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Components list, symbol «K», page 1

  1. K-02803G-P Неопределенные - Lcd Back Light, Cob Type, Lcd Character 240 X 128
  2. K-03203GX Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 16��1(L)
  3. K-04204GX Неопределенные - Lcd Back Light, Cob Type, Lcd Character 16��1(l)
  4. K-04211GX-P Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 20 X 2, 16 X 4
  5. K-05205GX Неопределенные - Lcd Back Light, Cob Type, Lcd Character 20 X 2, 16 X 4
  6. K1 Неопределенные - KS Series KEY SWITCHES
  7. K102P Неопределенные - Optically Coupled Isolator
  8. K102P1 Неопределенные - Optically Coupled Isolator
  9. K102P2 Неопределенные - Optically Coupled Isolator
  10. K102P3 Неопределенные - Optically Coupled Isolator
  11. K105 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  12. K100S Неопределенные - 2,500V - 10,000V Rectifiers
  13. K110 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  14. K120 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  15. K130 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  16. K150 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  17. K1536BLC Неопределенные - Low Cost Surface Mount Vcxos
  18. K1536BLCM Неопределенные - LOW COST SURFACE MOUNT VCXOS
  19. K155 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  20. K155NA1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  21. K155NA2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  22. K155NA3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  23. K155NA4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  24. K155NA6 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  25. K155NA7 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  26. K155NA8 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  27. K155NE1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  28. K155NE2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  29. K155NE4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  30. K155NE5 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  31. K155NH1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  32. K155NM1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  33. K155NM2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  34. K155NM3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  35. K155NP1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  36. K155NP3 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  37. K155NP4 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  38. K155TB1 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  39. K155TM2 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  40. K155TM5 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  41. K155TM7 Неопределенные - OCHBHBLE 3NEKTPNYECKNE NAPAMETPBI BASIC SPECIFICATIONS
  42. K1603T Неопределенные - 14 DIP, 5.0 Volt, CMOS/TTL, TCXO
  43. K1603TE Неопределенные - 14 DIP, 5.0 Volt, CMOS/TTL, TCXO
  44. K139 Неопределенные - Diy Kit 139. Stereo 1w Audio Amplifier With Dc Volume Control
  45. K140 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  46. K1745 Неопределенные - 2SK1745
  47. K176 Неопределенные - MOS-Intergrated Microcircuits
  48. K176TM1 Неопределенные - Mos-intergrated Microcircuits
  49. K176TM2 Неопределенные - MOS-Intergrated Microcircuits
  50. K-18001GX-P Неопределенные - LCD BACK LIGHT, COB TYPE, LCD CHARACTER 240 X 128
  51. K2 Неопределенные - KS Series KEY SWITCHES
  52. K200 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  53. K2011 Неопределенные - If Filter For Intercarrier Application (if= 38.0 Mhz. Standard B/g-ccir, D/k-oirt)
  54. K220 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  55. K220 Неопределенные - Contractor Flashlight
  56. K240 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  57. K250 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  58. K25S Неопределенные - 2,500V - 10,000V Rectifiers
  59. K2971M Неопределенные - If Filter For Intercarrier Applications
  60. K3NR Неопределенные - High-speed, Intelligent Interface Modules
  61. K3NR-NB1A Неопределенные - High-speed, Intelligent Interface Modules
  62. K3NR-NB1C Неопределенные - High-speed, Intelligent Interface Modules
  63. K3NR-NB2A Неопределенные - High-speed, Intelligent Interface Modules
  64. K3NR-NB2C Неопределенные - High-speed, Intelligent Interface Modules
  65. K3NR-PB1A Неопределенные - High-speed, Intelligent Interface Modules
  66. K3NR-PB1C Неопределенные - High-speed, Intelligent Interface Modules
  67. K3NR-PB2A Неопределенные - High-speed, Intelligent Interface Modules
  68. K3NR-PB2C Неопределенные - High-speed, Intelligent Interface Modules
  69. K3 Неопределенные - KS Series KEY SWITCHES
  70. K300 Неопределенные - Silicon Bilateral Voltage Triggered Switch
  71. K3X13AA Неопределенные - Sensor to Computer Interface Modules
  72. K3X13AX Неопределенные - Sensor to Computer Interface Modules
  73. K3X13HQ Неопределенные - Sensor to Computer Interface Modules
  74. K3X13LT Неопределенные - Sensor to Computer Interface Modules
  75. K4 Неопределенные - KS Series KEY SWITCHES
  76. K4032 Неопределенные - Vestigial Sideband Filter (if= 38,0 Mhz, Standard D, Full Transmission)
  77. K3010 COSMO - High Reliability Photo Coupler
  78. K2010 COSMO - High Reliability Photo Coupler
  79. K1010 COSMO - High Reliability Photo Coupler
  80. K1010A COSMO - Photocoupler, CTR 80 to 160%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  81. K1010B COSMO - Photocoupler, CTR 130 to 260%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  82. K1010C COSMO - Photocoupler, CTR 200 to 400%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  83. K1010D COSMO - Photocoupler, CTR 300 to 600%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  84. K1010E COSMO - Photocoupler, CTR 50 to 600%. For Registers, Copiers, Automatic Vending Machines, Communications, Telephone, Etc
  85. K015-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  86. K016-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  87. K017-000 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  88. K017-250 Eichhoff - Radio-interference Suppression Capacitors
  89. K018-000 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  90. K002-798 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  91. K005-600 Eichhoff - Spark Quenching Capacitors
  92. K005-601 Eichhoff - Spark Quenching Capacitors
  93. K005-650 Eichhoff - Spark Quenching Capacitors
  94. K006-006-500 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  95. K006-200 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  96. K006-600-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  97. K006-700 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  98. K006-700-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  99. K006-700-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  100. K006-700-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  101. K006-750-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  102. K006-750-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  103. K006-750-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  104. K006-800-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  105. K006-800-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  106. K006-800-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  107. K006-875-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  108. K006-875-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  109. K006-875-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  110. K006-900-500 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  111. K006-900-501 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  112. K006-900-504 Eichhoff - TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS
  113. K007-200 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  114. K008-050 Eichhoff - Two-pole Radio Interference Suppression Capacitors
  115. K009-200 Eichhoff - Four-pole Radio Interference Suppression Capacitors
  116. K009-550 Eichhoff - Foru-pole Radio Interference Suppression Capacitors
  117. K2955M EPCOS - IF Filter for Intercarrier Applications
  118. K08PN40 Fairchild - TRIAC (Silicon Bidirectional Thyristor)
  119. K08PN60 Fairchild - TRIAC (Silicon Bidirectional Thyristor)
  120. k246 Fuji - N-channel MOS-FET
  121. K1713 Hamamatsu - Two-color detector
  122. K1713-01 Hamamatsu - Two-color Detector
  123. K1713-02 Hamamatsu - Two-color detector
  124. K1713-05 Hamamatsu - Two-color detector
  125. K1713-08 Hamamatsu - Two-color Detector
  126. K1713-09 Hamamatsu - Two-color detector
  127. K3413-01 Hamamatsu - Two-color detector
  128. K3413-02 Hamamatsu - Two-color detector
  129. K3413-05 Hamamatsu - Two-color Detector
  130. K3413-08 Hamamatsu - Two-color detector
  131. K3413-09 Hamamatsu - Two-color detector
  132. K1773 Hitachi - Silicon N-Channel MOS FET
  133. K170 ICST - Low Emi Clock Generator
  134. K142 ICST - Opl3/4+codec Portable Clock Source
  135. K180 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  136. K150 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  137. K120 Knox - Low Level Zener Diodes Very Low Voltage, Low Leakage
  138. K240 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  139. K270 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  140. K210 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  141. K360 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  142. K390 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  143. K300 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  144. K330 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  145. K430 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  146. K470 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  147. K304 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  148. K401 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  149. K402 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  150. K302 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  151. K301 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  152. K404 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  153. K3610 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  154. K3611 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  155. K3620 Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  156. K3621 Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  157. K3630 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  158. K3631 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  159. K3640 Kodenshi - Photocoupler(these Photocouplers Cosist Of Two Gallium Arsenide Infrared Emitting)
  160. K3641 Kodenshi - Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting)
  161. K201 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  162. K202 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  163. K204 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  164. K101 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  165. K102 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  166. K104 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  167. K2160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  168. K2160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  169. K2160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  170. K2160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  171. K2160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  172. K2160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  173. K2160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  174. K2160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  175. K2160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  176. K2160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  177. K2160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  178. K2160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  179. K2160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  180. K2160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  181. K2160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  182. K2160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  183. K2160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  184. K2160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  185. K2160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  186. K2160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  187. K2160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  188. K2160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  189. K2160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  190. K2160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  191. K2160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  192. K2160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  193. K2180B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  194. K2180B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  195. K2180B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  196. K2180C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  197. K2180C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  198. K2180D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  199. K2180D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  200. K2180H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  201. K2180H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  202. K2180M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  203. K2180M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  204. K2180N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  205. K2180N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  206. K2180Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  207. K2180Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  208. K2180V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  209. K2180V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  210. K2180W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  211. K2180W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  212. K2180X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  213. K2180X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  214. K2180Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  215. K2180Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  216. K2180Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  217. K2180Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  218. K2180Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  219. K34100B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  220. K34100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  221. K34100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  222. K34100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  223. K34100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  224. K34100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  225. K34100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  226. K34100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  227. K34100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  228. K34100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  229. K34100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  230. K34100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  231. K34100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  232. K34100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  233. K34100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  234. K34100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  235. K34100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  236. K34100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  237. K34100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  238. K34100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  239. K34100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  240. K34100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  241. K34100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  242. K34100Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  243. K34100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  244. K34100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  245. K34120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  246. K34120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  247. K34120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  248. K34120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  249. K34120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  250. K34120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  251. K34120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  252. K34120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  253. K34120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  254. K34120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  255. K34120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  256. K34120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  257. K34120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  258. K34120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  259. K34120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  260. K34120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  261. K34120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  262. K34120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  263. K34120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  264. K34120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  265. K34120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  266. K34120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  267. K34120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  268. K34120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  269. K34120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  270. K34120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  271. K21100B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  272. K21100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  273. K21100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  274. K21100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  275. K21100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  276. K21100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  277. K21100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  278. K21100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  279. K21100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  280. K21100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  281. K21100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  282. K21100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  283. K21100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  284. K21100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  285. K21100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  286. K21100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  287. K21100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  288. K21100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  289. K21100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  290. K21100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  291. K21100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  292. K21100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  293. K21100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  294. K21100Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  295. K21100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  296. K21100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  297. K21120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  298. K21120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  299. K21120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  300. K21120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  301. K21120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  302. K21120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  303. K21120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  304. K21120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  305. K21120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  306. K21120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  307. K21120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  308. K21120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  309. K21120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  310. K21120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  311. K21120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  312. K21120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  313. K21120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  314. K21120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  315. K21120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  316. K21120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  317. K21120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  318. K21120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  319. K21120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  320. K21120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  321. K21120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  322. K21120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  323. K21160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  324. K21160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  325. K21160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  326. K21160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  327. K21160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  328. K21160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  329. K21160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  330. K21160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  331. K21160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  332. K21160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  333. K21160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  334. K21160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  335. K21160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  336. K21160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  337. K21160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  338. K21160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  339. K21160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  340. K21160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  341. K21160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  342. K21160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  343. K21160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  344. K21160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  345. K21160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  346. K21160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  347. K21160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  348. K21160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  349. K2120B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  350. K2120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  351. K2120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  352. K2120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  353. K2120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  354. K2120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  355. K2120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  356. K2120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  357. K2120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  358. K2120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  359. K2120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  360. K2120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  361. K2120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  362. K2120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  363. K2120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  364. K2120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  365. K2120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  366. K2120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  367. K2120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  368. K2120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  369. K2120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  370. K2120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  371. K2120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  372. K2120Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  373. K2120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  374. K2120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  375. K2140B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  376. K2140B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  377. K2140B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  378. K2140C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  379. K2140C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  380. K2140D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  381. K2140D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  382. K2140H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  383. K2140H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  384. K2140M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  385. K2140M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  386. K2140N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  387. K2140N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  388. K2140Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  389. K2140Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  390. K2140V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  391. K2140V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  392. K2140W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  393. K2140W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  394. K2140X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  395. K2140X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  396. K2140Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  397. K2140Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  398. K2140Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  