BFR93AW Siemens - Npn Silicon Rf Transistor (for Low Distortion Broadband Amplifiers and Oscillators Up To 2ghz At Collector Currents From 5 Ma To 30 Ma)
BFY180 Siemens - Hirel Npn Silicon Rf Transistor (hirel Discrete and Microwave Semiconductor For Low Power Amplifiers At Collector Currents From 0.2 To 2.5 Ma)
BFY193 Siemens - Hirel Npn Silicon Rf Transistor (hirel Discrete and Microwave Semiconductor For Low Noise, High Gain Broadband Amplifiers Up To 2 Ghz.)
BG1101F Stanley - PKG Type = Right Angle ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 1.2 ; Luminous Intensity iv (mcd) TYP = 2.4 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 150
BG1101W Stanley - PKG Type = Standard Flat Lens (3216/1206) ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 0.7 ; Luminous Intensity iv (mcd) TYP = 2.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 150
BG1102W Stanley - PKG Type = Standard Inner Lens (3216/1206) ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 1.8 ; Luminous Intensity iv (mcd) TYP = 4.8 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 70
BG1104B Stanley - PKG Type = Bath Tub (PLCC-2) ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 5.0 ; Luminous Intensity iv (mcd) TYP = 10.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 120
BG1111C Stanley - PKG Type = Ultra Compact (1608/0603) ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 1.4 ; Luminous Intensity iv (mcd) TYP = 2.4 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 150
BG1111R Stanley - PKG Type = Reverse Mount (3216/1206) ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 1.6 ; Luminous Intensity iv (mcd) TYP = 2.7 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 150
BG1112H Stanley - PKG Type = Thin(2012/0805) ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 1.6 ; Luminous Intensity iv (mcd) TYP = 2.7 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 160
BG2202S Stanley - PKG Type = 1.6 ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 4.0 ; Luminous Intensity iv (mcd) TYP = 8.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 60
BG2222S Stanley - PKG Type = 1.6 ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 4.0 ; Luminous Intensity iv (mcd) TYP = 8.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 60
BG3365S Stanley - PKG Type = 3 ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 0.8 ; Luminous Intensity iv (mcd) TYP = 1.6 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 110
BG3822K Stanley - PKG Type = 2x3 ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 1.0 ; Luminous Intensity iv (mcd) TYP = 2.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 140
BG3889S Stanley - PKG Type = 3 ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 0.8 ; Luminous Intensity iv (mcd) TYP = 1.6 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 130
BG5262X Неопределенные - Single Color phi 5 Flush Mount Round Shape Type
BG5304S Stanley - PKG Type = 5 ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 25.0 ; Luminous Intensity iv (mcd) TYP = 50.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 20
BG5305S Stanley - PKG Type = 5 ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 6.0 ; Luminous Intensity iv (mcd) TYP = 12.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 35
BG5307S Stanley - PKG Type = 5 ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 2.0 ; Luminous Intensity iv (mcd) TYP = 4.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 100
BG5334S Stanley - PKG Type = 5 ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 5.0 ; Luminous Intensity iv (mcd) TYP = 10.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 30
BG5335S Stanley - PKG Type = 5 ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 4.0 ; Luminous Intensity iv (mcd) TYP = 8.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 45
BG5351K Stanley - PKG Type = 2x5 ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 0.5 ; Luminous Intensity iv (mcd) TYP = 1.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 140
BG5362X Stanley - PKG Type = 5 ; Emitted Color = Pure Green ; Lens Type = Clear ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 0.6 ; Luminous Intensity iv (mcd) TYP = 1.2 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 100
BG5385X Stanley - PKG Type = 5 ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 0.8 ; Luminous Intensity iv (mcd) TYP = 1.6 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 140
BG7351K Stanley - PKG Type = 2.4x7.2 ; Emitted Color = Pure Green ; Lens Type = Diffused ; Peak Wavelength λ P (nm) = 555 ; Luminous Intensity iv (mcd) Min = 0.5 ; Luminous Intensity iv (mcd) TYP = 1.0 ; Luminous Intensity iv (mcd) Max = 20 ; Viewing Angle (2 θ 1/2) = 150
BGA310 Siemens - Silicon Bipolar Mmic-amplifier (cascadable 50 W-gain Block 9 Db Typical Gain At 1.0 Ghz 9 Dbm Typical P-1db At 1.0 Ghz 3 Db-bandwidth: Dc To 2.4 Ghz)
BGA430 Infineon - A 35 Db Gain-sloped Lnb I.f. Amplifier For Direct Broadcast Satellite Television Applications Using The Bga430 & Bgb540 Silicon Mmics
BG-A511RD Неопределенные - DUAL DIGIT LED DISPLAYS
BG-A512RD Неопределенные - DUAL DIGIT LED DISPLAYS
BG-A513RD Неопределенные - DUAL DIGIT LED DISPLAYS
BG-A514RE Неопределенные - DUAL DIGIT LED DISPLAYS
BG-A515RD Неопределенные - DUAL DIGIT LED DISPLAYS
BG-A515RE Неопределенные - DUAL DIGIT LED DISPLAYS
BG-A516RD Неопределенные - DUAL DIGIT LED DISPLAYS
BG-A51DRD Неопределенные - DUAL DIGIT LED DISPLAYS
BGB540 Infineon - A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs
BGE788 Philips - 750 Mhz, 34 Db Gain Push-pull Amplifier
