October 29, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Bias Conditions: Vd = 7 V, Idq = 680 mA
Measured Fixtured Data
620
720
820
920
1020
1120
1220
1320
-8
-6
-4
-2
0
2
4
6
8
10
Pin (dBm)
I
d
s (mA
)
13.5 GHz
14GHz
14.5
15GHz
15.5GHz
20
22
24
26
28
30
32
34
36
-8
-6
-4
-2
0
2
4
6
8
10
Pin (dBm)
Power Gain (dB)
13.5 GHz
14GHz
14.5
15GHz
15.5GHz
TGA8658-EPU-SG
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
October 29, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
-50
-40
-30
-20
-10
0
10
20
10
12
14
16
18
20
22
24
26
28
30
32
Output Power Per Tone (dBm)
IMD
3
Level (
d
B
m
)
13.5GHz
14GHz
14.5GHz
15GHz
Bias Conditions: Vd = 7 V, Idq = 680 mA
Measured Fixtured Data
TGA8658-EPU-SG
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