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Components list, symbol «K», page 1

  1. K002-798 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  2. K005-600 Eichhoff - Spark Quenching Capacitors
  3. K005-601 Eichhoff - Spark Quenching Capacitors
  4. K005-650 Eichhoff - Spark Quenching Capacitors
  5. K006-006-500 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  6. K006-200 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  7. K006-600-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  8. K006-700 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  9. K006-700-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  10. K006-700-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  11. K006-700-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  12. K006-750-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  13. K006-750-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  14. K006-750-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  15. K006-800-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  16. K006-800-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  17. K006-800-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  18. K006-875-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  19. K006-875-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  20. K006-875-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  21. K006-900-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  22. K006-900-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  23. K006-900-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  24. K007-200 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  25. K008-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  26. K009-200 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  27. K009-550 Eichhoff - Foru-pole Radio Interference Suppression Capacitors
  28. K-01401G Para Light - LCD Back Light, Cob Type, LCD Character 8x2
  29. K-01401GX Para Light - LCD Back Light, Cob Type, LCD Character 8x2
  30. K015-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  31. K016-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  32. K017-000 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  33. K017-250 Eichhoff - Radio-interference Suppression Capacitors
  34. K018-000 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  35. K-02416G Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  36. K-02416GX Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  37. K-02425G Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  38. K-02425GX-P3 Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  39. K-02615G Para Light - LCD Back Light, Cob Type, LCD Character 16x1
  40. K-02615GX-P3 Para Light - LCD Back Light, Cob Type, LCD Character 16x1
  41. K-02803G-P Неопределенные - Lcd Back Light, Cob Type, Lcd Character 240 X 128
  42. K02C National Semiconductor - Metal Can, To-3 2 Lead Low Profile
  43. K-03203G Para Light - LCD Back Light, Cob Type, LCD Character 16x1(L)
  44. K-03203GX Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 16��1(L)
  45. K-04204G Para Light - LCD Back Light, Cob Type, LCD Character 20x2
  46. K-04204GX Неопределенные - Lcd Back Light, Cob Type, Lcd Character 16��1(l)
  47. K-04211G Para Light - LCD Back Light, Cob Type, LCD Character 20x2
  48. K-04211GX-P Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 20 X 2, 16 X 4
  49. K-05205G Para Light - LCD Back Light, Cob Type, LCD Character 16x4
  50. K-05205GX Неопределенные - Lcd Back Light, Cob Type, Lcd Character 20 X 2, 16 X 4
  51. K-05205GX-P Para Light - LCD Back Light, Cob Type, LCD Character 16x4
  52. K-05401G Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  53. K-05401GX Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  54. K-05401GX-P Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  55. K-05601G Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  56. K-05601GX Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  57. K-05601GX-P Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  58. K-05606G Para Light - LCD Back Light, Cob Type, LCD Character 16x2(L)
  59. K-05606GX Para Light - LCD Back Light, Cob Type, LCD Character 16x2(L)
  60. K-06601G Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  61. K-06601GX Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  62. K-07205G Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  63. K08PN40 Fairchild - TRIAC (Silicon Bidirectional Thyristor)
  64. K08PN60 Fairchild - TRIAC (Silicon Bidirectional Thyristor)
  65. K0900E70 Teccor - Thyristor Product Catalog
  66. K0900G Teccor - Thyristor Product Catalog
  67. K0900S Teccor - Thyristor Product Catalog
  68. K1 Неопределенные - KS Series KEY SWITCHES
  69. K-10004G Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  70. K-10004GX Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  71. K100F Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 200, Package = Axial-leaded,epoxy, Terminati...
  72. K100S Неопределенные - 2,500V - 10,000V Rectifiers
  73. K100S Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 3000, Package = Axial-leaded,epoxy, Terminat...
  74. K100UF Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 100, Package = Axial-leaded,epoxy, Terminati...
  75. K101 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  76. K1010 COSMO - High Reliability Photo Coupler
  77. K1010A COSMO - Photocoupler, CTR 80 to 160%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  78. K1010B COSMO - Photocoupler, CTR 130 to 260%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  79. K1010C COSMO - Photocoupler, CTR 200 to 400%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  80. K1010D COSMO - Photocoupler, CTR 300 to 600%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  81. K1010E COSMO - Photocoupler, CTR 50 to 600%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  82. K102 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  83. K102P Неопределенные - Optically Coupled Isolator
  84. K102P1 Неопределенные - Optically Coupled Isolator
  85. K102P2 Неопределенные - Optically Coupled Isolator
  86. K102P3 Неопределенные - Optically Coupled Isolator
  87. K104 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  88. K105 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  89. K1050E70 Teccor - Thyristor Product Catalog
  90. K1050E70 Teccor - Silicon Bilateral Voltage Triggered Switch
  91. K1050F70 Teccor - Thyristor Product Catalog
  92. K1050G Teccor - Thyristor Product Catalog
  93. K1050G Teccor - silicon bilateral voltage triggered switch
  94. K1050G70 Teccor - Thyristor Product Catalog
  95. K1050S Teccor - Thyristor Product Catalog
  96. K1050S Teccor - silicon bilateral voltage triggered switch
  97. K1050S70 Teccor - Thyristor Product Catalog
  98. K10N06FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  99. K10N07FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  100. K1.1 Semikron - For Stud Devices
  101. K110 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  102. K1100BA MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic...
  103. K1100E70 Teccor - Thyristor Product Catalog
  104. K1100E70 Teccor - silicon bilateral voltage triggered switch
  105. K1100F MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.500 to 100.000 MHZ, Output Logic...
  106. K1100G Teccor - Thyristor Product Catalog
  107. K1100G Teccor - silicon bilateral voltage triggered switch
  108. K1100S Teccor - Thyristor Product Catalog
  109. K1100S Teccor - silicon bilateral voltage triggered switch
  110. K11041 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = up to 140.000 MHZ, Output Logic =...
  111. K11044 TOKO - Temperature Sensor Ic
  112. K11044-44C TOKO - TEMPERATURE SENSOR IC
  113. K11044TL TOKO - TEMPERATURE SENSOR IC
  114. K1110D MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  115. K1120D MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  116. K1144B MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.750 to 35.000 MHZ, Output Logic...
  117. K1149 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 40.000 to 160.000 MHZ, Output Logi...
  118. K1149CQA MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 139.264, 155.520 MHZ, Output Logic...
  119. K1149DAD MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 77.760 MHZ, Output Logic = Pecl,...
  120. K1.1-M16 Semikron - For stud devices
  121. K120 Knox - Low Level Zener Diodes Very Low Voltage, Low Leakage
  122. K120 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  123. K-12001G Para Light - LCD Back Light, Cob Type, LCD Character 40x4
  124. K-12001GX Para Light - LCD Back Light, Cob Type, LCD Character 40x4
  125. K1200E70 Teccor - Thyristor Product Catalog
  126. K1200E70 Teccor - silicon bilateral voltage triggered switch
  127. K1200G Teccor - Thyristor Product Catalog
  128. K1200G Teccor - silicon bilateral voltage triggered switch
  129. K1200S Teccor - Thyristor Product Catalog
  130. K1200S Teccor - silicon bilateral voltage triggered switch
  131. К129НТ1А-1 RD Alfa - Дифференциальная пара транзисторов
  132. К129НТ1Б-1 RD Alfa - Дифференциальная пара транзисторов
  133. К129НТ1Д-1 RD Alfa - Дифференциальная пара транзисторов
  134. К129НТ1Е-1 RD Alfa - Дифференциальная пара транзисторов
  135. К129НТ1Г-1 RD Alfa - Дифференциальная пара транзисторов
  136. К129НТ1И-1 RD Alfa - Дифференциальная пара транзисторов
  137. К129НТ1В-1 RD Alfa - Дифференциальная пара транзисторов
  138. К129НТ1Ж-1 RD Alfa - Дифференциальная пара транзисторов
  139. K130 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  140. K1300 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 70.000 to 120.000 MHZ, Output Logi...
  141. K1300E70 Teccor - Thyristor Product Catalog
  142. K1300E70 Teccor - silicon bilateral voltage triggered switch
  143. K1300G Teccor - Thyristor Product Catalog
  144. K1300G Teccor - silicon bilateral voltage triggered switch
  145. K1300S Teccor - Thyristor Product Catalog
  146. K1300S Teccor - silicon bilateral voltage triggered switch
  147. K-13204G Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  148. K-13204GX Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  149. K139 Неопределенные - Diy Kit 139. Stereo 1w Audio Amplifier With Dc Volume Control
  150. K140 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  151. K1400A MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = up to 140.000 MHZ, Output Logic =...
  152. K1400E70 Teccor - Thyristor Product Catalog
  153. K1400E70 Teccor - silicon bilateral voltage triggered switch
  154. K1400G Teccor - Thyristor Product Catalog
  155. K1400G Teccor - silicon bilateral voltage triggered switch
  156. K1400S Teccor - Thyristor Product Catalog
  157. K1400S Teccor - silicon bilateral voltage triggered switch
  158. K142 Sanyo - Very High-Speed Switching Applications
  159. K142 ICST - Opl3/4+codec Portable Clock Source
  160. K1462 Sanyo - Very High-Speed Switching Applications
  161. К1475УД1Р RD Alfa - Быстрый широкополосный операционный усилитель
  162. К1475УД1С RD Alfa - Быстрый широкополосный операционный усилитель
  163. К1475УД3АТ RD Alfa - Четырехканальный операционный усилитель
  164. К1475УД3БТ1 RD Alfa - Четырехканальный операционный усилитель
  165. К1475УД4АТ RD Alfa - Четырехканальный операционный усилитель
  166. К1475УД4БТ1 RD Alfa - Четырехканальный операционный усилитель
  167. K14N04FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  168. K150 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  169. K150 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  170. K1500E70 Teccor - Thyristor Product Catalog
  171. K1500E70 Teccor - silicon bilateral voltage triggered switch
  172. K1500G Teccor - Thyristor Product Catalog
  173. K1500G Teccor - silicon bilateral voltage triggered switch
  174. K1500S Teccor - Thyristor Product Catalog
  175. K1500S Teccor - silicon bilateral voltage triggered switch
  176. K1523BA MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 35.000 MHZ, Output Logic = CM...
  177. K1524A MtronPTI - Package Description = 14 Pin Dip, Frequency = 3.000 to 35.000 MHZ, Output Logic = CM...
  178. K1525C MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 55.000 MHZ, Output Logic = CM...
  179. K1526A MtronPTI - Package Description = 9 X 14 MM J-lead, Frequency = 2.000 to 40.000 MHZ, Output Logi...
  180. K1526B MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  181. K1526BLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  182. K1526C MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  183. K1526CLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  184. K1526D MtronPTI - Package Description = 9 X 14 MM J-lead, Frequency = 2.000 to 160.000 MHZ, Output Log...
  185. K1527A MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 51.840 MHZ, Output Logic = CM...
  186. K1528D MtronPTI - Package Description = 14 Pin Dip, Frequency = 35.000 to 105.000 MHZ, Output Logic =...
  187. K1536B MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  188. K1536BLC Неопределенные - Low Cost Surface Mount Vcxos
  189. K1536BLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  190. K1536BLCM Неопределенные - LOW COST SURFACE MOUNT VCXOS
  191. K1536C MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  192. K1536CLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  193. K15462L TOKO - For Dsc, DVC and Portable Video Equipment, Composite Signal, Built-in LPF
  194. К154УД1А RD Alfa - Микромощный операционный усилитель
  195. К154УД1Б RD Alfa - Микромощный операционный усилитель
  196. К154УД3А RD Alfa - Быстродействующий операционный усилитель
  197. К154УД3Б RD Alfa - Быстродействующий операционный усилитель
  198. К154УД4А RD Alfa - Сверхбыстрый операционный усилитель
  199. К154УД4Б RD Alfa - Сверхбыстрый операционный усилитель
  200. K155 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  201. K155NA1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  202. K155NA2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  203. K155NA3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  204. K155NA4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  205. K155NA6 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  206. K155NA7 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  207. K155NA8 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  208. K155NE1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  209. K155NE2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  210. K155NE4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  211. K155NE5 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  212. K155NH1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  213. K155NM1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  214. K155NM2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  215. K155NM3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  216. K155NP1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  217. K155NP3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  218. K155NP4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  219. K155TB1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  220. K155TM2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  221. K155TM5 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  222. K155TM7 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  223. K1570A MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  224. K1570AQA MtronPTI - Package Description = 14 Pin Gull Wing, Frequency = 1.000 to 52.000 MHZ, Output Logi...
  225. K1570AQG MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  226. K1570AQH MtronPTI - Package Description = 14 Pin Dip, Frequency = 25.000 to 52.000 MHZ, Output Logic = C...
  227. K1573A MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  228. К159НТ1А RD Alfa - Дифференциальная пара транзисторов
  229. К159НТ1Б RD Alfa - Дифференциальная пара транзисторов
  230. К159НТ1Д RD Alfa - Дифференциальная пара транзисторов
  231. К159НТ1Е RD Alfa - Дифференциальная пара транзисторов
  232. К159НТ1Г RD Alfa - Дифференциальная пара транзисторов
  233. К159НТ1В RD Alfa - Дифференциальная пара транзисторов
  234. K1601 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 16.000 to 30.000 MHZ, Output Logic...
  235. K1601T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  236. K1601TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  237. K1602 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 16.000 to 30.000 MHZ, Output Logic...
  238. K1602SE MtronPTI - Package Description = 14 Pin Dip, Frequency = 90.000 to 115.000 MHZ, Output Logic =...
  239. K1602T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  240. K1602TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  241. K1603T Неопределенные - 14 DIP, 5.0 Volt, CMOS/TTL, TCXO
  242. K1603T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  243. K1603TE Неопределенные - 14 DIP, 5.0 Volt, CMOS/TTL, TCXO
  244. K1603TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  245. K1610 MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 27.000 MHZ, Output Logic = Cl...
  246. K1610T MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 30.000 MHZ, Output Logic...
  247. K1613 MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 25.000 MHZ, Output Logic = Cl...
  248. K164 Siemens - Temperaturmessung Bedrahtete Scheiben
  249. K170 Toshiba - FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
  250. K170 TOKO - Low Voltage Operational Amplifier
  251. K170 ICST - Low Emi Clock Generator
  252. K1700A MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  253. K1713 Hamamatsu - Two-color detector
  254. K1713-01 Hamamatsu - Two-color Detector
  255. K1713-02 Hamamatsu - Two-color detector
  256. K1713-05 Hamamatsu - Two-color detector
  257. K1713-08 Hamamatsu - Two-color Detector
  258. K1713-09 Hamamatsu - Two-color detector
  259. K17255B MtronPTI - Package Description = 14 Pin Dip, Frequency = 155.520 MHZ, Output Logic = 10KH Pecl...
  260. K1745 Неопределенные - 2SK1745
  261. K176 Неопределенные - MOS-Intergrated Microcircuits
  262. K176TM1 Неопределенные - Mos-intergrated Microcircuits
  263. K176TM2 Неопределенные - MOS-Intergrated Microcircuits
  264. K1773 Hitachi - Silicon N-Channel MOS FET
  265. K179 Siemens - Silicon Piezoresistive Absolute Pressure Sensor
  266. K180 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  267. K-18001G-P Para Light - LCD Back Light, Cob Type, LCD Character 240x128
  268. K-18001GX-P Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 240 X 128
  269. K-18004SRDG-P Para Light - LCD Back Light, Cob Type, LCD Character 240x128
  270. K1-ADP+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  271. K1B3216B7D Samsung - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance feature.
