K1B3216B7D Samsung - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance feature.
K1B3216BDD Samsung - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B5616BAM Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B5616BAM-I Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B5616BBM Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B5616BBM-I Samsung - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B6416B6C Samsung - 4mx16 Bit Synchronous Burst Uni-transistor Random Access Memory
K1B6416B6C-I Samsung - 4M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1S161611A Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
K1S161611A-I Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
K1S16161CA Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
K1S16161CA-I Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
K1S1616B1A Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616B1A-BI70 Samsung - 1mx16 Bit Uni-transistor Random Access Memory
K1S1616B1A-BI85 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616B1A-FI70 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616B1A-FI85 Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616B1A-I Samsung - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616BCA Samsung - 1mx16 Bit Page Mode Uni-transistor Random Access Memory
K1S1616BCA-I Samsung - 1Mx16 bit Page Mode Uni-Transistor Random Access MemoryThe K1S1616BCA is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S2816BCM Samsung - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
K1S2816BCM-I Samsung - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
K1S321611C Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
K1S321611C-FI70 Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
K1S321611C-I Samsung - 2mx16 Bit Uni-transistor Random Access Memory
K1S321615M Samsung - 2mx16 Bit Uni-transistor Random Access Memory
K1S321615M-E Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
K1S3216B1C Samsung - 2Mx16 bit Uni-Transistor Random Access Memory
K1S3216B1C-I Samsung - 2mx16 Bit Uni-transistor Random Access Memory
K1S3216BCC Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S3216BCC-FI70 Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S3216BCC-FI85 Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S3216BCD Samsung - 2mx16 Bit Page Mode Uni-transistor Random Access Memory
K1S3216BCD-I Samsung - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCD is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S64161CC Samsung - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
K1S64161CC-I Samsung - 4M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S64161CC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
K1S6416BCC Samsung - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
K1S6416BCC-I Samsung - 4Mx16 bit Page Mode Uni-Transistor Random Access Memory
K4D263238A Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A-GC Samsung - K4D263238A 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 3.3,3.6,4.0,4.5,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Eol(last Time Buy:Aug.\'03) ; Comments = -
K4D263238A-GC33 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A-GC36 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
K4D263238A-GC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A-GC45 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A-GC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238D Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238D-QC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238D-QC50 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC Samsung - K4D263238E-GC 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.8/2.8,2.375~2.94 ; Speed(ns) = 2.5,2A,3.3,3.6,4.0,4.5 ; Refresh = 4K/32ms ; Package = 144FBGA ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
K4D263238E-GC25 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC2A Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC33 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC36 Samsung - 1m X 32bit X 4 Banks Graphic Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
K4D263238E-GC40 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC45 Samsung - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F-QC40 Samsung - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F-QC50 Samsung - 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe and Dll
K4D553238E Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
K4D553238E-JC Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
K4D553238E-JC33 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
K4D553238E-JC36 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
K4D553238E-JC40 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
K4D553238E-JC50 Samsung - K4D553238E 2M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5(2.2~2.625 For 300MHz) ; Speed(ns) = 3.3,3.6,4.0,5.0 ; Refresh = 4K/32ms ; Package = 144FBGA(MCP) ; Interface = SSTL_2 ; Production Status = Mass Production ; Comments = -
K4E171611D-J Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4E171611D-T Samsung - K4E171611D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ400,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4E170411D-F Samsung - K4E170411D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4E170412C Samsung - K4E170412C 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E170811C Samsung - K4E170811C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2-300 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E170811D-B Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E170811D-F Samsung - K4E170811D 2M X 8 Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E170812C Samsung - K4E170812C 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E170412D-B Samsung - K4E170412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4E170412D-F Samsung - K4E170412D 4M X 4Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4E170812D-B Samsung - K4E170812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E170812D-F Samsung - K4E170812D 2M X 8Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 2Mx8 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E171611C Samsung - K4E171611C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E171612C Samsung - K4E171612C 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E171612D-J Samsung - K4E171612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4E171612D-T Samsung - K4E171612D 1M X 16Bit CMOS Dynamic RAM With Extended Data Out ; Organization = 1Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4E640411B Samsung - K4E660411B 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E640411C Samsung - K4E640411C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E640411D Samsung - K4E640411D 16MB X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4E640412B Samsung - M374F3200BJ1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*36+EEPROM ; Production Status = Eol ; Comments = Unbuffered
K4E640412C Samsung - K4E660412C 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4E640811D Samsung - K4E640811D 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4E640812D Samsung - M374F0803DJ1 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 64 ; Organization = 8Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (8Mx8)*9+EEPROM ; Production Status = Eol ; Comments = Unbuffered