399. K2140Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  400. K2140Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  401. K37100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  402. K37100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  403. K37100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  404. K37100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  405. K37100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  406. K37100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  407. K37100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  408. K37100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  409. K37100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  410. K37100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  411. K37100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  412. K37100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  413. K37100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  414. K37100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  415. K37100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  416. K37100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  417. K37100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  418. K37100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  419. K37100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  420. K37100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  421. K37100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  422. K37100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  423. K37100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  424. K37100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  425. K37120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  426. K37120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  427. K37120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  428. K37120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  429. K37120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  430. K37120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  431. K37120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  432. K37120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  433. K37120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  434. K37120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  435. K37120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  436. K37120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  437. K37120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  438. K37120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  439. K37120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  440. K37120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  441. K37120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  442. K37120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  443. K37120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  444. K37120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  445. K37120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  446. K37120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  447. K37120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  448. K37120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  449. K37160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  450. K37160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  451. K37160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  452. K37160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  453. K37160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  454. K37160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  455. K37160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  456. K37160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  457. K37160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  458. K37160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  459. K37160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  460. K37160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  461. K37160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  462. K37160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  463. K37160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  464. K37160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  465. K37160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  466. K37160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  467. K37160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  468. K37160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  469. K37160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  470. K37160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  471. K37160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  472. K37160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  473. K3720B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  474. K3720B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  475. K3720C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  476. K3720C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  477. K3720D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  478. K3720D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  479. K3720H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  480. K3720H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  481. K3720M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  482. K3720M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  483. K3720N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  484. K3720N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  485. K3720Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  486. K3720Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  487. K3720V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  488. K3720V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  489. K3720W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  490. K3720W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  491. K3720X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  492. K3720X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  493. K3720Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  494. K3720Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  495. K3720Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  496. K3720Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  497. K3740B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  498. K3740B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  499. K3740C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  500. K3740C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  501. K3740D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  502. K3740D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  503. K3740H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  504. K3740H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  505. K3740M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  506. K3740M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  507. K3740N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  508. K3740N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  509. K3740Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  510. K3740Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  511. K3740V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  512. K3740V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  513. K3740W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  514. K3740W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  515. K3740X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  516. K3740X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  517. K3740Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  518. K3740Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  519. K3740Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  520. K3740Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  521. K3760B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  522. K3760B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  523. K3760C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  524. K3760C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  525. K3760D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  526. K3760D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  527. K3760H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  528. K3760H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  529. K3760M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  530. K3760M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  531. K3760N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  532. K3760N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  533. K3760Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  534. K3760Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  535. K3760V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  536. K3760V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  537. K3760W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  538. K3760W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  539. K3760X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  540. K3760X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  541. K3760Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  542. K3760Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  543. K3760Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  544. K3760Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  545. K3780B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  546. K3780B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  547. K3780C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  548. K3780C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  549. K3780D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  550. K3780D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  551. K3780H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  552. K3780H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  553. K3780M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  554. K3780M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  555. K3780N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  556. K3780N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  557. K3780Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  558. K3780Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  559. K3780V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  560. K3780V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  561. K3780W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  562. K3780W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  563. K3780X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  564. K3780X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  565. K3780Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  566. K3780Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  567. K3780Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  568. K3780Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  569. K34160B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  570. K34160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  571. K34160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  572. K34160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  573. K34160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  574. K34160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  575. K34160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  576. K34160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  577. K34160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  578. K34160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  579. K34160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  580. K34160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  581. K34160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  582. K34160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  583. K34160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  584. K34160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  585. K34160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  586. K34160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  587. K34160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  588. K34160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  589. K34160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  590. K34160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  591. K34160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  592. K34160Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  593. K34160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  594. K34160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  595. K3420B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  596. K3420B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  597. K3420B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  598. K3420C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  599. K3420C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  600. K3420D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  601. K3420D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  602. K3420H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  603. K3420H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  604. K3420M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  605. K3420M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  606. K3420N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  607. K3420N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  608. K3420Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  609. K3420Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  610. K3420V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  611. K3420V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  612. K3420W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  613. K3420W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  614. K3420X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  615. K3420X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  616. K3420Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  617. K3420Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  618. K3420Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  619. K3420Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  620. K3420Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  621. K3440B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  622. K3440B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  623. K3440B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  624. K3440C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  625. K3440C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  626. K3440D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  627. K3440D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  628. K3440H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  629. K3440H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  630. K3440M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  631. K3440M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  632. K3440N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  633. K3440N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  634. K3440Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  635. K3440Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  636. K3440V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  637. K3440V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  638. K3440W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  639. K3440W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  640. K3440X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  641. K3440X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  642. K3440Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  643. K3440Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  644. K3440Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  645. K3440Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  646. K3440Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  647. K3460B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  648. K3460B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  649. K3460B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  650. K3460C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  651. K3460C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  652. K3460D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  653. K3460D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  654. K3460H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  655. K3460H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  656. K3460M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  657. K3460M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  658. K3460N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  659. K3460N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  660. K3460Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  661. K3460Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  662. K3460V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  663. K3460V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  664. K3460W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  665. K3460W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  666. K3460X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  667. K3460X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  668. K3460Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  669. K3460Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  670. K3460Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  671. K3460Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  672. K3460Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  673. K3480B1EB1 Microsemi - Single Phase Bridge, Package : See_factory
  674. K3480B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  675. K3480B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  676. K3480C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  677. K3480C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  678. K3480D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  679. K3480D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  680. K3480H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  681. K3480H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  682. K3480M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  683. K3480M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  684. K3480N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  685. K3480N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  686. K3480Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  687. K3480Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  688. K3480V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  689. K3480V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  690. K3480W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  691. K3480W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  692. K3480X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  693. K3480X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  694. K3480Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  695. K3480Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  696. K3480Z1EB1 Microsemi - 3 Phase Bridge, Package : See_factory
  697. K3480Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  698. K3480Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  699. K43100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  700. K43100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  701. K43100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  702. K43100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  703. K43100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  704. K43100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  705. K43100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  706. K43100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  707. K43100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  708. K43100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  709. K43100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  710. K43100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  711. K43100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  712. K43100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  713. K43100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  714. K43100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  715. K43100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  716. K43100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  717. K43100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  718. K43100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  719. K43100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  720. K43100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  721. K43100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  722. K43100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  723. K43120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  724. K43120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  725. K43120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  726. K43120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  727. K43120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  728. K43120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  729. K43120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  730. K43120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  731. K43120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  732. K43120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  733. K43120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  734. K43120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  735. K43120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  736. K43120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  737. K43120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  738. K43120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  739. K43120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  740. K43120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  741. K43120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  742. K43120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  743. K43120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  744. K43120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  745. K43120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  746. K43120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  747. K43160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  748. K43160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  749. K43160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  750. K43160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  751. K43160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  752. K43160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  753. K43160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  754. K43160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  755. K43160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  756. K43160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  757. K43160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  758. K43160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  759. K43160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  760. K43160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  761. K43160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  762. K43160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  763. K43160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  764. K43160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  765. K43160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  766. K43160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  767. K43160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  768. K43160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  769. K43160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  770. K43160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  771. K4320B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  772. K4320B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  773. K4320C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  774. K4320C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  775. K4320D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  776. K4320D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  777. K4320H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  778. K4320H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  779. K4320M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  780. K4320M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  781. K4320N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  782. K4320N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  783. K4320Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  784. K4320Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  785. K4320V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  786. K4320V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  787. K4320W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  788. K4320W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  789. K4320X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  790. K4320X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  791. K4320Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  792. K4320Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  793. K4320Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  794. K4320Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  795. K4340B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  796. K4340B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  797. K4340C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  798. K4340C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  799. K4340D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  800. K4340D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  