  272. K1B3216BDD Samsung - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  273. K1B5616BAM Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  274. K1B5616BAM-I Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  275. K1B5616BBM Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  276. K1B5616BBM-I Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  277. K1B6416B6C Samsung - 4mx16 Bit Synchronous Burst Uni-transistor Random Access Memory
  278. K1B6416B6C-I Samsung - 4M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  279. K1-DBTC Mini-Circuits - KIT DIR COUP / SURF MT / RoHS
  280. K1-ERA Mini-Circuits - KIT ML AMPL / Sn
  281. K1-ERASM Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  282. K1-GAT+ Mini-Circuits - KIT FXD ATTEN / SURF MOUNT
  283. K1-HAT Mini-Circuits - KIT FXD ATTEN / BNC
  284. K1-HAT+ Mini-Circuits - KIT FXD ATTEN / BNC / RoHS
  285. K1-HFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  286. K1-LAT Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  287. K1-LAVI+ Mini-Circuits - KIT DBL BAL MIX / SURF MT/RoHS
  288. K1-LEE Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  289. K1-LFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  290. K1-MAN Mini-Circuits - KIT BROADBAND AMPL
  291. K1-MNA Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  292. K1-PAT Mini-Circuits - KIT FXD ATTEN / SURF MT / Sn
  293. K1S161611A Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  294. K1S161611A-I Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  295. K1S16161CA Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
  296. K1S16161CA-I Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
  297. K1S1616B1A Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  298. K1S1616B1A-BI70 Samsung - 1mx16 Bit Uni-transistor Random Access Memory
  299. K1S1616B1A-BI85 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  300. K1S1616B1A-FI70 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  301. K1S1616B1A-FI85 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  302. K1S1616B1A-I Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  303. K1S1616BCA Samsung - 1mx16 Bit Page Mode Uni-transistor Random Access Memory
  304. K1S1616BCA-I Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access MemoryThe K1S1616BCA is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  305. K1S2816BCM Samsung - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  306. K1S2816BCM-I Samsung - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  307. K1S321611C Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  308. K1S321611C-FI70 Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  309. K1S321611C-I Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  310. K1S321615M Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  311. K1S321615M-E Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  312. K1S3216B1C Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  313. K1S3216B1C-I Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  314. K1S3216BCC Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  315. K1S3216BCC-FI70 Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  316. K1S3216BCC-FI85 Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  317. K1S3216BCD Samsung - 2mx16 Bit Page Mode Uni-transistor Random Access Memory
  318. K1S3216BCD-I Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCD is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  319. K1S64161CC Samsung - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
  320. K1S64161CC-I Samsung - 4M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S64161CC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  321. K1S6416BCC Samsung - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
  322. K1S6416BCC-I Samsung - 4Mx16 bit Page Mode Uni-Transistor Random Access Memory
  323. K1-SBTC+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  324. K1V10 Shindengen - Sidac
  325. K1V11 Shindengen - Sidac
  326. K1V12 Shindengen - Sidac
  327. K1V14 Shindengen - Sidac
  328. K1V16 Shindengen - Sidac
  329. K1V18 Shindengen - Sidac
  330. K1V22 Shindengen - Sidac
  331. K1V22W Shindengen - Sidac
  332. K1V24 Shindengen - Sidac
  333. K1V24W Shindengen - Sidac
  334. K1V26 Shindengen - Sidac
  335. K1V26W Shindengen - Sidac
  336. K1V33 Shindengen - Sidac
  337. K1V33W Shindengen - Sidac
  338. K1V34 Shindengen - Sidac
  339. K1V34W Shindengen - Sidac
  340. K1V36 Shindengen - Sidac
  341. K1V36W Shindengen - Sidac
  342. K1V38 Shindengen - Sidac
  343. K1V38W Shindengen - Sidac
  344. K1V5 Shindengen - Sidac
  345. K1V6 Shindengen - Sidac
  346. K1V8 Shindengen - Sidac
  347. K1VA10 Shindengen - Sidac
  348. K1VA11 Shindengen - Sidac
  349. K1VA12 Shindengen - Sidac
  350. K1VA14 Shindengen - Sidac
  351. K1VA16 Shindengen - Sidac
  352. K1-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  353. K1-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  354. K1-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  355. K1-VAT2+ Mini-Circuits - KIT PWR SPLTR CMBD / SMA/ RoHS
  356. K2 Неопределенные - KS Series KEY SWITCHES
  357. K200 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  358. K2000E70 Teccor - Thyristor Product Catalog
  359. K2000E70 Teccor - silicon bilateral voltage triggered switch
  360. K2000F1 Teccor - Thyristor Product Catalog
  361. K2000F1 Teccor - silicon bilateral voltage triggered switch
  362. K2000G Teccor - Thyristor Product Catalog
  363. K2000G Teccor - silicon bilateral voltage triggered switch
  364. K2000S Teccor - Thyristor Product Catalog
  365. K2000S Teccor - silicon bilateral voltage triggered switch
  366. K201 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  367. K2010 COSMO - High Reliability Photo Coupler
  368. K2011 Неопределенные - If Filter For Intercarrier Application (if= 38.0 Mhz. Standard B/g-ccir, D/k-oirt)
  369. K202 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  370. K204 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  371. K210 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  372. K21100B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  373. K21100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  374. K21100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  375. K21100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  376. K21100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  377. K21100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  378. K21100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  379. K21100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  380. K21100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  381. K21100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  382. K21100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  383. K21100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  384. K21100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  385. K21100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  386. K21100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  387. K21100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  388. K21100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  389. K21100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  390. K21100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  391. K21100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  392. K21100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  393. K21100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  394. K21100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  395. K21100Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  396. K21100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  397. K21100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  398. K21120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  399. K21120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  400. K21120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  401. K21120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  402. K21120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  403. K21120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  404. K21120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  405. K21120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  406. K21120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  407. K21120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  408. K21120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  409. K21120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  410. K21120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  411. K21120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  412. K21120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  413. K21120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  414. K21120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  415. K21120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  416. K21120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  417. K21120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  418. K21120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  419. K21120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  420. K21120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  421. K21120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  422. K21120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  423. K21120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  424. K21160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  425. K21160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  426. K21160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  427. K21160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  428. K21160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  429. K21160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  430. K21160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  431. K21160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  432. K21160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  433. K21160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  434. K21160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  435. K21160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  436. K21160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  437. K21160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  438. K21160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  439. K21160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  440. K21160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  441. K21160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  442. K21160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  443. K21160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  444. K21160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  445. K21160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  446. K21160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  447. K21160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  448. K21160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  449. K21160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  450. K2120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  451. K2120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  452. K2120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  453. K2120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  454. K2120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  455. K2120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  456. K2120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  457. K2120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  458. K2120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  459. K2120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  460. K2120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  461. K2120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  462. K2120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  463. K2120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  464. K2120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  465. K2120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  466. K2120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  467. K2120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  468. K2120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  469. K2120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  470. K2120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  471. K2120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  472. K2120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  473. K2120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  474. K2120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  475. K2120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  476. K2140B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  477. K2140B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  478. K2140B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  479. K2140C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  480. K2140C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  481. K2140D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  482. K2140D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  483. K2140H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  484. K2140H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  485. K2140M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  486. K2140M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  487. K2140N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  488. K2140N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  489. K2140Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  490. K2140Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  491. K2140V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  492. K2140V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  493. K2140W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  494. K2140W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  495. K2140X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  496. K2140X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  497. K2140Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  498. K2140Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  499. K2140Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  500. K2140Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  501. K2140Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  502. K2141 NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  503. K2160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  504. K2160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  505. K2160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  506. K2160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  507. K2160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  508. K2160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  509. K2160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  510. K2160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  511. K2160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  512. K2160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  513. K2160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  514. K2160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  515. K2160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  516. K2160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  517. K2160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  518. K2160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  519. K2160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  520. K2160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  521. K2160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  522. K2160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  523. K2160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  524. K2160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  525. K2160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  526. K2160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  527. K2160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  528. K2160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  529. K2161 Sanyo - Very High-Speed Switching Applications
  530. K2180B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  531. K2180B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  532. K2180B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  533. K2180C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  534. K2180C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  535. K2180D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  536. K2180D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  537. K2180H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  538. K2180H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  539. K2180M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  540. K2180M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  541. K2180N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  542. K2180N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  543. K2180Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  544. K2180Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  545. K2180V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  546. K2180V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  547. K2180W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  548. K2180W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  549. K2180X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  550. K2180X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  551. K2180Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  552. K2180Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  553. K2180Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  554. K2180Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  555. K2180Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  556. K2185 Shindengen - VX-2 Series Power MOSFET(500V5A)
  557. K220 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  558. K220 Неопределенные - Contractor Flashlight
  559. K2200E70 Teccor - Thyristor Product Catalog
  560. K2200E70 Teccor - silicon bilateral voltage triggered switch
  561. K2200F1 Teccor - Thyristor Product Catalog
  562. K2200F1 Teccor - silicon bilateral voltage triggered switch
  563. K2200G Teccor - Thyristor Product Catalog
  564. K2200G Teccor - silicon bilateral voltage triggered switch
  565. K2200S Teccor - Thyristor Product Catalog
  566. K2200S Teccor - silicon bilateral voltage triggered switch
  567. K240 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  568. K240 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  569. K2400E70 Teccor - Thyristor Product Catalog
  570. K2400E70 Teccor - silicon bilateral voltage triggered switch
  571. K2400F1 Teccor - Thyristor Product Catalog
  572. K2400F1 Teccor - silicon bilateral voltage triggered switch
  573. K2400G Teccor - Thyristor Product Catalog
  574. K2400G Teccor - silicon bilateral voltage triggered switch
  575. K2400S Teccor - Thyristor Product Catalog
  576. K2400S Teccor - silicon bilateral voltage triggered switch
  577. K2401F1 Teccor - silicon bilateral voltage triggered switch
  578. k246 Toshiba - N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER and DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
  579. k246 NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  580. k246 Rohm - Small switching (60V, 2A)
  581. k246 Sanyo - Ultrahigh-Speed Switching Applications
  582. k246 Fuji - N-channel MOS-FET
  583. k246 Siemens - Silicon Spreading Resistance Temperature Sensor In Miniature Leaded Plastic Package
  584. K250 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  585. K2500E70 Teccor - Thyristor Product Catalog
  586. K2500E70 Teccor - silicon bilateral voltage triggered switch
  587. K2500F1 Teccor - Thyristor Product Catalog
  588. K2500F1 Teccor - silicon bilateral voltage triggered switch
  589. K2500G Teccor - Thyristor Product Catalog
  590. K2500G Teccor - silicon bilateral voltage triggered switch
  591. K2500S Teccor - Thyristor Product Catalog
  592. K2500S Teccor - silicon bilateral voltage triggered switch
  593. K2564 Shindengen - VX-2 Series Power MOSFET(600V 8A)
  594. K25C81 Semtech - Versatile Pc/xc/at/ps/2 Compatible Keyboard Encoder
  595. K25C81-FB Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  596. K25C81-FN Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  597. K25C81-P Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  598. K25F Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 200, Package = Axial-leaded,epoxy, Terminat...
  599. K25S Неопределенные - 2,500V - 10,000V Rectifiers
  600. K25S Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 3000, Package = Axial-leaded,epoxy, Termina...
  601. K25UF Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 100, Package = Axial-leaded,epoxy, Terminat...
  602. K270 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  603. K2717 Toshiba - N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER and MOTOR DRIVE APPLICATIONS)
  604. K2740 Rohm - Switching (600V, 7A)
  605. K2750 Toshiba - N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER and MOTOR DRIVE APPLICATIONS)
  606. K2955M EPCOS - IF Filter for Intercarrier Applications
  607. K2971M Неопределенные - If Filter For Intercarrier Applications
  608. K2-BW1+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  609. K2-BW2+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  610. K2-BW3+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  611. K2-DBTC Mini-Circuits - KIT DIR COUP / SURF MOUNT/RoHS
  612. K2-ERA Mini-Circuits - KIT ML AMPL / Sn
  613. K2-GAT Mini-Circuits - KIT FXD ATTEN / SURF MOUNT
  614. K2-HAT Mini-Circuits - KIT FXD ATTEN / BNC
  615. K2-HAT+ Mini-Circuits - KIT FXD ATTEN / BNC / RoHS
  616. K2-HFCN+ Mini-Circuits - KIT HI PAS FLTR / SURF MT/RoHS
  617. K2-LFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  618. K2-MNA Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  619. K2-PAT+ Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  620. K2-SBTC+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  621. K2-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  622. K2-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  623. K2-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  624. K2-VAT2+ Mini-Circuits - KIT DIR COUP / SURF MT / RoHS
  625. K3 Неопределенные - KS Series KEY SWITCHES
  626. K300 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  627. K300 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  628. K3000F1 Teccor - Thyristor Product Catalog
  629. K3000F1 Teccor - silicon bilateral voltage triggered switch
  630. K301 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  631. K3010 Vishay - Optocoupler With Phototriac Output
  632. K3010 COSMO - High Reliability Photo Coupler
  633. K3010P Vishay - Optocoupler with Phototriac Output
  634. K3010PG Vishay - Optocoupler with Phototriac Output
  635. K3011 Vishay - Optocoupler with Phototriac Output
  636. K3011P Vishay - Optocoupler with Phototriac Output
  637. K3011PG Vishay - Optocoupler with Phototriac Output
  638. K3012 Vishay - Optocoupler with Phototriac Output
  639. K3012P Vishay - Optocoupler with Phototriac Output
  640. K3012PG Vishay - Optocoupler with Phototriac Output
  641. K302 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  642. K3020P Vishay - Optocoupler With Phototriac Output
  643. K3020PG Vishay - Optocoupler with Phototriac Output
  644. K3021P Vishay - Optocoupler with Phototriac Output
  645. K3021PG Vishay - Optocoupler with Phototriac Output
  646. K3022P Vishay - Optocoupler with Phototriac Output
  647. K3022PG Vishay - Optocoupler with Phototriac Output
  648. K3023P Vishay - Optocoupler with Phototriac Output
  649. K3023PG Vishay - Optocoupler with Phototriac Output
  650. K304 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  651. K3100G MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic...
  652. K3296 NEC - MOS FIELD EFFECT TRANSISTOR
  653. K330 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  654. K3390S1724 Carlo Gavazzi - Accessories
  655. K34100B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  656. K34100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  657. K34100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  658. K34100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  659. K34100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  660. K34100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  661. K34100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  662. K34100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  663. K34100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  664. K34100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  665. K34100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  666. K34100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  667. K34100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  668. K34100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  669. K34100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  670. K34100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  671. K34100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  672. K34100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  673. K34100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  674. K34100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  675. K34100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  676. K34100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  677. K34100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  678. K34100Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  679. K34100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  680. K34100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  681. K34120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  682. K34120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  683. K34120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  684. K34120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  685. K34120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  686. K34120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  687. K34120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  688. K34120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  689. K34120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  690. K34120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  691. K34120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  692. K34120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  693. K34120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  694. K34120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  695. K34120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  696. K34120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  697. K34120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  698. K34120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  699. K34120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  700. K34120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  701. K34120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  702. K34120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  703. K34120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  704. K34120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  705. K34120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  706. K34120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  707. K3413-01 Hamamatsu - Two-color detector
  708. K3413-02 Hamamatsu - Two-color detector
  709. K3413-05 Hamamatsu - Two-color Detector
  710. K3413-08 Hamamatsu - Two-color detector
  711. K3413-09 Hamamatsu - Two-color detector
  712. K34160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  713. K34160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  714. K34160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  715. K34160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  716. K34160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  717. K34160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  718. K34160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  719. K34160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  720. K34160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  721. K34160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  722. K34160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  723. K34160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  724. K34160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  725. K34160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  726. K34160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  727. K34160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  728. K34160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  729. K34160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  730. K34160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  731. K34160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  732. K34160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  733. K34160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  734. K34160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  735. K34160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  736. K34160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  737. K34160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  738. K3420B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  739. K3420B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  740. K3420B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  741. K3420C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  742. K3420C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  743. K3420D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  744. K3420D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  745. K3420H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  746. K3420H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  747. K3420M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  748. K3420M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  749. K3420N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  750. K3420N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  751. K3420Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  752. K3420Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  753. K3420V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  754. K3420V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  755. K3420W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  756. K3420W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  757. K3420X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  758. K3420X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  759. K3420Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  760. K3420Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  761. K3420Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  762. K3420Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  763. K3420Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  764. K3440B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  765. K3440B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  766. K3440B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  767. K3440C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  768. K3440C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  769. K3440D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  770. K3440D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  771. K3440H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  772. K3440H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  773. K3440M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  774. K3440M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  775. K3440N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  776. K3440N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  777. K3440Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  778. K3440Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  779. K3440V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  780. K3440V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  781. K3440W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  782. K3440W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  783. K3440X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  784. K3440X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  785. K3440Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  786. K3440Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  787. K3440Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  788. K3440Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  789. K3440Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  790. K3460B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  791. K3460B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  792. K3460B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  793. K3460C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  794. K3460C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  795. K3460D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  796. K3460D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  797. K3460H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  798. K3460H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  799. K3460M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  800. K3460M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  801. K3460N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  802. K3460N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  803. K3460Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  804. K3460Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  805. K3460V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  806. K3460V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  807. K3460W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  808. K3460W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  809. K3460X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  810. K3460X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  811. K3460Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  812. K3460Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  813. K3460Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  814. K3460Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  815. K3460Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  816. K3480B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  817. K3480B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  818. K3480B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  819. K3480C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  820. K3480C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  821. K3480D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  822. K3480D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  823. K3480H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  824. K3480H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  825. K3480M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  826. K3480M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  827. K3480N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  828. K3480N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  829. K3480Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  830. K3480Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  831. K3480V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  832. K3480V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  833. K3480W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  834. K3480W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  835. K3480X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  836. K3480X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  837. K3480Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  838. K3480Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  839. K3480Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  840. K3480Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  841. K3480Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  842. K3500G MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic =...