K4E640812D-J Samsung - M374F0803DJ3 8Mx72 DRAM Dimm With Ecc Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode ; Density(MB) = 64 ; Organization = 8Mx72 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (8Mx8)*9+EEPROM ; Production Status = Eol ; Comments = Unbuffered
K4E641611B Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E641611B-45 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E641611B-50 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E641611B-60 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E641611C Samsung - K4E641611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E641611D Samsung - K4E641611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4E641612D-T Samsung - M366F0804DT1 8Mx64 DRAM Dimm Using 4Mx16,8K&4K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Edo ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)*8+EEPROM ; Production Status = Eol ; Comments = Unbuffered
K4E641612E Samsung - K4E641612E 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
K4E6601611B Samsung - M364E0884BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x8+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E660411B Samsung - M372E3280BJ0 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E660411C Samsung - K4E660411C 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E660412B Samsung - K4E660412B 16Mx4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E660412C Samsung - M366F1680CJ2 16Mx64 DRAM Dimm Using 16Mx4,4K&8K Refresh,3.3V,EDO Mode Without Buffer ; Density(MB) = 128 ; Organization = 16Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)*16+EEPROM ; Production Status = Eol ; Comments = Unbuffered
K4E660412C-J Samsung - M372F3280CJ4 32M X 72 DRAM Dimm With Ecc Using 16Mx4, 4K & 8K Refresh, 3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E660412C-T Samsung - M372F3280CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E660412D-J Samsung - M372F3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E660412D-JC/L Samsung - M372F3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E660412D-T Samsung - M372F3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E660412D-TC/L Samsung - M372F3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E660412E-T Samsung - M372F3280ET1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Edo ; Refresh = 8K ; Speed(ns) = C50,C60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+EEPROM ; Production Status = Eol ; Comments = -
K4E660811B Samsung - K4E660811B 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E660811C Samsung - K4E660811C 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ-400A,32TSOP2-400B ; Power = Normal ; Production Status = Eol ; Comments = -
K4E660811D Samsung - K4E660811D 8Mx8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4E661611B Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E661611B-45 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E661611B-50 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E661611B-60 Samsung - M364E0484BT0 Edo Mode:4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x4+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4E661611C Samsung - K4E661611C 4Mx16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4E661611D Samsung - K4E661611D 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4E661612D-T Samsung - M366F0484DT1 4MBx64 DRAM Dimm Using 4MBx16,4KB&8KB Refresh 3.3V,EDO Mode Without Buffer ; Density(MB) = 32 ; Organization = 4Mx64 ; Mode = Edo ; Refresh = 8K/64ms ; Speed(ns) = 50, 60 ; #of Pin = 168 ; Component Composition = (4Mx16)*4+EEPROM ; Production Status = Eol ; Comments = Unbuffered
K4E661612E Samsung - K4E661612E 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Edo ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
K4F151611C Samsung - K4F171611C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F171611C Samsung - K4F171611C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F151611D-50 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F151611D-60 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F151611D-J Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F151611D-T Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F171611D-50 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F171611D-60 Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F171611D-J Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F171611D-T Samsung - K4F171611D 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F151612C Samsung - K4F151612C 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F151612D-50 Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F151612D-60 Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F151612D-J Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F151612D-T Samsung - K4F151612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 1K/16ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F160411D-B Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F160411D-F Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F170411D-B Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F170411D-F Samsung - K4F170411D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = TTL
K4F160412D-B Samsung - K4F160412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F160412D-F Samsung - K4F160412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F160811C Samsung - K4F170811C 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F170811C Samsung - K4F170811C 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F160811D-B Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F160811D-F Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F170811D-B Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F170811D-F Samsung - K4F170811D 2M X 8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F160812C Samsung - K4F170812C 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F170812C Samsung - K4F170812C 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F160812D-B Samsung - K4F160812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F160812D-F Samsung - K4F160812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F170111C Samsung - K4F170111C 16Mx1Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx1 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F170112C Samsung - K4F170112C 16Mx1Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx1 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F170412D-B Samsung - K4F170412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F170412D-F Samsung - K4F170412D 4M X 4Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F170812D-B Samsung - K4F170812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F170812D-F Samsung - K4F170812D 2Mx8Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 2Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/32ms ; Speed(ns) = 50,60 ; Package = 28SOJ,28TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F171612C Samsung - K4F171612C 1Mx16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F171612D-50 Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F171612D-60 Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F171612D-J Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F171612D-T Samsung - K4F171612D 1M X 16Bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 1Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 42SOJ,50TSOP2,44TSOP2 ; Power = Normal,low ; Production Status = Eol(ltb Order:Aug.\'03) ; Comments = LVTTL