801. K4340H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  802. K4340H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  803. K4340M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  804. K4340M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  805. K4340N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  806. K4340N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  807. K4340Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  808. K4340Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  809. K4340V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  810. K4340V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  811. K4340W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  812. K4340W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  813. K4340X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  814. K4340X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  815. K4340Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  816. K4340Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  817. K4340Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  818. K4340Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  819. K4360B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  820. K4360B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  821. K4360C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  822. K4360C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  823. K4360D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  824. K4360D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  825. K4360H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  826. K4360H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  827. K4360M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  828. K4360M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  829. K4360N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  830. K4360N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  831. K4360Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  832. K4360Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  833. K4360V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  834. K4360V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  835. K4360W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  836. K4360W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  837. K4360X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  838. K4360X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  839. K4360Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  840. K4360Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  841. K4360Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  842. K4360Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  843. K4380B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  844. K4380B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  845. K4380C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  846. K4380C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  847. K4380D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  848. K4380D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  849. K4380H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  850. K4380H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  851. K4380M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  852. K4380M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  853. K4380N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  854. K4380N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  855. K4380Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  856. K4380Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  857. K4380V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  858. K4380V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  859. K4380W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  860. K4380W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  861. K4380X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  862. K4380X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  863. K4380Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  864. K4380Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  865. K4380Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  866. K4380Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  867. K3-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  868. K3-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  869. K3-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  870. K3-ERASM Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  871. K3-GALI_GVA+ Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  872. K3-GAT+ Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  873. K3-LFCN+ Mini-Circuits - KIT FILTER / SURF MT/T&R/ RoHS
  874. K2-BW1+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  875. K2-BW2+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  876. K2-BW3+ Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  877. K2-DBTC Mini-Circuits - KIT DIR COUP / SURF MOUNT/RoHS
  878. K2-ERA Mini-Circuits - KIT ML AMPL / Sn
  879. K2-GAT Mini-Circuits - KIT FXD ATTEN / SURF MOUNT
  880. K2-HAT Mini-Circuits - KIT FXD ATTEN / BNC
  881. K2-HAT+ Mini-Circuits - KIT FXD ATTEN / BNC / RoHS
  882. K2-HFCN+ Mini-Circuits - KIT HI PAS FLTR / SURF MT/RoHS
  883. K2-LFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  884. K2-MNA Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  885. K2-PAT+ Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  886. K2-SBTC+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  887. K2-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  888. K2-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  889. K2-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  890. K2-VAT2+ Mini-Circuits - KIT DIR COUP / SURF MT / RoHS
  891. K1-VAT Mini-Circuits - KIT FXD SS ATTEN / SMA
  892. K1-VAT+ Mini-Circuits - KIT FXD SS ATTEN / SMA / RoHS
  893. K1-VAT2 Mini-Circuits - KIT FXD SS ATTEN / SMA
  894. K1-VAT2+ Mini-Circuits - KIT PWR SPLTR CMBD / SMA/ RoHS
  895. K1-ADP+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  896. K1-SBTC+ Mini-Circuits - KIT PWR SPLTR CMBD / SM / RoHS
  897. K1-DBTC Mini-Circuits - KIT DIR COUP / SURF MT / RoHS
  898. K1-ERA Mini-Circuits - KIT ML AMPL / Sn
  899. K1-ERASM Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  900. K1-GAT+ Mini-Circuits - KIT FXD ATTEN / SURF MOUNT
  901. K1-HAT Mini-Circuits - KIT FXD ATTEN / BNC
  902. K1-HAT+ Mini-Circuits - KIT FXD ATTEN / BNC / RoHS
  903. K1-HFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  904. K1-LAT Mini-Circuits - KIT FXD ATTEN / SURF MT / RoHS
  905. K1-LAVI+ Mini-Circuits - KIT DBL BAL MIX / SURF MT/RoHS
  906. K1-LEE Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  907. K1-LFCN Mini-Circuits - KIT FILTER / SURF MOUNT / RoHS
  908. K1-MAN Mini-Circuits - KIT BROADBAND AMPL
  909. K1-MNA Mini-Circuits - KIT MONOLITHIC AMPL / SURF MT
  910. K1-PAT Mini-Circuits - KIT FXD ATTEN / SURF MT / Sn
  911. K4-DBTC-75L+ Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  912. k246 NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  913. K2141 NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
  914. K3296 NEC - MOS FIELD EFFECT TRANSISTOR
  915. K02C National Semiconductor - Metal Can, To-3 2 Lead Low Profile
  916. K2740 Rohm - Switching (600V, 7A)
  917. k246 Rohm - Small switching (60V, 2A)
  918. K1S161611A Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  919. K1S161611A-I Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  920. K1S16161CA Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
  921. K1S16161CA-I Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
  922. K1S1616B1A Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  923. K1S1616B1A-BI70 Samsung - 1mx16 Bit Uni-transistor Random Access Memory
  924. K1S1616B1A-BI85 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  925. K1S1616B1A-FI70 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  926. K1S1616B1A-FI85 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  927. K1S1616B1A-I Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
  928. K1S1616BCA Samsung - 1mx16 Bit Page Mode Uni-transistor Random Access Memory
  929. K1S1616BCA-I Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access MemoryThe K1S1616BCA is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  930. K1S2816BCM Samsung - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  931. K1S2816BCM-I Samsung - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  932. K1S321611C Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  933. K1S321611C-FI70 Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  934. K1S321611C-I Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  935. K1S321615M Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  936. K1S321615M-E Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  937. K1S3216B1C Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
  938. K1S3216B1C-I Samsung - 2mx16 Bit Uni-transistor Random Access Memory
  939. K1S3216BCC Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  940. K1S3216BCC-FI70 Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  941. K1S3216BCC-FI85 Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  942. K1S3216BCD Samsung - 2mx16 Bit Page Mode Uni-transistor Random Access Memory
  943. K1S3216BCD-I Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCD is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
  944. K1S64161CC Samsung - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
  945. K1S64161CC-I Samsung - 4M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S64161CC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
  946. K1S6416BCC Samsung - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
  947. K1S6416BCC-I Samsung - 4Mx16 bit Page Mode Uni-Transistor Random Access Memory
  948. K1B3216B7D Samsung - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance feature.
  949. K1B3216BDD Samsung - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  950. K1B5616BAM Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  951. K1B5616BAM-I Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  952. K1B5616BBM Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  953. K1B5616BBM-I Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  954. K1B6416B6C Samsung - 4mx16 Bit Synchronous Burst Uni-transistor Random Access Memory
  955. K1B6416B6C-I Samsung - 4M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
  956. K3N3C1000D Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  957. K3N3C1000D-DC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  958. K3N3C1000D-DGC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  959. K3N3C1000D-GC Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  960. K3N3C1000D-TCE Samsung - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  961. K3N3C3000D Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  962. K3N3C3000D-DGC Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  963. K3N3C3000D-GC Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  964. K3N3C3000D-YCE Samsung - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  965. K3N3C6000D Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  966. K3N3C6000D-DC Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  967. K3N3C6000D-DC08 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  968. K3N3C6000D-DC10 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  969. K3N3C6000D-DC12 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
  970. K3N3U1000D Samsung - K3N3U1000D,K3N3V1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  971. K3N3U3000D Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  972. K3N3U3000D-AC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  973. K3N3U3000D-AE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  974. K3N3U3000D-DC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  975. K3N3U3000D-YC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  976. K3N3U3000D-YE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  977. K3N3V1000D Samsung - K3N3U1000D, K3N3V1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  978. K3N3V3000D Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  979. K3N3V3000D-AC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  980. K3N3V3000D-AE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  981. K3N3V3000D-GC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  982. K3N3V3000D-YC Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  983. K3N3V3000D-YE Samsung - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  984. K3N3V6000D Samsung - K3N3V6000D 4M-Bit (256K X 16) CMOS Mask ROM(ePROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 40DIP ; Current (mA/uA) = 20,25/30 ; Production Status = Eol ; Comments = EPROM Type
  985. K3N4C1000D Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  986. K3N4C1000D-DC Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  987. K3N4C1000D-DG Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  988. K3N4C1000D-TC Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  989. K3N4C1000D-TCE Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  990. K3N4C1000D-TE Samsung - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  991. K3N4C1000E Samsung - K3N4C1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  992. K3N4C3000D Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  993. K3N4C3000D-DC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  994. K3N4C3000D-DGC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  995. K3N4C3000D-GC Samsung - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  996. K3N4U1000D Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  997. K3N4U1000D-DGC Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  998. K3N4U1000D-TCE Samsung - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  999. K3N4U3000D Samsung - K3N4U3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1000. K3N4U3000D-DGC Samsung - K3N4U3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1001. K3N4V1000D Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1002. K3N4V1000D-DGC Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1003. K3N4V1000D-TCE Samsung - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
  1004. K3N4V1000E Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1005. K3N4V1000E-DC10 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1006. K3N4V1000E-DC12 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1007. K3N4V1000E-GC10 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1008. K3N4V1000E-GC12 Samsung - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
  1009. K3N4V3000D Samsung - K3N4V3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1010. K3N4V3000D-DGC Samsung - K3N4V3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
  1011. K3N5C1000D Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1012. K3N5C1000D-DC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1013. K3N5C1000D-DGC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1014. K3N5C1000D-GC Samsung - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1015. K3N5C1000E Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1016. K3N5C1000E-TC Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1017. K3N5C1000E-TC10 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1018. K3N5C1000E-TC12 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1019. K3N5C1000E-TC15 Samsung - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1020. K3N5U1000D Samsung - K3N5U1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1021. K3N5U1000E Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1022. K3N5U1000E-DC12 Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1023. K3N5U1000E-GC12 Samsung - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1024. K3N5U1000F Samsung - K3N5U1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1025. K3N5V1000D Samsung - K3N5V1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1026. K3N5V1000E Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1027. K3N5V1000E-DC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1028. K3N5V1000E-DC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1029. K3N5V1000E-GC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1030. K3N5V1000E-GC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1031. K3N5V1000F Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1032. K3N5V1000F-DC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1033. K3N5V1000F-DC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1034. K3N5V1000F-GC10 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1035. K3N5V1000F-GC12 Samsung - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1036. K3N6C1000C Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1037. K3N6C1000C-GC Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1038. K3N6C1000C-TC Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1039. K3N6C1000C-TCE Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1040. K3N6C1000C-TE Samsung - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1041. K3N6C1000E Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1042. K3N6C1000E-TC Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1043. K3N6C1000E-TC10 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1044. K3N6C1000E-TC12 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1045. K3N6C1000E-TC15 Samsung - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1046. K3N6C1000F Samsung - K3N6C1000F 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  1047. K3N6C1000F-C Samsung - K3N6C1000F 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
  1048. K3N6C3000C Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1049. K3N6C3000C-DC Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1050. K3N6C3000C-DC10 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1051. K3N6C3000C-DC12 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1052. K3N6C3000C-DC15 Samsung - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1053. K3N6C3000E Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1054. K3N6C3000E-DC Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1055. K3N6C3000E-DC10 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1056. K3N6C3000E-DC12 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1057. K3N6C3000E-DC15 Samsung - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1058. K3N6C4000C Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1059. K3N6C4000C-DC Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1060. K3N6C4000C-DC10 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1061. K3N6C4000C-DC12 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1062. K3N6C4000C-DC15 Samsung - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1063. K3N6C4000E Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1064. K3N6C4000E-DC Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1065. K3N6C4000E-DC10 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1066. K3N6C4000E-DC12 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1067. K3N6C4000E-DC15 Samsung - K3N6C4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1068. K3N6S1000D Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1069. K3N6S1000D-YC Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1070. K3N6S1000D-YCE Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1071. K3N6S1000D-YE Samsung - K3N6S1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 30/50 ; Production Status = Eol ; Comments = -
  1072. K3N6U1000C Samsung - K3N6U1000C / K3N6V1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8/2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1073. K3N6U1000D Samsung - K3N6U1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 150 ; Package = 48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1074. K3N6U1000E Samsung - K3N6U1000E 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1075. K3N6U1000E-GC12 Samsung - K3N6U1000E 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1076. K3N6U1000F Samsung - K3N6U1000F / K3N6V1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1077. K3N6U4000C Samsung - K3N6U4000C / K3N6V4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 150 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1078. K3N6U4000E Samsung - K3N6U4000E / K3N6V4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1079. K3N6U4000E-DC12 Samsung - K3N6U4000E / K3N6V4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1080. K3N6V1000C Samsung - K3N6V1000C / K3N6U1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8/2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 10(50pF) ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1081. K3N6V1000D Samsung - K3N6V1000D 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1082. K3N6V1000E Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1083. K3N6V1000E-GC10 Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1084. K3N6V1000E-GC12 Samsung - K3N6V1000E / K3N6U1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1085. K3N6V1000F Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1086. K3N6V1000F-GC10 Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1087. K3N6V1000F-GC12 Samsung - K3N6V1000F / K3N6U1000F 32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = -
  1088. K3N6V4000C Samsung - K3N6V4000C / K3N6U4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
  1089. K3N6V4000E Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1090. K3N6V4000E-DC10 Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1091. K3N6V4000E-DC12 Samsung - K3N6V4000E / K3N6U4000E 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF),120 ; Package = 42DIP ; Current (mA/uA) = 40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1092. K3N7C1000B Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1093. K3N7C1000B-GC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1094. K3N7C1000B-TC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1095. K3N7C1000B-YC Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1096. K3N7C1000B-YC10 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1097. K3N7C1000B-YC12 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1098. K3N7C1000B-YC15 Samsung - K3N7C1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1099. K3N7C1000C Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1100. K3N7C1000C-GC Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1101. K3N7C1000C-GC10 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1102. K3N7C1000C-GC12 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1103. K3N7C1000C-GC15 Samsung - K3N7C1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1104. K3N7C1000M Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1105. K3N7C1000M-GC Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1106. K3N7C1000M-TC Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1107. K3N7C1000M-TC12 Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1108. K3N7C1000M-TC15 Samsung - K3N7C1000M 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1109. K3N7C3000M Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1110. K3N7C3000M-DC Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1111. K3N7C3000M-DC12 Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1112. K3N7C3000M-DC15 Samsung - K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1113. K3N7C4000B Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1114. K3N7C4000B-DC Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1115. K3N7C4000B-DC10 Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1116. K3N7C4000B-DC12 Samsung - K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Mass Production ; Comments = -
  1117. K3N7C4000C Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1118. K3N7C4000C-DC Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1119. K3N7C4000C-DC10 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1120. K3N7C4000C-DC12 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1121. K3N7C4000C-DC15 Samsung - K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1122. K3N7C4000M Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1123. K3N7C4000M-DC Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1124. K3N7C4000M-DC12 Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1125. K3N7C4000M-DC15 Samsung - K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 70 ; Production Status = Eol ; Comments = -
  1126. K3N7U1000A Samsung - K3N7U1000A 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1127. K3N7U1000B Samsung - K3N7U1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1128. K3N7U1000B-YC12 Samsung - K3N7U1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1129. K3N7U1000C Samsung - K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1130. K3N7U1000C-GC12 Samsung - K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1131. K3N7U4000B Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1132. K3N7U4000B-DC Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1133. K3N7U4000B-DC12 Samsung - K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 40 ; Production Status = Mass Production ; Comments = -
  1134. K3N7U4000C Samsung - K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1135. K3N7U4000C-DC12 Samsung - K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1136. K3N7V1000A Samsung - K3N7V1000A 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1137. K3N7V1000B Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1138. K3N7V1000B-YC10 Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1139. K3N7V1000B-YC12 Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1140. K3N7V1000C Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1141. K3N7V1000C-GC10 Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1142. K3N7V1000C-GC12 Samsung - K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8/4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1143. K3N7V4000B Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1144. K3N7V4000B-DC Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1145. K3N7V4000B-DC10 Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1146. K3N7V4000B-DC12 Samsung - K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