  843. K360 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  844. K3610 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  845. K3611 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  846. K3620 Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  847. K3621 Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  848. K3630 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  849. K3631 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  850. K3640 Kodenshi - Photocoupler(these Photocouplers Cosist Of Two Gallium Arsenide Infrared Emitting)
  851. K3641 Kodenshi - Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting)
  852. K37100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  853. K37100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  854. K37100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  855. K37100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  856. K37100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  857. K37100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  858. K37100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  859. K37100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  860. K37100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  861. K37100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  862. K37100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  863. K37100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  864. K37100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  865. K37100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  866. K37100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  867. K37100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  868. K37100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  869. K37100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  870. K37100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  871. K37100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  872. K37100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  873. K37100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  874. K37100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  875. K37100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  876. K37120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  877. K37120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  878. K37120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  879. K37120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  880. K37120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  881. K37120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  882. K37120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  883. K37120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  884. K37120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  885. K37120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  886. K37120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  887. K37120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  888. K37120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  889. K37120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  890. K37120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  891. K37120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  892. K37120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  893. K37120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  894. K37120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  895. K37120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  896. K37120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  897. K37120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  898. K37120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  899. K37120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  900. K37160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  901. K37160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  902. K37160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  903. K37160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  904. K37160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  905. K37160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  906. K37160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  907. K37160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  908. K37160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  909. K37160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  910. K37160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  911. K37160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  912. K37160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  913. K37160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  914. K37160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  915. K37160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  916. K37160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  917. K37160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  918. K37160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  919. K37160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  920. K37160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  921. K37160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  922. K37160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  923. K37160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  924. K3720B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  925. K3720B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  926. K3720C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  927. K3720C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  928. K3720D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  929. K3720D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  930. K3720H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  931. K3720H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  932. K3720M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  933. K3720M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  934. K3720N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  935. K3720N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  936. K3720Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  937. K3720Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  938. K3720V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  939. K3720V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  940. K3720W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  941. K3720W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  942. K3720X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  943. K3720X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  944. K3720Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  945. K3720Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  946. K3720Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  947. K3720Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  948. K3740B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  949. K3740B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  950. K3740C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  951. K3740C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  952. K3740D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  953. K3740D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  954. K3740H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  955. K3740H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  956. K3740M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  957. K3740M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  958. K3740N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  959. K3740N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  960. K3740Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  961. K3740Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  962. K3740V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  963. K3740V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  964. K3740W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  965. K3740W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  966. K3740X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  967. K3740X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  968. K3740Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  969. K3740Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  970. K3740Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  971. K3740Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  972. K3760B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  973. K3760B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  974. K3760C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  975. K3760C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  976. K3760D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  977. K3760D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  978. K3760H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  979. K3760H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  980. K3760M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  981. K3760M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  982. K3760N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  983. K3760N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  984. K3760Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  985. K3760Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  986. K3760V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  987. K3760V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  988. K3760W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  989. K3760W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  990. K3760X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  991. K3760X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  992. K3760Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  993. K3760Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  994. K3760Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  995. K3760Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  996. K3780B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  997. K3780B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  998. K3780C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  999. K3780C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1000. K3780D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1001. K3780D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1002. K3780H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1003. K3780H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1004. K3780M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1005. K3780M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1006. K3780N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1007. K3780N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1008. K3780Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1009. K3780Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1010. K3780V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1011. K3780V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1012. K3780W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1013. K3780W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1014. K3780X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1015. K3780X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1016. K3780Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1017. K3780Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1018. K3780Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1019. K3780Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1020. K390 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  1021. K3-ERASM Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  1022. K3-GALI_GVA+ Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  1023. K3-GAT+ Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  1024. K3-LFCN+ Mini-Circuits - KIT FILTER / SURF MT/T&R/ RoHS
  1025. K3N3C1000D Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1026. K3N3C1000D-DC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1027. K3N3C1000D-DGC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1028. K3N3C1000D-GC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1029. K3N3C1000D-TCE Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1030. K3N3C3000D Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1031. K3N3C3000D-DGC Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1032. K3N3C3000D-GC Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1033. K3N3C3000D-YCE Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1034. K3N3C6000D Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1035. K3N3C6000D-DC Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1036. K3N3C6000D-DC08 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1037. K3N3C6000D-DC10 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1038. K3N3C6000D-DC12 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  1039. K3N3U1000D Samsung - K3N3U1000D,K3N3V1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1040. K3N3U3000D Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1041. K3N3U3000D-AC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1042. K3N3U3000D-AE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1043. K3N3U3000D-DC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1044. K3N3U3000D-YC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1045. K3N3U3000D-YE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1046. K3N3V1000D Samsung - K3N3U1000D, K3N3V1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1047. K3N3V3000D Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1048. K3N3V3000D-AC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1049. K3N3V3000D-AE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1050. K3N3V3000D-GC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1051. K3N3V3000D-YC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1052. K3N3V3000D-YE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1053. K3N3V6000D Samsung - K3N3V6000D 4M-Bit (256K X 16) CMOS Mask ROM(ePROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 40DIP ; Current (mA/uA) = 20,25/30 ; Production Status = Eol ; Comments = EPROM Type
  1054. K3N4C1000D Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1055. K3N4C1000D-DC Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1056. K3N4C1000D-DG Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1057. K3N4C1000D-TC Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1058. K3N4C1000D-TCE Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1059. K3N4C1000D-TE Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1060. K3N4C1000E Samsung - K3N4C1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  1061. K3N4C3000D Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1062. K3N4C3000D-DC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1063. K3N4C3000D-DGC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1064. K3N4C3000D-GC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1065. K3N4U1000D Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1066. K3N4U1000D-DGC Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1067. K3N4U1000D-TCE Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1068. K3N4U3000D Samsung - K3N4U3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1069. K3N4U3000D-DGC Samsung - K3N4U3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1070. K3N4V1000D Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1071. K3N4V1000D-DGC Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1072. K3N4V1000D-TCE Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1073. K3N4V1000E Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1074. K3N4V1000E-DC10 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1075. K3N4V1000E-DC12 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1076. K3N4V1000E-GC10 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1077. K3N4V1000E-GC12 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1078. K3N4V3000D Samsung - K3N4V3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1079. K3N4V3000D-DGC Samsung - K3N4V3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1080. K3N5C1000D Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1081. K3N5C1000D-DC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1082. K3N5C1000D-DGC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1083. K3N5C1000D-GC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1084. K3N5C1000E Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1085. K3N5C1000E-TC Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1086. K3N5C1000E-TC10 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1087. K3N5C1000E-TC12 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1088. K3N5C1000E-TC15 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1089. K3N5U1000D Samsung - K3N5U1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1090. K3N5U1000E Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1091. K3N5U1000E-DC12 Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1092. K3N5U1000E-GC12 Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1093. K3N5U1000F Samsung - K3N5U1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1094. K3N5V1000D Samsung - K3N5V1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1095. K3N5V1000E Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1096. K3N5V1000E-DC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1097. K3N5V1000E-DC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1098. K3N5V1000E-GC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1099. K3N5V1000E-GC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1100. K3N5V1000F Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1101. K3N5V1000F-DC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1102. K3N5V1000F-DC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1103. K3N5V1000F-GC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1104. K3N5V1000F-GC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1105. K3N6C1000C Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1106. K3N6C1000C-GC Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1107. K3N6C1000C-TC Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1108. K3N6C1000C-TCE Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1109. K3N6C1000C-TE Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1110. K3N6C1000E Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1111. K3N6C1000E-TC Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1112. K3N6C1000E-TC10 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1113. K3N6C1000E-TC12 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1114. K3N6C1000E-TC15 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1115. K3N6C1000F Samsung - K3N6C1000F 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  1116. K3N6C1000F-C Samsung - K3N6C1000F 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  1117. K3N6C3000C Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1118. K3N6C3000C-DC Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1119. K3N6C3000C-DC10 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1120. K3N6C3000C-DC12 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1121. K3N6C3000C-DC15 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1122. K3N6C3000E Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1123. K3N6C3000E-DC Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1124. K3N6C3000E-DC10 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1125. K3N6C3000E-DC12 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1126. K3N6C3000E-DC15 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1127. K3N6C4000C Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1128. K3N6C4000C-DC Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1129. K3N6C4000C-DC10 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1130. K3N6C4000C-DC12 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1131. K3N6C4000C-DC15 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1132. K3N6C4000E Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1133. K3N6C4000E-DC Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1134. K3N6C4000E-DC10 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1135. K3N6C4000E-DC12 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1136. K3N6C4000E-DC15 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1137. K3N6S1000D Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1138. K3N6S1000D-YC Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1139. K3N6S1000D-YCE Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1140. K3N6S1000D-YE Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1141. K3N6U1000C Samsung - K3N6U1000C / K3N6V1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8/2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1142. K3N6U1000D Samsung - K3N6U1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1143. K3N6U1000E Samsung - K3N6U1000E 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1144. K3N6U1000E-GC12 Samsung - K3N6U1000E 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1145. K3N6U1000F Samsung - K3N6U1000F / K3N6V1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1146. K3N6U4000C Samsung - K3N6U4000C / K3N6V4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 150 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1147. K3N6U4000E Samsung - K3N6U4000E / K3N6V4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1148. K3N6U4000E-DC12 Samsung - K3N6U4000E / K3N6V4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1149. K3N6V1000C Samsung - K3N6V1000C / K3N6U1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8/2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 10(50pF) ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1150. K3N6V1000D Samsung - K3N6V1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1151. K3N6V1000E Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1152. K3N6V1000E-GC10 Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1153. K3N6V1000E-GC12 Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1154. K3N6V1000F Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1155. K3N6V1000F-GC10 Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1156. K3N6V1000F-GC12 Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1157. K3N6V4000C Samsung - K3N6V4000C / K3N6U4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1158. K3N6V4000E Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1159. K3N6V4000E-DC10 Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1160. K3N6V4000E-DC12 Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1161. K3N7C1000B Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1162. K3N7C1000B-GC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1163. K3N7C1000B-TC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1164. K3N7C1000B-YC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1165. K3N7C1000B-YC10 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1166. K3N7C1000B-YC12 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1167. K3N7C1000B-YC15 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1168. K3N7C1000C Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1169. K3N7C1000C-GC Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1170. K3N7C1000C-GC10 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1171. K3N7C1000C-GC12 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1172. K3N7C1000C-GC15 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1173. K3N7C1000M Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1174. K3N7C1000M-GC Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1175. K3N7C1000M-TC Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1176. K3N7C1000M-TC12 Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1177. K3N7C1000M-TC15 Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1178. K3N7C3000M Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1179. K3N7C3000M-DC Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1180. K3N7C3000M-DC12 Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1181. K3N7C3000M-DC15 Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1182. K3N7C4000B Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1183. K3N7C4000B-DC Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1184. K3N7C4000B-DC10 Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1185. K3N7C4000B-DC12 Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1186. K3N7C4000C Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1187. K3N7C4000C-DC Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1188. K3N7C4000C-DC10 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1189. K3N7C4000C-DC12 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1190. K3N7C4000C-DC15 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1191. K3N7C4000M Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1192. K3N7C4000M-DC Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1193. K3N7C4000M-DC12 Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1194. K3N7C4000M-DC15 Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1195. K3N7U1000A Samsung - K3N7U1000A 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1196. K3N7U1000B Samsung - K3N7U1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1197. K3N7U1000B-YC12 Samsung - K3N7U1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1198. K3N7U1000C Samsung - K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1199. K3N7U1000C-GC12 Samsung - K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1200. K3N7U4000B Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1201. K3N7U4000B-DC Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1202. K3N7U4000B-DC12 Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1203. K3N7U4000C Samsung - K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1204. K3N7U4000C-DC12 Samsung - K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1205. K3N7V1000A Samsung - K3N7V1000A 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1206. K3N7V1000B Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1207. K3N7V1000B-YC10 Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1208. K3N7V1000B-YC12 Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1209. K3N7V1000C Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1210. K3N7V1000C-GC10 Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1211. K3N7V1000C-GC12 Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1212. K3N7V4000B Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1213. K3N7V4000B-DC Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1214. K3N7V4000B-DC10 Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1215. K3N7V4000B-DC12 Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1216. K3N7V4000C Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1217. K3N7V4000C-DC10 Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1218. K3N7V4000C-DC12 Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1219. K3N9U1000A Samsung - K3N9U1000A 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1220. K3N9U1000A-YC12 Samsung - K3N9U1000A 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1221. K3N9U1000M Samsung - K3N9U1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48 TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1222. K3N9U4000A Samsung - K3N9U4000A 128M-Bit (8M X 16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1223. K3N9U4000A-GC12 Samsung - K3N9U4000A 128M-Bit (8M X 16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1224. K3N9V1000A Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1225. K3N9V1000A-YC10 Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1226. K3N9V1000A-YC12 Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1227. K3N9V1000M Samsung - K3N9V1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1228. K3N9V1000M-YCK3N9U1000M-YC Samsung - K3N9V1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1229. K3N9V4000A Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1230. K3N9V4000A-GC10 Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1231. K3N9V4000A-GC12 Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1232. K3NR Неопределенные - High-speed, Intelligent Interface Modules