K4F640411B Samsung - K4F640411B 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4F640411C Samsung - K4F640411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4F640411D Samsung - K4F640411D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4F640412B Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F640412C Samsung - K4F640412C 16M X4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F640412D-JC/L Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
K4F640412D-TC/L Samsung - K4F640412D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
K4F640412E Samsung - K4F640412E 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
K4F640812B Samsung - K4F640812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F640812C Samsung - K4F640812C 8M X8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50, 60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Until Aug. 2000
K4F640812D-JC/L Samsung - K4F640812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
K4F640812D-TC/L Samsung - K4F640812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
K4F641611B Samsung - K4F641611B 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4F641611C Samsung - K4F641611C 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4F641611D Samsung - K4F641611D 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4F641612B Samsung - K4F641612B 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F660411B Samsung - M372C3280BJ0 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F660411C Samsung - K4F660411C 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4F660411D Samsung - K4F660411D 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4F660412B Samsung - K4F660412B 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4F660412B-J Samsung - M372V3280CJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F660412C Samsung - K4F660412C 16M X 4bit CMOS Dynamic RAM With Extended Data Out ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = ,
K4F660412C-J Samsung - M372V3280CJ3 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F660412C-T Samsung - M372V3280CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F660412D-J Samsung - M372V3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F660412D-JC/L Samsung - M372V3280DJ4 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F660412D-T Samsung - M372V3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F660412D-TC/L Samsung - M372V3280DT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ; Density(MB) = 256 ; Organization = 32Mx72 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (16Mx4)x36+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F660412E Samsung - K4F660412E 16M X 4bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 16Mx4 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
K4F660811C Samsung - K4F660811C 8M X 8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4F660811D Samsung - K4F660811D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = SOJ,TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4F660812B Samsung - K4F660812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F660812C Samsung - K4F660812C 8M X8bit CMOS Dynamic RAM With Extended Data Out ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 32SOJ,32TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = -
K4F660812D-JC/L Samsung - K4F660812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
K4F660812D-TC/L Samsung - K4F660812D 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 8K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = LVTTL
K4F660812E Samsung - K4F660812E 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 8Mx8 ; Mode = Fast Page ; Voltage(V) = 3.3 ; Refresh = 4K/64ms ; Speed(ns) = 45,50,60 ; Package = SOJ,TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = Last Order BY Jul.\'02
K4F661611B Samsung - M364C0884BT0 Fast Page Mode:8Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,5V ; Density(MB) = 64 ; Organization = 8Mx64 ; Mode = Fast Page ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; #of Pin = 168 ; Component Composition = (4Mx16)x8+Drive ICx2 ; Production Status = Eol ; Comments = Buffered
K4F661611C Samsung - K4F661611C 4M X 16bit CMOS Dynamic RAM With Extended Data Out ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -
K4F661611D Samsung - K4F661611D 4M X 16bit CMOS Dynamic RAM With Fast Page Mode ; Organization = 4Mx16 ; Mode = Fast Page ; Voltage(V) = 5 ; Refresh = 8K/64ms ; Speed(ns) = 50,60 ; Package = TSOP2 ; Power = C ; Production Status = Eol ; Comments = TTL
K4G163222A Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-PC/L50 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-PC/L55 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-PC/L60 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-PC/L70 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-PC/L80 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-QC/L50 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-QC/L55 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-QC/L60 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-QC/L70 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G163222A-QC/L80 Samsung - K4G163222A 256K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 512Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 50,55,60,70,80 ; Package = 100TQFP,100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222A-PC/L45 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-PC/L50 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-PC/L60 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-PC/L70 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-PC/L7C Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-QC/L45 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-QC/L50 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-QC/L60 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-QC/L70 Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222A-QC/L7C Samsung - K4G323222A 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3/3.3 ; Speed(ns) = 4.5,5.0,7C,6.0,7.0 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = -
K4G323222M Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-PC/L45 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-PC/L50 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-PC/L55 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-PC/L60 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-PC/L70 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-PC/L7C Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-PC/L80 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-QC/L45 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-QC/L50 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-QC/L55 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-QC/L60 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-QC/L70 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-QC/L7C Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G323222M-QC/L80 Samsung - K4G323222M 512K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 1Mx32 ; Voltage(V) = 3.3 ; Speed(ns) = 45,50,55,7C,60,70,80 ; Package = 100PQFP,100TQFP ; Production Status = Eol ; Comments = LVTTL