  1147. K3N7V4000C Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1148. K3N7V4000C-DC10 Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1149. K3N7V4000C-DC12 Samsung - K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ; Organization = 4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 35,40/30 ; Production Status = Eol ; Comments = -
  1150. K3N9U1000A Samsung - K3N9U1000A 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1151. K3N9U1000A-YC12 Samsung - K3N9U1000A 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1152. K3N9U1000M Samsung - K3N9U1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 48 TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1153. K3N9U4000A Samsung - K3N9U4000A 128M-Bit (8M X 16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1154. K3N9U4000A-GC12 Samsung - K3N9U4000A 128M-Bit (8M X 16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 120 ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1155. K3N9V1000A Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1156. K3N9V1000A-YC10 Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1157. K3N9V1000A-YC12 Samsung - K3N9V1000A 128M-Bit (16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1158. K3N9V1000M Samsung - K3N9V1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1159. K3N9V1000M-YCK3N9U1000M-YC Samsung - K3N9V1000M 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 48TSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1160. K3N9V4000A Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1161. K3N9V4000A-GC10 Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1162. K3N9V4000A-GC12 Samsung - K3N9V4000A 128M-Bit (8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 44SOP ; Current (mA/uA) = 50,60/30 ; Production Status = Mass Production ; Comments = -
  1163. K3P4C1000D Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1164. K3P4C1000D-DGC Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1165. K3P4C1000D-TC Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1166. K3P4C1000D-TCE Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1167. K3P4C1000D-TE Samsung - K3P4C1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1168. K3P4C1000E Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1169. K3P4C1000E-DC Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1170. K3P4C1000E-DC10 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1171. K3P4C1000E-DC12 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1172. K3P4C1000E-DC15 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1173. K3P4C1000E-GC Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1174. K3P4C1000E-GC10 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1175. K3P4C1000E-GC12 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1176. K3P4C1000E-GC15 Samsung - K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 80/50 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1177. K3P4U1000D Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1178. K3P4U1000D-DC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1179. K3P4U1000D-GC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1180. K3P4U1000D-TC Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1181. K3P4U1000D-TE Samsung - K3P4U1000D 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1182. K3P4V1000D Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1183. K3P4V1000D-DC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1184. K3P4V1000D-GC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1185. K3P4V1000D-TC Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1186. K3P4V1000D-TE Samsung - K3P4V1000D 8M-Bit (1M X 8,512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 42DIP,44SOP,44TSOP2 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
  1187. K3P4V1000E Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1188. K3P4V1000E-DC10 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1189. K3P4V1000E-DC12 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1190. K3P4V1000E-GC10 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1191. K3P4V1000E-GC12 Samsung - K3P4V1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30(Max.)@CL=50pF ; Current (mA/uA) = 40/30 ; Package = 44SOP,44TSOP2,42DIP ; Production Status = Mass Production ; Comments = -
  1192. K3P5C1000D Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1193. K3P5C1000D-DGC Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1194. K3P5C1000D-TC Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1195. K3P5C1000D-TC10 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1196. K3P5C1000D-TC12 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1197. K3P5C1000D-TC15 Samsung - K3P5C1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1198. K3P5C1000F Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1199. K3P5C1000F-DC Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1200. K3P5C1000F-DC10 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1201. K3P5C1000F-DC12 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1202. K3P5C1000F-DC15 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1203. K3P5C1000F-GC Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1204. K3P5C1000F-GC10 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1205. K3P5C1000F-GC12 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1206. K3P5C1000F-GC15 Samsung - K3P5C1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = 4word
  1207. K3P5C2000D Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1208. K3P5C2000D-SC Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1209. K3P5C2000D-SC10 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1210. K3P5C2000D-SC12 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1211. K3P5C2000D-SC15 Samsung - K3P5C2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1212. K3P5U1000D Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1213. K3P5U1000D-DC Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1214. K3P5U1000D-GC Samsung - K3P5U1000D 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Jun.\'03)
  1215. K3P5U1000F Samsung - K3P5U1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1216. K3P5U1000F-TC12 Samsung - K3P5U1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1217. K3P5U2000D Samsung - K3P5U2000D / K3P5V2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 3.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1218. K3P5V1000D Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1219. K3P5V1000D-DC Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1220. K3P5V1000D-GC Samsung - K3P5V1000D / K3P5U1000D 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 42DIP,44SOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = Eol BY June 2003
  1221. K3P5V1000F Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1222. K3P5V1000F-TC10 Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1223. K3P5V1000F-TC12 Samsung - K3P5V1000F 16M-Bit(2Mx8,1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = 4word
  1224. K3P5V2000D Samsung - K3P5V2000D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ; Organization = 1Mx16,512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1225. K3P6C1000B Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1226. K3P6C1000B-GC Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1227. K3P6C1000B-TC Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1228. K3P6C1000B-TC10 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1229. K3P6C1000B-TC12 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1230. K3P6C1000B-TC15 Samsung - K3P6C1000B 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1231. K3P6C1000F Samsung - K3P6C1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = -
  1232. K3P6C1000F-GC Samsung - K3P6C1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = -
  1233. K3P6C2000B Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1234. K3P6C2000B-SC Samsung - 32m-bit (2mx16 /1mx32) Cmos Mask Rom
  1235. K3P6C2000B-SC10 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1236. K3P6C2000B-SC12 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1237. K3P6C2000B-SC15 Samsung - K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 150/50 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1238. K3P6S1000D Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1239. K3P6S1000D-YC Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1240. K3P6S1000D-YCE Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1241. K3P6S1000D-YE Samsung - K3P6S1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 2.5 ; Speed(ns) = 150(50) ; Package = 48TSOP1 ; Current (mA/uA) = 40/5 ; Production Status = Eol ; Comments = -
  1242. K3P6U1000D Samsung - K3P6U1000D 32M-Bit(4Mx8,2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1243. K3P6U1000F Samsung - K3P6U1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = -
  1244. K3P6V1000B Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1245. K3P6V1000B-GC Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1246. K3P6V1000B-TC Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1247. K3P6V1000B-TCE Samsung - K3P6V1000B 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1248. K3P6V1000D Samsung - K3P6V1000D 32M-Bit(4Mx8/2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1249. K3P6V1000F Samsung - K3P6V1000F 32M-Bit(4Mx8 /2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40ns(Max.)@CL=100pF ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = -
  1250. K3P6V2000B Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1251. K3P6V2000B-SC Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1252. K3P6V2000B-SC10 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1253. K3P6V2000B-SC12 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1254. K3P6V2000B-SC15 Samsung - K3P6V2000B 32M-Bit(2Mx16/1Mx32) CMOS Mask ROM ; Organization = 2Mx16,1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=100pF ; Package = 70SSOP ; Current (mA/uA) = 60/30 ; Production Status = Mass Production ; Comments = EOL(Mar.\'03)
  1255. K3P7C1000B Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1256. K3P7C1000B-GC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1257. K3P7C1000B-TC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1258. K3P7C1000B-YC Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1259. K3P7C1000B-YC10 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1260. K3P7C1000B-YC12 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1261. K3P7C1000B-YC15 Samsung - K3P7C1000B 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1 ; Current (mA/uA) = 150/100 ; Production Status = Mass Production ; Comments = -
  1262. K3P7U1000A Samsung - K3P7U1000A 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40),100(30) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1263. K3P7U1000B Samsung - K3P7U1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1264. K3P7U1000B-YC12 Samsung - K3P7U1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1265. K3P7U2000A Samsung - K3P7U2000A 64M-Bit(4Mx16/2Mx32) CMOS Mask ROM ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1266. K3P7V1000 Samsung - 64m-bit (8mx8 /4mx16) Cmos Mask Rom
  1267. K3P7V1000A Samsung - K3P7V1000A 64M-Bit(8Mx8,4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 44SOP,48TSOP1 ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1268. K3P7V1000B Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1269. K3P7V1000B-YC Samsung - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
  1270. K3P7V1000B-YC10 Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1271. K3P7V1000B-YC12 Samsung - K3P7V1000B 64M-Bit(8Mx8/4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP,44TSOP2,48TSOP1,48FBGA ; Current (mA/uA) = 60/50 ; Production Status = Mass Production ; Comments = -
  1272. K3P7V2000A Samsung - K3P7V2000A 64M-Bit(4Mx16,2Mx32) CMOS Mask ROM ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 50,60/30 ; Production Status = Eol ; Comments = -
  1273. K3P7VU1000B-YC Samsung - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
  1274. K3P9U1000A Samsung - K3P9U1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1275. K3P9U1000A-YC12 Samsung - K3P9U1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1276. K3P9U1000M Samsung - K3P9U1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1277. K3P9U1000M-YC Samsung - K3P9U1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1278. K3P9U2000M Samsung - K3P9U2000M 128M-Bit (8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1279. K3P9U2000M-SC Samsung - K3P9U2000M 128M-Bit (8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.0 ; Speed(ns) = 120(40) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1280. K3P9U4000A Samsung - K3P9U4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1281. K3P9U4000A-GC12 Samsung - K3P9U4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1282. K3P9V1000A Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1283. K3P9V1000A-YC10 Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1284. K3P9V1000A-YC12 Samsung - K3P9V1000A 128M-Bit(16Mx8 /8Mx16) CMOS Mask ROM ; Organization = 16Mx8/8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 48TSOP1 ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1285. K3P9V1000M Samsung - K3P9V1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1286. K3P9V1000M-YC Samsung - K3P9V1000M 128M-Bit(16Mx8/8Mx16) CMOS Mask ROM ; Organization = 16Mx8,8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 48TSOP1 ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1287. K3P9V2000M Samsung - K3P9V2000M 128M-Bit(8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1288. K3P9V2000M-SC Samsung - K3P9V2000M 128M-Bit(8Mx16/4Mx32) CMOS Mask ROM ; Organization = 8Mx16,4Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 100(30) ; Package = 70SSOP ; Current (mA/uA) = 70,80/30 ; Production Status = Eol ; Comments = -
  1289. K3P9V4000A Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1290. K3P9V4000A-GC10 Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1291. K3P9V4000A-GC12 Samsung - K3P9V4000A 128M-Bit(8Mx16) CMOS Mask ROM ; Organization = 8Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100/30ns(Max.)@CL=50pF,120/40(Max.)@CL=100pF ; Package = 44SOP ; Current (mA/uA) = 80/30 ; Production Status = Mass Production ; Comments = -
  1292. K3S6V2000M Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1293. K3S6V2000M-TC Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1294. K3S6V2000M-TC15 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1295. K3S6V2000M-TC20 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1296. K3S6V2000M-TC30 Samsung - K3S6V2000M 1M X 32 Synchronous Maskrom ; Organization = 2Mx16,1Mx32 ; Voltage(V) = - ; Speed(MHz) = 33,50,66 ; Package = 86TSOP2 ; Production Status = Eol ; Comments = -
  1297. K3S7V2000M Samsung - K3S7V2000M 2M X 32 Synchronous Maskrom ; Organization = 4Mx16,2Mx32 ; Voltage(V) = 3.3 ; Speed(MHz) = 33,50,66,83,100 ; Package = 86TSOP2 ; Production Status = Mass Production ; Comments = -
  1298. K3S7V2000M-TC Samsung - 64m-bit (4mx16 /2mx32) Synchronous Maskrom
  1299. K3S7V2000M-TC10 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1300. K3S7V2000M-TC12 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1301. K3S7V2000M-TC15 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1302. K3S7V2000M-TC20 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1303. K3S7V2000M-TC30 Samsung - 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
  1304. K4E151611C Samsung - K4E640412B 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1305. K4E151611D Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1306. K4E151611D-J Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1307. K4E151611D-T Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1308. K4E151612C Samsung - K4E151612C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1309. K4E151612D Samsung - 1m X 16bit Cmos Dynamic Ram With Extended Data Out
  1310. K4E151612D-J Samsung - K4E151612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1311. K4E151612D-T Samsung - K4E151612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,44TSOP2,50TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1312. K4E160411C Samsung - K4E170411C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1313. K4E160411D Samsung - 4m X 4bit Cmos Dynamic Ram With Extended Data Out
  1314. K4E160411D-B Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1315. K4E160411D-F Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1316. K4E160412C Samsung - K4E170412C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1317. K4E160412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1318. K4E160412D-B Samsung - K4E160412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1319. K4E160412D-F Samsung - K4E160412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1320. K4E160811C Samsung - K4E170811C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2-300 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1321. K4E160811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1322. K4E160811D-B Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1323. K4E160811D-F Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1324. K4E160812C Samsung - K4E170812C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1325. K4E160812D Samsung - 2m X 8bit Cmos Dynamic Ram With Extended Data Out
  1326. K4E160812D-B Samsung - K4E160812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1327. K4E160812D-F Samsung - K4E160812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1328. K4E170411C Samsung - K4E170411C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1329. K4E170411D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1330. K4E170411D-B Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1331. K4E170411D-F Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1332. K4E170412C Samsung - K4E170412C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1333. K4E170412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
  1334. K4E170412D-B Samsung - K4E170412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1335. K4E170412D-F Samsung - K4E170412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1336. K4E170811C Samsung - K4E170811C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2-300 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1337. K4E170811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1338. K4E170811D-B Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1339. K4E170811D-F Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1340. K4E170812C Samsung - K4E170812C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1341. K4E170812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Extended Data Out
  1342. K4E170812D-B Samsung - K4E170812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1343. K4E170812D-F Samsung - K4E170812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1344. K4E171611C Samsung - K4E171611C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1345. K4E171611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
  1346. K4E171611D-J Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1347. K4E171611D-T Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1348. K4E171612C Samsung - K4E171612C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1349. K4E171612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
  1350. K4E171612D-J Samsung - K4E171612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1351. K4E171612D-T Samsung - K4E171612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1352. K4E640411B Samsung - K4E660411B 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1353. K4E640411C Samsung - K4E640411C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1354. K4E640411D Samsung - K4E640411D 16MB X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1355. K4E640411D-JC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1356. K4E640411D-JC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1357. K4E640411D-TC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1358. K4E640411D-TC60 Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1359. K4E640412B Samsung - M374F3200BJ1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*36+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1360. K4E640412C Samsung - K4E660412C 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1361. K4E640412D Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1362. K4E640412D-JC/L Samsung - M374F1600DJ1 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*18+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1363. K4E640412D-TC/L Samsung - M374F1600DJ1 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*18+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1364. K4E640412E Samsung - 16m X 4bit Cmos Dynamic Ram With Extended Data Out
  1365. K4E640412E-JI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1366. K4E640412E-JI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1367. K4E640412E-JI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1368. K4E640412E-JP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1369. K4E640412E-JP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1370. K4E640412E-JP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1371. K4E640412E-TI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1372. K4E640412E-TI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1373. K4E640412E-TI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1374. K4E640412E-TP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1375. K4E640412E-TP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1376. K4E640412E-TP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1377. K4E640811B Samsung - K4E640811B 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1378. K4E640811C Samsung - K4E640811C 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1379. K4E640811D Samsung - K4E640811D 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1380. K4E640812B Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1381. K4E640812C Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1382. K4E640812D Samsung - M374F0803DJ1 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 64 ; Organization = 8Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (8Mx8)*9+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1383. K4E640812D-J Samsung - M374F0803DJ3 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode ; Density(MB) = 64 ; Organization = 8Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (8Mx8)*9+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1384. K4E640812E Samsung - 8m X 8bit Cmos Dynamic Ram With Extended Data Out
  1385. K4E641611B Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1386. K4E641611B-45 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1387. K4E641611B-50 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1388. K4E641611B-60 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1389. K4E641611C Samsung - K4E641611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1390. K4E641611D Samsung - K4E641611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1391. K4E641612B Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1392. K4E641612B-L Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1393. K4E641612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1394. K4E641612C Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1395. K4E641612C-45 Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1396. K4E641612C-50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1397. K4E641612C-60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1398. K4E641612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1399. K4E641612C-T Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1400. K4E641612C-T45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1401. K4E641612C-T50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1402. K4E641612C-T60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1403. K4E641612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1404. K4E641612C-TC45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1405. K4E641612C-TC50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1406. K4E641612C-TC60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1407. K4E641612C-TL45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1408. K4E641612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1409. K4E641612C-TL60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1410. K4E641612D Samsung - Cmos Dram
  1411. K4E641612D-T Samsung - M366F0804DT1 8Mx64 DRAM Dimm Using 4Mx16,8K&4K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)*8+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1412. K4E641612E Samsung - K4E641612E 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1413. K4E6601611B Samsung - M364E0884BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x8+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1414. K4E660411B Samsung - M372E3280BJ0 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1415. K4E660411C Samsung - K4E660411C 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1416. K4E660411D Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1417. K4E660411D-JC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1418. K4E660411D-JC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1419. K4E660411D-TC50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1420. K4E660411D-TC60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1421. K4E660412B Samsung - K4E660412B 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1422. K4E660412C Samsung - M366F1680CJ2 16Mx64 DRAM Dimm Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*16+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1423. K4E660412C-J Samsung - M372F3280CJ4 32M X 72 DRAM Dimm With Ecc Using 16Mx4, 4K & 8K Refresh, 3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1424. K4E660412C-T Samsung - M372F3280CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1425. K4E660412D Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1426. K4E660412D-J Samsung - M372F3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1427. K4E660412D-JC/L Samsung - M372F3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1428. K4E660412D-T Samsung - M372F3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1429. K4E660412D-TC/L Samsung - M372F3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1430. K4E660412E Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1431. K4E660412E-JI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1432. K4E660412E-JI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1433. K4E660412E-JI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1434. K4E660412E-JP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1435. K4E660412E-JP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1436. K4E660412E-JP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1437. K4E660412E-T Samsung - M372F3280ET1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K ; Speed(ns) = C50,C60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+EEPROM ; Production Status = Eol ; Comments = -