  1233. K3NR-NB1A Неопределенные - High-speed, Intelligent Interface Modules
  1234. K3NR-NB1C Неопределенные - High-speed, Intelligent Interface Modules
  1235. K3NR-NB2A Неопределенные - High-speed, Intelligent Interface Modules
  1236. K3NR-NB2C Неопределенные - High-speed, Intelligent Interface Modules
  1237. K3NR-PB1A Неопределенные - High-speed, Intelligent Interface Modules
  1238. K3NR-PB1C Неопределенные - High-speed, Intelligent Interface Modules
  1239. K3NR-PB2A Неопределенные - High-speed, Intelligent Interface Modules
  1240. K3NR-PB2C Неопределенные - High-speed, Intelligent Interface Modules
  1241. K3P4C1000D Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1242. K3P4C1000D-DGC Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1243. K3P4C1000D-TC Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1244. K3P4C1000D-TCE Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1245. K3P4C1000D-TE Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1246. K3P4C1000E Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1247. K3P4C1000E-DC Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1248. K3P4C1000E-DC10 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1249. K3P4C1000E-DC12 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1250. K3P4C1000E-DC15 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1251. K3P4C1000E-GC Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1252. K3P4C1000E-GC10 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1253. K3P4C1000E-GC12 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1254. K3P4C1000E-GC15 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1255. K3P4U1000D Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1256. K3P4U1000D-DC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1257. K3P4U1000D-GC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1258. K3P4U1000D-TC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1259. K3P4U1000D-TE Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1260. K3P4V1000D Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1261. K3P4V1000D-DC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1262. K3P4V1000D-GC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1263. K3P4V1000D-TC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1264. K3P4V1000D-TE Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1265. K3P4V1000E Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1266. K3P4V1000E-DC10 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1267. K3P4V1000E-DC12 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1268. K3P4V1000E-GC10 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1269. K3P4V1000E-GC12 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1270. K3P5C1000D Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1271. K3P5C1000D-DGC Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1272. K3P5C1000D-TC Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1273. K3P5C1000D-TC10 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1274. K3P5C1000D-TC12 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1275. K3P5C1000D-TC15 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1276. K3P5C1000F Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1277. K3P5C1000F-DC Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1278. K3P5C1000F-DC10 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1279. K3P5C1000F-DC12 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1280. K3P5C1000F-DC15 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1281. K3P5C1000F-GC Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1282. K3P5C1000F-GC10 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1283. K3P5C1000F-GC12 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1284. K3P5C1000F-GC15 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1285. K3P5C2000D Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1286. K3P5C2000D-SC Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1287. K3P5C2000D-SC10 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1288. K3P5C2000D-SC12 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1289. K3P5C2000D-SC15 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1290. K3P5U1000D Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1291. K3P5U1000D-DC Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1292. K3P5U1000D-GC Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1293. K3P5U1000F Samsung - K3P5U1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1294. K3P5U1000F-TC12 Samsung - K3P5U1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1295. K3P5U2000D Samsung - K3P5U2000D / K3P5V2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 3.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1296. K3P5V1000D Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1297. K3P5V1000D-DC Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1298. K3P5V1000D-GC Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1299. K3P5V1000F Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1300. K3P5V1000F-TC10 Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1301. K3P5V1000F-TC12 Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1302. K3P5V2000D Samsung - K3P5V2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1303. K3P6C1000B Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1304. K3P6C1000B-GC Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1305. K3P6C1000B-TC Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1306. K3P6C1000B-TC10 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1307. K3P6C1000B-TC12 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1308. K3P6C1000B-TC15 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1309. K3P6C1000F Samsung - K3P6C1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = -
  1310. K3P6C1000F-GC Samsung - K3P6C1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = -
  1311. K3P6C2000B Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1312. K3P6C2000B-SC Samsung - 32m-bit (2mx16 /1mx32) Cmos Mask Rom
  1313. K3P6C2000B-SC10 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1314. K3P6C2000B-SC12 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1315. K3P6C2000B-SC15 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1316. K3P6S1000D Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1317. K3P6S1000D-YC Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1318. K3P6S1000D-YCE Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1319. K3P6S1000D-YE Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1320. K3P6U1000D Samsung - K3P6U1000D 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1321. K3P6U1000F Samsung - K3P6U1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = -
  1322. K3P6V1000B Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1323. K3P6V1000B-GC Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1324. K3P6V1000B-TC Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1325. K3P6V1000B-TCE Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1326. K3P6V1000D Samsung - K3P6V1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1327. K3P6V1000F Samsung - K3P6V1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = -
  1328. K3P6V2000B Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1329. K3P6V2000B-SC Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1330. K3P6V2000B-SC10 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1331. K3P6V2000B-SC12 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1332. K3P6V2000B-SC15 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1333. K3P7C1000B Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1334. K3P7C1000B-GC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1335. K3P7C1000B-TC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1336. K3P7C1000B-YC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1337. K3P7C1000B-YC10 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1338. K3P7C1000B-YC12 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1339. K3P7C1000B-YC15 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1340. K3P7U1000A Samsung - K3P7U1000A 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40),100(30) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1341. K3P7U1000B Samsung - K3P7U1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1342. K3P7U1000B-YC12 Samsung - K3P7U1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1343. K3P7U2000A Samsung - K3P7U2000A 64M-Bit(4Mx16/2Mx32) CMOS Mask ROM ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1344. K3P7V1000 Samsung - 64m-bit (8mx8 /4mx16) Cmos Mask Rom
  1345. K3P7V1000A Samsung - K3P7V1000A 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1346. K3P7V1000B Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1347. K3P7V1000B-YC Samsung - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
  1348. K3P7V1000B-YC10 Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1349. K3P7V1000B-YC12 Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1350. K3P7V2000A Samsung - K3P7V2000A 64M-Bit(4Mx16,2Mx32) CMOS Mask ROM ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1351. K3P7VU1000B-YC Samsung - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
  1352. K3P9U1000A Samsung - K3P9U1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1353. K3P9U1000A-YC12 Samsung - K3P9U1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1354. K3P9U1000M Samsung - K3P9U1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1355. K3P9U1000M-YC Samsung - K3P9U1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1356. K3P9U2000M Samsung - K3P9U2000M 128M-Bit (8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1357. K3P9U2000M-SC Samsung - K3P9U2000M 128M-Bit (8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1358. K3P9U4000A Samsung - K3P9U4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1359. K3P9U4000A-GC12 Samsung - K3P9U4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1360. K3P9V1000A Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1361. K3P9V1000A-YC10 Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1362. K3P9V1000A-YC12 Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1363. K3P9V1000M Samsung - K3P9V1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1364. K3P9V1000M-YC Samsung - K3P9V1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1365. K3P9V2000M Samsung - K3P9V2000M 128M-Bit(8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1366. K3P9V2000M-SC Samsung - K3P9V2000M 128M-Bit(8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1367. K3P9V4000A Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1368. K3P9V4000A-GC10 Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1369. K3P9V4000A-GC12 Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1370. K3S6V2000M Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1371. K3S6V2000M-TC Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1372. K3S6V2000M-TC15 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1373. K3S6V2000M-TC20 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1374. K3S6V2000M-TC30 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1375. K3S7V2000M Samsung - K3S7V2000M 2M X 32 Synchronous Maskrom ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.3 ; Speed(MHz) = 33,50,66,83,100 ; Package = 86TSOP2 ; Production Status = Mass Production ; Comments = -
  1376. K3S7V2000M-TC Samsung - 64m-bit (4mx16 /2mx32) Synchronous Maskrom
  1377. K3S7V2000M-TC10 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1378. K3S7V2000M-TC12 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1379. K3S7V2000M-TC15 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1380. K3S7V2000M-TC20 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1381. K3S7V2000M-TC30 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1382. K3-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  1383. K3-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  1384. K3-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  1385. K3X13AA Неопределенные - Sensor to Computer Interface Modules
  1386. K3X13AX Неопределенные - Sensor to Computer Interface Modules
  1387. K3X13HQ Неопределенные - Sensor to Computer Interface Modules
  1388. K3X13LT Неопределенные - Sensor to Computer Interface Modules
  1389. K4 Неопределенные - KS Series KEY SWITCHES
  1390. K401 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  1391. K402 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  1392. K4032 Неопределенные - Vestigial Sideband Filter (if= 38,0 Mhz, Standard D, Full Transmission)
  1393. K404 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  1394. K430 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  1395. K43100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1396. K43100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1397. K43100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1398. K43100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1399. K43100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1400. K43100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1401. K43100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1402. K43100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1403. K43100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1404. K43100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1405. K43100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1406. K43100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1407. K43100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1408. K43100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1409. K43100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1410. K43100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1411. K43100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1412. K43100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1413. K43100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1414. K43100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1415. K43100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1416. K43100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1417. K43100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1418. K43100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1419. K43120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1420. K43120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1421. K43120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1422. K43120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1423. K43120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1424. K43120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1425. K43120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1426. K43120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1427. K43120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1428. K43120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1429. K43120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1430. K43120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1431. K43120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1432. K43120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1433. K43120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1434. K43120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1435. K43120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1436. K43120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1437. K43120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1438. K43120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1439. K43120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1440. K43120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1441. K43120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1442. K43120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1443. K43160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1444. K43160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1445. K43160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1446. K43160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1447. K43160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1448. K43160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1449. K43160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1450. K43160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1451. K43160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1452. K43160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1453. K43160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1454. K43160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1455. K43160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1456. K43160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1457. K43160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1458. K43160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1459. K43160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1460. K43160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1461. K43160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1462. K43160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1463. K43160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1464. K43160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1465. K43160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1466. K43160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1467. K4320B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1468. K4320B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1469. K4320C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1470. K4320C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1471. K4320D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1472. K4320D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1473. K4320H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1474. K4320H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1475. K4320M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1476. K4320M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1477. K4320N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1478. K4320N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1479. K4320Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1480. K4320Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1481. K4320V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1482. K4320V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1483. K4320W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1484. K4320W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1485. K4320X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1486. K4320X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1487. K4320Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1488. K4320Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1489. K4320Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1490. K4320Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1491. K4340B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1492. K4340B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1493. K4340C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1494. K4340C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1495. K4340D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1496. K4340D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1497. K4340H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1498. K4340H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1499. K4340M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1500. K4340M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1501. K4340N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1502. K4340N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1503. K4340Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1504. K4340Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1505. K4340V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1506. K4340V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1507. K4340W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1508. K4340W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1509. K4340X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1510. K4340X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1511. K4340Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1512. K4340Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1513. K4340Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1514. K4340Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1515. K4360B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1516. K4360B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1517. K4360C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1518. K4360C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1519. K4360D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1520. K4360D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1521. K4360H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1522. K4360H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1523. K4360M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1524. K4360M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1525. K4360N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1526. K4360N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1527. K4360Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1528. K4360Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1529. K4360V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1530. K4360V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1531. K4360W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1532. K4360W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1533. K4360X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1534. K4360X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1535. K4360Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1536. K4360Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1537. K4360Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1538. K4360Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1539. K4380B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1540. K4380B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1541. K4380C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1542. K4380C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1543. K4380D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1544. K4380D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1545. K4380H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1546. K4380H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1547. K4380M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1548. K4380M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1549. K4380N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1550. K4380N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1551. K4380Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1552. K4380Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1553. K4380V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1554. K4380V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1555. K4380W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1556. K4380W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1557. K4380X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1558. K4380X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1559. K4380Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1560. K4380Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1561. K4380Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1562. K4380Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1563. K470 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  1564. K4C560838C Samsung - K4C560838C 256Mb Network-dram ; Organization = 32Mx8 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  1565. K4C560838C-TC Samsung - K4C560838C 256Mb Network-dram ; Organization = 32Mx8 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  1566. K4C560838C-TCD3 Samsung - 256mb Network-dram