BGE788C Philips - 750 MHz, 34 dB gain push-pull amplifierHybrid high dynamic range amplifier module operating atA supply voltage of 24V (DC) inA SOT115J package. The module consists of two cascaded stages both in cascode configuration. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesExcellent linearity Extremely low noise High gain Excellent return loss properties ApplicationsSingle module line extender in CATV systems operating in
BGO807 American Bright LED - 870 MHZ Optical Receivershigh Dynamic Range Optical Receiver Amplifier Modules inA Standard SOT115 Package Where The Non-jacketed Fiber Has Either no Connector or Has an Fc/apc or Sc/apc Connector. The Amplifier Supply Voltage Pin and The Photo Diode Bias Voltage Pin Both Connect to 24V (DC). The Modules HaveA Mono Mode Optical Input Suitable For 1290 NM to 1600 NM Wavelengths,A Terminal to Monitor The Photo Diode Current and an Electrical Output HavingA Characteristic Impedance of 75 Ohm. CAUTIONThis
BH616UV1610AI-55 BSI - The BH616UV1610 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 16 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.0V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV1610AIG55 BSI - The BH616UV1610 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 16 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.0V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010 BSI - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010AI-55 BSI - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010AIG55 BSI - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010DI-55 BSI - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV4010TI-55 BSI - The BH616UV4010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 262,144 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010 BSI - Ultra Low Power/high Speed Cmos Sram 512k X 16 Bit
BH616UV8010AI BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010AI-55 BSI - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010AI-70 BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010AIG55 BSI - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010AIG70 BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010DI BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010DI-55 BSI - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010DI-70 BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010DIG70 BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010TC BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010TI BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010TI-55 BSI - The BH616UV8010 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 16 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH616UV8010TI-70 BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH616UV8010TIG70 BSI - Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
BH62UV1600 BSI - Ultra Low Power/high Speed Cmos Sram 2m X 8 Bit
BH62UV1600AI BSI - Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
BH62UV1600AI-55 BSI - The BH62UV1600 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 2,048K by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV1600AI-70 BSI - Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
BH62UV1600AIG55 BSI - The BH62UV1600 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 2,048K by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV1600AIG70 BSI - Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
BH62UV1600TI-55 BSI - The BH62UV1600 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 2,048K by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV1600TIG55 BSI - The BH62UV1600 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 2,048K by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV4000DI BSI - The BH62UV4000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV4000SI BSI - The BH62UV4000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV4000STI BSI - The BH62UV4000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV4000TI BSI - The BH62UV4000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 524,288 by 8 bits andoperates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV8000AI-55 BSI - The BH62UV8000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 8 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV8000AIG55 BSI - The BH62UV8000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 8 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV8000DI-55 BSI - The BH62UV8000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 8 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH62UV8000TIG55 BSI - The BH62UV8000 isA high performance, ultra low power CMOSStatic Random Access Memory organized as 1,048,576 by 8 bitsand operates inA wide range of 1.65V to 3.6V supply voltage.Advanced CMOS technology and circuit techniques provide bothhigh speed and low power features with typical operating current of1.5mA at 1MHz at 3.6V/25OC and maximum access time of 55ns at1.65V/85OC.
BH6410KN Rohm - Silicon Monolithic Integration Circuit Audio I/o Lsi For Digital Still Camera
BH6412KN Rohm - Monaural Audio Interface Lsi For Digital Still Camera
BL03RN2R1M1B Неопределенные - On-Board Type (DC) EMI Suppression Filters
BL03RN2R1N1A Неопределенные - On-Board Type (DC) EMI Suppression Filters
BL03RN2R1P1A Неопределенные - On-Board Type (DC) EMI Suppression Filters
BL03RN2R1Q1A Неопределенные - On-Board Type (DC) EMI Suppression Filters
BL0508-09-73 Kingbright - 22 MM X 22 MM Led Cluster. Super Bright Red (peak Wavelength 660 Nm), Super Bright Green (peak Wavelength 565 Nm). Lens Type Water Clear.