  1438. K4E660412E-TI45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1439. K4E660412E-TI50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1440. K4E660412E-TI60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1441. K4E660412E-TP45 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1442. K4E660412E-TP50 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1443. K4E660412E-TP60 Samsung - 16M x 4bit CMOS Dynamic RAM with Extended Data Out
  1444. K4E660811B Samsung - K4E660811B 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1445. K4E660811C Samsung - K4E660811C 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ-400A,32TSOP2-400B ; Power = Normal ; Production Status = Eol ; Comments = -
  1446. K4E660811D Samsung - K4E660811D 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1447. K4E660812B Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1448. K4E660812C Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1449. K4E660812D Samsung - K4E660812D ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1450. K4E660812E Samsung - 8M x 8bit CMOS Dynamic RAM with Extended Data Out
  1451. K4E661611B Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1452. K4E661611B-45 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1453. K4E661611B-50 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1454. K4E661611B-60 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1455. K4E661611C Samsung - K4E661611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1456. K4E661611D Samsung - K4E661611D 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1457. K4E661611D-TC60 Samsung - 4m X 16bit Cmos Dynamic Ram With Extended Data Out
  1458. K4E661612B Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1459. K4E661612B-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1460. K4E661612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1461. K4E661612C Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1462. K4E661612C-45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1463. K4E661612C-50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1464. K4E661612C-60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1465. K4E661612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1466. K4E661612C-L45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1467. K4E661612C-L50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1468. K4E661612C-L60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1469. K4E661612C-T Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1470. K4E661612C-T45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1471. K4E661612C-T50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1472. K4E661612C-T60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1473. K4E661612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1474. K4E661612C-TC45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1475. K4E661612C-TC50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1476. K4E661612C-TC60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1477. K4E661612C-TL45 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1478. K4E661612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1479. K4E661612C-TL60 Samsung - 4M x 16bit CMOS Dynamic RAM with Extended Data Out
  1480. K4E661612D Samsung - CMOS DRAM
  1481. K4E661612D-T Samsung - M366F0484DT1 4MBx64 DRAM Dimm Using 4MBx16,4KB&8KB Refresh 3.3V,EDO Mode Without Buffer ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50, 60 ; #of Pin = 168 ; Component Composition = (4Mx16)*4+EEPROM ; Production Status = Eol ; Comments = Unbuffered
  1482. K4E661612E Samsung - K4E661612E 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1483. K4F151611 Samsung - 1m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1484. K4F151611C Samsung - K4F171611C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1485. K4F151611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1486. K4F151611D-50 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1487. K4F151611D-60 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1488. K4F151611D-J Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1489. K4F151611D-T Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1490. K4F151612C Samsung - K4F151612C 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1491. K4F151612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1492. K4F151612D-50 Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1493. K4F151612D-60 Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1494. K4F151612D-J Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1495. K4F151612D-T Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1496. K4F160411C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1497. K4F160411C-B Samsung - 4m X 4bit Cmos Dynamic Ram With Fast Page Mode
  1498. K4F160411C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1499. K4F160411D Samsung - 4m X 4bit Cmos Dynamic Ram With Fast Page Mode
  1500. K4F160411D-B Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1501. K4F160411D-F Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1502. K4F160412C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1503. K4F160412C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1504. K4F160412C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1505. K4F160412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1506. K4F160412D-B Samsung - K4F160412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1507. K4F160412D-F Samsung - K4F160412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1508. K4F160811C Samsung - K4F170811C 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1509. K4F160811D Samsung - 2m X 8bit Cmos Dynamic Ram With Fast Page Mode
  1510. K4F160811D-B Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1511. K4F160811D-F Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1512. K4F160812C Samsung - K4F170812C 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1513. K4F160812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  1514. K4F160812D-B Samsung - K4F160812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1515. K4F160812D-F Samsung - K4F160812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1516. K4F170111C Samsung - K4F170111C 16Mx1Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx1 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1517. K4F170112C Samsung - K4F170112C 16Mx1Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx1 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1518. K4F170411C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1519. K4F170411C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1520. K4F170411C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1521. K4F170411D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1522. K4F170411D-B Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1523. K4F170411D-F Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1524. K4F170412C Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1525. K4F170412C-B Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1526. K4F170412C-F Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1527. K4F170412D Samsung - 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
  1528. K4F170412D-B Samsung - K4F170412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1529. K4F170412D-F Samsung - K4F170412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1530. K4F170811C Samsung - K4F170811C 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1531. K4F170811D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  1532. K4F170811D-B Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1533. K4F170811D-F Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1534. K4F170812C Samsung - K4F170812C 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1535. K4F170812D Samsung - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
  1536. K4F170812D-B Samsung - K4F170812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1537. K4F170812D-F Samsung - K4F170812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1538. K4F171611C Samsung - K4F171611C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1539. K4F171611D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1540. K4F171611D-50 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1541. K4F171611D-60 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1542. K4F171611D-J Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1543. K4F171611D-T Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
  1544. K4F171612C Samsung - K4F171612C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1545. K4F171612D Samsung - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  1546. K4F171612D-50 Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1547. K4F171612D-60 Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1548. K4F171612D-J Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1549. K4F171612D-T Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
  1550. K4F640411B Samsung - K4F640411B 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1551. K4F640411C Samsung - K4F640411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1552. K4F640411D Samsung - K4F640411D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1553. K4F640412B Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1554. K4F640412C Samsung - K4F640412C 16M X4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1555. K4F640412D Samsung - 16m X 4bit Cmos Dynamic Ram With Fast Page Mode
  1556. K4F640412D-JC/L Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1557. K4F640412D-TC/L Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1558. K4F640412E Samsung - K4F640412E 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1559. K4F640811B Samsung - 8m X 8bit Cmos Dynamic Ram With Fast Page Mode
  1560. K4F640811C Samsung - K4F640412C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1561. K4F640811D Samsung - K4F640811D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1562. K4F640812B Samsung - K4F640812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1563. K4F640812C Samsung - K4F640812C 8M X8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50, 60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Until Aug. 2000
  1564. K4F640812D Samsung - 8m X 8bit Cmos Dynamic Ram With Fast Page Mode
  1565. K4F640812D-JC/L Samsung - K4F640812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1566. K4F640812D-TC/L Samsung - K4F640812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1567. K4F641611B Samsung - K4F641611B 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1568. K4F641611C Samsung - K4F641611C 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1569. K4F641611D Samsung - K4F641611D 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1570. K4F641612B Samsung - K4F641612B 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1571. K4F641612C Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1572. K4F641612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1573. K4F641612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1574. K4F641612C-TL50 Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1575. K4F641612D Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1576. K4F641612D-TI Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1577. K4F641612D-TP Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1578. K4F641612E Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1579. K4F660411B Samsung - M372C3280BJ0 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1580. K4F660411C Samsung - K4F660411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1581. K4F660411D Samsung - K4F660411D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1582. K4F660412B Samsung - K4F660412B 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1583. K4F660412B-J Samsung - M372V3280CJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1584. K4F660412C Samsung - K4F660412C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = ,
  1585. K4F660412C-J Samsung - M372V3280CJ3 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1586. K4F660412C-T Samsung - M372V3280CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1587. K4F660412D Samsung - 16M x 4bit CMOS Dynamic RAM with Fast Page Mode
  1588. K4F660412D-J Samsung - M372V3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1589. K4F660412D-JC/L Samsung - M372V3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1590. K4F660412D-T Samsung - M372V3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1591. K4F660412D-TC/L Samsung - M372V3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1592. K4F660412E Samsung - K4F660412E 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1593. K4F660811B Samsung - 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
  1594. K4F660811C Samsung - K4F660811C 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1595. K4F660811D Samsung - K4F660811D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1596. K4F660812B Samsung - K4F660812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1597. K4F660812C Samsung - K4F660812C 8M X8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
  1598. K4F660812D Samsung - 8M x 8bit CMOS Dynamic RAM with Fast Page Mode
  1599. K4F660812D-JC/L Samsung - K4F660812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1600. K4F660812D-TC/L Samsung - K4F660812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
  1601. K4F660812E Samsung - K4F660812E 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
  1602. K4F661611B Samsung - M364C0884BT0 Fast Page Mode:8Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x8+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
  1603. K4F661611C Samsung - K4F661611C 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
  1604. K4F661611D Samsung - K4F661611D 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
  1605. K4F661612B Samsung - 4m X 16bit Cmos Dynamic Ram With Fast Page Mode
  1606. K4F661612B-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1607. K4F661612B-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1608. K4F661612C Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1609. K4F661612C-L Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1610. K4F661612C-TC Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1611. K4F661612D Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1612. K4F661612D-TI Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1613. K4F661612D-TP Samsung - 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
  1614. K4F661612E Samsung - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
  1615. K4G163222A Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1616. K4G163222A-PC/L50 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1617. K4G163222A-PC/L55 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1618. K4G163222A-PC/L60 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1619. K4G163222A-PC/L70 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1620. K4G163222A-PC/L80 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1621. K4G163222A-QC/L50 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1622. K4G163222A-QC/L55 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1623. K4G163222A-QC/L60 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1624. K4G163222A-QC/L70 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1625. K4G163222A-QC/L80 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
  1626. K4G323222A Samsung - 32mbit Sgram
  1627. K4G323222A-PC/L45 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1628. K4G323222A-PC/L50 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1629. K4G323222A-PC/L60 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1630. K4G323222A-PC/L70 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1631. K4G323222A-PC/L7C Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1632. K4G323222A-QC/L45 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1633. K4G323222A-QC/L50 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1634. K4G323222A-QC/L60 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1635. K4G323222A-QC/L70 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1636. K4G323222A-QC/L7C Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
  1637. K4G323222M Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1638. K4G323222M-PC/L45 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1639. K4G323222M-PC/L50 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1640. K4G323222M-PC/L55 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1641. K4G323222M-PC/L60 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1642. K4G323222M-PC/L70 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1643. K4G323222M-PC/L7C Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1644. K4G323222M-PC/L80 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1645. K4G323222M-QC/L45 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1646. K4G323222M-QC/L50 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1647. K4G323222M-QC/L55 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1648. K4G323222M-QC/L60 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1649. K4G323222M-QC/L70 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1650. K4G323222M-QC/L7C Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1651. K4G323222M-QC/L80 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
  1652. K4G813222B Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1653. K4G813222B-PC10 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1654. K4G813222B-PC70 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1655. K4G813222B-PC80 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1656. K4G813222B-QC10 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1657. K4G813222B-QC70 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1658. K4G813222B-QC80 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
  1659. K4H1G0438A Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  1660. K4H1G0438A-TCA0 Samsung - 128Mb DDR SDRAM
  1661. K4H1G0438A-TCA2 Samsung - 128Mb DDR SDRAM
  1662. K4H1G0438A-TCB0 Samsung - 128Mb DDR SDRAM
  1663. K4H1G0438A-TLA0 Samsung - 128Mb DDR SDRAM
  1664. K4H1G0438A-TLA2 Samsung - 128Mb DDR SDRAM
  1665. K4H1G0438A-TLB0 Samsung - 128Mb DDR SDRAM
  1666. K4H1G0438A-UC/LCC,B3,A2,B0 Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  1667. K4H1G0438B-TCA0 Samsung - 128Mb DDR SDRAM
  1668. K4H1G0438B-TCA2 Samsung - 128Mb DDR SDRAM
  1669. K4H1G0438B-TCB0 Samsung - 128Mb DDR SDRAM
  1670. K4H1G0438B-TLA0 Samsung - 128Mb DDR SDRAM
  1671. K4H1G0438B-TLA2 Samsung - 128Mb DDR SDRAM
  1672. K4H1G0438B-TLB0 Samsung - 128Mb DDR SDRAM
  1673. K4H1G0438C-TCA0 Samsung - 128Mb DDR SDRAM
  1674. K4H1G0438C-TCA2 Samsung - 128Mb DDR SDRAM
  1675. K4H1G0438C-TCB0 Samsung - 128Mb DDR SDRAM
  1676. K4H1G0438C-TLA0 Samsung - 128Mb DDR SDRAM
  1677. K4H1G0438C-TLA2 Samsung - 128Mb DDR SDRAM
  1678. K4H1G0438C-TLB0 Samsung - 128Mb DDR SDRAM
  1679. K4H1G0438D-TCA0 Samsung - 128Mb DDR SDRAM
  1680. K4H1G0438D-TCA2 Samsung - 128Mb DDR SDRAM
  1681. K4H1G0438D-TCB0 Samsung - 128Mb DDR SDRAM
  1682. K4H1G0438D-TLA0 Samsung - 128Mb DDR SDRAM
  1683. K4H1G0438D-TLA2 Samsung - 128Mb DDR SDRAM
  1684. K4H1G0438D-TLB0 Samsung - 128Mb DDR SDRAM
  1685. K4H1G0438E-TCA0 Samsung - 128Mb DDR SDRAM
  1686. K4H1G0438E-TCA2 Samsung - 128Mb DDR SDRAM
  1687. K4H1G0438E-TCB0 Samsung - 128Mb DDR SDRAM
  1688. K4H1G0438E-TLA0 Samsung - 128Mb DDR SDRAM
  1689. K4H1G0438E-TLA2 Samsung - 128Mb DDR SDRAM
  1690. K4H1G0438E-TLB0 Samsung - 128Mb DDR SDRAM
  1691. K4H1G0438M Samsung - 1gb M-die Ddr Sdram Specification
  1692. K4H1G0438M-LA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1693. K4H1G0438M-LB0 Samsung - 1gb M-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  1694. K4H1G0438M-LB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1695. K4H1G0438M-TC(L)/B3,A2,B0 Samsung - st. 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  1696. K4H1G0438M-TCA0 Samsung - 128Mb DDR SDRAM
  1697. K4H1G0438M-TCA2 Samsung - 128Mb DDR SDRAM
  1698. K4H1G0438M-TCB0 Samsung - 128Mb DDR SDRAM
  1699. K4H1G0438M-TLA0 Samsung - 128Mb DDR SDRAM
  1700. K4H1G0438M-TLA2 Samsung - 128Mb DDR SDRAM
  1701. K4H1G0438M-TLB0 Samsung - 128Mb DDR SDRAM
  1702. K4H1G0438M-UC Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1703. K4H1G0438M-UC0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1704. K4H1G0438M-UC2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1705. K4H1G0438M-UC3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1706. K4H1G0438M-UCA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1707. K4H1G0438M-UCB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1708. K4H1G0438M-UCB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1709. K4H1G0438M-ULA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1710. K4H1G0438M-ULB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1711. K4H1G0438M-ULB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1712. K4H1G0638B Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1713. K4H1G0638B-T(U)C/LA2 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1714. K4H1G0638B-T(U)C/LB0 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1715. K4H1G0638B-TC/LA2 Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1716. K4H1G0638B-TC/LAA Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1717. K4H1G0638B-TC/LB0 Samsung - K4H1G0638B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.256Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1718. K4H1G0638C Samsung - Stacked 1gb C-die Ddr Sdram Specification
  1719. K4H1G0638C-UC/LA2,B0 Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0638C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1720. K4H1G0738B Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1721. K4H1G0738B-T(U)C/LA2 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1722. K4H1G0738B-T(U)C/LB0 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1723. K4H1G0738B-TC/LA2 Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1724. K4H1G0738B-TC/LAA Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1725. K4H1G0738B-TC/LB0 Samsung - K4H1G0738B DDR Sdram Stacked 1Gb B-die (x4/x8) ; Organization = St.128Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Customer Sample(Aug.\'03) ; Comments = Stacked
  1726. K4H1G0738C Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1727. K4H1G0738C-UC/LA2,B0 Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0638C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
  1728. K4H1G0838A Samsung - 32M x 8Bit x 4 Banks Double Data Rate SDRAMhe K4H1G0838A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  1729. K4H1G0838A-TCA0 Samsung - 128Mb DDR SDRAM
  1730. K4H1G0838A-TCA2 Samsung - 128Mb DDR SDRAM
  1731. K4H1G0838A-TCB0 Samsung - 128Mb DDR SDRAM
  1732. K4H1G0838A-TLA0 Samsung - 128Mb DDR SDRAM
  1733. K4H1G0838A-TLA2 Samsung - 128Mb DDR SDRAM
  1734. K4H1G0838A-TLB0 Samsung - 128Mb DDR SDRAM
  1735. K4H1G0838A-UC/LCC,B3,A2,B0 Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  1736. K4H1G0838B-TCA0 Samsung - 128Mb DDR SDRAM
  1737. K4H1G0838B-TCA2 Samsung - 128Mb DDR SDRAM
  1738. K4H1G0838B-TCB0 Samsung - 128Mb DDR SDRAM
  1739. K4H1G0838B-TLA0 Samsung - 128Mb DDR SDRAM
  1740. K4H1G0838B-TLA2 Samsung - 128Mb DDR SDRAM
  1741. K4H1G0838B-TLB0 Samsung - 128Mb DDR SDRAM
  1742. K4H1G0838C-TCA0 Samsung - 128Mb DDR SDRAM
  1743. K4H1G0838C-TCA2 Samsung - 128Mb DDR SDRAM
  1744. K4H1G0838C-TCB0 Samsung - 128Mb DDR SDRAM
  1745. K4H1G0838C-TLA0 Samsung - 128Mb DDR SDRAM
  1746. K4H1G0838C-TLA2 Samsung - 128Mb DDR SDRAM
  1747. K4H1G0838C-TLB0 Samsung - 128Mb DDR SDRAM
  1748. K4H1G0838D-TCA0 Samsung - 128Mb DDR SDRAM
  1749. K4H1G0838D-TCA2 Samsung - 128Mb DDR SDRAM
  1750. K4H1G0838D-TCB0 Samsung - 128Mb DDR SDRAM
  1751. K4H1G0838D-TLA0 Samsung - 128Mb DDR SDRAM
  1752. K4H1G0838D-TLA2 Samsung - 128Mb DDR SDRAM
  1753. K4H1G0838D-TLB0 Samsung - 128Mb DDR SDRAM
  1754. K4H1G0838E-TCA0 Samsung - 128Mb DDR SDRAM
  1755. K4H1G0838E-TCA2 Samsung - 128Mb DDR SDRAM
  1756. K4H1G0838E-TCB0 Samsung - 128Mb DDR SDRAM
  1757. K4H1G0838E-TLA0 Samsung - 128Mb DDR SDRAM
  1758. K4H1G0838E-TLA2 Samsung - 128Mb DDR SDRAM
  1759. K4H1G0838E-TLB0 Samsung - 128Mb DDR SDRAM
  1760. K4H1G0838M Samsung - 32M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0838M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  1761. K4H1G0838M-LA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1762. K4H1G0838M-LB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1763. K4H1G0838M-LB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1764. K4H1G0838M-TCA0 Samsung - 128Mb DDR SDRAM
  1765. K4H1G0838M-TCA2 Samsung - 128Mb DDR SDRAM
  1766. K4H1G0838M-TCB0 Samsung - 128Mb DDR SDRAM
  1767. K4H1G0838M-TLA0 Samsung - 128Mb DDR SDRAM
  1768. K4H1G0838M-TLA2 Samsung - 128Mb DDR SDRAM
  1769. K4H1G0838M-TLB0 Samsung - 128Mb DDR SDRAM
  1770. K4H1G0838M-UC(L)/B3,A2,B0 Samsung - st. 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
  1771. K4H1G0838M-UC0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1772. K4H1G0838M-UC2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1773. K4H1G0838M-UC3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1774. K4H1G0838M-UCA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1775. K4H1G0838M-UCB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1776. K4H1G0838M-UCB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1777. K4H1G0838M-ULA2 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1778. K4H1G0838M-ULB0 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1779. K4H1G0838M-ULB3 Samsung - 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1780. K4H1G1638A-TCA0 Samsung - 128Mb DDR SDRAM
  1781. K4H1G1638A-TCA2 Samsung - 128Mb DDR SDRAM
