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WSD501H
SCHOTTKY BARRIER
RECTIFIERS
100m AMPERES
40 VOLTS
*Extremely Low V .
*Very Small Conduction Losses.
*Schottky Barrier Diodes Encapsulated in SOD-323 Package.
Unit:mm
F
Dim Min Max
A
B
C
D
E
H
J
K
1.60 1.80
1.15 1.35
0.80 1.00
0.25 0.40
0.15 REF
0.00 0.10
0.089 0.377
2.30 2.70
PIN 1.CATHODE
2.ANODE
MILLMETERS
WEITRON
Surface Monut Schottky Barrier Diode
Features:
SOD-323 Outline Demensions
SOD-323
1
2
MAXIMUM RATING
Characteristics
Symbol
WSD 501H
Unit
Breakdown Voltage
Continuous Reverse Voltage
Average Rectified Forward Current
Peak Forward Surge Current
(8.3ms1/2 Sine Wave)
Storage Temperature
BV
VR
IO
IFSM
Tstg
45
40
100
1.0
-40 to+125
Volts
Volts
mAmps
Amps
C
ELECTRICAL CHARACTERISTICS (Ta=25 C)
Characteristics
Symbol
WSD 501H
Unit
Maximum Instantneous Forward Voltage
IF=100mA
Maximum Instantneous Reverse Current
(VR=10V)
Device Marking
Typical Junction Capacitance
(VR=10V, f=1MHz)
VF
IR
CJ
20
JV
0.55
30
Volts
Amps
Pf
WEITRON
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WSD501H
0
5
10
15
20
25
30
35
100
10
1
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
E
E
N
T
E
R
M
I
N
A
L
S
:
C
T
(
p
F
)
REVERSE VOLTASGE : V
R
(V)
Fig.3 Capacitance between
terminals characteristics
Electrical characteristics curves (Ta=25 C unless specified otherwise)
0
25
50
75
100
125
100
80
60
40
20
0
AMBIENT TEMPERATURE : Ta ( C)
I o
C
U
R
R
E
N
T
(
%
)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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125 C
75 C
25 C
0
10
20
30
40
1m
10m
1
0.1
100
10
REVERSE VOLTAGE:VR (V)
R
E
V
E
R
S
E
C
U
R
R
E
N
T
:
I
R
(
A
)
Fig.2 Reverse characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
1000
100
10
1
12
5
C
25
C
75
C
-2
5
C
FORWARD VOLTAGE:VF (V)
FIG: 1 Forward characteristics
F
O
R
W
A
R
D
C
U
R
R
E
N
T
:
I F
(m
A
)
WSD501H
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