RFL4N12 Intersil - 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs
RFL4N15 Intersil - 4a, 120v and 150v, 0.400 Ohm, N-channel Power Mosfets
RF340 Intersil - 10a, 400v, 0.550 Ohm, N-channel Power Mosfet
RF3808S IRF - Power Mosfet(vdss=75v, Rds(on)=0.007ohm, Id=106aЁм)
RF6638 IRF - The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
RFW122-M-PA Vishay - ISM Transceiver Module with Power AmplifierThe RFW122-M-PA isA small PCB module whichincludes the RFW122-M module, besed on VishayRFWaves* RFW122 transceiver chipset, andA PowerAmplifier module. This module was created in order toprovideA solution for applications that haveA need oflonger range than provided by the basic RFW122-Mmodule.
RFW322-M Vishay - Transceiver ModuleThe RFW322-M ISM Transceiver Module isA shortrangewireless radio transceiver, designed by VishayRFWaves*. The transceiver is intended for use in theworld wide unlicensed Industrial, Scientific and Medical(ISM) band of 2400 - 2483.5 MHz, complying withworldwide regulations and standards.The module core consists of 2 chips, offering smallsize, low power consumption and simple integrationwith applications.The module antenna interface reflectsA 200 Ω differentialimpedance.Module has 3
RFW322-M-PA Vishay - Transceiver Module with Power AmplifierThe RFW322-M-PA isA small PCB module whichincludes the RFW322-M module, based on RFWaves*RFW322 transceiver chipset, andA Power Amplifiermodule. This module was created in order to provide asolution for applications that haveA need of longerrange than provided by the basic RFW322-M module.