  1782. K4H1G1638A-TCB0 Samsung - 128Mb DDR SDRAM
  1783. K4H1G1638A-TLA0 Samsung - 128Mb DDR SDRAM
  1784. K4H1G1638A-TLA2 Samsung - 128Mb DDR SDRAM
  1785. K4H1G1638A-TLB0 Samsung - 128Mb DDR SDRAM
  1786. K4H1G1638B-TCA0 Samsung - 128Mb DDR SDRAM
  1787. K4H1G1638B-TCA2 Samsung - 128Mb DDR SDRAM
  1788. K4H1G1638B-TCB0 Samsung - 128Mb DDR SDRAM
  1789. K4H1G1638B-TLA0 Samsung - 128Mb DDR SDRAM
  1790. K4H1G1638B-TLA2 Samsung - 128Mb DDR SDRAM
  1791. K4H1G1638B-TLB0 Samsung - 128Mb DDR SDRAM
  1792. K4H1G1638C-TCA0 Samsung - 128Mb DDR SDRAM
  1793. K4H1G1638C-TCA2 Samsung - 128Mb DDR SDRAM
  1794. K4H1G1638C-TCB0 Samsung - 128Mb DDR SDRAM
  1795. K4H1G1638C-TLA0 Samsung - 128Mb DDR SDRAM
  1796. K4H1G1638C-TLA2 Samsung - 128Mb DDR SDRAM
  1797. K4H1G1638C-TLB0 Samsung - 128Mb DDR SDRAM
  1798. K4H1G1638D-TCA0 Samsung - 128Mb DDR SDRAM
  1799. K4H1G1638D-TCA2 Samsung - 128Mb DDR SDRAM
  1800. K4H1G1638D-TCB0 Samsung - 128Mb DDR SDRAM
  1801. K4H1G1638D-TLA0 Samsung - 128Mb DDR SDRAM
  1802. K4H1G1638D-TLA2 Samsung - 128Mb DDR SDRAM
  1803. K4H1G1638D-TLB0 Samsung - 128Mb DDR SDRAM
  1804. K4H1G1638E-TCA0 Samsung - 128Mb DDR SDRAM
  1805. K4H1G1638E-TCA2 Samsung - 128Mb DDR SDRAM
  1806. K4H1G1638E-TCB0 Samsung - 128Mb DDR SDRAM
  1807. K4H1G1638E-TLA0 Samsung - 128Mb DDR SDRAM
  1808. K4H1G1638E-TLA2 Samsung - 128Mb DDR SDRAM
  1809. K4H1G1638E-TLB0 Samsung - 128Mb DDR SDRAM
  1810. K4H1G1638M-TCA0 Samsung - 128Mb DDR SDRAM
  1811. K4H1G1638M-TCA2 Samsung - 128Mb DDR SDRAM
  1812. K4H1G1638M-TCB0 Samsung - 128Mb DDR SDRAM
  1813. K4H1G1638M-TLA0 Samsung - 128Mb DDR SDRAM
  1814. K4H1G1638M-TLA2 Samsung - 128Mb DDR SDRAM
  1815. K4H1G1638M-TLB0 Samsung - 128Mb DDR SDRAM
  1816. K4H1G3238A-TCA0 Samsung - 128Mb DDR SDRAM
  1817. K4H1G3238A-TCA2 Samsung - 128Mb DDR SDRAM
  1818. K4H1G3238A-TCB0 Samsung - 128Mb DDR SDRAM
  1819. K4H1G3238A-TLA0 Samsung - 128Mb DDR SDRAM
  1820. K4H1G3238A-TLA2 Samsung - 128Mb DDR SDRAM
  1821. K4H1G3238A-TLB0 Samsung - 128Mb DDR SDRAM
  1822. K4H1G3238B-TCA0 Samsung - 128Mb DDR SDRAM
  1823. K4H1G3238B-TCA2 Samsung - 128Mb DDR SDRAM
  1824. K4H1G3238B-TCB0 Samsung - 128Mb DDR SDRAM
  1825. K4H1G3238B-TLA0 Samsung - 128Mb DDR SDRAM
  1826. K4H1G3238B-TLA2 Samsung - 128Mb DDR SDRAM
  1827. K4H1G3238B-TLB0 Samsung - 128Mb DDR SDRAM
  1828. K4H1G3238C-TCA0 Samsung - 128Mb DDR SDRAM
  1829. K4H1G3238C-TCA2 Samsung - 128Mb DDR SDRAM
  1830. K4H1G3238C-TCB0 Samsung - 128Mb DDR SDRAM
  1831. K4H1G3238C-TLA0 Samsung - 128Mb DDR SDRAM
  1832. K4H1G3238C-TLA2 Samsung - 128Mb DDR SDRAM
  1833. K4H1G3238C-TLB0 Samsung - 128Mb DDR SDRAM
  1834. K4H1G3238D-TCA0 Samsung - 128Mb DDR SDRAM
  1835. K4H1G3238D-TCA2 Samsung - 128Mb DDR SDRAM
  1836. K4H1G3238D-TCB0 Samsung - 128Mb DDR SDRAM
  1837. K4H1G3238D-TLA0 Samsung - 128Mb DDR SDRAM
  1838. K4H1G3238D-TLA2 Samsung - 128Mb DDR SDRAM
  1839. K4H1G3238D-TLB0 Samsung - 128Mb DDR SDRAM
  1840. K4H1G3238E-TCA0 Samsung - 128Mb DDR SDRAM
  1841. K4H1G3238E-TCA2 Samsung - 128Mb DDR SDRAM
  1842. K4H1G3238E-TCB0 Samsung - 128Mb DDR SDRAM
  1843. K4H1G3238E-TLA0 Samsung - 128Mb DDR SDRAM
  1844. K4H1G3238E-TLA2 Samsung - 128Mb DDR SDRAM
  1845. K4H1G3238E-TLB0 Samsung - 128Mb DDR SDRAM
  1846. K4H1G3238M-TCA0 Samsung - 128Mb DDR SDRAM
  1847. K4H1G3238M-TCA2 Samsung - 128Mb DDR SDRAM
  1848. K4H1G3238M-TCB0 Samsung - 128Mb DDR SDRAM
  1849. K4H1G3238M-TLA0 Samsung - 128Mb DDR SDRAM
  1850. K4H1G3238M-TLA2 Samsung - 128Mb DDR SDRAM
  1851. K4H1G3238M-TLB0 Samsung - 128Mb DDR SDRAM
  1852. K4H280438A-TCA0 Samsung - 128Mb DDR SDRAM
  1853. K4H280438A-TCA2 Samsung - 128Mb DDR SDRAM
  1854. K4H280438A-TCB0 Samsung - 128Mb DDR SDRAM
  1855. K4H280438A-TLA0 Samsung - 128Mb DDR SDRAM
  1856. K4H280438A-TLA2 Samsung - 128Mb DDR SDRAM
  1857. K4H280438A-TLB0 Samsung - 128Mb DDR SDRAM
  1858. K4H280438B Samsung - K4H280438B 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1859. K4H280438B-TCA0 Samsung - 128Mb DDR SDRAM
  1860. K4H280438B-TCA2 Samsung - 128Mb DDR SDRAM
  1861. K4H280438B-TCB0 Samsung - 128Mb DDR SDRAM
  1862. K4H280438B-TLA0 Samsung - 128Mb DDR SDRAM
  1863. K4H280438B-TLA2 Samsung - 128Mb DDR SDRAM
  1864. K4H280438B-TLB0 Samsung - 128Mb DDR SDRAM
  1865. K4H280438C Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1866. K4H280438C-TCA0 Samsung - 128Mb DDR SDRAM
  1867. K4H280438C-TCA2 Samsung - 128Mb DDR SDRAM
  1868. K4H280438C-TCB0 Samsung - 128Mb DDR SDRAM
  1869. K4H280438C-TCB3 Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1870. K4H280438C-TLA0 Samsung - 128Mb DDR SDRAM
  1871. K4H280438C-TLA2 Samsung - 128Mb DDR SDRAM
  1872. K4H280438C-TLB0 Samsung - 128Mb DDR SDRAM
  1873. K4H280438C-TLB3 Samsung - K4H280438C 128Mb DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1874. K4H280438D Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1875. K4H280438D-TCA0 Samsung - 128Mb DDR SDRAM
  1876. K4H280438D-TCA2 Samsung - 128Mb DDR SDRAM
  1877. K4H280438D-TCB0 Samsung - 128Mb DDR SDRAM
  1878. K4H280438D-TCB3 Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1879. K4H280438D-TLA0 Samsung - 128Mb DDR SDRAM
  1880. K4H280438D-TLA2 Samsung - 128Mb DDR SDRAM
  1881. K4H280438D-TLB0 Samsung - 128Mb DDR SDRAM
  1882. K4H280438D-TLB3 Samsung - K4H280438D 128Mb D-die(x4/8) DDR Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1883. K4H280438E Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  1884. K4H280438E-TCA0 Samsung - 128Mb DDR SDRAM
  1885. K4H280438E-TCA2 Samsung - 128Mb DDR SDRAM
  1886. K4H280438E-TCB0 Samsung - 128Mb DDR SDRAM
  1887. K4H280438E-TC/LA2 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  1888. K4H280438E-TC/LAA Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  1889. K4H280438E-TC/LB0 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  1890. K4H280438E-TC/LB3 Samsung - K4H280438E ; Organization = 32Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333, 2.5V VDD
  1891. K4H280438E-TLA0 Samsung - 128Mb DDR SDRAM
  1892. K4H280438E-TLA2 Samsung - 128Mb DDR SDRAM
  1893. K4H280438E-TLB0 Samsung - 128Mb DDR SDRAM
  1894. K4H280438F Samsung - 128mb F-die Ddr Sdram Specification
  1895. K4H280438F-UC Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1896. K4H280438F-UCA0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1897. K4H280438F-UCA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1898. K4H280438F-UCB0 Samsung - 128mb F-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  1899. K4H280438F-ULA0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1900. K4H280438F-ULA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1901. K4H280438F-ULB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1902. K4H280438M-TCA0 Samsung - 128Mb DDR SDRAM
  1903. K4H280438M-TCA2 Samsung - 128Mb DDR SDRAM
  1904. K4H280438M-TCB0 Samsung - 128Mb DDR SDRAM
  1905. K4H280438M-TLA0 Samsung - 128Mb DDR SDRAM
  1906. K4H280438M-TLA2 Samsung - 128Mb DDR SDRAM
  1907. K4H280438M-TLB0 Samsung - 128Mb DDR SDRAM
  1908. K4H280838A-TCA0 Samsung - 128Mb DDR SDRAM
  1909. K4H280838A-TCA2 Samsung - 128Mb DDR SDRAM
  1910. K4H280838A-TCB0 Samsung - 128Mb DDR SDRAM
  1911. K4H280838A-TLA0 Samsung - 128Mb DDR SDRAM
  1912. K4H280838A-TLA2 Samsung - 128Mb DDR SDRAM
  1913. K4H280838A-TLB0 Samsung - 128Mb DDR SDRAM
  1914. K4H280838B Samsung - K4H280838B 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1915. K4H280838B-TCA0 Samsung - 128Mb DDR SDRAM
  1916. K4H280838B-TCA2 Samsung - 128Mb DDR SDRAM
  1917. K4H280838B-TCB0 Samsung - 128Mb DDR SDRAM
  1918. K4H280838B-TLA0 Samsung - 128Mb DDR SDRAM
  1919. K4H280838B-TLA2 Samsung - 128Mb DDR SDRAM
  1920. K4H280838B-TLB0 Samsung - 128Mb DDR SDRAM
  1921. K4H280838C Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1922. K4H280838C-TCA0 Samsung - 128Mb DDR SDRAM
  1923. K4H280838C-TCA2 Samsung - 128Mb DDR SDRAM
  1924. K4H280838C-TCB0 Samsung - 128Mb DDR SDRAM
  1925. K4H280838C-TCB3 Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1926. K4H280838C-TLA0 Samsung - 128Mb DDR SDRAM
  1927. K4H280838C-TLA2 Samsung - 128Mb DDR SDRAM
  1928. K4H280838C-TLB0 Samsung - 128Mb DDR SDRAM
  1929. K4H280838C-TLB3 Samsung - K4H280838C 128Mb DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1930. K4H280838D Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1931. K4H280838D-TCA0 Samsung - 128Mb DDR SDRAM
  1932. K4H280838D-TCA2 Samsung - 128Mb DDR SDRAM
  1933. K4H280838D-TCB0 Samsung - 128Mb DDR SDRAM
  1934. K4H280838D-TCB3 Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1935. K4H280838D-TLA0 Samsung - 128Mb DDR SDRAM
  1936. K4H280838D-TLA2 Samsung - 128Mb DDR SDRAM
  1937. K4H280838D-TLB0 Samsung - 128Mb DDR SDRAM
  1938. K4H280838D-TLB3 Samsung - K4H280838D 128Mb D-die(x4/8) DDR Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1939. K4H280838E Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1940. K4H280838E-TCA0 Samsung - 128Mb DDR SDRAM
  1941. K4H280838E-TCA2 Samsung - 128Mb DDR SDRAM
  1942. K4H280838E-TCB0 Samsung - 128Mb DDR SDRAM
  1943. K4H280838E-TC/LA2 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1944. K4H280838E-TC/LAA Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1945. K4H280838E-TC/LB0 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1946. K4H280838E-TC/LB3 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1947. K4H280838E-TLA0 Samsung - 128Mb DDR SDRAM
  1948. K4H280838E-TLA2 Samsung - 128Mb DDR SDRAM
  1949. K4H280838E-TLB0 Samsung - 128Mb DDR SDRAM
  1950. K4H280838F Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  1951. K4H280838F-TC/LB3 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  1952. K4H280838F-UCA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1953. K4H280838F-UCB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1954. K4H280838F-UCB3 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1955. K4H280838F-UC/LA2 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  1956. K4H280838F-UC/LB0 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
  1957. K4H280838F-ULA2 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1958. K4H280838F-ULB0 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1959. K4H280838F-ULB3 Samsung - 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  1960. K4H280838M-TCA0 Samsung - 128Mb DDR SDRAM
  1961. K4H280838M-TCA2 Samsung - 128Mb DDR SDRAM
  1962. K4H280838M-TCB0 Samsung - 128Mb DDR SDRAM
  1963. K4H280838M-TLA0 Samsung - 128Mb DDR SDRAM
  1964. K4H280838M-TLA2 Samsung - 128Mb DDR SDRAM
  1965. K4H280838M-TLB0 Samsung - 128Mb DDR SDRAM
  1966. K4H281638A-TCA0 Samsung - 128Mb DDR SDRAM
  1967. K4H281638A-TCA2 Samsung - 128Mb DDR SDRAM
  1968. K4H281638A-TCB0 Samsung - 128Mb DDR SDRAM
  1969. K4H281638A-TLA0 Samsung - 128Mb DDR SDRAM
  1970. K4H281638A-TLA2 Samsung - 128Mb DDR SDRAM
  1971. K4H281638A-TLB0 Samsung - 128Mb DDR SDRAM
  1972. K4H281638B Samsung - K4H281638B 128Mb DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266,2.5V VDD
  1973. K4H281638B-TCA0 Samsung - 128Mb DDR SDRAM
  1974. K4H281638B-TCA2 Samsung - 128Mb DDR SDRAM
  1975. K4H281638B-TCB0 Samsung - 128Mb DDR SDRAM
  1976. K4H281638B-TLA0 Samsung - 128Mb DDR SDRAM
  1977. K4H281638B-TLA2 Samsung - 128Mb DDR SDRAM
  1978. K4H281638B-TLB0 Samsung - 128Mb DDR SDRAM
  1979. K4H281638C-TCA0 Samsung - 128Mb DDR SDRAM
  1980. K4H281638C-TCA2 Samsung - 128Mb DDR SDRAM
  1981. K4H281638C-TCB0 Samsung - 128Mb DDR SDRAM
  1982. K4H281638C-TLA0 Samsung - 128Mb DDR SDRAM
  1983. K4H281638C-TLA2 Samsung - 128Mb DDR SDRAM
  1984. K4H281638C-TLB0 Samsung - 128Mb DDR SDRAM
  1985. K4H281638D Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  1986. K4H281638D-TCA0 Samsung - 128Mb DDR SDRAM
  1987. K4H281638D-TCA2 Samsung - 128Mb DDR SDRAM
  1988. K4H281638D-TCB0 Samsung - 128Mb DDR SDRAM
  1989. K4H281638D-TCB3 Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  1990. K4H281638D-TLA0 Samsung - 128Mb DDR SDRAM
  1991. K4H281638D-TLA2 Samsung - 128Mb DDR SDRAM
  1992. K4H281638D-TLB0 Samsung - 128Mb DDR SDRAM
  1993. K4H281638D-TLB3 Samsung - K4H281638D 128Mb D-die(x16) DDR Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = G,f ; Production Status = Eol ; Comments = DDR200/266/333,2.5V VDD
  1994. K4H281638E Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  1995. K4H281638E-TCA0 Samsung - 128Mb DDR SDRAM
  1996. K4H281638E-TCA2 Samsung - 128Mb DDR SDRAM
  1997. K4H281638E-TCB0 Samsung - 128Mb DDR SDRAM
  1998. K4H281638E-TC/LA2 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  1999. K4H281638E-TC/LB0 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2000. K4H281638E-TC/LB3 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
  2001. K4H281638E-TLA0 Samsung - 128Mb DDR SDRAM
  2002. K4H281638E-TLA2 Samsung - 128Mb DDR SDRAM
  2003. K4H281638E-TLB0 Samsung - 128Mb DDR SDRAM
  2004. K4H281638M-TCA0 Samsung - 128Mb DDR SDRAM
  2005. K4H281638M-TCA2 Samsung - 128Mb DDR SDRAM
  2006. K4H281638M-TCB0 Samsung - 128Mb DDR SDRAM
  2007. K4H281638M-TLA0 Samsung - 128Mb DDR SDRAM
  2008. K4H281638M-TLA2 Samsung - 128Mb DDR SDRAM
  2009. K4H281638M-TLB0 Samsung - 128Mb DDR SDRAM
  2010. K4H283238A-TCA0 Samsung - 128Mb DDR SDRAM
  2011. K4H283238A-TCA2 Samsung - 128Mb DDR SDRAM
  2012. K4H283238A-TCB0 Samsung - 128Mb DDR SDRAM
  2013. K4H283238A-TLA0 Samsung - 128Mb DDR SDRAM
  2014. K4H283238A-TLA2 Samsung - 128Mb DDR SDRAM
  2015. K4H283238A-TLB0 Samsung - 128Mb DDR SDRAM
  2016. K4H283238B-TCA0 Samsung - 128Mb DDR SDRAM
  2017. K4H283238B-TCA2 Samsung - 128Mb DDR SDRAM
  2018. K4H283238B-TCB0 Samsung - 128Mb DDR SDRAM
  2019. K4H283238B-TLA0 Samsung - 128Mb DDR SDRAM
  2020. K4H283238B-TLA2 Samsung - 128Mb DDR SDRAM
  2021. K4H283238B-TLB0 Samsung - 128Mb DDR SDRAM
  2022. K4H283238C-TCA0 Samsung - 128Mb DDR SDRAM
  2023. K4H283238C-TCA2 Samsung - 128Mb DDR SDRAM
  2024. K4H283238C-TCB0 Samsung - 128Mb DDR SDRAM
  2025. K4H283238C-TLA0 Samsung - 128Mb DDR SDRAM
  2026. K4H283238C-TLA2 Samsung - 128Mb DDR SDRAM
  2027. K4H283238C-TLB0 Samsung - 128Mb DDR SDRAM
  2028. K4H283238D-TCA0 Samsung - 128Mb DDR SDRAM
  2029. K4H283238D-TCA2 Samsung - 128Mb DDR SDRAM
  2030. K4H283238D-TCB0 Samsung - 128Mb DDR SDRAM
  2031. K4H283238D-TLA0 Samsung - 128Mb DDR SDRAM
  2032. K4H283238D-TLA2 Samsung - 128Mb DDR SDRAM
  2033. K4H283238D-TLB0 Samsung - 128Mb DDR SDRAM
  2034. K4H283238E-TCA0 Samsung - 128Mb DDR SDRAM
  2035. K4H283238E-TCA2 Samsung - 128Mb DDR SDRAM
  2036. K4H283238E-TCB0 Samsung - 128Mb DDR SDRAM
  2037. K4H283238E-TLA0 Samsung - 128Mb DDR SDRAM
  2038. K4H283238E-TLA2 Samsung - 128Mb DDR SDRAM
  2039. K4H283238E-TLB0 Samsung - 128Mb DDR SDRAM
  2040. K4H283238M-TCA0 Samsung - 128Mb DDR SDRAM
  2041. K4H283238M-TCA2 Samsung - 128Mb DDR SDRAM
  2042. K4H283238M-TCB0 Samsung - 128Mb DDR SDRAM
  2043. K4H283238M-TLA0 Samsung - 128Mb DDR SDRAM
  2044. K4H283238M-TLA2 Samsung - 128Mb DDR SDRAM
  2045. K4H283238M-TLB0 Samsung - 128Mb DDR SDRAM
  2046. K4H2G0638A Samsung - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2047. K4H2G0638A-UC/LCC Samsung - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2048. K4H510438 Samsung - 512mb B-die Ddr Sdram Specification
  2049. K4H510438A-TCA0 Samsung - 128Mb DDR SDRAM
  2050. K4H510438A-TCA2 Samsung - 128Mb DDR SDRAM
  2051. K4H510438A-TCB0 Samsung - 128Mb DDR SDRAM
  2052. K4H510438A-TLA0 Samsung - 128Mb DDR SDRAM
  2053. K4H510438A-TLA2 Samsung - 128Mb DDR SDRAM
  2054. K4H510438A-TLB0 Samsung - 128Mb DDR SDRAM
  2055. K4H510438B Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2056. K4H510438B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510438B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2057. K4H510438B-TCA0 Samsung - 128Mb DDR SDRAM
  2058. K4H510438B-TCA2 Samsung - 128Mb DDR SDRAM
  2059. K4H510438B-TCB0 Samsung - 128Mb DDR SDRAM
  2060. K4H510438B-TC/LA2 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2061. K4H510438B-TC/LAA Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2062. K4H510438B-TC/LB0 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2063. K4H510438B-TC/LB3 Samsung - K4H510438B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333
  2064. K4H510438B-TLA0 Samsung - 128Mb DDR SDRAM
  2065. K4H510438B-TLA2 Samsung - 128Mb DDR SDRAM
  2066. K4H510438B-TLB0 Samsung - 128Mb DDR SDRAM
  2067. K4H510438C Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2068. K4H510438C-LA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2069. K4H510438C-LB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2070. K4H510438C-LB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2071. K4H510438C-LCC Samsung - 512mb C-die Ddr Sdram Specification
  2072. K4H510438C-TCA0 Samsung - 128Mb DDR SDRAM
  2073. K4H510438C-TCA2 Samsung - 128Mb DDR SDRAM
  2074. K4H510438C-TCB0 Samsung - 128Mb DDR SDRAM
  2075. K4H510438C-TLA0 Samsung - 128Mb DDR SDRAM
  2076. K4H510438C-TLA2 Samsung - 128Mb DDR SDRAM
  2077. K4H510438C-TLB0 Samsung - 128Mb DDR SDRAM
  2078. K4H510438C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2079. K4H510438C-UC(L)/B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2080. K4H510438C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2081. K4H510438C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2082. K4H510438C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2083. K4H510438C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2084. K4H510438C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2085. K4H510438C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2086. K4H510438C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2087. K4H510438C-ZCCC Samsung - 512mb C-die Ddr Sdram Specification
  2088. K4H510438C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2089. K4H510438C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2090. K4H510438D-TCA0 Samsung - 128Mb DDR SDRAM
  2091. K4H510438D-TCA2 Samsung - 128Mb DDR SDRAM
  2092. K4H510438D-TCB0 Samsung - 128Mb DDR SDRAM
  2093. K4H510438D-TLA0 Samsung - 128Mb DDR SDRAM
  2094. K4H510438D-TLA2 Samsung - 128Mb DDR SDRAM
  2095. K4H510438D-TLB0 Samsung - 128Mb DDR SDRAM
  2096. K4H510438E-TCA0 Samsung - 128Mb DDR SDRAM
  2097. K4H510438E-TCA2 Samsung - 128Mb DDR SDRAM
  2098. K4H510438E-TCB0 Samsung - 128Mb DDR SDRAM
  2099. K4H510438E-TLA0 Samsung - 128Mb DDR SDRAM
  2100. K4H510438E-TLA2 Samsung - 128Mb DDR SDRAM
  2101. K4H510438E-TLB0 Samsung - 128Mb DDR SDRAM
  2102. K4H510438M Samsung - K4H510438M 512Mb DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  2103. K4H510438M-TCA0 Samsung - 128Mb DDR SDRAM
  2104. K4H510438M-TCA2 Samsung - 128Mb DDR SDRAM
  2105. K4H510438M-TCB0 Samsung - 128Mb DDR SDRAM
  2106. K4H510438M-TLA0 Samsung - 128Mb DDR SDRAM
  2107. K4H510438M-TLA2 Samsung - 128Mb DDR SDRAM
  2108. K4H510438M-TLB0 Samsung - 128Mb DDR SDRAM
  2109. K4H510638B Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2110. K4H510638B-TCA0 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2111. K4H510638B-TCA2 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2112. K4H510638B-TCB0 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2113. K4H510638C Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2114. K4H510638C-TCA0 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2115. K4H510638C-TCA2 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2116. K4H510638C-TCB0 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2117. K4H510638C-TCB3 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2118. K4H510638D Samsung - K4H510638D The Data Sheet You Have Searched is Under Preparation. ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
  2119. K4H510638E Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2120. K4H510638E-TC/LA2 Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2121. K4H510638E-TC/LAA Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2122. K4H510638E-TC/LB0 Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2123. K4H510738E Samsung - Stacked 512mb E-die Ddr Sdram Specification (x4/x8)
  2124. K4H510738E-TC/LA2 Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2125. K4H510738E-TC/LAA Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2126. K4H510738E-TC/LB0 Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  2127. K4H510838A-TCA0 Samsung - 128Mb DDR SDRAM
  2128. K4H510838A-TCA2 Samsung - 128Mb DDR SDRAM
  2129. K4H510838A-TCB0 Samsung - 128Mb DDR SDRAM
  2130. K4H510838A-TLA0 Samsung - 128Mb DDR SDRAM
  2131. K4H510838A-TLA2 Samsung - 128Mb DDR SDRAM
  2132. K4H510838A-TLB0 Samsung - 128Mb DDR SDRAM
  2133. K4H510838B Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2134. K4H510838B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2135. K4H510838B-N Samsung - 512mb B-die Ddr Sdram Specification 54 Stsop-ii (400mil X 441mil)
  2136. K4H510838B-TCA0 Samsung - 128Mb DDR SDRAM
  2137. K4H510838B-TCA2 Samsung - 128Mb DDR SDRAM
  2138. K4H510838B-TCB0 Samsung - 128Mb DDR SDRAM
  2139. K4H510838B-TC/LA2 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2140. K4H510838B-TC/LAA Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2141. K4H510838B-TC/LB0 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2142. K4H510838B-TC/LB3 Samsung - K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2143. K4H510838B-TLA0 Samsung - 128Mb DDR SDRAM
  2144. K4H510838B-TLA2 Samsung - 128Mb DDR SDRAM
  2145. K4H510838B-TLB0 Samsung - 128Mb DDR SDRAM
  2146. K4H510838C Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2147. K4H510838C-KCA0 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2148. K4H510838C-KCA2 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2149. K4H510838C-KCB0 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2150. K4H510838C-KCB3 Samsung - K4H510838C DDP 512Mb(x8) DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDP
  2151. K4H510838C-TCA0 Samsung - 128Mb DDR SDRAM
  2152. K4H510838C-TCA2 Samsung - 128Mb DDR SDRAM
  2153. K4H510838C-TCB0 Samsung - 128Mb DDR SDRAM
  2154. K4H510838C-TLA0 Samsung - 128Mb DDR SDRAM
  2155. K4H510838C-TLA2 Samsung - 128Mb DDR SDRAM
  2156. K4H510838C-TLB0 Samsung - 128Mb DDR SDRAM
  2157. K4H510838C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2158. K4H510838C-UC(L)/CC,B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510838C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2159. K4H510838C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2160. K4H510838C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2161. K4H510838C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2162. K4H510838C-UCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2163. K4H510838C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2164. K4H510838C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2165. K4H510838C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2166. K4H510838C-ULCC Samsung - 512Mb C-die DDR SDRAM Specification
  2167. K4H510838C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2168. K4H510838C-ZCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2169. K4H510838C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2170. K4H510838C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2171. K4H510838D Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2172. K4H510838D-LA2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2173. K4H510838D-LB0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2174. K4H510838D-LB3 Samsung - 512mb D-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2175. K4H510838D-LCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2176. K4H510838D-TCA0 Samsung - 128Mb DDR SDRAM
  2177. K4H510838D-TCA2 Samsung - 128Mb DDR SDRAM
  2178. K4H510838D-TCB0 Samsung - 128Mb DDR SDRAM
  2179. K4H510838D-TLA0 Samsung - 128Mb DDR SDRAM
  2180. K4H510838D-TLA2 Samsung - 128Mb DDR SDRAM
  2181. K4H510838D-TLB0 Samsung - 128Mb DDR SDRAM
  2182. K4H510838D-UC0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2183. K4H510838D-UC2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2184. K4H510838D-UC3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2185. K4H510838D-UCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2186. K4H510838D-UC/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2187. K4H510838E-TCA0 Samsung - 128Mb DDR SDRAM
  2188. K4H510838E-TCA2 Samsung - 128Mb DDR SDRAM
  2189. K4H510838E-TCB0 Samsung - 128Mb DDR SDRAM
  2190. K4H510838E-TLA0 Samsung - 128Mb DDR SDRAM
  2191. K4H510838E-TLA2 Samsung - 128Mb DDR SDRAM
  2192. K4H510838E-TLB0 Samsung - 128Mb DDR SDRAM
  2193. K4H510838M Samsung - K4H510838M 512Mb DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  2194. K4H510838M-TCA0 Samsung - 128Mb DDR SDRAM
  2195. K4H510838M-TCA2 Samsung - 128Mb DDR SDRAM
  2196. K4H510838M-TCB0 Samsung - 128Mb DDR SDRAM
  2197. K4H510838M-TLA0 Samsung - 128Mb DDR SDRAM
  2198. K4H510838M-TLA2 Samsung - 128Mb DDR SDRAM
  2199. K4H510838M-TLB0 Samsung - 128Mb DDR SDRAM
  2200. K4H511638 Samsung - 512Mb C-die DDR SDRAM Specification
  2201. K4H511638A-TCA0 Samsung - 128Mb DDR SDRAM
  2202. K4H511638A-TCA2 Samsung - 128Mb DDR SDRAM
  2203. K4H511638A-TCB0 Samsung - 128Mb DDR SDRAM
  2204. K4H511638A-TLA0 Samsung - 128Mb DDR SDRAM
  2205. K4H511638A-TLA2 Samsung - 128Mb DDR SDRAM
  2206. K4H511638A-TLB0 Samsung - 128Mb DDR SDRAM
  2207. K4H511638B Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2208. K4H511638B-G Samsung - 512mb B-die Ddr Sdram Specification
  2209. K4H511638B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2210. K4H511638B-TCA0 Samsung - 128Mb DDR SDRAM
  2211. K4H511638B-TCA2 Samsung - 128Mb DDR SDRAM
  2212. K4H511638B-TCB0 Samsung - 128Mb DDR SDRAM
  2213. K4H511638B-TC/LA2 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2214. K4H511638B-TC/LB0 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2215. K4H511638B-TC/LB3 Samsung - K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Customer Sample(Q3\'03) ; Comments = DDR266/333/400
  2216. K4H511638B-TLA0 Samsung - 128Mb DDR SDRAM
  2217. K4H511638B-TLA2 Samsung - 128Mb DDR SDRAM
  2218. K4H511638B-TLB0 Samsung - 128Mb DDR SDRAM
  2219. K4H511638C Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2220. K4H511638C-TCA0 Samsung - 128Mb DDR SDRAM
  2221. K4H511638C-TCA2 Samsung - 128Mb DDR SDRAM
  2222. K4H511638C-TCB0 Samsung - 128Mb DDR SDRAM
  2223. K4H511638C-TLA0 Samsung - 128Mb DDR SDRAM
  2224. K4H511638C-TLA2 Samsung - 128Mb DDR SDRAM
  2225. K4H511638C-TLB0 Samsung - 128Mb DDR SDRAM
  2226. K4H511638C-UC Samsung - 512Mb C-die DDR SDRAM Specification
