BS62LV2565DC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565DI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565JC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565JI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565PC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565PI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565SC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565SI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565TC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV2565TI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256DC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256DI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256JC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256JI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256PC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256PCP55 BSI - The BS62LV256 isA high performance, very low power CMOS StaticRandom Access Memory organized as 32,768 by 8 bits andoperates formA wide range of 2.4V to 5.5V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical CMOS standbycurrent of 0.01uA and maximum access time of 70ns in 3.0Voperation
BS62LV256PCP70 BSI - The BS62LV256 isA high performance, very low power CMOS StaticRandom Access Memory organized as 32,768 by 8 bits andoperates formA wide range of 2.4V to 5.5V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical CMOS standbycurrent of 0.01uA and maximum access time of 70ns in 3.0Voperation
BS62LV256PI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256SC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256SCP55 BSI - The BS62LV256 isA high performance, very low power CMOS StaticRandom Access Memory organized as 32,768 by 8 bits andoperates formA wide range of 2.4V to 5.5V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical CMOS standbycurrent of 0.01uA and maximum access time of 70ns in 3.0Voperation
BS62LV256SCP70 BSI - The BS62LV256 isA high performance, very low power CMOS StaticRandom Access Memory organized as 32,768 by 8 bits andoperates formA wide range of 2.4V to 5.5V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical CMOS standbycurrent of 0.01uA and maximum access time of 70ns in 3.0Voperation
BS62LV256SI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256TC BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV256TCP70 BSI - The BS62LV256 isA high performance, very low power CMOS StaticRandom Access Memory organized as 32,768 by 8 bits andoperates formA wide range of 2.4V to 5.5V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical CMOS standbycurrent of 0.01uA and maximum access time of 70ns in 3.0Voperation
BS62LV256TI BSI - Very Low Power/Voltage CMOS SRAM 32K X 8 bit
BS62LV4000 BSI - Very Low Power/voltage Cmos Sram 512k X 8 Bit
BSM25GAL120DN2 Siemens - IGBT Power Module (single Switch With Chopper Diode Including Fast Free-wheeling Diodes Package With Insulated Metal Base Plate)
BSM25GB120DN2 Siemens - IGBT Power Module (half-bridge Including Fast Free-wheeling Diodes Package With Insulated Metal Base Plate)
BSM50GAL120DN2 Siemens - IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)
BSM50GD120DN2 Siemens - IGBT Power Module (power Module 3-phase Full-bridge Including Fast Free-wheel Diodes)
BSM50GD120DN2E3226 Siemens - IGBT Power Module (power Module 3-phase Full-bridge Including Fast Free-wheel Diodes Package With Insulated Metal Base Plate)
BSM50GD120DN2G Siemens - IGBT Power Module (power Module 3-phase Full-bridge Including Fast Free-wheel Diodes)