  1567. K4C560838C-TCD4 Samsung - 256Mb Network-DRAM
  1568. K4C560838C-TCDA Samsung - 256Mb Network-DRAM
  1569. K4C561638C Samsung - K4C561638C 256Mb Network-dram ; Organization = 16Mx16 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  1570. K4C561638C-TC Samsung - K4C561638C 256Mb Network-dram ; Organization = 16Mx16 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  1571. K4C561638C-TCD3 Samsung - 256Mb Network-DRAM
  1572. K4C561638C-TCD4 Samsung - 256Mb Network-DRAM
  1573. K4C561638C-TCD4000 Samsung - 256Mb Network-DRAM
  1574. K4C561638C-TCDA Samsung - 256Mb Network-DRAM
  1575. K4C89083AF-ACF5 Samsung - 288mb X18 Network-dram2 Specification
  1576. K4C89083AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1577. K4C89083AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1578. K4C89083AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1579. K4C89083AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1580. K4C89083AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1581. K4C89083AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1582. K4C89083AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1583. K4C89083AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1584. K4C89083AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1585. K4C89083AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1586. K4C89083AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1587. K4C89093AF Samsung - K4C89093AF 8,388,608-WORDS X 4 Banks X 9-BITS Double Data Rate Network-dram ; Organization = 32Mx9 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 60FBGA ; Production Status = Engineering Sample:Q4\'2003 ; Comments = Target Spec
  1588. K4C89093AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1589. K4C89093AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1590. K4C89093AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1591. K4C89093AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1592. K4C89093AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1593. K4C89093AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1594. K4C89093AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1595. K4C89093AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1596. K4C89093AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1597. K4C89093AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1598. K4C89093AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1599. K4C89093AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1600. K4C89163AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1601. K4C89163AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1602. K4C89163AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1603. K4C89163AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1604. K4C89163AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1605. K4C89163AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1606. K4C89163AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1607. K4C89163AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1608. K4C89163AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1609. K4C89163AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1610. K4C89163AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1611. K4C89163AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1612. K4C89183AF Samsung - 288Mb x18 Network-DRAM2 Specification
  1613. K4C89183AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1614. K4C89183AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1615. K4C89183AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1616. K4C89183AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1617. K4C89183AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1618. K4C89183AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1619. K4C89183AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1620. K4C89183AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1621. K4C89183AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1622. K4C89183AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  1623. K4C89183AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  1624. K4C89183AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  1625. K4C89363AF Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  1626. K4C89363AF-GCF5 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  1627. K4C89363AF-GCF6 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  1628. K4C89363AF-GCFB Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  1629. K4C89363AF-GIF5 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  1630. K4D261638 Samsung - 128mbit Gddr Sdram
  1631. K4D261638E Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1632. K4D261638E-TC2A Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1633. K4D261638E-TC33 Samsung - 2m X 16bit X 4 Banks Double Data Rate Synchronous Dram
  1634. K4D261638E-TC36 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1635. K4D261638E-TC40 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1636. K4D261638E-TC50 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1637. K4D261638F Samsung - 128Mbit GDDR SDRAM
  1638. K4D261638F-TC25 Samsung - 128Mbit GDDR SDRAM
  1639. K4D261638F-TC2A Samsung - 128Mbit GDDR SDRAM
  1640. K4D261638F-TC33 Samsung - 128Mbit GDDR SDRAM
  1641. K4D261638F-TC36 Samsung - 128Mbit GDDR SDRAM
  1642. K4D261638F-TC40 Samsung - 128Mbit GDDR SDRAM
  1643. K4D261638F-TC50 Samsung - 128Mbit GDDR SDRAM
  1644. K4D263238A Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1645. K4D263238A-GC Samsung - K4D263238A 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 3.3,3.6,4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1646. K4D263238A-GC33 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1647. K4D263238A-GC36 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  1648. K4D263238A-GC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1649. K4D263238A-GC45 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1650. K4D263238A-GC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1651. K4D263238D Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1652. K4D263238D-QC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1653. K4D263238D-QC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1654. K4D263238E Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1655. K4D263238E-GC Samsung - K4D263238E-GC 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8,2.375~2.94 ; Speed(ns) = 2.5,2A,3.3,3.6,4.0,4.5 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1656. K4D263238E-GC25 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1657. K4D263238E-GC2A Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1658. K4D263238E-GC33 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1659. K4D263238E-GC36 Samsung - 1m X 32bit X 4 Banks Graphic Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  1660. K4D263238E-GC40 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1661. K4D263238E-GC45 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1662. K4D263238F Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1663. K4D263238F-QC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  1664. K4D263238F-QC50 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  1665. K4D263238G-GC Samsung - 128Mbit GDDR SDRAM
  1666. K4D263238G-GC2A Samsung - 128Mbit GDDR SDRAM
  1667. K4D263238G-GC33 Samsung - 128Mbit GDDR SDRAM
  1668. K4D263238G-GC36 Samsung - 128Mbit GDDR SDRAM
  1669. K4D263238G-VC Samsung - 128mbit Gddr Sdram
  1670. K4D263238M Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1671. K4D263238M-QC45 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1672. K4D263238M-QC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1673. K4D263238M-QC55 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1674. K4D263238M-QC60 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe and Dll
  1675. K4D26323AA Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1676. K4D26323AA-GL Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1677. K4D26323AA-GL40 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1678. K4D26323AA-GL45 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1679. K4D26323AA-GL50 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  1680. K4D26323QG Samsung - 128Mbit GDDR SDRAM
  1681. K4D26323QG-GC25 Samsung - 128mbit Gddr Sdram
  1682. K4D26323QG-GC2A Samsung - 128Mbit GDDR SDRAM
  1683. K4D26323QG-GC33 Samsung - 128Mbit GDDR SDRAM
  1684. K4D26323RA Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe and Dll
  1685. K4D26323RA-GC Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1686. K4D26323RA-GC2A Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1687. K4D26323RA-GC33 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1688. K4D26323RA-GC36 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  1689. K4D28163HD Samsung - 128mbit Ddr Sdram
  1690. K4D28163HD-TC36 Samsung - 128Mbit DDR SDRAM
  1691. K4D28163HD-TC40 Samsung - 128Mbit DDR SDRAM
  1692. K4D28163HD-TC50 Samsung - 128Mbit DDR SDRAM
  1693. K4D28163HD-TC60 Samsung - 128Mbit DDR SDRAM
  1694. K4D551638D Samsung - 256mbit Gddr Sdram
  1695. K4D551638D-TC Samsung - 256Mbit GDDR SDRAM
  1696. K4D551638D-TC2A Samsung - 256Mbit GDDR SDRAM
  1697. K4D551638D-TC33 Samsung - 256Mbit GDDR SDRAM
  1698. K4D551638D-TC36 Samsung - 256Mbit GDDR SDRAM
  1699. K4D551638D-TC40 Samsung - 256Mbit GDDR SDRAM
  1700. K4D551638D-TC45 Samsung - 256Mbit GDDR SDRAM
  1701. K4D551638D-TC50 Samsung - 256Mbit GDDR SDRAM
  1702. K4D551638D-TC60 Samsung - 256Mbit GDDR SDRAM
  1703. K4D551638F-TC Samsung - 256Mbit GDDR SDRAM
  1704. K4D551638F-TC33 Samsung - 256Mbit GDDR SDRAM
  1705. K4D551638F-TC36 Samsung - 256Mbit GDDR SDRAM
  1706. K4D551638F-TC40 Samsung - 256mbit Gddr Sdram
  1707. K4D551638F-TC50 Samsung - 256Mbit GDDR SDRAM
  1708. K4D551638F-TC60 Samsung - 256Mbit GDDR SDRAM
  1709. K4D553235F-GC Samsung - 256M GDDR SDRAM
  1710. K4D553235F-GC25 Samsung - 256M GDDR SDRAM
  1711. K4D553235F-GC2A Samsung - 256m Gddr Sdram
  1712. K4D553235F-GC33 Samsung - 256M GDDR SDRAM
  1713. K4D553238E Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1714. K4D553238E-JC Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1715. K4D553238E-JC33 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1716. K4D553238E-JC36 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1717. K4D553238E-JC40 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1718. K4D553238E-JC50 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  1719. K4D553238F Samsung - 256mbit Gddr Sdram
  1720. K4D553238F-GC Samsung - 256Mbit GDDR SDRAM
  1721. K4D553238F-GC2A Samsung - 256Mbit GDDR SDRAM
  1722. K4D553238F-GC33 Samsung - 256Mbit GDDR SDRAM
  1723. K4D553238F-GC36 Samsung - 256Mbit GDDR SDRAM
  1724. K4D553238F-JC Samsung - 256Mbit GDDR SDRAM
  1725. K4D553238F-JC2A Samsung - 256Mbit GDDR SDRAM
  1726. K4D553238F-JC33 Samsung - 256Mbit GDDR SDRAM
  1727. K4D553238F-JC36 Samsung - 256mbit Gddr Sdram
  1728. K4D553238F-JC40 Samsung - 256Mbit GDDR SDRAM
  1729. K4D553238F-JC50 Samsung - 256Mbit GDDR SDRAM
  1730. K4D623237A Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1731. K4D623237A-QC55 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1732. K4D623237A-QC60 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1733. K4D623237A-QC70 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1734. K4D623237M Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1735. K4D623237M-QC10 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1736. K4D623237M-QC60 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1737. K4D623237M-QC70 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1738. K4D623237M-QC80 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1739. K4D623238B Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1740. K4D623238B-GC Samsung - 64mbit Ddr Sdram
  1741. K4D623238B-GC33 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1742. K4D623238B-GC40 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1743. K4D623238B-GC45 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1744. K4D623238B-GC50 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1745. K4D623238B-GC55 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1746. K4D623238B-GC60 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1747. K4D623238B-GC/L33 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1748. K4D623238B-GC/L40 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1749. K4D623238B-GC/L45 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1750. K4D623238B-GC/L50 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1751. K4D623238B-GC/L55 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1752. K4D623238B-GC/L60 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  1753. K4D623238F Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  1754. K4D623238F-QC Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  1755. K4D623238F-QC40 Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  1756. K4D623238F-QC50 Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  1757. K4D62323HA Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1758. K4D62323HA-QC55 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1759. K4D62323HA-QC60 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1760. K4D62323HA-QC70 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  1761. K4D64163HE Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1762. K4D64163HE-TC40 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1763. K4D64163HE-TC45 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1764. K4D64163HE-TC50 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1765. K4D64163HE-TC55 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1766. K4D64163HE-TC60 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  1767. K4D64163HF Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1768. K4D64163HF-TC33 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1769. K4D64163HF-TC36 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1770. K4D64163HF-TC40 Samsung - 1m X 16bit X 4 Banks Double Data Rate Synchronous Dram
  1771. K4D64163HF-TC50 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1772. K4D64163HF-TC60 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  1773. K4-DBTC-75L+ Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  1774. K4E151611C Samsung - K4E640412B 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1775. K4E151611D Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1776. K4E151611D-J Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1777. K4E151611D-T Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1778. K4E151612C Samsung - K4E151612C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1779. K4E151612D Samsung - 1m X 16bit Cmos Dynamic Ram With Extended Data Out
  1780. K4E151612D-J Samsung - K4E151612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1781. K4E151612D-T Samsung - K4E151612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1782. K4E160411C Samsung - K4E170411C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1783. K4E160411D Samsung - 4m X 4bit Cmos Dynamic Ram With Extended Data Out
  1784. K4E160411D-B Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1785. K4E160411D-F Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1786. K4E160412C Samsung - K4E170412C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1787. K4E160412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1788. K4E160412D-B Samsung - K4E160412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1789. K4E160412D-F Samsung - K4E160412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1790. K4E160811C Samsung - K4E170811C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2-300 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1791. K4E160811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1792. K4E160811D-B Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1793. K4E160811D-F Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1794. K4E160812C Samsung - K4E170812C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1795. K4E160812D Samsung - 2m X 8bit Cmos Dynamic Ram With Extended Data Out
  1796. K4E160812D-B Samsung - K4E160812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1797. K4E160812D-F Samsung - K4E160812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1798. K4E170411C Samsung - K4E170411C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1799. K4E170411D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1800. K4E170411D-B Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1801. K4E170411D-F Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1802. K4E170412C Samsung - K4E170412C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1803. K4E170412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1804. K4E170412D-B Samsung - K4E170412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1805. K4E170412D-F Samsung - K4E170412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1806. K4E170811C Samsung - K4E170811C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2-300 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1807. K4E170811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1808. K4E170811D-B Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1809. K4E170811D-F Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1810. K4E170812C Samsung - K4E170812C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1811. K4E170812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1812. K4E170812D-B Samsung - K4E170812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1813. K4E170812D-F Samsung - K4E170812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1814. K4E171611C Samsung - K4E171611C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1815. K4E171611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
  1816. K4E171611D-J Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1817. K4E171611D-T Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1818. K4E171612C Samsung - K4E171612C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1819. K4E171612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
  1820. K4E171612D-J Samsung - K4E171612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1821. K4E171612D-T Samsung - K4E171612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1822. K4E640411B Samsung - K4E660411B 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1823. K4E640411C Samsung - K4E640411C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1824. K4E640411D Samsung - K4E640411D 16MB X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1825. K4E640411D-JC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1826. K4E640411D-JC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1827. K4E640411D-TC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1828. K4E640411D-TC60 Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1829. K4E640412B Samsung - M374F3200BJ1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*36+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1830. K4E640412C Samsung - K4E660412C 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1831. K4E640412D Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1832. K4E640412D-JC/L Samsung - M374F1600DJ1 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*18+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1833. K4E640412D-TC/L Samsung - M374F1600DJ1 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*18+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1834. K4E640412E Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1835. K4E640412E-JI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1836. K4E640412E-JI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1837. K4E640412E-JI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1838. K4E640412E-JP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1839. K4E640412E-JP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1840. K4E640412E-JP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1841. K4E640412E-TI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1842. K4E640412E-TI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1843. K4E640412E-TI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1844. K4E640412E-TP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1845. K4E640412E-TP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1846. K4E640412E-TP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1847. K4E640811B Samsung - K4E640811B 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1848. K4E640811C Samsung - K4E640811C 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1849. K4E640811D Samsung - K4E640811D 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1850. K4E640812B Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1851. K4E640812C Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1852. K4E640812D Samsung - M374F0803DJ1 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 64 ; Organization = 8Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (8Mx8)*9+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1853. K4E640812D-J Samsung - M374F0803DJ3 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode ; Density(MB) = 64 ; Organization = 8Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (8Mx8)*9+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1854. K4E640812E Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1855. K4E641611B Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1856. K4E641611B-45 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1857. K4E641611B-50 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1858. K4E641611B-60 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1859. K4E641611C Samsung - K4E641611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1860. K4E641611D Samsung - K4E641611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1861. K4E641612B Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1862. K4E641612B-L Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1863. K4E641612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1864. K4E641612C Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1865. K4E641612C-45 Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1866. K4E641612C-50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1867. K4E641612C-60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1868. K4E641612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1869. K4E641612C-T Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1870. K4E641612C-T45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1871. K4E641612C-T50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1872. K4E641612C-T60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1873. K4E641612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1874. K4E641612C-TC45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1875. K4E641612C-TC50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1876. K4E641612C-TC60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1877. K4E641612C-TL45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1878. K4E641612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1879. K4E641612C-TL60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1880. K4E641612D Samsung - Cmos Dram