  2227. K4H511638C-UC(L)/CC,B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2228. K4H511638C-UCA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2229. K4H511638C-UCB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2230. K4H511638C-UCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2231. K4H511638C-UCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2232. K4H511638C-ULA2 Samsung - 512Mb C-die DDR SDRAM Specification
  2233. K4H511638C-ULB0 Samsung - 512Mb C-die DDR SDRAM Specification
  2234. K4H511638C-ULB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2235. K4H511638C-ULCC Samsung - 512Mb C-die DDR SDRAM Specification
  2236. K4H511638C-Z Samsung - 512Mb C-die DDR SDRAM Specification
  2237. K4H511638C-ZCB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2238. K4H511638C-ZCCC Samsung - 512Mb C-die DDR SDRAM Specification
  2239. K4H511638C-ZLB3 Samsung - 512Mb C-die DDR SDRAM Specification
  2240. K4H511638C-ZLCC Samsung - 512Mb C-die DDR SDRAM Specification
  2241. K4H511638D Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2242. K4H511638D-LA2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2243. K4H511638D-LB0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2244. K4H511638D-LB3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2245. K4H511638D-LCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2246. K4H511638D-TCA0 Samsung - 128Mb DDR SDRAM
  2247. K4H511638D-TCA2 Samsung - 128Mb DDR SDRAM
  2248. K4H511638D-TCB0 Samsung - 128Mb DDR SDRAM
  2249. K4H511638D-TLA0 Samsung - 128Mb DDR SDRAM
  2250. K4H511638D-TLA2 Samsung - 128Mb DDR SDRAM
  2251. K4H511638D-TLB0 Samsung - 128Mb DDR SDRAM
  2252. K4H511638D-UC0 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2253. K4H511638D-UC2 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2254. K4H511638D-UC3 Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2255. K4H511638D-UCC Samsung - 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2256. K4H511638D-UC/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
  2257. K4H511638E-TCA0 Samsung - 128Mb DDR SDRAM
  2258. K4H511638E-TCA2 Samsung - 128Mb DDR SDRAM
  2259. K4H511638E-TCB0 Samsung - 128Mb DDR SDRAM
  2260. K4H511638E-TLA0 Samsung - 128Mb DDR SDRAM
  2261. K4H511638E-TLA2 Samsung - 128Mb DDR SDRAM
  2262. K4H511638E-TLB0 Samsung - 128Mb DDR SDRAM
  2263. K4H511638M-TCA0 Samsung - 128Mb DDR SDRAM
  2264. K4H511638M-TCA2 Samsung - 128Mb DDR SDRAM
  2265. K4H511638M-TCB0 Samsung - 128Mb DDR SDRAM
  2266. K4H511638M-TLA0 Samsung - 128Mb DDR SDRAM
  2267. K4H511638M-TLA2 Samsung - 128Mb DDR SDRAM
  2268. K4H511638M-TLB0 Samsung - 128Mb DDR SDRAM
  2269. K4H513238A-TCA0 Samsung - 128Mb DDR SDRAM
  2270. K4H513238A-TCA2 Samsung - 128Mb DDR SDRAM
  2271. K4H513238A-TCB0 Samsung - 128Mb DDR SDRAM
  2272. K4H513238A-TLA0 Samsung - 128Mb DDR SDRAM
  2273. K4H513238A-TLA2 Samsung - 128Mb DDR SDRAM
  2274. K4H513238A-TLB0 Samsung - 128Mb DDR SDRAM
  2275. K4H513238B-TCA0 Samsung - 128Mb DDR SDRAM
  2276. K4H513238B-TCA2 Samsung - 128Mb DDR SDRAM
  2277. K4H513238B-TCB0 Samsung - 128Mb DDR SDRAM
  2278. K4H513238B-TLA0 Samsung - 128Mb DDR SDRAM
  2279. K4H513238B-TLA2 Samsung - 128Mb DDR SDRAM
  2280. K4H513238B-TLB0 Samsung - 128Mb DDR SDRAM
  2281. K4H513238C-TCA0 Samsung - 128Mb DDR SDRAM
  2282. K4H513238C-TCA2 Samsung - 128Mb DDR SDRAM
  2283. K4H513238C-TCB0 Samsung - 128Mb DDR SDRAM
  2284. K4H513238C-TLA0 Samsung - 128Mb DDR SDRAM
  2285. K4H513238C-TLA2 Samsung - 128Mb DDR SDRAM
  2286. K4H513238C-TLB0 Samsung - 128Mb DDR SDRAM
  2287. K4H513238D-TCA0 Samsung - 128Mb DDR SDRAM
  2288. K4H513238D-TCA2 Samsung - 128Mb DDR SDRAM
  2289. K4H513238D-TCB0 Samsung - 128Mb DDR SDRAM
  2290. K4H513238D-TLA0 Samsung - 128Mb DDR SDRAM
  2291. K4H513238D-TLA2 Samsung - 128Mb DDR SDRAM
  2292. K4H513238D-TLB0 Samsung - 128Mb DDR SDRAM
  2293. K4H513238E-TCA0 Samsung - 128Mb DDR SDRAM
  2294. K4H513238E-TCA2 Samsung - 128Mb DDR SDRAM
  2295. K4H513238E-TCB0 Samsung - 128Mb DDR SDRAM
  2296. K4H513238E-TLA0 Samsung - 128Mb DDR SDRAM
  2297. K4H513238E-TLA2 Samsung - 128Mb DDR SDRAM
  2298. K4H513238E-TLB0 Samsung - 128Mb DDR SDRAM
  2299. K4H513238M-TCA0 Samsung - 128Mb DDR SDRAM
  2300. K4H513238M-TCA2 Samsung - 128Mb DDR SDRAM
  2301. K4H513238M-TCB0 Samsung - 128Mb DDR SDRAM
  2302. K4H513238M-TLA0 Samsung - 128Mb DDR SDRAM
  2303. K4H513238M-TLA2 Samsung - 128Mb DDR SDRAM
  2304. K4H513238M-TLB0 Samsung - 128Mb DDR SDRAM
  2305. K4H56038D-TC Samsung - 256mb D-die Ddr400 Sdram Specification
  2306. K4H560438 Samsung - 128Mb DDR SDRAM
  2307. K4H560438A-TCA0 Samsung - 128Mb DDR SDRAM
  2308. K4H560438A-TCA2 Samsung - 128Mb DDR SDRAM
  2309. K4H560438A-TCB0 Samsung - 128Mb DDR SDRAM
  2310. K4H560438A-TLA0 Samsung - 128Mb DDR SDRAM
  2311. K4H560438A-TLA2 Samsung - 128Mb DDR SDRAM
  2312. K4H560438A-TLB0 Samsung - 128Mb DDR SDRAM
  2313. K4H560438B Samsung - K4H560438B 256Mb DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/266
  2314. K4H560438B-TCA0 Samsung - 128Mb DDR SDRAM
  2315. K4H560438B-TCA2 Samsung - 128Mb DDR SDRAM
  2316. K4H560438B-TCB0 Samsung - 128Mb DDR SDRAM
  2317. K4H560438B-TLA0 Samsung - 128Mb DDR SDRAM
  2318. K4H560438B-TLA2 Samsung - 128Mb DDR SDRAM
  2319. K4H560438B-TLB0 Samsung - 128Mb DDR SDRAM
  2320. K4H560438C Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2321. K4H560438C-CA2 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2322. K4H560438C-CB3 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2323. K4H560438C-LA2 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2324. K4H560438C-LB3 Samsung - K4H560438C 256Mb C-die(x4,x8)DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2325. K4H560438C-TCA0 Samsung - 128Mb DDR SDRAM
  2326. K4H560438C-TCA2 Samsung - 128Mb DDR SDRAM
  2327. K4H560438C-TCB0 Samsung - 128Mb DDR SDRAM
  2328. K4H560438C-TLA0 Samsung - 128Mb DDR SDRAM
  2329. K4H560438C-TLA2 Samsung - 128Mb DDR SDRAM
  2330. K4H560438C-TLB0 Samsung - 128Mb DDR SDRAM
  2331. K4H560438D Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2332. K4H560438D-GC Samsung - Ddr 256mb
  2333. K4H560438D-GCA2 Samsung - DDR 256Mb
  2334. K4H560438D-GCB0 Samsung - DDR 256Mb
  2335. K4H560438D-GCB3 Samsung - DDR 256Mb
  2336. K4H560438D-GLA2 Samsung - DDR 256Mb
  2337. K4H560438D-GLB0 Samsung - DDR 256Mb
  2338. K4H560438D-GLB3 Samsung - DDR 256Mb
  2339. K4H560438D-NC Samsung - 256mb Stsopii
  2340. K4H560438D-TC Samsung - 256mb
  2341. K4H560438D-TCA0 Samsung - 128Mb DDR SDRAM
  2342. K4H560438D-TCA2 Samsung - 128Mb DDR SDRAM
  2343. K4H560438D-TCB0 Samsung - 128Mb DDR SDRAM
  2344. K4H560438D-TC/LA0 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2345. K4H560438D-TC/LA2 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2346. K4H560438D-TC/LB0 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2347. K4H560438D-TC/LB3 Samsung - K4H560438D 256Mb D-die DDR Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333
  2348. K4H560438D-TLA0 Samsung - 128Mb DDR SDRAM
  2349. K4H560438D-TLA2 Samsung - 128Mb DDR SDRAM
  2350. K4H560438D-TLB0 Samsung - 128Mb DDR SDRAM
  2351. K4H560438E Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2352. K4H560438E-GC Samsung - 256mb E-die Ddr Sdram Specification 60ball Fbga (x4/x8)
  2353. K4H560438E-GCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2354. K4H560438E-GCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2355. K4H560438E-GCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2356. K4H560438E-GCC4 Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2357. K4H560438E-GCCC Samsung - 256mb E-die Ddr 400 Sdram Specification 60ball Fbga (x4/x8)
  2358. K4H560438E-GLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2359. K4H560438E-GLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2360. K4H560438E-GLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2361. K4H560438E-NC Samsung - 256mb E-die Ddr Sdram Specification 54pin Stsop(ii)
  2362. K4H560438E-NCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2363. K4H560438E-NCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2364. K4H560438E-NCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2365. K4H560438E-NLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2366. K4H560438E-NLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2367. K4H560438E-NLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2368. K4H560438E-TC Samsung - 256mb E-die Ddr Sdram Specification 66 Tsop-ii
  2369. K4H560438E-TCA0 Samsung - 128Mb DDR SDRAM
  2370. K4H560438E-TCA2 Samsung - 128Mb DDR SDRAM
  2371. K4H560438E-TCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2372. K4H560438E-TCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2373. K4H560438E-TCB0 Samsung - 128Mb DDR SDRAM
  2374. K4H560438E-TCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2375. K4H560438E-TCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2376. K4H560438E-TC/LA2 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2377. K4H560438E-TC/LAA Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2378. K4H560438E-TC/LB0 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2379. K4H560438E-TC/LB3 Samsung - K4H560438E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2380. K4H560438E-TLA0 Samsung - 128Mb DDR SDRAM
  2381. K4H560438E-TLA2 Samsung - 128Mb DDR SDRAM
  2382. K4H560438E-TLA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2383. K4H560438E-TLAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2384. K4H560438E-TLB0 Samsung - 128Mb DDR SDRAM
  2385. K4H560438E-TLB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2386. K4H560438E-TLB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2387. K4H560438E-UC Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2388. K4H560438E-UCA2 Samsung - 256mb E-die Ddr Sdram Specification 66 Tsop-ii With Pb-free (rohs Compliant)
  2389. K4H560438E-UCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2390. K4H560438E-UCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2391. K4H560438E-UCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2392. K4H560438E-ULA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2393. K4H560438E-ULAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2394. K4H560438E-ULB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2395. K4H560438E-ULB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2396. K4H560438E-VC Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2397. K4H560438E-VCA2 Samsung - 256mb E-die Ddr Sdram Specification 54 Stsop-ii With Pb-free (rohs Compliant)
  2398. K4H560438E-VCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2399. K4H560438E-VCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2400. K4H560438E-VLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2401. K4H560438E-VLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2402. K4H560438E-VLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2403. K4H560438E-ZC Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2404. K4H560438E-ZCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2405. K4H560438E-ZCB0 Samsung - 256mb E-die Ddr Sdram Specification 60 Fbga With Pb-free (rohs Compliant)
  2406. K4H560438E-ZCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2407. K4H560438E-ZLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2408. K4H560438E-ZLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2409. K4H560438E-ZLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2410. K4H560438M-TCA0 Samsung - 128Mb DDR SDRAM
  2411. K4H560438M-TCA2 Samsung - 128Mb DDR SDRAM
  2412. K4H560438M-TCB0 Samsung - 128Mb DDR SDRAM
  2413. K4H560438M-TLA0 Samsung - 128Mb DDR SDRAM
  2414. K4H560438M-TLA2 Samsung - 128Mb DDR SDRAM
  2415. K4H560438M-TLB0 Samsung - 128Mb DDR SDRAM
  2416. K4H560838A-TCA0 Samsung - 128Mb DDR SDRAM
  2417. K4H560838A-TCA2 Samsung - 128Mb DDR SDRAM
  2418. K4H560838A-TCB0 Samsung - 128Mb DDR SDRAM
  2419. K4H560838A-TLA0 Samsung - 128Mb DDR SDRAM
  2420. K4H560838A-TLA2 Samsung - 128Mb DDR SDRAM
  2421. K4H560838A-TLB0 Samsung - 128Mb DDR SDRAM
  2422. K4H560838B Samsung - 128Mb DDR SDRAM
  2423. K4H560838B-TCA0 Samsung - 128Mb DDR SDRAM
  2424. K4H560838B-TCA2 Samsung - 128Mb DDR SDRAM
  2425. K4H560838B-TCB0 Samsung - 128Mb DDR SDRAM
  2426. K4H560838B-TLA0 Samsung - 128Mb DDR SDRAM
  2427. K4H560838B-TLA2 Samsung - 128Mb DDR SDRAM
  2428. K4H560838B-TLB0 Samsung - 128Mb DDR SDRAM
  2429. K4H560838C Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2430. K4H560838C-CA2 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2431. K4H560838C-CB3 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2432. K4H560838C-LA2 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2433. K4H560838C-LB3 Samsung - K4H560838C 256Mb C-die(x4/x8)DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200,DDR266,DDR333
  2434. K4H560838C-TCA0 Samsung - 128Mb DDR SDRAM
  2435. K4H560838C-TCA2 Samsung - 128Mb DDR SDRAM
  2436. K4H560838C-TCB0 Samsung - 128Mb DDR SDRAM
  2437. K4H560838C-TLA0 Samsung - 128Mb DDR SDRAM
  2438. K4H560838C-TLA2 Samsung - 128Mb DDR SDRAM
  2439. K4H560838C-TLB0 Samsung - 128Mb DDR SDRAM
  2440. K4H560838D Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2441. K4H560838D-GCA2 Samsung - DDR 256Mb
  2442. K4H560838D-GCB0 Samsung - DDR 256Mb
  2443. K4H560838D-GCB3 Samsung - DDR 256Mb
  2444. K4H560838D-GLA2 Samsung - DDR 256Mb
  2445. K4H560838D-GLB0 Samsung - DDR 256Mb
  2446. K4H560838D-GLB3 Samsung - DDR 256Mb
  2447. K4H560838D-TCA0 Samsung - 128Mb DDR SDRAM
  2448. K4H560838D-TCA2 Samsung - 128Mb DDR SDRAM
  2449. K4H560838D-TCB0 Samsung - 128Mb DDR SDRAM
  2450. K4H560838D-TCC4 Samsung - 256Mb D-die DDR400 SDRAM Specification
  2451. K4H560838D-TCCC Samsung - 256Mb D-die DDR400 SDRAM Specification
  2452. K4H560838D-TC/LA0 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2453. K4H560838D-TC/LA2 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2454. K4H560838D-TC/LB0 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2455. K4H560838D-TC/LB3 Samsung - K4H560838D 256Mb D-die DDR Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  2456. K4H560838D-TLA0 Samsung - 128Mb DDR SDRAM
  2457. K4H560838D-TLA2 Samsung - 128Mb DDR SDRAM
  2458. K4H560838D-TLB0 Samsung - 128Mb DDR SDRAM
  2459. K4H560838E Samsung - DDR SDRAM 256Mb E-die (x4, x8)
  2460. K4H560838E-GCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2461. K4H560838E-GCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2462. K4H560838E-GCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2463. K4H560838E-GCC4 Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2464. K4H560838E-GCCC Samsung - 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
  2465. K4H560838E-GLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2466. K4H560838E-GLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2467. K4H560838E-GLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
  2468. K4H560838E-NCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2469. K4H560838E-NCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2470. K4H560838E-NCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2471. K4H560838E-NLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2472. K4H560838E-NLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2473. K4H560838E-NLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
  2474. K4H560838E-TCA0 Samsung - 128Mb DDR SDRAM
  2475. K4H560838E-TCA2 Samsung - 128Mb DDR SDRAM
  2476. K4H560838E-TCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2477. K4H560838E-TCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2478. K4H560838E-TCB0 Samsung - 128Mb DDR SDRAM
  2479. K4H560838E-TCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2480. K4H560838E-TCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2481. K4H560838E-TC/LA2 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2482. K4H560838E-TC/LAA Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2483. K4H560838E-TC/LB0 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2484. K4H560838E-TC/LB3 Samsung - K4H560838E DDR Sdram 256Mb E-die (x4, X8) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2485. K4H560838E-TLA0 Samsung - 128Mb DDR SDRAM
  2486. K4H560838E-TLA2 Samsung - 128Mb DDR SDRAM
  2487. K4H560838E-TLA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2488. K4H560838E-TLAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2489. K4H560838E-TLB0 Samsung - 128Mb DDR SDRAM
  2490. K4H560838E-TLB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2491. K4H560838E-TLB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II
  2492. K4H560838E-UCA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2493. K4H560838E-UCAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2494. K4H560838E-UCB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2495. K4H560838E-UCB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2496. K4H560838E-ULA2 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2497. K4H560838E-ULAA Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2498. K4H560838E-ULB0 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2499. K4H560838E-ULB3 Samsung - 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
  2500. K4H560838E-VCA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2501. K4H560838E-VCB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2502. K4H560838E-VCB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2503. K4H560838E-VLA2 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2504. K4H560838E-VLB0 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2505. K4H560838E-VLB3 Samsung - 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
  2506. K4H560838E-ZCA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2507. K4H560838E-ZCB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2508. K4H560838E-ZCB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2509. K4H560838E-ZLA2 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2510. K4H560838E-ZLB0 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2511. K4H560838E-ZLB3 Samsung - 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
  2512. K4H560838F Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2513. K4H560838F-TC Samsung - 256mb F-die Ddr400 Sdram Specification
  2514. K4H560838F-TCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  2515. K4H560838F-TCCC Samsung - 256Mb F-die DDR400 SDRAM Specification
  2516. K4H560838F-TC/LA2 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2517. K4H560838F-TC/LAA Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2518. K4H560838F-TC/LB0 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2519. K4H560838F-TC/LB3 Samsung - K4H560838F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  2520. K4H560838F-UCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  2521. K4H560838F-UCCC Samsung - 256mb F-die Ddr400 Sdram Specification
  2522. K4H560838M-TCA0 Samsung - 128Mb DDR SDRAM
  2523. K4H560838M-TCA2 Samsung - 128Mb DDR SDRAM
  2524. K4H560838M-TCB0 Samsung - 128Mb DDR SDRAM
  2525. K4H560838M-TLA0 Samsung - 128Mb DDR SDRAM
  2526. K4H560838M-TLA2 Samsung - 128Mb DDR SDRAM
  2527. K4H560838M-TLB0 Samsung - 128Mb DDR SDRAM
  2528. K4H561638A-TCA0 Samsung - 128Mb DDR SDRAM
  2529. K4H561638A-TCA2 Samsung - 128Mb DDR SDRAM
  2530. K4H561638A-TCB0 Samsung - 128Mb DDR SDRAM
  2531. K4C560838C Samsung - K4C560838C 256Mb Network-dram ; Organization = 32Mx8 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  2532. K4C560838C-TC Samsung - K4C560838C 256Mb Network-dram ; Organization = 32Mx8 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  2533. K4C560838C-TCD3 Samsung - 256mb Network-dram
  2534. K4C560838C-TCD4 Samsung - 256Mb Network-DRAM
  2535. K4C560838C-TCDA Samsung - 256Mb Network-DRAM
  2536. K4C561638C Samsung - K4C561638C 256Mb Network-dram ; Organization = 16Mx16 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  2537. K4C561638C-TC Samsung - K4C561638C 256Mb Network-dram ; Organization = 16Mx16 ; Voltage(V) = 2.5 ; Refresh = 8K/64ms ; Bank/ Interface = 4B/SSTL2 ; Speed(MHz) = D4,DA,D3 ; TRAC(ns) = 22~26 ; Package = 66TSOP2 ; Production Status = Customer Sample ; Comments = -
  2538. K4C561638C-TCD3 Samsung - 256Mb Network-DRAM
  2539. K4C561638C-TCD4 Samsung - 256Mb Network-DRAM
  2540. K4C561638C-TCD4000 Samsung - 256Mb Network-DRAM
  2541. K4C561638C-TCDA Samsung - 256Mb Network-DRAM
  2542. K4C89083AF-ACF5 Samsung - 288mb X18 Network-dram2 Specification
  2543. K4C89083AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2544. K4C89083AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2545. K4C89083AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2546. K4C89083AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2547. K4C89083AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2548. K4C89083AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2549. K4C89083AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2550. K4C89083AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2551. K4C89083AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2552. K4C89083AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2553. K4C89083AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2554. K4C89093AF Samsung - K4C89093AF 8,388,608-WORDS X 4 Banks X 9-BITS Double Data Rate Network-dram ; Organization = 32Mx9 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 60FBGA ; Production Status = Engineering Sample:Q4\'2003 ; Comments = Target Spec
  2555. K4C89093AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2556. K4C89093AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2557. K4C89093AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2558. K4C89093AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2559. K4C89093AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2560. K4C89093AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2561. K4C89093AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2562. K4C89093AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2563. K4C89093AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2564. K4C89093AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2565. K4C89093AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2566. K4C89093AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2567. K4C89163AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2568. K4C89163AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2569. K4C89163AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2570. K4C89163AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2571. K4C89163AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2572. K4C89163AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2573. K4C89163AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2574. K4C89163AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2575. K4C89163AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2576. K4C89163AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2577. K4C89163AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2578. K4C89163AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2579. K4C89183AF Samsung - 288Mb x18 Network-DRAM2 Specification
  2580. K4C89183AF-ACF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2581. K4C89183AF-ACF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2582. K4C89183AF-ACFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2583. K4C89183AF-AIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2584. K4C89183AF-AIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2585. K4C89183AF-AIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2586. K4C89183AF-GCF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2587. K4C89183AF-GCF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2588. K4C89183AF-GCFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2589. K4C89183AF-GIF5 Samsung - 288Mb x18 Network-DRAM2 Specification
  2590. K4C89183AF-GIF6 Samsung - 288Mb x18 Network-DRAM2 Specification
  2591. K4C89183AF-GIFB Samsung - 288Mb x18 Network-DRAM2 Specification
  2592. K4C89363AF Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  2593. K4C89363AF-GCF5 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  2594. K4C89363AF-GCF6 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  2595. K4C89363AF-GCFB Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  2596. K4C89363AF-GIF5 Samsung - K4C89363AF 2,097,152-WORDS X 4 Banks X 36-BITS Double Data Rate Network-dram ; Organization = 8Mx36 ; Voltage(V) = 2.5 ; Refresh = 8K/32ms ; Bank/ Interface = 4B/SSTL_1.8 ; Speed(MHz) = F6,FB,F5 ; TRAC(ns) = 20~25 ; Package = 144FBGA ; Production Status = Engineering Sample:4Q\'2003 ; Comments = Target Spec
  2597. K4D261638 Samsung - 128mbit Gddr Sdram
  2598. K4D261638E Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2599. K4D261638E-TC2A Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2600. K4D261638E-TC33 Samsung - 2m X 16bit X 4 Banks Double Data Rate Synchronous Dram
  2601. K4D261638E-TC36 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2602. K4D261638E-TC40 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2603. K4D261638E-TC50 Samsung - 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2604. K4D261638F Samsung - 128Mbit GDDR SDRAM
  2605. K4D261638F-TC25 Samsung - 128Mbit GDDR SDRAM
  2606. K4D261638F-TC2A Samsung - 128Mbit GDDR SDRAM
  2607. K4D261638F-TC33 Samsung - 128Mbit GDDR SDRAM
  2608. K4D261638F-TC36 Samsung - 128Mbit GDDR SDRAM
  2609. K4D261638F-TC40 Samsung - 128Mbit GDDR SDRAM
  2610. K4D261638F-TC50 Samsung - 128Mbit GDDR SDRAM
  2611. K4D263238A Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2612. K4D263238A-GC Samsung - K4D263238A 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 3.3,3.6,4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  2613. K4D263238A-GC33 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2614. K4D263238A-GC36 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  2615. K4D263238A-GC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2616. K4D263238A-GC45 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2617. K4D263238A-GC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2618. K4D263238D Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2619. K4D263238D-QC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2620. K4D263238D-QC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2621. K4D263238E Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2622. K4D263238E-GC Samsung - K4D263238E-GC 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8,2.375~2.94 ; Speed(ns) = 2.5,2A,3.3,3.6,4.0,4.5 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  2623. K4D263238E-GC25 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2624. K4D263238E-GC2A Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2625. K4D263238E-GC33 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2626. K4D263238E-GC36 Samsung - 1m X 32bit X 4 Banks Graphic Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  2627. K4D263238E-GC40 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2628. K4D263238E-GC45 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2629. K4D263238F Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2630. K4D263238F-QC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
