CHA6042
Ref. : DSCHA60423203 - 22 jul 03
1/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
13.5-17 GHz Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6042 is a compact four-stage PHEMT
HPA MMIC designed for VSAT ground
terminals and other radio applications. It
provides typically 31dBm nominal output power
at 1dB gain compression over the 13.5-17 GHz
frequency range, and more than 30dB small
signal gain.
The circuit is manufactured with a 0.25m gate
length power PHEMT process on 70m
substrate, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form. The backside of the
chip is both RF and DC grounds. This helps to
simplify the assembly process.
Main Features
Broadband performances : 13.5-17GHz
32dB
2dB linear gain
31dBm output power at 1dB comp
Chip size : 2.34 X 1.36 X 0.07mm
3
Chip size 3.18mm
2
Main Characteristics
Tamb = +25C, Vd = 8V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
13.5
17
GHz
G Small
signal
gain
32 dB
P1dB
CW output power at 1dB gain compression
31
dBm
Vd Drain
bias
voltage
8
V
Id Bias
current
750 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Electrical characteristics in JIG test fixture
14
15
16
17
20
25
30
35
40
P
-1dB
CHA6042: V
d
=8 V, I
d
=750 mA
O
u
t
p
ut
pow
er
P
-
1dB
(
d
B
m
)
an
d Li
ne
ar
G
a
in (
d
B)
Frequency (GHz)
Linear Gain (P
in
=0 dBm)
Typical CHA6042 MMIC characteristic
13.5-17 GHz POWER AMPLIFIER
CHA6042
Ref. : DSCHA60423203 - 22 jul 03
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Tamb = +25C, Vd = 8V, Id=750 mA (typically Vg=-0.45V)
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
13.5
17
GHz
G
Small signal gain (1)
32
dB
G
Small signal gain flatness
2
dB
P1dB
CW output power at 1dB gain compression (1)
30
31
dBm
Psat
Saturated output power (1)
32
dBm
RLin
Input return loss (1)
-15
-12
dB
RLout
Output return loss (1)
-12
-7
dB
Is
Reverse Isolation (1)
40
dB
Vd
Drain bias voltage (2)
8
9
V
Id
Bias current (2)
750
1000
mA
Vg Gate
bias
voltage
-0.45 V
(1)
These values are representative for CW measurements in JIG test fixture (losses uncorrected).
(2)
Adjusting Vd from 8- to 9V or Id from 750- to 1000mA increases by approx. 0.5dB the P
-1dB
over
the bandwidth.
Absolute Maximum Ratings
(2)
Tamb = +25C
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
9
V
Id
Maximum bias current
1.2
A
Vg
Min. and max. gate bias voltage
-2.5 ~ 0
V
Pin
Maximum peak input power overdrive (3)
+8
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(2) Operation of this device above anyone of these parameters may cause permanent damage.
(3) Duration < 1s.
13.5-17 GHz POWER AMPLIFIER
CHA6042
Ref. : DSCHA60423203 - 22 jul 03
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical CW performance @ Tamb=25C
10
11
12
13
14
15
16
17
18
19
20
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
CHA6042: V
d
=9 V, I
d
=700 mA
S
P
a
r
a
me
te
r
(dB
)
Frequency (GHz)
Typical JIG test-fixture S-parameters at V
d
=9 V and I
d
=700 A
14
15
16
17
20
25
30
35
40
P
-1dB
CHA6042: V
d
=8 V, I
d
=750 mA
O
u
t
put
p
o
wer
P
-1
dB
(
d
B
m
) and
Li
ne
ar G
a
i
n
(
d
B
)
Frequency (GHz)
Linear Gain (P
in
=0 dBm)
Typical CW output power at 1-dB gain compression (JIG test-fixture) at V
d
=8 V and I
d
=750 mA
14
15
16
17
20
25
30
35
40
P
-1dB
CHA6042: V
d
=9 V, I
d
=750 mA
O
u
t
put
p
o
w
e
r
P
-1
d
B
(
d
Bm
)
an
d Linear
G
a
in (
d
B
)
Frequency (GHz)
Linear Gain (P
in
=0 dBm)
Typical CW output power at 1-dB gain compression (JIG test-fixture) at V
d
=9 V and I
d
=750 mA
13.5-17 GHz POWER AMPLIFIER
CHA6042
Ref. : DSCHA60423203 - 22 jul 03
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Remark:
Wire bonding of VG1 is optional; VG1 and VG2 are connected on-chip, as well as VD1
and VD2.
13.5-17 GHz POWER AMPLIFIER
CHA6042
Ref. : DSCHA60423203 - 22 jul 03
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Bonding pad positions
Dimensions : (units m)
2340
35
1360
35
Thickness 70
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