K4G813222B Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G813222B-PC10 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G813222B-PC70 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G813222B-PC80 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G813222B-QC10 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G813222B-QC70 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
K4G813222B-QC80 Samsung - K4G813222B 128K X 32Bit X 2 Banks Synchronous Graphic RAM ; Organization = 256Kx32 ; Voltage(V) = 3.3 ; Speed(ns) = 70,80,10 ; Package = 100PQFP ; Production Status = Eol ; Comments = LVTTL
K4H1G0438A Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H1G0438A-UC/LCC,B3,A2,B0 Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H1G0838A-UC/LCC,B3,A2,B0 Samsung - 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H1G0438M-TC(L)/B3,A2,B0 Samsung - st. 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
K4H1G0838M-UC(L)/B3,A2,B0 Samsung - st. 64M x 4Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0438M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
K4H1G0638B-T(U)C/LA2 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
K4H1G0638B-T(U)C/LB0 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
K4H1G0738B-T(U)C/LA2 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
K4H1G0738B-T(U)C/LB0 Samsung - DDR SDRAM stacked 1Gb B-die (x4/x8)The K4H1G0638B is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
K4H1G0638C-UC/LA2,B0 Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0638C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
K4H1G0738C-UC/LA2,B0 Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0638C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
K4H1G0738C Samsung - DDR SDRAM stacked 1Gb C-die (x4/x8)The K4H1G0738C is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 / 4 x 8,388,608 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 266Mb/s per pin.
K4H1G0838A Samsung - 32M x 8Bit x 4 Banks Double Data Rate SDRAMhe K4H1G0838A is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H1G0838M Samsung - 32M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H1G0838M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4 x 67,108,864 / 4 x 33,554,432 words by 4 / 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin.
K4H280838E Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
K4H280838E-TC/LA2 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
K4H280838E-TC/LAA Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
K4H280838E-TC/LB0 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
K4H280838E-TC/LB3 Samsung - K4H280838E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 16Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
K4H280838F Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
K4H280838F-TC/LB3 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
K4H280838F-UC/LA2 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
K4H280838F-UC/LB0 Samsung - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
K4H281638E Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
K4H281638E-TC/LA2 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
K4H281638E-TC/LB0 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
K4H281638E-TC/LB3 Samsung - K4H281638E DDR Sdram 128Mb E-die (x8, X16) ; Organization = 8Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 4K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = DDR200/266/333/400, to be Eol in \'04 1H
K4H2G0638A Samsung - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H2G0638A-UC/LCC Samsung - DDR SDRAM stacked 2Gb A-die (x4)The K4H2G0638A is 2,147,483,648 bits of double data rate synchronous DRAM organized as 4x134,217,728 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510438B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510438B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510438C Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510438C-UC(L)/B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510438C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 33,554,432 words by 4bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510438M Samsung - K4H510438M 512Mb DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4H510638B Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638B-TCA0 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638B-TCA2 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638B-TCB0 Samsung - K4H510638B Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638C Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638C-TCA0 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638C-TCA2 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638C-TCB0 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638C-TCB3 Samsung - K4H510638C Stacked 512Mb (x4) DDR Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638D Samsung - K4H510638D The Data Sheet You Have Searched is Under Preparation. ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = B3,A2,B0,A0 ; Package = 66TSOP2 ; Power = C ; Production Status = Mass Production ; Comments = Stacked
K4H510638E Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638E-TC/LA2 Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638E-TC/LAA Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510638E-TC/LB0 Samsung - K4H510638E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.128Mx4 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510738E-TC/LA2 Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510738E-TC/LAA Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510738E-TC/LB0 Samsung - K4H510738E DDR Sdram Stacked 512Mb E-die (x4/x8) ; Organization = St.64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = AA,A2,B0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
K4H510838B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510838C-UC(L)/CC,B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H510838C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510838D Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510838D-UC/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H510838M Samsung - K4H510838M 512Mb DDR Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
K4H511638B-G(Z)C/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb B-die (x4, x8, x16)The K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H511638C Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H511638C-UC(L)/CC,B3,A2,B0 Samsung - DDR SDRAM 512Mb C-die (x4, x8, x16)The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
K4H511638D-UC/LCC,B3,A2,B0 Samsung - DDR SDRAM 512Mb D-die (x8, x16)The K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG\'s high performance CMOS technology.Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin.
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