  2631. K4D263238F-QC50 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
  2632. K4D263238G-GC Samsung - 128Mbit GDDR SDRAM
  2633. K4D263238G-GC2A Samsung - 128Mbit GDDR SDRAM
  2634. K4D263238G-GC33 Samsung - 128Mbit GDDR SDRAM
  2635. K4D263238G-GC36 Samsung - 128Mbit GDDR SDRAM
  2636. K4D263238G-VC Samsung - 128mbit Gddr Sdram
  2637. K4D263238M Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  2638. K4D263238M-QC45 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  2639. K4D263238M-QC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  2640. K4D263238M-QC55 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  2641. K4D263238M-QC60 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe and Dll
  2642. K4D26323AA Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  2643. K4D26323AA-GL Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  2644. K4D26323AA-GL40 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  2645. K4D26323AA-GL45 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  2646. K4D26323AA-GL50 Samsung - K4D26323AA 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
  2647. K4D26323QG Samsung - 128Mbit GDDR SDRAM
  2648. K4D26323QG-GC25 Samsung - 128mbit Gddr Sdram
  2649. K4D26323QG-GC2A Samsung - 128Mbit GDDR SDRAM
  2650. K4D26323QG-GC33 Samsung - 128Mbit GDDR SDRAM
  2651. K4D26323RA Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe and Dll
  2652. K4D26323RA-GC Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  2653. K4D26323RA-GC2A Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  2654. K4D26323RA-GC33 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  2655. K4D26323RA-GC36 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
  2656. K4D28163HD Samsung - 128mbit Ddr Sdram
  2657. K4D28163HD-TC36 Samsung - 128Mbit DDR SDRAM
  2658. K4D28163HD-TC40 Samsung - 128Mbit DDR SDRAM
  2659. K4D28163HD-TC50 Samsung - 128Mbit DDR SDRAM
  2660. K4D28163HD-TC60 Samsung - 128Mbit DDR SDRAM
  2661. K4D551638D Samsung - 256mbit Gddr Sdram
  2662. K4D551638D-TC Samsung - 256Mbit GDDR SDRAM
  2663. K4D551638D-TC2A Samsung - 256Mbit GDDR SDRAM
  2664. K4D551638D-TC33 Samsung - 256Mbit GDDR SDRAM
  2665. K4D551638D-TC36 Samsung - 256Mbit GDDR SDRAM
  2666. K4D551638D-TC40 Samsung - 256Mbit GDDR SDRAM
  2667. K4D551638D-TC45 Samsung - 256Mbit GDDR SDRAM
  2668. K4D551638D-TC50 Samsung - 256Mbit GDDR SDRAM
  2669. K4D551638D-TC60 Samsung - 256Mbit GDDR SDRAM
  2670. K4D551638F-TC Samsung - 256Mbit GDDR SDRAM
  2671. K4D551638F-TC33 Samsung - 256Mbit GDDR SDRAM
  2672. K4D551638F-TC36 Samsung - 256Mbit GDDR SDRAM
  2673. K4D551638F-TC40 Samsung - 256mbit Gddr Sdram
  2674. K4D551638F-TC50 Samsung - 256Mbit GDDR SDRAM
  2675. K4D551638F-TC60 Samsung - 256Mbit GDDR SDRAM
  2676. K4D553235F-GC Samsung - 256M GDDR SDRAM
  2677. K4D553235F-GC25 Samsung - 256M GDDR SDRAM
  2678. K4D553235F-GC2A Samsung - 256m Gddr Sdram
  2679. K4D553235F-GC33 Samsung - 256M GDDR SDRAM
  2680. K4D553238E Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  2681. K4D553238E-JC Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  2682. K4D553238E-JC33 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  2683. K4D553238E-JC36 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  2684. K4D553238E-JC40 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  2685. K4D553238E-JC50 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
  2686. K4D553238F Samsung - 256mbit Gddr Sdram
  2687. K4D553238F-GC Samsung - 256Mbit GDDR SDRAM
  2688. K4D553238F-GC2A Samsung - 256Mbit GDDR SDRAM
  2689. K4D553238F-GC33 Samsung - 256Mbit GDDR SDRAM
  2690. K4D553238F-GC36 Samsung - 256Mbit GDDR SDRAM
  2691. K4D553238F-JC Samsung - 256Mbit GDDR SDRAM
  2692. K4D553238F-JC2A Samsung - 256Mbit GDDR SDRAM
  2693. K4D553238F-JC33 Samsung - 256Mbit GDDR SDRAM
  2694. K4D553238F-JC36 Samsung - 256mbit Gddr Sdram
  2695. K4D553238F-JC40 Samsung - 256Mbit GDDR SDRAM
  2696. K4D553238F-JC50 Samsung - 256Mbit GDDR SDRAM
  2697. K4D623237A Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  2698. K4D623237A-QC55 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  2699. K4D623237A-QC60 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  2700. K4D623237A-QC70 Samsung - K4D623237A 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  2701. K4D623237M Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2702. K4D623237M-QC10 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2703. K4D623237M-QC60 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2704. K4D623237M-QC70 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2705. K4D623237M-QC80 Samsung - K4D623237M 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM With Bi-directional Data Strobe ; Organization = 2Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 60,70,80,10 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2706. K4D623238B Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2707. K4D623238B-GC Samsung - 64mbit Ddr Sdram
  2708. K4D623238B-GC33 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2709. K4D623238B-GC40 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2710. K4D623238B-GC45 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2711. K4D623238B-GC50 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2712. K4D623238B-GC55 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2713. K4D623238B-GC60 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2714. K4D623238B-GC/L33 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2715. K4D623238B-GC/L40 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2716. K4D623238B-GC/L45 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2717. K4D623238B-GC/L50 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2718. K4D623238B-GC/L55 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2719. K4D623238B-GC/L60 Samsung - K4D623238B 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8 ; Speed(ns) = 3.3,4.0,4.5,5.0,5.5,6.0 ; Refresh = 2K/16ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol Announced(Jan.\'03) ; Comments = -
  2720. K4D623238F Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  2721. K4D623238F-QC Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  2722. K4D623238F-QC40 Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  2723. K4D623238F-QC50 Samsung - K4D623238F 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 4.0,5.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol Announced(Dec.\'02) ; Comments = -
  2724. K4D62323HA Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  2725. K4D62323HA-QC55 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  2726. K4D62323HA-QC60 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  2727. K4D62323HA-QC70 Samsung - K4D62323HA 512K X 32Bit X 4 Banks Double Data Rate Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.0,5.5,6.0,7.0 ; Refresh = 2K/16ms ; Package = 100TQFP ; Interface = SSTL_2 ; Production Status = Eol ; Comments = -
  2728. K4D64163HE Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  2729. K4D64163HE-TC40 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  2730. K4D64163HE-TC45 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  2731. K4D64163HE-TC50 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  2732. K4D64163HE-TC55 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  2733. K4D64163HE-TC60 Samsung - K4D64163HE 1M X 16Bit X 4 Banks Double Data Rate Synchronous RAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/2.5 ; Speed(ns) = 4.0,4.5,5.0,5.5,6.0 ; Refresh = 4K/64ms ; Package = 66TSOP2 ; Interface = SSTL_2 ; Production Status = Eol ; Comments = Converted Into K4D64163HF
  2734. K4D64163HF Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2735. K4D64163HF-TC33 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2736. K4D64163HF-TC36 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2737. K4D64163HF-TC40 Samsung - 1m X 16bit X 4 Banks Double Data Rate Synchronous Dram
  2738. K4D64163HF-TC50 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2739. K4D64163HF-TC60 Samsung - 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
  2740. K142 Sanyo - Very High-Speed Switching Applications
  2741. K1462 Sanyo - Very High-Speed Switching Applications
  2742. k246 Sanyo - Ultrahigh-Speed Switching Applications
  2743. K2161 Sanyo - Very High-Speed Switching Applications
  2744. K1.1 Semikron - For Stud Devices
  2745. K1.1-M16 Semikron - For stud devices
  2746. K25C81 Semtech - Versatile Pc/xc/at/ps/2 Compatible Keyboard Encoder
  2747. K25C81-FB Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  2748. K25C81-FN Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  2749. K25C81-P Semtech - Versatile PC/XC/AT/PS/2 Compatible Keyboard Encoder
  2750. K2185 Shindengen - VX-2 Series Power MOSFET(500V5A)
  2751. K1V10 Shindengen - Sidac
  2752. K1V11 Shindengen - Sidac
  2753. K1V12 Shindengen - Sidac
  2754. K1V14 Shindengen - Sidac
  2755. K1V16 Shindengen - Sidac
  2756. K1V18 Shindengen - Sidac
  2757. K1V22 Shindengen - Sidac
  2758. K1V22W Shindengen - Sidac
  2759. K1V24 Shindengen - Sidac
  2760. K1V24W Shindengen - Sidac
  2761. K1V26 Shindengen - Sidac
  2762. K1V26W Shindengen - Sidac
  2763. K1V33 Shindengen - Sidac
  2764. K1V33W Shindengen - Sidac
  2765. K1V34 Shindengen - Sidac
  2766. K1V34W Shindengen - Sidac
  2767. K1V36 Shindengen - Sidac
  2768. K1V36W Shindengen - Sidac
  2769. K1V38 Shindengen - Sidac
  2770. K1V38W Shindengen - Sidac
  2771. K1V5 Shindengen - Sidac
  2772. K1V6 Shindengen - Sidac
  2773. K1V8 Shindengen - Sidac
  2774. K1VA10 Shindengen - Sidac
  2775. K1VA11 Shindengen - Sidac
  2776. K1VA12 Shindengen - Sidac
  2777. K1VA14 Shindengen - Sidac
  2778. K1VA16 Shindengen - Sidac
  2779. K2564 Shindengen - VX-2 Series Power MOSFET(600V 8A)
  2780. K179 Siemens - Silicon Piezoresistive Absolute Pressure Sensor
  2781. K164 Siemens - Temperaturmessung Bedrahtete Scheiben
  2782. k246 Siemens - Silicon Spreading Resistance Temperature Sensor In Miniature Leaded Plastic Package
  2783. K14N04FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  2784. K10N06FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  2785. K10N07FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  2786. K1100E70 Teccor - Thyristor Product Catalog
  2787. K1100E70 Teccor - silicon bilateral voltage triggered switch
  2788. K1100G Teccor - Thyristor Product Catalog
  2789. K1100G Teccor - silicon bilateral voltage triggered switch
  2790. K1100S Teccor - Thyristor Product Catalog
  2791. K1100S Teccor - silicon bilateral voltage triggered switch
  2792. K1200E70 Teccor - Thyristor Product Catalog
  2793. K1200E70 Teccor - silicon bilateral voltage triggered switch
  2794. K1200G Teccor - Thyristor Product Catalog
  2795. K1200G Teccor - silicon bilateral voltage triggered switch
  2796. K1200S Teccor - Thyristor Product Catalog
  2797. K1200S Teccor - silicon bilateral voltage triggered switch
  2798. K1500E70 Teccor - Thyristor Product Catalog
  2799. K1500E70 Teccor - silicon bilateral voltage triggered switch
  2800. K1500G Teccor - Thyristor Product Catalog
  2801. K1500G Teccor - silicon bilateral voltage triggered switch
  2802. K1500S Teccor - Thyristor Product Catalog
  2803. K1500S Teccor - silicon bilateral voltage triggered switch
  2804. K1400E70 Teccor - Thyristor Product Catalog
  2805. K1400E70 Teccor - silicon bilateral voltage triggered switch
  2806. K1400G Teccor - Thyristor Product Catalog
  2807. K1400G Teccor - silicon bilateral voltage triggered switch
  2808. K1400S Teccor - Thyristor Product Catalog
  2809. K1400S Teccor - silicon bilateral voltage triggered switch
  2810. K1300E70 Teccor - Thyristor Product Catalog
  2811. K1300E70 Teccor - silicon bilateral voltage triggered switch
  2812. K1300G Teccor - Thyristor Product Catalog
  2813. K1300G Teccor - silicon bilateral voltage triggered switch
  2814. K1300S Teccor - Thyristor Product Catalog
  2815. K1300S Teccor - silicon bilateral voltage triggered switch
  2816. K1050E70 Teccor - Thyristor Product Catalog
  2817. K1050E70 Teccor - Silicon Bilateral Voltage Triggered Switch
  2818. K1050F70 Teccor - Thyristor Product Catalog
  2819. K1050G Teccor - Thyristor Product Catalog
  2820. K1050G Teccor - silicon bilateral voltage triggered switch
  2821. K1050G70 Teccor - Thyristor Product Catalog
  2822. K1050S Teccor - Thyristor Product Catalog
  2823. K1050S Teccor - silicon bilateral voltage triggered switch
  2824. K1050S70 Teccor - Thyristor Product Catalog
  2825. K0900E70 Teccor - Thyristor Product Catalog
  2826. K0900G Teccor - Thyristor Product Catalog
  2827. K0900S Teccor - Thyristor Product Catalog
  2828. K2000E70 Teccor - Thyristor Product Catalog
  2829. K2000E70 Teccor - silicon bilateral voltage triggered switch
  2830. K2000F1 Teccor - Thyristor Product Catalog
  2831. K2000F1 Teccor - silicon bilateral voltage triggered switch
  2832. K2000G Teccor - Thyristor Product Catalog
  2833. K2000G Teccor - silicon bilateral voltage triggered switch
  2834. K2000S Teccor - Thyristor Product Catalog
  2835. K2000S Teccor - silicon bilateral voltage triggered switch
  2836. K2200E70 Teccor - Thyristor Product Catalog
  2837. K2200E70 Teccor - silicon bilateral voltage triggered switch
  2838. K2200F1 Teccor - Thyristor Product Catalog
  2839. K2200F1 Teccor - silicon bilateral voltage triggered switch
  2840. K2200G Teccor - Thyristor Product Catalog
  2841. K2200G Teccor - silicon bilateral voltage triggered switch
  2842. K2200S Teccor - Thyristor Product Catalog
  2843. K2200S Teccor - silicon bilateral voltage triggered switch
  2844. K2500E70 Teccor - Thyristor Product Catalog
  2845. K2500E70 Teccor - silicon bilateral voltage triggered switch
  2846. K2500F1 Teccor - Thyristor Product Catalog
  2847. K2500F1 Teccor - silicon bilateral voltage triggered switch
  2848. K2500G Teccor - Thyristor Product Catalog
  2849. K2500G Teccor - silicon bilateral voltage triggered switch
  2850. K2500S Teccor - Thyristor Product Catalog
  2851. K2500S Teccor - silicon bilateral voltage triggered switch
  2852. K2400E70 Teccor - Thyristor Product Catalog
  2853. K2400E70 Teccor - silicon bilateral voltage triggered switch
  2854. K2400F1 Teccor - Thyristor Product Catalog
  2855. K2400F1 Teccor - silicon bilateral voltage triggered switch
  2856. K2400G Teccor - Thyristor Product Catalog
  2857. K2400G Teccor - silicon bilateral voltage triggered switch
  2858. K2400S Teccor - Thyristor Product Catalog
  2859. K2400S Teccor - silicon bilateral voltage triggered switch
  2860. K2401F1 Teccor - silicon bilateral voltage triggered switch
  2861. K3000F1 Teccor - Thyristor Product Catalog
  2862. K3000F1 Teccor - silicon bilateral voltage triggered switch
  2863. K3010 Vishay - Optocoupler With Phototriac Output
  2864. K3010P Vishay - Optocoupler with Phototriac Output
  2865. K3010PG Vishay - Optocoupler with Phototriac Output
  2866. K3011 Vishay - Optocoupler with Phototriac Output
  2867. K3011P Vishay - Optocoupler with Phototriac Output
  2868. K3011PG Vishay - Optocoupler with Phototriac Output
  2869. K3012 Vishay - Optocoupler with Phototriac Output
  2870. K3012P Vishay - Optocoupler with Phototriac Output
  2871. K3012PG Vishay - Optocoupler with Phototriac Output
  2872. K3020P Vishay - Optocoupler With Phototriac Output
  2873. K3020PG Vishay - Optocoupler with Phototriac Output
  2874. K3021P Vishay - Optocoupler with Phototriac Output
  2875. K3021PG Vishay - Optocoupler with Phototriac Output
  2876. K3022P Vishay - Optocoupler with Phototriac Output
  2877. K3022PG Vishay - Optocoupler with Phototriac Output
  2878. K3023P Vishay - Optocoupler with Phototriac Output
  2879. K3023PG Vishay - Optocoupler with Phototriac Output
  2880. K170 TOKO - Low Voltage Operational Amplifier
  2881. K15462L TOKO - For Dsc, DVC and Portable Video Equipment, Composite Signal, Built-in LPF
  2882. K11044 TOKO - Temperature Sensor Ic
  2883. K11044-44C TOKO - TEMPERATURE SENSOR IC
  2884. K11044TL TOKO - TEMPERATURE SENSOR IC
  2885. K170 Toshiba - FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
  2886. k246 Toshiba - N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER and DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
  2887. K2750 Toshiba - N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER and MOTOR DRIVE APPLICATIONS)
  2888. K2717 Toshiba - N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER and MOTOR DRIVE APPLICATIONS)
  2889. К159НТ1А RD Alfa - Дифференциальная пара транзисторов
  2890. К159НТ1Б RD Alfa - Дифференциальная пара транзисторов
  2891. К159НТ1Д RD Alfa - Дифференциальная пара транзисторов
  2892. К159НТ1Е RD Alfa - Дифференциальная пара транзисторов
  2893. К159НТ1Г RD Alfa - Дифференциальная пара транзисторов
  2894. К159НТ1В RD Alfa - Дифференциальная пара транзисторов
  2895. К154УД1А RD Alfa - Микромощный операционный усилитель
  2896. К154УД1Б RD Alfa - Микромощный операционный усилитель
  2897. К154УД3А RD Alfa - Быстродействующий операционный усилитель
  2898. К154УД3Б RD Alfa - Быстродействующий операционный усилитель
  2899. К154УД4А RD Alfa - Сверхбыстрый операционный усилитель
  2900. К154УД4Б RD Alfa - Сверхбыстрый операционный усилитель
  2901. К1475УД1Р RD Alfa - Быстрый широкополосный операционный усилитель
  2902. К1475УД1С RD Alfa - Быстрый широкополосный операционный усилитель
  2903. К1475УД3АТ RD Alfa - Четырехканальный операционный усилитель
  2904. К1475УД3БТ1 RD Alfa - Четырехканальный операционный усилитель
  2905. К1475УД4АТ RD Alfa - Четырехканальный операционный усилитель
  2906. К1475УД4БТ1 RD Alfa - Четырехканальный операционный усилитель
  2907. К129НТ1А-1 RD Alfa - Дифференциальная пара транзисторов
  2908. К129НТ1Б-1 RD Alfa - Дифференциальная пара транзисторов
  2909. К129НТ1Д-1 RD Alfa - Дифференциальная пара транзисторов
  2910. К129НТ1Е-1 RD Alfa - Дифференциальная пара транзисторов
  2911. К129НТ1Г-1 RD Alfa - Дифференциальная пара транзисторов
  2912. К129НТ1И-1 RD Alfa - Дифференциальная пара транзисторов
  2913. К129НТ1В-1 RD Alfa - Дифференциальная пара транзисторов
  2914. К129НТ1Ж-1 RD Alfa - Дифференциальная пара транзисторов
  2915. K-13204G Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  2916. K-13204GX Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  2917. K-12001G Para Light - LCD Back Light, Cob Type, LCD Character 40x4
  2918. K-12001GX Para Light - LCD Back Light, Cob Type, LCD Character 40x4
  2919. K-10004G Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  2920. K-10004GX Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  2921. K-05205GX-P Para Light - LCD Back Light, Cob Type, LCD Character 16x4
  2922. K-05401G Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  2923. K-05401GX Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  2924. K-05401GX-P Para Light - LCD Back Light, Cob Type, LCD Character 40x2
  2925. K-05601G Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  2926. K-05601GX Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  2927. K-05601GX-P Para Light - LCD Back Light, Cob Type, LCD Character 20x4
  2928. K-05606G Para Light - LCD Back Light, Cob Type, LCD Character 16x2(L)
  2929. K-05606GX Para Light - LCD Back Light, Cob Type, LCD Character 16x2(L)
  2930. K-06601G Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  2931. K-06601GX Para Light - LCD Back Light, Cob Type, LCD Character 128x64
  2932. K-07205G Para Light - LCD Back Light, Cob Type, LCD Character 20x2(L)
  2933. K-03203G Para Light - LCD Back Light, Cob Type, LCD Character 16x1(L)
  2934. K-04204G Para Light - LCD Back Light, Cob Type, LCD Character 20x2
  2935. K-05205G Para Light - LCD Back Light, Cob Type, LCD Character 16x4
  2936. K-04211G Para Light - LCD Back Light, Cob Type, LCD Character 20x2
  2937. K-02416G Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  2938. K-02416GX Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  2939. K-02425G Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  2940. K-02425GX-P3 Para Light - LCD Back Light, Cob Type, LCD Character 16x2
  2941. K-02615G Para Light - LCD Back Light, Cob Type, LCD Character 16x1
  2942. K-02615GX-P3 Para Light - LCD Back Light, Cob Type, LCD Character 16x1
  2943. K-01401G Para Light - LCD Back Light, Cob Type, LCD Character 8x2
  2944. K-01401GX Para Light - LCD Back Light, Cob Type, LCD Character 8x2
  2945. K-18001G-P Para Light - LCD Back Light, Cob Type, LCD Character 240x128
  2946. K-18004SRDG-P Para Light - LCD Back Light, Cob Type, LCD Character 240x128
  2947. K3390S1724 Carlo Gavazzi - Accessories
  2948. K100F Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 200, Package = Axial-leaded,epoxy, Terminati...
  2949. K100S Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 3000, Package = Axial-leaded,epoxy, Terminat...
  2950. K100UF Voltage Multipliers - VRWM = 10KV, Io(A) = 1.5, Trr(nS) = 100, Package = Axial-leaded,epoxy, Terminati...
  2951. K25UF Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 100, Package = Axial-leaded,epoxy, Terminat...
  2952. K25F Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 200, Package = Axial-leaded,epoxy, Terminat...
  2953. K25S Voltage Multipliers - VRWM = 2.5KV, Io(A) = 3.0, Trr(nS) = 3000, Package = Axial-leaded,epoxy, Termina...
  2954. K1100BA MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic...
  2955. K1110D MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  2956. K1120D MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  2957. K1144B MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.750 to 35.000 MHZ, Output Logic...
  2958. K1149 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 40.000 to 160.000 MHZ, Output Logi...
  2959. K1149CQA MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 139.264, 155.520 MHZ, Output Logic...
  2960. K1149DAD MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 77.760 MHZ, Output Logic = Pecl,...
  2961. K11041 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = up to 140.000 MHZ, Output Logic =...
  2962. K1100F MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.500 to 100.000 MHZ, Output Logic...
  2963. K1300 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 70.000 to 120.000 MHZ, Output Logi...
  2964. K1523BA MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 35.000 MHZ, Output Logic = CM...
  2965. K1524A MtronPTI - Package Description = 14 Pin Dip, Frequency = 3.000 to 35.000 MHZ, Output Logic = CM...
  2966. K1525C MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 55.000 MHZ, Output Logic = CM...
  2967. K1526A MtronPTI - Package Description = 9 X 14 MM J-lead, Frequency = 2.000 to 40.000 MHZ, Output Logi...
  2968. K1526B MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2969. K1526BLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2970. K1526C MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2971. K1526CLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2972. K1526D MtronPTI - Package Description = 9 X 14 MM J-lead, Frequency = 2.000 to 160.000 MHZ, Output Log...
  2973. K1527A MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 51.840 MHZ, Output Logic = CM...
  2974. K1528D MtronPTI - Package Description = 14 Pin Dip, Frequency = 35.000 to 105.000 MHZ, Output Logic =...
  2975. K1536B MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2976. K1536BLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2977. K1700A MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 35.000 MHZ, Output Logic...
  2978. K17255B MtronPTI - Package Description = 14 Pin Dip, Frequency = 155.520 MHZ, Output Logic = 10KH Pecl...
  2979. K1601 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 16.000 to 30.000 MHZ, Output Logic...
  2980. K1601T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2981. K1601TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2982. K1602 MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 16.000 to 30.000 MHZ, Output Logic...
  2983. K1602SE MtronPTI - Package Description = 14 Pin Dip, Frequency = 90.000 to 115.000 MHZ, Output Logic =...
  2984. K1602T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2985. K1602TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2986. K1603T MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2987. K1400A MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = up to 140.000 MHZ, Output Logic =...
  2988. K1603TE MtronPTI - Package Description = 14 Pin Dip, Frequency = 2.000 to 30.000 MHZ, Output Logic = CM...
  2989. K1610 MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 27.000 MHZ, Output Logic = Cl...
  2990. K1610T MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 2.000 to 30.000 MHZ, Output Logic...
  2991. K1613 MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 25.000 MHZ, Output Logic = Cl...
  2992. K1536C MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2993. K1536CLC MtronPTI - Package Description = 9 X 11 MM J-lead, Frequency = 2.000 to 80.000 MHZ, Output Logi...
  2994. K1570A MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  2995. K1570AQA MtronPTI - Package Description = 14 Pin Gull Wing, Frequency = 1.000 to 52.000 MHZ, Output Logi...
  2996. K1570AQG MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  2997. K1570AQH MtronPTI - Package Description = 14 Pin Dip, Frequency = 25.000 to 52.000 MHZ, Output Logic = C...
  2998. K1573A MtronPTI - Package Description = 14 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CM...
  2999. K3500G MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic =...
  3000. K3100G MtronPTI - Package Description = 14 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic...