IXFN50N80Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFN66N50Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFN70N60Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFN75N50 - Hiperfet Power Mosfets Single Die Mosfet
IXFN80N48 - HiperFET(tm) Power MOSFETs: Single Die MOSFET, N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low TRR
IXFN80N50 - HiPerFET Power MOSFETs Single Die MOSFET
IXFN80N50P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFN80N50Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFN90N30 - Hiperfet Power Mosfets Single Die Mosfet
IXFP10N60P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFP12N50P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFP14N60P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFP16N50P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFR12N100Q - N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
IXFR140N20P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFR14N100Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFR40N50Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFR44N50P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFR44N50Q - Hiperfet Power Mosfets Isoplus247 Q-class
IXFR64N50P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFR64N60P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFR66N50Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFT40N50Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFT44N50P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFX30N100Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFX32N50Q - HiperFET (tm) Power MOSFETs Q-class: 500v, 32a
IXFX52N60Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFX62N25 - HiPerFET Power MOSFETs Single MOSFET Die
IXFX64N50P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFX64N60P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFX66N50Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXGC16N60B2 - Mid-Frequency Range (15KHz-40KHz) Types Single IGBTDCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on
IXGC16N60C2 - High Frequency Range (>40 KHz) Single IGBT TypesDCB Isolated mounting tab UL recognized (E153432) Meets TO-273 package Outline High current handling capability
IXGH25N160 - High Voltage NPT IGBTs * Vces up to 1700V * Rugged Non_Punch Through IGBTs * Low Saturation/high peak pulse current types for capacitor discharge applications * High Speed Switching Types of Resonsant Inverters
IXGH30N60C2 - Mid-Frequency Range (15KHz-40KHz) Types Single IGBTDCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on
IXGH30N60C2D1 - High Frequency Range (>40 KHz) IGBT/FRED TypesVery high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on