  1881. K4E641612D-T Samsung - M366F0804DT1 8Mx64 DRAM Dimm Using 4Mx16,8K&4K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)*8+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1882. K4E641612E Samsung - K4E641612E 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1883. K4E6601611B Samsung - M364E0884BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x8+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1884. K4E660411B Samsung - M372E3280BJ0 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1885. K4E660411C Samsung - K4E660411C 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1886. K4E660411D Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1887. K4E660411D-JC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1888. K4E660411D-JC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1889. K4E660411D-TC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1890. K4E660411D-TC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1891. K4E660412B Samsung - K4E660412B 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1892. K4E660412C Samsung - M366F1680CJ2 16Mx64 DRAM Dimm Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*16+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1893. K4E660412C-J Samsung - M372F3280CJ4 32M X 72 DRAM Dimm With Ecc Using 16Mx4, 4K & 8K Refresh, 3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1894. K4E660412C-T Samsung - M372F3280CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1895. K4E660412D Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1896. K4E660412D-J Samsung - M372F3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1897. K4E660412D-JC/L Samsung - M372F3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1898. K4E660412D-T Samsung - M372F3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1899. K4E660412D-TC/L Samsung - M372F3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1900. K4E660412E Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1901. K4E660412E-JI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1902. K4E660412E-JI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1903. K4E660412E-JI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1904. K4E660412E-JP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1905. K4E660412E-JP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1906. K4E660412E-JP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1907. K4E660412E-T Samsung - M372F3280ET1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K ; Speed(ns) = C50,C60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+EEPROM ; Production Status = Eol ; Comments = -
  1908. K4E660412E-TI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1909. K4E660412E-TI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1910. K4E660412E-TI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1911. K4E660412E-TP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1912. K4E660412E-TP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1913. K4E660412E-TP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1914. K4E660811B Samsung - K4E660811B 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1915. K4E660811C Samsung - K4E660811C 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ-400A,32TSOP2-400B ; Power = Normal ; Production Status = Eol ; Comments = -
  1916. K4E660811D Samsung - K4E660811D 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1917. K4E660812B Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1918. K4E660812C Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1919. K4E660812D Samsung - K4E660812D ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1920. K4E660812E Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1921. K4E661611B Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1922. K4E661611B-45 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1923. K4E661611B-50 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1924. K4E661611B-60 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1925. K4E661611C Samsung - K4E661611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1926. K4E661611D Samsung - K4E661611D 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1927. K4E661611D-TC60 Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1928. K4E661612B Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1929. K4E661612B-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1930. K4E661612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1931. K4E661612C Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1932. K4E661612C-45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1933. K4E661612C-50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1934. K4E661612C-60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1935. K4E661612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1936. K4E661612C-L45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1937. K4E661612C-L50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1938. K4E661612C-L60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1939. K4E661612C-T Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1940. K4E661612C-T45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1941. K4E661612C-T50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1942. K4E661612C-T60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1943. K4E661612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1944. K4E661612C-TC45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1945. K4E661612C-TC50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1946. K4E661612C-TC60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1947. K4E661612C-TL45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1948. K4E661612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1949. K4E661612C-TL60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1950. K4E661612D Samsung - CMOS DRAM
  1951. K4E661612D-T Samsung - M366F0484DT1 4MBx64 DRAM Dimm Using 4MBx16,4KB&8KB Refresh 3.3V,EDO Mode Without Buffer ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50, 60 ; #of Pin = 168 ; Component Composition = (4Mx16)*4+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1952. K4E661612E Samsung - K4E661612E 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1953. K4F151611 Samsung - 1m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1954. K4F151611C Samsung - K4F171611C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1955. K4F151611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1956. K4F151611D-50 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1957. K4F151611D-60 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1958. K4F151611D-J Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1959. K4F151611D-T Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1960. K4F151612C Samsung - K4F151612C 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1961. K4F151612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1962. K4F151612D-50 Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1963. K4F151612D-60 Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1964. K4F151612D-J Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1965. K4F151612D-T Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1966. K4F160411C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1967. K4F160411C-B Samsung - 4m X 4bit Cmos Dynamic Ram With Fast Page Mode
  1968. K4F160411C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1969. K4F160411D Samsung - 4m X 4bit Cmos Dynamic Ram With Fast Page Mode
  1970. K4F160411D-B Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1971. K4F160411D-F Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1972. K4F160412C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1973. K4F160412C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1974. K4F160412C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1975. K4F160412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1976. K4F160412D-B Samsung - K4F160412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1977. K4F160412D-F Samsung - K4F160412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1978. K4F160811C Samsung - K4F170811C 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1979. K4F160811D Samsung - 2m X 8bit Cmos Dynamic Ram With Fast Page Mode
  1980. K4F160811D-B Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1981. K4F160811D-F Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1982. K4F160812C Samsung - K4F170812C 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1983. K4F160812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  1984. K4F160812D-B Samsung - K4F160812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1985. K4F160812D-F Samsung - K4F160812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1986. K4F170111C Samsung - K4F170111C 16Mx1Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx1 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1987. K4F170112C Samsung - K4F170112C 16Mx1Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx1 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1988. K4F170411C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1989. K4F170411C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1990. K4F170411C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1991. K4F170411D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1992. K4F170411D-B Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1993. K4F170411D-F Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1994. K4F170412C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1995. K4F170412C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1996. K4F170412C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1997. K4F170412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1998. K4F170412D-B Samsung - K4F170412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1999. K4F170412D-F Samsung - K4F170412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  2000. K4F170811C Samsung - K4F170811C 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2001. K4F170811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  2002. K4F170811D-B Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2003. K4F170811D-F Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2004. K4F170812C Samsung - K4F170812C 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2005. K4F170812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  2006. K4F170812D-B Samsung - K4F170812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2007. K4F170812D-F Samsung - K4F170812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2008. K4F171611C Samsung - K4F171611C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2009. K4F171611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  2010. K4F171611D-50 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  2011. K4F171611D-60 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  2012. K4F171611D-J Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  2013. K4F171611D-T Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  2014. K4F171612C Samsung - K4F171612C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2015. K4F171612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  2016. K4F171612D-50 Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  2017. K4F171612D-60 Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  2018. K4F171612D-J Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  2019. K4F171612D-T Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  2020. K4F640411B Samsung - K4F640411B 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2021. K4F640411C Samsung - K4F640411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2022. K4F640411D Samsung - K4F640411D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  2023. K4F640412B Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2024. K4F640412C Samsung - K4F640412C 16M X4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2025. K4F640412D Samsung - 16m X 4bit Cmos Dynamic Ram With Fast Page Mode
  2026. K4F640412D-JC/L Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  2027. K4F640412D-TC/L Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  2028. K4F640412E Samsung - K4F640412E 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  2029. K4F640811B Samsung - 8m X 8bit Cmos Dynamic Ram With Fast Page Mode
  2030. K4F640811C Samsung - K4F640412C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2031. K4F640811D Samsung - K4F640811D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  2032. K4F640812B Samsung - K4F640812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2033. K4F640812C Samsung - K4F640812C 8M X8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50, 60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Until Aug. 2000
  2034. K4F640812D Samsung - 8m X 8bit Cmos Dynamic Ram With Fast Page Mode
  2035. K4F640812D-JC/L Samsung - K4F640812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  2036. K4F640812D-TC/L Samsung - K4F640812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  2037. K4F641611B Samsung - K4F641611B 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2038. K4F641611C Samsung - K4F641611C 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2039. K4F641611D Samsung - K4F641611D 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  2040. K4F641612B Samsung - K4F641612B 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2041. K4F641612C Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  2042. K4F641612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2043. K4F641612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2044. K4F641612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2045. K4F641612D Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  2046. K4F641612D-TI Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  2047. K4F641612D-TP Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  2048. K4F641612E Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  2049. K4F660411B Samsung - M372C3280BJ0 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2050. K4F660411C Samsung - K4F660411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2051. K4F660411D Samsung - K4F660411D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  2052. K4F660412B Samsung - K4F660412B 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2053. K4F660412B-J Samsung - M372V3280CJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2054. K4F660412C Samsung - K4F660412C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = ,
  2055. K4F660412C-J Samsung - M372V3280CJ3 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2056. K4F660412C-T Samsung - M372V3280CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2057. K4F660412D Samsung - 16M x 4bit CMOS Dynamic RAM with Fast Page Mode
  2058. K4F660412D-J Samsung - M372V3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2059. K4F660412D-JC/L Samsung - M372V3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2060. K4F660412D-T Samsung - M372V3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2061. K4F660412D-TC/L Samsung - M372V3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2062. K4F660412E Samsung - K4F660412E 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  2063. K4F660811B Samsung - 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
  2064. K4F660811C Samsung - K4F660811C 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2065. K4F660811D Samsung - K4F660811D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  2066. K4F660812B Samsung - K4F660812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2067. K4F660812C Samsung - K4F660812C 8M X8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  2068. K4F660812D Samsung - 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
  2069. K4F660812D-JC/L Samsung - K4F660812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  2070. K4F660812D-TC/L Samsung - K4F660812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  2071. K4F660812E Samsung - K4F660812E 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  2072. K4F661611B Samsung - M364C0884BT0 Fast Page Mode:8Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x8+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  2073. K4F661611C Samsung - K4F661611C 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  2074. K4F661611D Samsung - K4F661611D 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  2075. K4F661612B Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  2076. K4F661612B-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2077. K4F661612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2078. K4F661612C Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2079. K4F661612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2080. K4F661612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2081. K4F661612D Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  2082. K4F661612D-TI Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  2083. K4F661612D-TP Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  2084. K4F661612E Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  2085. K4G163222A Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2086. K4G163222A-PC/L50 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2087. K4G163222A-PC/L55 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2088. K4G163222A-PC/L60 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2089. K4G163222A-PC/L70 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2090. K4G163222A-PC/L80 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2091. K4G163222A-QC/L50 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2092. K4G163222A-QC/L55 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2093. K4G163222A-QC/L60 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2094. K4G163222A-QC/L70 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2095. K4G163222A-QC/L80 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  2096. K4G323222A Samsung - 32mbit Sgram
  2097. K4G323222A-PC/L45 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2098. K4G323222A-PC/L50 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2099. K4G323222A-PC/L60 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2100. K4G323222A-PC/L70 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2101. K4G323222A-PC/L7C Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2102. K4G323222A-QC/L45 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2103. K4G323222A-QC/L50 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2104. K4G323222A-QC/L60 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2105. K4G323222A-QC/L70 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2106. K4G323222A-QC/L7C Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  2107. K4G323222M Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2108. K4G323222M-PC/L45 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2109. K4G323222M-PC/L50 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2110. K4G323222M-PC/L55 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2111. K4G323222M-PC/L60 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2112. K4G323222M-PC/L70 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2113. K4G323222M-PC/L7C Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2114. K4G323222M-PC/L80 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2115. K4G323222M-QC/L45 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2116. K4G323222M-QC/L50 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2117. K4G323222M-QC/L55 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2118. K4G323222M-QC/L60 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2119. K4G323222M-QC/L70 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2120. K4G323222M-QC/L7C Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2121. K4G323222M-QC/L80 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  2122. K4G813222B Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  2123. K4G813222B-PC10 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  2124. K4G813222B-PC70 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  2125. K4G813222B-PC80 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  2126. K4G813222B-QC10 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  2127. K4G813222B-QC70 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  2128. K4G813222B-QC80 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  2129. K4H1G0438A Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2130. K4H1G0438A-TCA0 Samsung - 128Mb DDR SDRAM
  2131. K4H1G0438A-TCA2 Samsung - 128Mb DDR SDRAM
  2132. K4H1G0438A-TCB0 Samsung - 128Mb DDR SDRAM
  2133. K4H1G0438A-TLA0 Samsung - 128Mb DDR SDRAM
  2134. K4H1G0438A-TLA2 Samsung - 128Mb DDR SDRAM
  2135. K4H1G0438A-TLB0 Samsung - 128Mb DDR SDRAM
  2136. K4H1G0438A-UC/LCC,B3,A2,B0 Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2137. K4H1G0438B-TCA0 Samsung - 128Mb DDR SDRAM
  2138. K4H1G0438B-TCA2 Samsung - 128Mb DDR SDRAM
  2139. K4H1G0438B-TCB0 Samsung - 128Mb DDR SDRAM
  2140. K4H1G0438B-TLA0 Samsung - 128Mb DDR SDRAM
  2141. K4H1G0438B-TLA2 Samsung - 128Mb DDR SDRAM
  2142. K4H1G0438B-TLB0 Samsung - 128Mb DDR SDRAM
  2143. K4H1G0438C-TCA0 Samsung - 128Mb DDR SDRAM
  2144. K4H1G0438C-TCA2 Samsung - 128Mb DDR SDRAM
  2145. K4H1G0438C-TCB0 Samsung - 128Mb DDR SDRAM
  2146. K4H1G0438C-TLA0 Samsung - 128Mb DDR SDRAM
  2147. K4H1G0438C-TLA2 Samsung - 128Mb DDR SDRAM
  2148. K4H1G0438C-TLB0 Samsung - 128Mb DDR SDRAM
  2149. K4H1G0438D-TCA0 Samsung - 128Mb DDR SDRAM
  2150. K4H1G0438D-TCA2 Samsung - 128Mb DDR SDRAM
  2151. K4H1G0438D-TCB0 Samsung - 128Mb DDR SDRAM
  2152. K4H1G0438D-TLA0 Samsung - 128Mb DDR SDRAM
  2153. K4H1G0438D-TLA2 Samsung - 128Mb DDR SDRAM
  2154. K4H1G0438D-TLB0 Samsung - 128Mb DDR SDRAM
  2155. K4H1G0438E-TCA0 Samsung - 128Mb DDR SDRAM
  2156. K4H1G0438E-TCA2 Samsung - 128Mb DDR SDRAM
  2157. K4H1G0438E-TCB0 Samsung - 128Mb DDR SDRAM
  2158. K4H1G0438E-TLA0 Samsung - 128Mb DDR SDRAM
  2159. K4H1G0438E-TLA2 Samsung - 128Mb DDR SDRAM
  2160. K4H1G0438E-TLB0 Samsung - 128Mb DDR SDRAM
  2161. K4H1G0438M Samsung - 1gb M-die Ddr Sdram Specification
  2162. K4H1G0438M-LA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2163. K4H1G0438M-LB0 Samsung - 1gb M-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2164. K4H1G0438M-LB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2165. K4H1G0438M-TC(L)/B3,A2,B0 Samsung - st. 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  2166. K4H1G0438M-TCA0 Samsung - 128Mb DDR SDRAM
  2167. K4H1G0438M-TCA2 Samsung - 128Mb DDR SDRAM
  2168. K4H1G0438M-TCB0 Samsung - 128Mb DDR SDRAM
  2169. K4H1G0438M-TLA0 Samsung - 128Mb DDR SDRAM
  2170. K4H1G0438M-TLA2 Samsung - 128Mb DDR SDRAM
  2171. K4H1G0438M-TLB0 Samsung - 128Mb DDR SDRAM
