SST34HF3242C - 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemoryThe SST34HF32x2xC/32x4x ComboMemory devices integrate eitherA 2M x16 or 4M x8 CMOS flash memory bank with eitherA 256K x16 or 512K x16 CMOS SRAM or pseudo SRAM (PSRAM) memory bank inA multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with
SST34HF3244C - 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemoryThe SST34HF32x2xC/32x4x ComboMemory devices integrate eitherA 2M x16 or 4M x8 CMOS flash memory bank with eitherA 256K x16 or 512K x16 CMOS SRAM or pseudo SRAM (PSRAM) memory bank inA multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with
SST34HF3282 - 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemoryThe SST34HF32x2xC/32x4x ComboMemory devices integrate eitherA 2M x16 or 4M x8 CMOS flash memory bank with eitherA 256K x16 or 512K x16 CMOS SRAM or pseudo SRAM (PSRAM) memory bank inA multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with
SST34HF3284 - 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemoryThe SST34HF32x2xC/32x4x ComboMemory devices integrate eitherA 2M x16 or 4M x8 CMOS flash memory bank with eitherA 256K x16 or 512K x16 CMOS SRAM or pseudo SRAM (PSRAM) memory bank inA multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with
SST36VF1601-90-4C-B3K - Voltage = 2.7 to 3.6 ; Density = 16Mb ; Organization = 1Mb X 16 ; Speed = 90 NS ; Temp. = Commercial ; Package = Tfbga/tbga
SST36VF1601-90-4C-EK - Voltage = 2.7 to 3.6 ; Density = ; Organization = ; Speed = 90 NS ; Temp. = Commercial ; Package = PLCC
SST36VF1601-90-4E-B3K - Voltage = 2.7 to 3.6 ; Density = 16Mb ; Organization = 1Mb X 16 ; Speed = 90 NS ; Temp. = Extended ; Package = Tfbga/tbga
SST36VF1601-90-4E-EK - Voltage = 2.7 to 3.6 ; Density = ; Organization = ; Speed = 90 NS ; Temp. = Extended ; Package = PLCC
SST36VF1601E - 16 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high perfor
SST36VF1602E - 16 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high perfor
SST36VF3203 - 32 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF320x are 2M x16 or 4M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high performance Word-Program, these
SST36VF3204 - 32 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF320x are 2M x16 or 4M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high performance Word-Program, these
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