XFC14N60P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
XGK60N60C2D1 - Mid-Frequency Range (15KHz-40KHz) Types Single IGBTDCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on
XTA10N60P - Polar N-channel MOSFETsInternational standard packages Unclamped Inductive Switching (UIS)rated Low package inductance- easy to drive and to protect
XTA62N15P - Polar N-channel MOSFETsInternational standard packages Unclamped Inductive Switching (UIS)rated Low package inductance- easy to drive and to protect
XTA75N10P - Polar N-channel MOSFETsInternational standard packages Unclamped Inductive Switching (UIS)rated Low package inductance- easy to drive and to protect
XTQ110N10P - Polar N-channel MOSFETsInternational standard packages Unclamped Inductive Switching (UIS)rated Low package inductance- easy to drive and to protect
XTQ120N20P - Polar N-channel MOSFETsInternational standard packages Unclamped Inductive Switching (UIS)rated Low package inductance- easy to drive and to protect
XTQ62N15P - Polar N-channel MOSFETsInternational standard packages Unclamped Inductive Switching (UIS)rated Low package inductance- easy to drive and to protect
XTT110N10P - Polar N-channel MOSFETsInternational standard packages Unclamped Inductive Switching (UIS)rated Low package inductance- easy to drive and to protect
XTT36N50P - Polar N-channel MOSFETsInternational standard packages Unclamped Inductive Switching (UIS)rated Low package inductance- easy to drive and to protect