  2172. K4H1G0438M-UC Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2173. K4H1G0438M-UC0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2174. K4H1G0438M-UC2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2175. K4H1G0438M-UC3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2176. K4H1G0438M-UCA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2177. K4H1G0438M-UCB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2178. K4H1G0438M-UCB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2179. K4H1G0438M-ULA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2180. K4H1G0438M-ULB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2181. K4H1G0438M-ULB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2182. K4H1G0638B Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  2183. K4H1G0638B-T(U)C/LA2 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  2184. K4H1G0638B-T(U)C/LB0 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  2185. K4H1G0638B-TC/LA2 Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  2186. K4H1G0638B-TC/LAA Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  2187. K4H1G0638B-TC/LB0 Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  2188. K4H1G0638C Samsung - Stacked 1gb C-die Ddr Sdram Specification
  2189. K4H1G0638C-UC/LA2,B0 Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0638C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  2190. K4H1G0738B Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  2191. K4H1G0738B-T(U)C/LA2 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  2192. K4H1G0738B-T(U)C/LB0 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  2193. K4H1G0738B-TC/LA2 Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  2194. K4H1G0738B-TC/LAA Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  2195. K4H1G0738B-TC/LB0 Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  2196. K4H1G0738C Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  2197. K4H1G0738C-UC/LA2,B0 Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0638C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  2198. K4H1G0838A Samsung - 32M x 8Bit x 4 Banks Double Data Rate SDRAMhe K4H1G0838A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2199. K4H1G0838A-TCA0 Samsung - 128Mb DDR SDRAM
  2200. K4H1G0838A-TCA2 Samsung - 128Mb DDR SDRAM
  2201. K4H1G0838A-TCB0 Samsung - 128Mb DDR SDRAM
  2202. K4H1G0838A-TLA0 Samsung - 128Mb DDR SDRAM
  2203. K4H1G0838A-TLA2 Samsung - 128Mb DDR SDRAM
  2204. K4H1G0838A-TLB0 Samsung - 128Mb DDR SDRAM
  2205. K4H1G0838A-UC/LCC,B3,A2,B0 Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2206. K4H1G0838B-TCA0 Samsung - 128Mb DDR SDRAM
  2207. K4H1G0838B-TCA2 Samsung - 128Mb DDR SDRAM
  2208. K4H1G0838B-TCB0 Samsung - 128Mb DDR SDRAM
  2209. K4H1G0838B-TLA0 Samsung - 128Mb DDR SDRAM
  2210. K4H1G0838B-TLA2 Samsung - 128Mb DDR SDRAM
  2211. K4H1G0838B-TLB0 Samsung - 128Mb DDR SDRAM
  2212. K4H1G0838C-TCA0 Samsung - 128Mb DDR SDRAM
  2213. K4H1G0838C-TCA2 Samsung - 128Mb DDR SDRAM
  2214. K4H1G0838C-TCB0 Samsung - 128Mb DDR SDRAM
  2215. K4H1G0838C-TLA0 Samsung - 128Mb DDR SDRAM
  2216. K4H1G0838C-TLA2 Samsung - 128Mb DDR SDRAM
  2217. K4H1G0838C-TLB0 Samsung - 128Mb DDR SDRAM
  2218. K4H1G0838D-TCA0 Samsung - 128Mb DDR SDRAM
  2219. K4H1G0838D-TCA2 Samsung - 128Mb DDR SDRAM
  2220. K4H1G0838D-TCB0 Samsung - 128Mb DDR SDRAM
  2221. K4H1G0838D-TLA0 Samsung - 128Mb DDR SDRAM
  2222. K4H1G0838D-TLA2 Samsung - 128Mb DDR SDRAM
  2223. K4H1G0838D-TLB0 Samsung - 128Mb DDR SDRAM
  2224. K4H1G0838E-TCA0 Samsung - 128Mb DDR SDRAM
  2225. K4H1G0838E-TCA2 Samsung - 128Mb DDR SDRAM
  2226. K4H1G0838E-TCB0 Samsung - 128Mb DDR SDRAM
  2227. K4H1G0838E-TLA0 Samsung - 128Mb DDR SDRAM
  2228. K4H1G0838E-TLA2 Samsung - 128Mb DDR SDRAM
  2229. K4H1G0838E-TLB0 Samsung - 128Mb DDR SDRAM
  2230. K4H1G0838M Samsung - 32M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0838M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  2231. K4H1G0838M-LA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2232. K4H1G0838M-LB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2233. K4H1G0838M-LB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2234. K4H1G0838M-TCA0 Samsung - 128Mb DDR SDRAM
  2235. K4H1G0838M-TCA2 Samsung - 128Mb DDR SDRAM
  2236. K4H1G0838M-TCB0 Samsung - 128Mb DDR SDRAM
  2237. K4H1G0838M-TLA0 Samsung - 128Mb DDR SDRAM
  2238. K4H1G0838M-TLA2 Samsung - 128Mb DDR SDRAM
  2239. K4H1G0838M-TLB0 Samsung - 128Mb DDR SDRAM
  2240. K4H1G0838M-UC(L)/B3,A2,B0 Samsung - st. 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  2241. K4H1G0838M-UC0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2242. K4H1G0838M-UC2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2243. K4H1G0838M-UC3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2244. K4H1G0838M-UCA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2245. K4H1G0838M-UCB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2246. K4H1G0838M-UCB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2247. K4H1G0838M-ULA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2248. K4H1G0838M-ULB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2249. K4H1G0838M-ULB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2250. K4H1G1638A-TCA0 Samsung - 128Mb DDR SDRAM
  2251. K4H1G1638A-TCA2 Samsung - 128Mb DDR SDRAM
  2252. K4H1G1638A-TCB0 Samsung - 128Mb DDR SDRAM
  2253. K4H1G1638A-TLA0 Samsung - 128Mb DDR SDRAM
  2254. K4H1G1638A-TLA2 Samsung - 128Mb DDR SDRAM
  2255. K4H1G1638A-TLB0 Samsung - 128Mb DDR SDRAM
  2256. K4H1G1638B-TCA0 Samsung - 128Mb DDR SDRAM
  2257. K4H1G1638B-TCA2 Samsung - 128Mb DDR SDRAM
  2258. K4H1G1638B-TCB0 Samsung - 128Mb DDR SDRAM
  2259. K4H1G1638B-TLA0 Samsung - 128Mb DDR SDRAM
  2260. K4H1G1638B-TLA2 Samsung - 128Mb DDR SDRAM
  2261. K4H1G1638B-TLB0 Samsung - 128Mb DDR SDRAM
  2262. K4H1G1638C-TCA0 Samsung - 128Mb DDR SDRAM
  2263. K4H1G1638C-TCA2 Samsung - 128Mb DDR SDRAM
  2264. K4H1G1638C-TCB0 Samsung - 128Mb DDR SDRAM
  2265. K4H1G1638C-TLA0 Samsung - 128Mb DDR SDRAM
  2266. K4H1G1638C-TLA2 Samsung - 128Mb DDR SDRAM
  2267. K4H1G1638C-TLB0 Samsung - 128Mb DDR SDRAM
  2268. K4H1G1638D-TCA0 Samsung - 128Mb DDR SDRAM
  2269. K4H1G1638D-TCA2 Samsung - 128Mb DDR SDRAM
  2270. K4H1G1638D-TCB0 Samsung - 128Mb DDR SDRAM
  2271. K4H1G1638D-TLA0 Samsung - 128Mb DDR SDRAM
  2272. K4H1G1638D-TLA2 Samsung - 128Mb DDR SDRAM
  2273. K4H1G1638D-TLB0 Samsung - 128Mb DDR SDRAM
  2274. K4H1G1638E-TCA0 Samsung - 128Mb DDR SDRAM
  2275. K4H1G1638E-TCA2 Samsung - 128Mb DDR SDRAM
  2276. K4H1G1638E-TCB0 Samsung - 128Mb DDR SDRAM
  2277. K4H1G1638E-TLA0 Samsung - 128Mb DDR SDRAM
  2278. K4H1G1638E-TLA2 Samsung - 128Mb DDR SDRAM
  2279. K4H1G1638E-TLB0 Samsung - 128Mb DDR SDRAM
  2280. K4H1G1638M-TCA0 Samsung - 128Mb DDR SDRAM
  2281. K4H1G1638M-TCA2 Samsung - 128Mb DDR SDRAM
  2282. K4H1G1638M-TCB0 Samsung - 128Mb DDR SDRAM
  2283. K4H1G1638M-TLA0 Samsung - 128Mb DDR SDRAM
  2284. K4H1G1638M-TLA2 Samsung - 128Mb DDR SDRAM
  2285. K4H1G1638M-TLB0 Samsung - 128Mb DDR SDRAM
  2286. K4H1G3238A-TCA0 Samsung - 128Mb DDR SDRAM
  2287. K4H1G3238A-TCA2 Samsung - 128Mb DDR SDRAM
  2288. K4H1G3238A-TCB0 Samsung - 128Mb DDR SDRAM
  2289. K4H1G3238A-TLA0 Samsung - 128Mb DDR SDRAM
  2290. K4H1G3238A-TLA2 Samsung - 128Mb DDR SDRAM
  2291. K4H1G3238A-TLB0 Samsung - 128Mb DDR SDRAM
  2292. K4H1G3238B-TCA0 Samsung - 128Mb DDR SDRAM
  2293. K4H1G3238B-TCA2 Samsung - 128Mb DDR SDRAM
  2294. K4H1G3238B-TCB0 Samsung - 128Mb DDR SDRAM
  2295. K4H1G3238B-TLA0 Samsung - 128Mb DDR SDRAM
  2296. K4H1G3238B-TLA2 Samsung - 128Mb DDR SDRAM
  2297. K4H1G3238B-TLB0 Samsung - 128Mb DDR SDRAM
  2298. K4H1G3238C-TCA0 Samsung - 128Mb DDR SDRAM
  2299. K4H1G3238C-TCA2 Samsung - 128Mb DDR SDRAM
  2300. K4H1G3238C-TCB0 Samsung - 128Mb DDR SDRAM
  2301. K4H1G3238C-TLA0 Samsung - 128Mb DDR SDRAM
  2302. K4H1G3238C-TLA2 Samsung - 128Mb DDR SDRAM
  2303. K4H1G3238C-TLB0 Samsung - 128Mb DDR SDRAM
  2304. K4H1G3238D-TCA0 Samsung - 128Mb DDR SDRAM
  2305. K4H1G3238D-TCA2 Samsung - 128Mb DDR SDRAM
  2306. K4H1G3238D-TCB0 Samsung - 128Mb DDR SDRAM
  2307. K4H1G3238D-TLA0 Samsung - 128Mb DDR SDRAM
  2308. K4H1G3238D-TLA2 Samsung - 128Mb DDR SDRAM
  2309. K4H1G3238D-TLB0 Samsung - 128Mb DDR SDRAM
  2310. K4H1G3238E-TCA0 Samsung - 128Mb DDR SDRAM
  2311. K4H1G3238E-TCA2 Samsung - 128Mb DDR SDRAM
  2312. K4H1G3238E-TCB0 Samsung - 128Mb DDR SDRAM
  2313. K4H1G3238E-TLA0 Samsung - 128Mb DDR SDRAM
  2314. K4H1G3238E-TLA2 Samsung - 128Mb DDR SDRAM
  2315. K4H1G3238E-TLB0 Samsung - 128Mb DDR SDRAM
  2316. K4H1G3238M-TCA0 Samsung - 128Mb DDR SDRAM
  2317. K4H1G3238M-TCA2 Samsung - 128Mb DDR SDRAM
  2318. K4H1G3238M-TCB0 Samsung - 128Mb DDR SDRAM
  2319. K4H1G3238M-TLA0 Samsung - 128Mb DDR SDRAM
  2320. K4H1G3238M-TLA2 Samsung - 128Mb DDR SDRAM
  2321. K4H1G3238M-TLB0 Samsung - 128Mb DDR SDRAM
  2322. K4H280438A-TCA0 Samsung - 128Mb DDR SDRAM
  2323. K4H280438A-TCA2 Samsung - 128Mb DDR SDRAM
  2324. K4H280438A-TCB0 Samsung - 128Mb DDR SDRAM
  2325. K4H280438A-TLA0 Samsung - 128Mb DDR SDRAM
  2326. K4H280438A-TLA2 Samsung - 128Mb DDR SDRAM
  2327. K4H280438A-TLB0 Samsung - 128Mb DDR SDRAM
  2328. K4H280438B Samsung - K4H280438B 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2329. K4H280438B-TCA0 Samsung - 128Mb DDR SDRAM
  2330. K4H280438B-TCA2 Samsung - 128Mb DDR SDRAM
  2331. K4H280438B-TCB0 Samsung - 128Mb DDR SDRAM
  2332. K4H280438B-TLA0 Samsung - 128Mb DDR SDRAM
  2333. K4H280438B-TLA2 Samsung - 128Mb DDR SDRAM
  2334. K4H280438B-TLB0 Samsung - 128Mb DDR SDRAM
  2335. K4H280438C Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2336. K4H280438C-TCA0 Samsung - 128Mb DDR SDRAM
  2337. K4H280438C-TCA2 Samsung - 128Mb DDR SDRAM
  2338. K4H280438C-TCB0 Samsung - 128Mb DDR SDRAM
  2339. K4H280438C-TCB3 Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2340. K4H280438C-TLA0 Samsung - 128Mb DDR SDRAM
  2341. K4H280438C-TLA2 Samsung - 128Mb DDR SDRAM
  2342. K4H280438C-TLB0 Samsung - 128Mb DDR SDRAM
  2343. K4H280438C-TLB3 Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2344. K4H280438D Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2345. K4H280438D-TCA0 Samsung - 128Mb DDR SDRAM
  2346. K4H280438D-TCA2 Samsung - 128Mb DDR SDRAM
  2347. K4H280438D-TCB0 Samsung - 128Mb DDR SDRAM
  2348. K4H280438D-TCB3 Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2349. K4H280438D-TLA0 Samsung - 128Mb DDR SDRAM
  2350. K4H280438D-TLA2 Samsung - 128Mb DDR SDRAM
  2351. K4H280438D-TLB0 Samsung - 128Mb DDR SDRAM
  2352. K4H280438D-TLB3 Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2353. K4H280438E Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2354. K4H280438E-TCA0 Samsung - 128Mb DDR SDRAM
  2355. K4H280438E-TCA2 Samsung - 128Mb DDR SDRAM
  2356. K4H280438E-TCB0 Samsung - 128Mb DDR SDRAM
  2357. K4H280438E-TC/LA2 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2358. K4H280438E-TC/LAA Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2359. K4H280438E-TC/LB0 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2360. K4H280438E-TC/LB3 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  2361. K4H280438E-TLA0 Samsung - 128Mb DDR SDRAM
  2362. K4H280438E-TLA2 Samsung - 128Mb DDR SDRAM
  2363. K4H280438E-TLB0 Samsung - 128Mb DDR SDRAM
  2364. K4H280438F Samsung - 128mb F-die Ddr Sdram Specification
  2365. K4H280438F-UC Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2366. K4H280438F-UCA0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2367. K4H280438F-UCA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2368. K4H280438F-UCB0 Samsung - 128mb F-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2369. K4H280438F-ULA0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2370. K4H280438F-ULA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2371. K4H280438F-ULB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2372. K4H280438M-TCA0 Samsung - 128Mb DDR SDRAM
  2373. K4H280438M-TCA2 Samsung - 128Mb DDR SDRAM
  2374. K4H280438M-TCB0 Samsung - 128Mb DDR SDRAM
  2375. K4H280438M-TLA0 Samsung - 128Mb DDR SDRAM
  2376. K4H280438M-TLA2 Samsung - 128Mb DDR SDRAM
  2377. K4H280438M-TLB0 Samsung - 128Mb DDR SDRAM
  2378. K4H280838A-TCA0 Samsung - 128Mb DDR SDRAM
  2379. K4H280838A-TCA2 Samsung - 128Mb DDR SDRAM
  2380. K4H280838A-TCB0 Samsung - 128Mb DDR SDRAM
  2381. K4H280838A-TLA0 Samsung - 128Mb DDR SDRAM
  2382. K4H280838A-TLA2 Samsung - 128Mb DDR SDRAM
  2383. K4H280838A-TLB0 Samsung - 128Mb DDR SDRAM
  2384. K4H280838B Samsung - K4H280838B 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2385. K4H280838B-TCA0 Samsung - 128Mb DDR SDRAM
  2386. K4H280838B-TCA2 Samsung - 128Mb DDR SDRAM
  2387. K4H280838B-TCB0 Samsung - 128Mb DDR SDRAM
  2388. K4H280838B-TLA0 Samsung - 128Mb DDR SDRAM
  2389. K4H280838B-TLA2 Samsung - 128Mb DDR SDRAM
  2390. K4H280838B-TLB0 Samsung - 128Mb DDR SDRAM
  2391. K4H280838C Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2392. K4H280838C-TCA0 Samsung - 128Mb DDR SDRAM
  2393. K4H280838C-TCA2 Samsung - 128Mb DDR SDRAM
  2394. K4H280838C-TCB0 Samsung - 128Mb DDR SDRAM
  2395. K4H280838C-TCB3 Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2396. K4H280838C-TLA0 Samsung - 128Mb DDR SDRAM
  2397. K4H280838C-TLA2 Samsung - 128Mb DDR SDRAM
  2398. K4H280838C-TLB0 Samsung - 128Mb DDR SDRAM
  2399. K4H280838C-TLB3 Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2400. K4H280838D Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2401. K4H280838D-TCA0 Samsung - 128Mb DDR SDRAM
  2402. K4H280838D-TCA2 Samsung - 128Mb DDR SDRAM
  2403. K4H280838D-TCB0 Samsung - 128Mb DDR SDRAM
  2404. K4H280838D-TCB3 Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2405. K4H280838D-TLA0 Samsung - 128Mb DDR SDRAM
  2406. K4H280838D-TLA2 Samsung - 128Mb DDR SDRAM
  2407. K4H280838D-TLB0 Samsung - 128Mb DDR SDRAM
  2408. K4H280838D-TLB3 Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2409. K4H280838E Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2410. K4H280838E-TCA0 Samsung - 128Mb DDR SDRAM
  2411. K4H280838E-TCA2 Samsung - 128Mb DDR SDRAM
  2412. K4H280838E-TCB0 Samsung - 128Mb DDR SDRAM
  2413. K4H280838E-TC/LA2 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2414. K4H280838E-TC/LAA Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2415. K4H280838E-TC/LB0 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2416. K4H280838E-TC/LB3 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2417. K4H280838E-TLA0 Samsung - 128Mb DDR SDRAM
  2418. K4H280838E-TLA2 Samsung - 128Mb DDR SDRAM
  2419. K4H280838E-TLB0 Samsung - 128Mb DDR SDRAM
  2420. K4H280838F Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  2421. K4H280838F-TC/LB3 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  2422. K4H280838F-UCA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2423. K4H280838F-UCB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2424. K4H280838F-UCB3 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2425. K4H280838F-UC/LA2 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  2426. K4H280838F-UC/LB0 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  2427. K4H280838F-ULA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2428. K4H280838F-ULB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2429. K4H280838F-ULB3 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2430. K4H280838M-TCA0 Samsung - 128Mb DDR SDRAM
  2431. K4H280838M-TCA2 Samsung - 128Mb DDR SDRAM
  2432. K4H280838M-TCB0 Samsung - 128Mb DDR SDRAM
  2433. K4H280838M-TLA0 Samsung - 128Mb DDR SDRAM
  2434. K4H280838M-TLA2 Samsung - 128Mb DDR SDRAM
  2435. K4H280838M-TLB0 Samsung - 128Mb DDR SDRAM
  2436. K4H281638A-TCA0 Samsung - 128Mb DDR SDRAM
  2437. K4H281638A-TCA2 Samsung - 128Mb DDR SDRAM
  2438. K4H281638A-TCB0 Samsung - 128Mb DDR SDRAM
  2439. K4H281638A-TLA0 Samsung - 128Mb DDR SDRAM
  2440. K4H281638A-TLA2 Samsung - 128Mb DDR SDRAM
  2441. K4H281638A-TLB0 Samsung - 128Mb DDR SDRAM
  2442. K4H281638B Samsung - K4H281638B 128Mb DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  2443. K4H281638B-TCA0 Samsung - 128Mb DDR SDRAM
  2444. K4H281638B-TCA2 Samsung - 128Mb DDR SDRAM
  2445. K4H281638B-TCB0 Samsung - 128Mb DDR SDRAM
  2446. K4H281638B-TLA0 Samsung - 128Mb DDR SDRAM
  2447. K4H281638B-TLA2 Samsung - 128Mb DDR SDRAM
  2448. K4H281638B-TLB0 Samsung - 128Mb DDR SDRAM
  2449. K4H281638C-TCA0 Samsung - 128Mb DDR SDRAM
  2450. K4H281638C-TCA2 Samsung - 128Mb DDR SDRAM
  2451. K4H281638C-TCB0 Samsung - 128Mb DDR SDRAM
  2452. K4H281638C-TLA0 Samsung - 128Mb DDR SDRAM
  2453. K4H281638C-TLA2 Samsung - 128Mb DDR SDRAM
  2454. K4H281638C-TLB0 Samsung - 128Mb DDR SDRAM
  2455. K4H281638D Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  2456. K4H281638D-TCA0 Samsung - 128Mb DDR SDRAM
  2457. K4H281638D-TCA2 Samsung - 128Mb DDR SDRAM
  2458. K4H281638D-TCB0 Samsung - 128Mb DDR SDRAM
  2459. K4H281638D-TCB3 Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  2460. K4H281638D-TLA0 Samsung - 128Mb DDR SDRAM
  2461. K4H281638D-TLA2 Samsung - 128Mb DDR SDRAM
  2462. K4H281638D-TLB0 Samsung - 128Mb DDR SDRAM
  2463. K4H281638D-TLB3 Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  2464. K4H281638E Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2465. K4H281638E-TCA0 Samsung - 128Mb DDR SDRAM
  2466. K4H281638E-TCA2 Samsung - 128Mb DDR SDRAM
  2467. K4H281638E-TCB0 Samsung - 128Mb DDR SDRAM
  2468. K4H281638E-TC/LA2 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2469. K4H281638E-TC/LB0 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2470. K4H281638E-TC/LB3 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2471. K4H281638E-TLA0 Samsung - 128Mb DDR SDRAM
  2472. K4H281638E-TLA2 Samsung - 128Mb DDR SDRAM
  2473. K4H281638E-TLB0 Samsung - 128Mb DDR SDRAM
  2474. K4H281638M-TCA0 Samsung - 128Mb DDR SDRAM
  2475. K4H281638M-TCA2 Samsung - 128Mb DDR SDRAM
  2476. K4H281638M-TCB0 Samsung - 128Mb DDR SDRAM
  2477. K4H281638M-TLA0 Samsung - 128Mb DDR SDRAM
  2478. K4H281638M-TLA2 Samsung - 128Mb DDR SDRAM
  2479. K4H281638M-TLB0 Samsung - 128Mb DDR SDRAM
  2480. K4H283238A-TCA0 Samsung - 128Mb DDR SDRAM
  2481. K4H283238A-TCA2 Samsung - 128Mb DDR SDRAM
  2482. K4H283238A-TCB0 Samsung - 128Mb DDR SDRAM
  2483. K4H283238A-TLA0 Samsung - 128Mb DDR SDRAM
  2484. K4H283238A-TLA2 Samsung - 128Mb DDR SDRAM
  2485. K4H283238A-TLB0 Samsung - 128Mb DDR SDRAM
  2486. K4H283238B-TCA0 Samsung - 128Mb DDR SDRAM
  2487. K4H283238B-TCA2 Samsung - 128Mb DDR SDRAM
  2488. K4H283238B-TCB0 Samsung - 128Mb DDR SDRAM
  2489. K4H283238B-TLA0 Samsung - 128Mb DDR SDRAM
  2490. K4H283238B-TLA2 Samsung - 128Mb DDR SDRAM
  2491. K4H283238B-TLB0 Samsung - 128Mb DDR SDRAM
  2492. K4H283238C-TCA0 Samsung - 128Mb DDR SDRAM
  2493. K4H283238C-TCA2 Samsung - 128Mb DDR SDRAM
  2494. K4H283238C-TCB0 Samsung - 128Mb DDR SDRAM
  2495. K4H283238C-TLA0 Samsung - 128Mb DDR SDRAM
  2496. K4H283238C-TLA2 Samsung - 128Mb DDR SDRAM
  2497. K4H283238C-TLB0 Samsung - 128Mb DDR SDRAM
  2498. K4H283238D-TCA0 Samsung - 128Mb DDR SDRAM
  2499. K4H283238D-TCA2 Samsung - 128Mb DDR SDRAM
  2500. K4H283238D-TCB0 Samsung - 128Mb DDR SDRAM
  2501. K4H283238D-TLA0 Samsung - 128Mb DDR SDRAM
  2502. K4H283238D-TLA2 Samsung - 128Mb DDR SDRAM
  2503. K4H283238D-TLB0 Samsung - 128Mb DDR SDRAM
  2504. K4H283238E-TCA0 Samsung - 128Mb DDR SDRAM
  2505. K4H283238E-TCA2 Samsung - 128Mb DDR SDRAM
  2506. K4H283238E-TCB0 Samsung - 128Mb DDR SDRAM
  2507. K4H283238E-TLA0 Samsung - 128Mb DDR SDRAM
  2508. K4H283238E-TLA2 Samsung - 128Mb DDR SDRAM
  2509. K4H283238E-TLB0 Samsung - 128Mb DDR SDRAM
  2510. K4H283238M-TCA0 Samsung - 128Mb DDR SDRAM
  2511. K4H283238M-TCA2 Samsung - 128Mb DDR SDRAM
  2512. K4H283238M-TCB0 Samsung - 128Mb DDR SDRAM
  2513. K4H283238M-TLA0 Samsung - 128Mb DDR SDRAM
  2514. K4H283238M-TLA2 Samsung - 128Mb DDR SDRAM
  2515. K4H283238M-TLB0 Samsung - 128Mb DDR SDRAM
  2516. K4H2G0638A Samsung - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2517. K4H2G0638A-UC/LCC Samsung - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2518. K4H510438 Samsung - 512mb B-die Ddr Sdram Specification
  2519. K4H510438A-TCA0 Samsung - 128Mb DDR SDRAM
  2520. K4H510438A-TCA2 Samsung - 128Mb DDR SDRAM
  2521. K4H510438A-TCB0 Samsung - 128Mb DDR SDRAM
  2522. K4H510438A-TLA0 Samsung - 128Mb DDR SDRAM
  2523. K4H510438A-TLA2 Samsung - 128Mb DDR SDRAM
  2524. K4H510438A-TLB0 Samsung - 128Mb DDR SDRAM
  2525. K4H510438B Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2526. K4H510438B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510438B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2527. K4H510438B-TCA0 Samsung - 128Mb DDR SDRAM
  2528. K4H510438B-TCA2 Samsung - 128Mb DDR SDRAM
  2529. K4H510438B-TCB0 Samsung - 128Mb DDR SDRAM
  2530. K4H510438B-TC/LA2 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2531. K4H510438B-TC/LAA Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2532. K4H510438B-TC/LB0 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2533. K4H510438B-TC/LB3 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2534. K4H510438B-TLA0 Samsung - 128Mb DDR SDRAM
  2535. K4H510438B-TLA2 Samsung - 128Mb DDR SDRAM
  2536. K4H510438B-TLB0 Samsung - 128Mb DDR SDRAM
  2537. K4H510438C Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2538. K4H510438C-LA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2539. K4H510438C-LB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2540. K4H510438C-LB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2541. K4H510438C-LCC Samsung - 512mb C-die Ddr Sdram Specification
  2542. K4H510438C-TCA0 Samsung - 128Mb DDR SDRAM
  2543. K4H510438C-TCA2 Samsung - 128Mb DDR SDRAM
  2544. K4H510438C-TCB0 Samsung - 128Mb DDR SDRAM
  2545. K4H510438C-TLA0 Samsung - 128Mb DDR SDRAM
  2546. K4H510438C-TLA2 Samsung - 128Mb DDR SDRAM
  2547. K4H510438C-TLB0 Samsung - 128Mb DDR SDRAM
  2548. K4H510438C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2549. K4H510438C-UC(L)/B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2550. K4H510438C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2551. K4H510438C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2552. K4H510438C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2553. K4H510438C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2554. K4H510438C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2555. K4H510438C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2556. K4H510438C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2557. K4H510438C-ZCCC Samsung - 512mb C-die Ddr Sdram Specification
  2558. K4H510438C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2559. K4H510438C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2560. K4H510438D-TCA0 Samsung - 128Mb DDR SDRAM
  2561. K4H510438D-TCA2 Samsung - 128Mb DDR SDRAM
  2562. K4H510438D-TCB0 Samsung - 128Mb DDR SDRAM
  2563. K4H510438D-TLA0 Samsung - 128Mb DDR SDRAM
  2564. K4H510438D-TLA2 Samsung - 128Mb DDR SDRAM
  2565. K4H510438D-TLB0 Samsung - 128Mb DDR SDRAM
  2566. K4H510438E-TCA0 Samsung - 128Mb DDR SDRAM
  2567. K4H510438E-TCA2 Samsung - 128Mb DDR SDRAM
  2568. K4H510438E-TCB0 Samsung - 128Mb DDR SDRAM
  2569. K4H510438E-TLA0 Samsung - 128Mb DDR SDRAM
  2570. K4H510438E-TLA2 Samsung - 128Mb DDR SDRAM
  2571. K4H510438E-TLB0 Samsung - 128Mb DDR SDRAM
  2572. K4H510438M Samsung - K4H510438M 512Mb DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  2573. K4H510438M-TCA0 Samsung - 128Mb DDR SDRAM
  2574. K4H510438M-TCA2 Samsung - 128Mb DDR SDRAM
  2575. K4H510438M-TCB0 Samsung - 128Mb DDR SDRAM
  2576. K4H510438M-TLA0 Samsung - 128Mb DDR SDRAM
  2577. K4H510438M-TLA2 Samsung - 128Mb DDR SDRAM
  2578. K4H510438M-TLB0 Samsung - 128Mb DDR SDRAM
  2579. K4H510638B Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2580. K4H510638B-TCA0 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2581. K4H510638B-TCA2 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2582. K4H510638B-TCB0 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2583. K4H510638C Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2584. K4H510638C-TCA0 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2585. K4H510638C-TCA2 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2586. K4H510638C-TCB0 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2587. K4H510638C-TCB3 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2588. K4H510638D Samsung - K4H510638D The Data Sheet You Have Searched is Under Preparation. ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2589. K4H510638E Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2590. K4H510638E-TC/LA2 Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2591. K4H510638E-TC/LAA Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2592. K4H510638E-TC/LB0 Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2593. K4H510738E Samsung - Stacked 512mb E-die Ddr Sdram Specification (x4/x8)
  2594. K4H510738E-TC/LA2 Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2595. K4H510738E-TC/LAA Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2596. K4H510738E-TC/LB0 Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2597. K4H510838A-TCA0 Samsung - 128Mb DDR SDRAM
  2598. K4H510838A-TCA2 Samsung - 128Mb DDR SDRAM
  2599. K4H510838A-TCB0 Samsung - 128Mb DDR SDRAM
  2600. K4H510838A-TLA0 Samsung - 128Mb DDR SDRAM
  2601. K4H510838A-TLA2 Samsung - 128Mb DDR SDRAM