BL0709-18-76 Kingbright - 28 MM X 28 MM Led Cluster. Super Bright Red (peak Wavelength 660 Nm), Blue (peak Wavelength 430 Nm), Super Bright Green (peak Wavelength 565 Nm). Lens Type Water Clear.
BL-C5436 Yellow Stone - STANDARD LED LAMPS (CYLINDRICAL TYPES)
BLC6G10-200 Philips - UHF power LDMOS transistor200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
BLC6G20-110 Philips - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 25 W (AV) Gain =18 dB Efficiency = 32 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD pr
BLC6G20-140 Analog Devices - UHF power LDMOS transistor
BLC6G20-75 Philips - UHF power LDMOS transistor75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 550 mA: Output power = 29.5 W (AV) Gain =19 dB Efficiency = 38.5 pct ACPR400 = -62.5 dBc ACPR600 = -72 dBc EVMrms = 1.5 pct Easy power contr
BLC6G20LS-110 Philips - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 25 W (AV) Gain =18 dB Efficiency = 32 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD pr
BLC6G20LS-140 Analog Devices - UHF power LDMOS transistor
BLC6G20LS-75 Philips - UHF power LDMOS transistor75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 550 mA: Output power = 29.5 W (AV) Gain =19 dB Efficiency = 38.5 pct ACPR400 = -62.5 dBc ACPR600 = -72 dBc EVMrms = 1.5 pct Easy power contr
BLC6G22-100 Philips - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 25 W (AV) Gain =18 dB Efficiency = 32 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD pr
BLC6G22-130 Philips - UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 30 W (AV) Gain =16 dB Efficiency = 31 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD p
BLC6G22LS-100 Philips - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 25 W (AV) Gain =18 dB Efficiency = 32 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD pr
BLC6G22LS-130 Philips - UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 30 W (AV) Gain =16 dB Efficiency = 31 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD p
BLF348 Philips - Vhf Linear Push-pull Power Mos Transistor
BLF368 Philips - Vhf Push-pull Power Mos Transistor
BLF369 Philips - VHF power LDMOS transistorA 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band.
BLF378 Philips - Vhf Push-pull Power Mos Transistor
BLF4 Littelfuse - Axial Lead and Cartridge Fuses - Midget
BLF4G10-120 Philips - UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequency of 960 MHz,A supply voltage of 28V and an IDq of 850 mA: Load power = 48 W (AV) Gain = 19 dB (typ) Efficiency = 40 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -72 dBc (typ) EVMrms = 1.5 pct (typ) Easy powe
BLF4G10LS-120 Philips - UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 920 MHz and 960 MHz,A supply voltage of 28V and an IDq of 650 mA Load power = 48 W (AV) Gain = 19 dB (typ) Efficiency = 40 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -72 dBc (typ) EVMrms = 1.5 pct (t
BLF4G10S-120 Philips - UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequency of 960 MHz,A supply voltage of 28V and an IDq of 850 mA: Load power = 48 W (AV) Gain = 19 dB (typ) Efficiency = 40 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -72 dBc (typ) EVMrms = 1.5 pct (typ) Easy powe
BLF4G20-110B Philips - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 650 mA: Load power = 48 W (AV) Gain = 13.8 dB (typ) Efficiency = 38.5 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -74 dBc (typ) EVMrms = 2.
BLF4G20LS-110B Philips - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 650 mA: Load power = 48 W (AV) Gain = 13.8 dB (typ) Efficiency = 38.5 pct. (typ) ACPR400 = -61 dBc (typ) ACPR600 = -74 dBc (typ) EVMrms = 2.1 pct.
BLF4G20S-110B Philips - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 650 mA: Load power = 48 W (AV) Gain = 13.8 dB (typ) Efficiency = 38.5 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -74 dBc (typ) EVMrms = 2.
BLF4G22-100 Philips - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-Carrier W-CDMA performance atA supply voltage of 28V and an IDq of 900 mA: Load power = 25 W (AV) Gain = 13.5 dB (typ) Efficiency = 26 pct. (typ) ACPR = -41 dBc (typ) IMD3 = -37 dBc (typ) Easy power control Integrated ESD protection Excellent
BLF4G22S-100 Philips - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-Carrier W-CDMA performance atA supply voltage of 28V and an IDq of 900 mA: Load power = 25 W (AV) Gain = 13.5 dB (typ) Efficiency = 26 pct. (typ) ACPR = -41 dBc (typ) IMD3 = -37 dBc (typ) Easy power control Integrated ESD protection Excellent
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