  2602. K4H510838A-TLB0 Samsung - 128Mb DDR SDRAM
  2603. K4H510838B Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2604. K4H510838B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2605. K4H510838B-N Samsung - 512mb B-die Ddr Sdram Specification 54 Stsop-ii (400mil X 441mil)
  2606. K4H510838B-TCA0 Samsung - 128Mb DDR SDRAM
  2607. K4H510838B-TCA2 Samsung - 128Mb DDR SDRAM
  2608. K4H510838B-TCB0 Samsung - 128Mb DDR SDRAM
  2609. K4H510838B-TC/LA2 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2610. K4H510838B-TC/LAA Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2611. K4H510838B-TC/LB0 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2612. K4H510838B-TC/LB3 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2613. K4H510838B-TLA0 Samsung - 128Mb DDR SDRAM
  2614. K4H510838B-TLA2 Samsung - 128Mb DDR SDRAM
  2615. K4H510838B-TLB0 Samsung - 128Mb DDR SDRAM
  2616. K4H510838C Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2617. K4H510838C-KCA0 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2618. K4H510838C-KCA2 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2619. K4H510838C-KCB0 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2620. K4H510838C-KCB3 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2621. K4H510838C-TCA0 Samsung - 128Mb DDR SDRAM
  2622. K4H510838C-TCA2 Samsung - 128Mb DDR SDRAM
  2623. K4H510838C-TCB0 Samsung - 128Mb DDR SDRAM
  2624. K4H510838C-TLA0 Samsung - 128Mb DDR SDRAM
  2625. K4H510838C-TLA2 Samsung - 128Mb DDR SDRAM
  2626. K4H510838C-TLB0 Samsung - 128Mb DDR SDRAM
  2627. K4H510838C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2628. K4H510838C-UC(L)/CC,B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510838C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2629. K4H510838C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2630. K4H510838C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2631. K4H510838C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2632. K4H510838C-UCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2633. K4H510838C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2634. K4H510838C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2635. K4H510838C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2636. K4H510838C-ULCC Samsung - 512Mb C-die DDR SDRAM Specification
  2637. K4H510838C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2638. K4H510838C-ZCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2639. K4H510838C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2640. K4H510838C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2641. K4H510838D Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2642. K4H510838D-LA2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2643. K4H510838D-LB0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2644. K4H510838D-LB3 Samsung - 512mb D-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2645. K4H510838D-LCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2646. K4H510838D-TCA0 Samsung - 128Mb DDR SDRAM
  2647. K4H510838D-TCA2 Samsung - 128Mb DDR SDRAM
  2648. K4H510838D-TCB0 Samsung - 128Mb DDR SDRAM
  2649. K4H510838D-TLA0 Samsung - 128Mb DDR SDRAM
  2650. K4H510838D-TLA2 Samsung - 128Mb DDR SDRAM
  2651. K4H510838D-TLB0 Samsung - 128Mb DDR SDRAM
  2652. K4H510838D-UC0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2653. K4H510838D-UC2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2654. K4H510838D-UC3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2655. K4H510838D-UCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2656. K4H510838D-UC/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2657. K4H510838E-TCA0 Samsung - 128Mb DDR SDRAM
  2658. K4H510838E-TCA2 Samsung - 128Mb DDR SDRAM
  2659. K4H510838E-TCB0 Samsung - 128Mb DDR SDRAM
  2660. K4H510838E-TLA0 Samsung - 128Mb DDR SDRAM
  2661. K4H510838E-TLA2 Samsung - 128Mb DDR SDRAM
  2662. K4H510838E-TLB0 Samsung - 128Mb DDR SDRAM
  2663. K4H510838M Samsung - K4H510838M 512Mb DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  2664. K4H510838M-TCA0 Samsung - 128Mb DDR SDRAM
  2665. K4H510838M-TCA2 Samsung - 128Mb DDR SDRAM
  2666. K4H510838M-TCB0 Samsung - 128Mb DDR SDRAM
  2667. K4H510838M-TLA0 Samsung - 128Mb DDR SDRAM
  2668. K4H510838M-TLA2 Samsung - 128Mb DDR SDRAM
  2669. K4H510838M-TLB0 Samsung - 128Mb DDR SDRAM
  2670. K4H511638 Samsung - 512Mb C-die DDR SDRAM Specification
  2671. K4H511638A-TCA0 Samsung - 128Mb DDR SDRAM
  2672. K4H511638A-TCA2 Samsung - 128Mb DDR SDRAM
  2673. K4H511638A-TCB0 Samsung - 128Mb DDR SDRAM
  2674. K4H511638A-TLA0 Samsung - 128Mb DDR SDRAM
  2675. K4H511638A-TLA2 Samsung - 128Mb DDR SDRAM
  2676. K4H511638A-TLB0 Samsung - 128Mb DDR SDRAM
  2677. K4H511638B Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2678. K4H511638B-G Samsung - 512mb B-die Ddr Sdram Specification
  2679. K4H511638B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2680. K4H511638B-TCA0 Samsung - 128Mb DDR SDRAM
  2681. K4H511638B-TCA2 Samsung - 128Mb DDR SDRAM
  2682. K4H511638B-TCB0 Samsung - 128Mb DDR SDRAM
  2683. K4H511638B-TC/LA2 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2684. K4H511638B-TC/LB0 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2685. K4H511638B-TC/LB3 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2686. K4H511638B-TLA0 Samsung - 128Mb DDR SDRAM
  2687. K4H511638B-TLA2 Samsung - 128Mb DDR SDRAM
  2688. K4H511638B-TLB0 Samsung - 128Mb DDR SDRAM
  2689. K4H511638C Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2690. K4H511638C-TCA0 Samsung - 128Mb DDR SDRAM
  2691. K4H511638C-TCA2 Samsung - 128Mb DDR SDRAM
  2692. K4H511638C-TCB0 Samsung - 128Mb DDR SDRAM
  2693. K4H511638C-TLA0 Samsung - 128Mb DDR SDRAM
  2694. K4H511638C-TLA2 Samsung - 128Mb DDR SDRAM
  2695. K4H511638C-TLB0 Samsung - 128Mb DDR SDRAM
  2696. K4H511638C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2697. K4H511638C-UC(L)/CC,B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2698. K4H511638C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2699. K4H511638C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2700. K4H511638C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2701. K4H511638C-UCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2702. K4H511638C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2703. K4H511638C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2704. K4H511638C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2705. K4H511638C-ULCC Samsung - 512Mb C-die DDR SDRAM Specification
  2706. K4H511638C-Z Samsung - 512Mb C-die DDR SDRAM Specification
  2707. K4H511638C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2708. K4H511638C-ZCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2709. K4H511638C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2710. K4H511638C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2711. K4H511638D Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2712. K4H511638D-LA2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2713. K4H511638D-LB0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2714. K4H511638D-LB3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2715. K4H511638D-LCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2716. K4H511638D-TCA0 Samsung - 128Mb DDR SDRAM
  2717. K4H511638D-TCA2 Samsung - 128Mb DDR SDRAM
  2718. K4H511638D-TCB0 Samsung - 128Mb DDR SDRAM
  2719. K4H511638D-TLA0 Samsung - 128Mb DDR SDRAM
  2720. K4H511638D-TLA2 Samsung - 128Mb DDR SDRAM
  2721. K4H511638D-TLB0 Samsung - 128Mb DDR SDRAM
  2722. K4H511638D-UC0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2723. K4H511638D-UC2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2724. K4H511638D-UC3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2725. K4H511638D-UCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2726. K4H511638D-UC/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2727. K4H511638E-TCA0 Samsung - 128Mb DDR SDRAM
  2728. K4H511638E-TCA2 Samsung - 128Mb DDR SDRAM
  2729. K4H511638E-TCB0 Samsung - 128Mb DDR SDRAM
  2730. K4H511638E-TLA0 Samsung - 128Mb DDR SDRAM
  2731. K4H511638E-TLA2 Samsung - 128Mb DDR SDRAM
  2732. K4H511638E-TLB0 Samsung - 128Mb DDR SDRAM
  2733. K4H511638M-TCA0 Samsung - 128Mb DDR SDRAM
  2734. K4H511638M-TCA2 Samsung - 128Mb DDR SDRAM
  2735. K4H511638M-TCB0 Samsung - 128Mb DDR SDRAM
  2736. K4H511638M-TLA0 Samsung - 128Mb DDR SDRAM
  2737. K4H511638M-TLA2 Samsung - 128Mb DDR SDRAM
  2738. K4H511638M-TLB0 Samsung - 128Mb DDR SDRAM
  2739. K4H513238A-TCA0 Samsung - 128Mb DDR SDRAM
  2740. K4H513238A-TCA2 Samsung - 128Mb DDR SDRAM
  2741. K4H513238A-TCB0 Samsung - 128Mb DDR SDRAM
  2742. K4H513238A-TLA0 Samsung - 128Mb DDR SDRAM
  2743. K4H513238A-TLA2 Samsung - 128Mb DDR SDRAM
  2744. K4H513238A-TLB0 Samsung - 128Mb DDR SDRAM
  2745. K4H513238B-TCA0 Samsung - 128Mb DDR SDRAM
  2746. K4H513238B-TCA2 Samsung - 128Mb DDR SDRAM
  2747. K4H513238B-TCB0 Samsung - 128Mb DDR SDRAM
  2748. K4H513238B-TLA0 Samsung - 128Mb DDR SDRAM
  2749. K4H513238B-TLA2 Samsung - 128Mb DDR SDRAM
  2750. K4H513238B-TLB0 Samsung - 128Mb DDR SDRAM
  2751. K4H513238C-TCA0 Samsung - 128Mb DDR SDRAM
  2752. K4H513238C-TCA2 Samsung - 128Mb DDR SDRAM
  2753. K4H513238C-TCB0 Samsung - 128Mb DDR SDRAM
  2754. K4H513238C-TLA0 Samsung - 128Mb DDR SDRAM
  2755. K4H513238C-TLA2 Samsung - 128Mb DDR SDRAM
  2756. K4H513238C-TLB0 Samsung - 128Mb DDR SDRAM
  2757. K4H513238D-TCA0 Samsung - 128Mb DDR SDRAM
  2758. K4H513238D-TCA2 Samsung - 128Mb DDR SDRAM
  2759. K4H513238D-TCB0 Samsung - 128Mb DDR SDRAM
  2760. K4H513238D-TLA0 Samsung - 128Mb DDR SDRAM
  2761. K4H513238D-TLA2 Samsung - 128Mb DDR SDRAM
  2762. K4H513238D-TLB0 Samsung - 128Mb DDR SDRAM
  2763. K4H513238E-TCA0 Samsung - 128Mb DDR SDRAM
  2764. K4H513238E-TCA2 Samsung - 128Mb DDR SDRAM
  2765. K4H513238E-TCB0 Samsung - 128Mb DDR SDRAM
  2766. K4H513238E-TLA0 Samsung - 128Mb DDR SDRAM
  2767. K4H513238E-TLA2 Samsung - 128Mb DDR SDRAM
  2768. K4H513238E-TLB0 Samsung - 128Mb DDR SDRAM
  2769. K4H513238M-TCA0 Samsung - 128Mb DDR SDRAM
  2770. K4H513238M-TCA2 Samsung - 128Mb DDR SDRAM
  2771. K4H513238M-TCB0 Samsung - 128Mb DDR SDRAM
  2772. K4H513238M-TLA0 Samsung - 128Mb DDR SDRAM
  2773. K4H513238M-TLA2 Samsung - 128Mb DDR SDRAM
  2774. K4H513238M-TLB0 Samsung - 128Mb DDR SDRAM
  2775. K4H56038D-TC Samsung - 256mb D-die Ddr400 Sdram Specification
  2776. K4H560438 Samsung - 128Mb DDR SDRAM
  2777. K4H560438A-TCA0 Samsung - 128Mb DDR SDRAM
  2778. K4H560438A-TCA2 Samsung - 128Mb DDR SDRAM
  2779. K4H560438A-TCB0 Samsung - 128Mb DDR SDRAM
  2780. K4H560438A-TLA0 Samsung - 128Mb DDR SDRAM
  2781. K4H560438A-TLA2 Samsung - 128Mb DDR SDRAM
  2782. K4H560438A-TLB0 Samsung - 128Mb DDR SDRAM
  2783. K4H560438B Samsung - K4H560438B 256Mb DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266
  2784. K4H560438B-TCA0 Samsung - 128Mb DDR SDRAM
  2785. K4H560438B-TCA2 Samsung - 128Mb DDR SDRAM
  2786. K4H560438B-TCB0 Samsung - 128Mb DDR SDRAM
  2787. K4H560438B-TLA0 Samsung - 128Mb DDR SDRAM
  2788. K4H560438B-TLA2 Samsung - 128Mb DDR SDRAM
  2789. K4H560438B-TLB0 Samsung - 128Mb DDR SDRAM
  2790. K4H560438C Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2791. K4H560438C-CA2 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2792. K4H560438C-CB3 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2793. K4H560438C-LA2 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2794. K4H560438C-LB3 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2795. K4H560438C-TCA0 Samsung - 128Mb DDR SDRAM
  2796. K4H560438C-TCA2 Samsung - 128Mb DDR SDRAM
  2797. K4H560438C-TCB0 Samsung - 128Mb DDR SDRAM
  2798. K4H560438C-TLA0 Samsung - 128Mb DDR SDRAM
  2799. K4H560438C-TLA2 Samsung - 128Mb DDR SDRAM
  2800. K4H560438C-TLB0 Samsung - 128Mb DDR SDRAM
  2801. K4H560438D Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2802. K4H560438D-GC Samsung - Ddr 256mb
  2803. K4H560438D-GCA2 Samsung - DDR 256Mb
  2804. K4H560438D-GCB0 Samsung - DDR 256Mb
  2805. K4H560438D-GCB3 Samsung - DDR 256Mb
  2806. K4H560438D-GLA2 Samsung - DDR 256Mb
  2807. K4H560438D-GLB0 Samsung - DDR 256Mb
  2808. K4H560438D-GLB3 Samsung - DDR 256Mb
  2809. K4H560438D-NC Samsung - 256mb Stsopii
  2810. K4H560438D-TC Samsung - 256mb
  2811. K4H560438D-TCA0 Samsung - 128Mb DDR SDRAM
  2812. K4H560438D-TCA2 Samsung - 128Mb DDR SDRAM
  2813. K4H560438D-TCB0 Samsung - 128Mb DDR SDRAM
  2814. K4H560438D-TC/LA0 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2815. K4H560438D-TC/LA2 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2816. K4H560438D-TC/LB0 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2817. K4H560438D-TC/LB3 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2818. K4H560438D-TLA0 Samsung - 128Mb DDR SDRAM
  2819. K4H560438D-TLA2 Samsung - 128Mb DDR SDRAM
  2820. K4H560438D-TLB0 Samsung - 128Mb DDR SDRAM
  2821. K4H560438E Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2822. K4H560438E-GC Samsung - 256mb E-die Ddr Sdram Specification 60ball Fbga (x4/x8)
  2823. K4H560438E-GCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2824. K4H560438E-GCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2825. K4H560438E-GCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2826. K4H560438E-GCC4 Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2827. K4H560438E-GCCC Samsung - 256mb E-die Ddr 400 Sdram Specification 60ball Fbga (x4/x8)
  2828. K4H560438E-GLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2829. K4H560438E-GLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2830. K4H560438E-GLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2831. K4H560438E-NC Samsung - 256mb E-die Ddr Sdram Specification 54pin Stsop(ii)
  2832. K4H560438E-NCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2833. K4H560438E-NCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2834. K4H560438E-NCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2835. K4H560438E-NLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2836. K4H560438E-NLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2837. K4H560438E-NLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2838. K4H560438E-TC Samsung - 256mb E-die Ddr Sdram Specification 66 Tsop-ii
  2839. K4H560438E-TCA0 Samsung - 128Mb DDR SDRAM
  2840. K4H560438E-TCA2 Samsung - 128Mb DDR SDRAM
  2841. K4H560438E-TCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2842. K4H560438E-TCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2843. K4H560438E-TCB0 Samsung - 128Mb DDR SDRAM
  2844. K4H560438E-TCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2845. K4H560438E-TCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2846. K4H560438E-TC/LA2 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2847. K4H560438E-TC/LAA Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2848. K4H560438E-TC/LB0 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2849. K4H560438E-TC/LB3 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2850. K4H560438E-TLA0 Samsung - 128Mb DDR SDRAM
  2851. K4H560438E-TLA2 Samsung - 128Mb DDR SDRAM
  2852. K4H560438E-TLA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2853. K4H560438E-TLAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2854. K4H560438E-TLB0 Samsung - 128Mb DDR SDRAM
  2855. K4H560438E-TLB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2856. K4H560438E-TLB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2857. K4H560438E-UC Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2858. K4H560438E-UCA2 Samsung - 256mb E-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2859. K4H560438E-UCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2860. K4H560438E-UCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2861. K4H560438E-UCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2862. K4H560438E-ULA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2863. K4H560438E-ULAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2864. K4H560438E-ULB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2865. K4H560438E-ULB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2866. K4H560438E-VC Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2867. K4H560438E-VCA2 Samsung - 256mb E-die Ddr Sdram Specification 54 Stsop-ii With Pb-free (rohs Compliant)
  2868. K4H560438E-VCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2869. K4H560438E-VCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2870. K4H560438E-VLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2871. K4H560438E-VLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2872. K4H560438E-VLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2873. K4H560438E-ZC Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2874. K4H560438E-ZCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2875. K4H560438E-ZCB0 Samsung - 256mb E-die Ddr Sdram Specification 60 Fbga With Pb-free (rohs Compliant)
  2876. K4H560438E-ZCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2877. K4H560438E-ZLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2878. K4H560438E-ZLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2879. K4H560438E-ZLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2880. K4H560438M-TCA0 Samsung - 128Mb DDR SDRAM
  2881. K4H560438M-TCA2 Samsung - 128Mb DDR SDRAM
  2882. K4H560438M-TCB0 Samsung - 128Mb DDR SDRAM
  2883. K4H560438M-TLA0 Samsung - 128Mb DDR SDRAM
  2884. K4H560438M-TLA2 Samsung - 128Mb DDR SDRAM
  2885. K4H560438M-TLB0 Samsung - 128Mb DDR SDRAM
  2886. K4H560838A-TCA0 Samsung - 128Mb DDR SDRAM
  2887. K4H560838A-TCA2 Samsung - 128Mb DDR SDRAM
  2888. K4H560838A-TCB0 Samsung - 128Mb DDR SDRAM
  2889. K4H560838A-TLA0 Samsung - 128Mb DDR SDRAM
  2890. K4H560838A-TLA2 Samsung - 128Mb DDR SDRAM
  2891. K4H560838A-TLB0 Samsung - 128Mb DDR SDRAM
  2892. K4H560838B Samsung - 128Mb DDR SDRAM
  2893. K4H560838B-TCA0 Samsung - 128Mb DDR SDRAM
  2894. K4H560838B-TCA2 Samsung - 128Mb DDR SDRAM
  2895. K4H560838B-TCB0 Samsung - 128Mb DDR SDRAM
  2896. K4H560838B-TLA0 Samsung - 128Mb DDR SDRAM
  2897. K4H560838B-TLA2 Samsung - 128Mb DDR SDRAM
  2898. K4H560838B-TLB0 Samsung - 128Mb DDR SDRAM
  2899. K4H560838C Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2900. K4H560838C-CA2 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2901. K4H560838C-CB3 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2902. K4H560838C-LA2 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2903. K4H560838C-LB3 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2904. K4H560838C-TCA0 Samsung - 128Mb DDR SDRAM
  2905. K4H560838C-TCA2 Samsung - 128Mb DDR SDRAM
  2906. K4H560838C-TCB0 Samsung - 128Mb DDR SDRAM
  2907. K4H560838C-TLA0 Samsung - 128Mb DDR SDRAM
  2908. K4H560838C-TLA2 Samsung - 128Mb DDR SDRAM
  2909. K4H560838C-TLB0 Samsung - 128Mb DDR SDRAM
  2910. K4H560838D Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2911. K4H560838D-GCA2 Samsung - DDR 256Mb
  2912. K4H560838D-GCB0 Samsung - DDR 256Mb
  2913. K4H560838D-GCB3 Samsung - DDR 256Mb
  2914. K4H560838D-GLA2 Samsung - DDR 256Mb
  2915. K4H560838D-GLB0 Samsung - DDR 256Mb
  2916. K4H560838D-GLB3 Samsung - DDR 256Mb
  2917. K4H560838D-TCA0 Samsung - 128Mb DDR SDRAM
  2918. K4H560838D-TCA2 Samsung - 128Mb DDR SDRAM
  2919. K4H560838D-TCB0 Samsung - 128Mb DDR SDRAM
  2920. K4H560838D-TCC4 Samsung - 256Mb D-die DDR400 SDRAM Specification
  2921. K4H560838D-TCCC Samsung - 256Mb D-die DDR400 SDRAM Specification
  2922. K4H560838D-TC/LA0 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2923. K4H560838D-TC/LA2 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2924. K4H560838D-TC/LB0 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2925. K4H560838D-TC/LB3 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2926. K4H560838D-TLA0 Samsung - 128Mb DDR SDRAM
  2927. K4H560838D-TLA2 Samsung - 128Mb DDR SDRAM
  2928. K4H560838D-TLB0 Samsung - 128Mb DDR SDRAM
  2929. K4H560838E Samsung - DDR SDRAM 256Mb E-die (x4, x8)
  2930. K4H560838E-GCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2931. K4H560838E-GCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2932. K4H560838E-GCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2933. K4H560838E-GCC4 Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2934. K4H560838E-GCCC Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2935. K4H560838E-GLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2936. K4H560838E-GLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2937. K4H560838E-GLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2938. K4H560838E-NCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2939. K4H560838E-NCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2940. K4H560838E-NCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2941. K4H560838E-NLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2942. K4H560838E-NLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2943. K4H560838E-NLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2944. K4H560838E-TCA0 Samsung - 128Mb DDR SDRAM
  2945. K4H560838E-TCA2 Samsung - 128Mb DDR SDRAM
  2946. K4H560838E-TCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2947. K4H560838E-TCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2948. K4H560838E-TCB0 Samsung - 128Mb DDR SDRAM
  2949. K4H560838E-TCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2950. K4H560838E-TCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2951. K4H560838E-TC/LA2 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2952. K4H560838E-TC/LAA Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2953. K4H560838E-TC/LB0 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2954. K4H560838E-TC/LB3 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2955. K4H560838E-TLA0 Samsung - 128Mb DDR SDRAM
  2956. K4H560838E-TLA2 Samsung - 128Mb DDR SDRAM
  2957. K4H560838E-TLA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2958. K4H560838E-TLAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2959. K4H560838E-TLB0 Samsung - 128Mb DDR SDRAM
  2960. K4H560838E-TLB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2961. K4H560838E-TLB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2962. K4H560838E-UCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2963. K4H560838E-UCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2964. K4H560838E-UCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2965. K4H560838E-UCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2966. K4H560838E-ULA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2967. K4H560838E-ULAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2968. K4H560838E-ULB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2969. K4H560838E-ULB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2970. K4H560838E-VCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2971. K4H560838E-VCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2972. K4H560838E-VCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2973. K4H560838E-VLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2974. K4H560838E-VLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2975. K4H560838E-VLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2976. K4H560838E-ZCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2977. K4H560838E-ZCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2978. K4H560838E-ZCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2979. K4H560838E-ZLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2980. K4H560838E-ZLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2981. K4H560838E-ZLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2982. K4H560838F Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2983. K4H560838F-TC Samsung - 256mb F-die Ddr400 Sdram Specification
  2984. K4H560838F-TCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  2985. K4H560838F-TCCC Samsung - 256Mb F-die DDR400 SDRAM Specification
  2986. K4H560838F-TC/LA2 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2987. K4H560838F-TC/LAA Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2988. K4H560838F-TC/LB0 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2989. K4H560838F-TC/LB3 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2990. K4H560838F-UCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  2991. K4H560838F-UCCC Samsung - 256mb F-die Ddr400 Sdram Specification
  2992. K4H560838M-TCA0 Samsung - 128Mb DDR SDRAM
  2993. K4H560838M-TCA2 Samsung - 128Mb DDR SDRAM
  2994. K4H560838M-TCB0 Samsung - 128Mb DDR SDRAM
  2995. K4H560838M-TLA0 Samsung - 128Mb DDR SDRAM
  2996. K4H560838M-TLA2 Samsung - 128Mb DDR SDRAM
  2997. K4H560838M-TLB0 Samsung - 128Mb DDR SDRAM
  2998. K4H561638A-TCA0 Samsung - 128Mb DDR SDRAM
  2999. K4H561638A-TCA2 Samsung - 128Mb DDR SDRAM
  3000. K4H561638A-TCB0 Samsung - 128Mb DDR SDRAM