SS-P Omron - Subminiature Snap Action SwitchSwitch rating of 3A at 125 VAC possible withA single-leaf movable spring.Long mechanical life.Internal lever provides increased durability and sensitivity.Solder, quick-connect terminals (#110), PCB terminals, and even-pitched PCB terminals are available.Flux tight base
SSP3076EEN/TR Sipex - High Speed, 3.3V, 15kV, Failsafe RS-485/RS422 Full DuplexFeatures * ±15kV ESD protection for RS485 pins * 3.3V low-power operation * Advanced receiver-failsafe protection for open, shorted or terminated lines * Up to 256 Transceivers may share bus * Very low load for 8x greater fan-out * Hot Swap glitch protection RE and DE * Thermal shutdown protects against driver contention * Available in three industry standard footprints * SP3070E, SP3073E and SP3076E in Full-Duplex (14 pin)
SST11LP11 SST - 4.9-5.8 GHz High-Linearity Power AmplifierThe SST11LP11 is an efficient high power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology.The SST11LP11 is designed to operate over the entire WLAN 802.11a band between 4.9-5.8 GHz frequency band for the U.S., European, and Japanese markets while achieving highly-linear power and low EVM.The SST11LP11 power amplifier IC features easy boardlevel usage along with on-chip linear power detection and power-down control. These features coupled with low
SST11LP12 SST - 4.9-5.8 GHz High-Linearity Power AmplifierThe SST11LP12 isA high-power, high-gain power...
SST12LP00 SST - 2.4 GHz Power Amplifier (Bluetooth) The SST12LP00 isA high-performance power amplifier designed for Bluetooth in the 2.4 GHz band.The SST12LP00 is based on the highly-reliable InGaP HBT technology and provides 29 dB gain and 23 dBm P-1dB—ideal for final stage power amplification in Bluetooth transmitter applications.The SST12LP00 is offered inA 6-contact VQFN package.
SST12LP10 SST - 2.4 GHz High-Linearity Power AmplifierThe SST12LP10 isA high-performance power amplifie...
SST12LP14 SST - 2.4 GHz Power AmplifierThe SST12LP14 isA high-performance power amplifier IC based on t...
SST12LP14A SST - 2.4 GHz High-Power, High-Gain Power AmplifierThe SST12LP14A isA versatile power amplifi...
SST12LP15 SST - 2.4 GHz High-Power, High-Gain Power AmplifierThe SST12LP15 isA high-power, high-gain po...
SST12LP15A SST - 2.4 GHz High-Power, High-Gain Power AmplifierThe SST12LP15A isA high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP15A can be easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15A has excellent linearity, t
SST215 Linear IS - HIGH SPEED DMOS FET ANALOG SWITCHES and SWITCH ARRAYS
SST215 Linear IS - N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
SST215 Linear IS - N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS
SST215 Linear IS - N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
SST2222A Rohm - NPN Medium Power Transistor (Switching)
SST25LF040A SST - 4 Mbit SPI Serial FlashThe SST25LF040A devices significantly improve performance, while lowering power consumption. The total energy consumed isA function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and hasA shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25LF040A devices operate withA single 3.0-3.6V power s
SST25LF080A SST - 8 Mbit SPI Serial FlashThe SST25LF080A devices significantly improve performance, while lowering power consumption. The total energy consumed isA function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and hasA shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25LF080A devices operate withA single 3.0-3.6V power s
SST25LF080A-33-4C-S2A SST - 8 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF080A SPI serial flash memories are manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25LF080A devices significantl
SST25LF080A-33-4C-S2AE SST - 8 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF080A SPI serial flash memories are manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25LF080A devices significantl
SST25LF080A-33-4E-S2A SST - 8 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF080A SPI serial flash memories are manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25LF080A devices significantl
SST25LF080A-33-4E-S2AE SST - 8 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF080A SPI serial flash memories are manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25LF080A devices significantl
SST25LF080A-33-4I-S2A SST - 8 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF080A SPI serial flash memories are manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25LF080A devices significantl
SST25LF080A-33-4I-S2AE SST - 8 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF080A SPI serial flash memories are manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25LF080A devices significantl
SST25VF010A SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4C-QA SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4C-QAE SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4C-SA SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4C-SAE SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4E-QA SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4E-QAE SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4E-SA SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4E-SAE SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4I-QA SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4I-QAE SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4I-SA SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF010A-33-4I-SAE SST - 1 Mbit SPI Serial FlashSST’s serial flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST25VF010A device significantly im
SST25VF016B SST - 16 Mbit SPI Serial FlashSST\'s 25 Series Serial Flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF016B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. SST25VF016B SPI serial flash memories are manufactured with SST\'s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell de
SST25VF040 SST - PRODUCT DESCRIPTIONSST’s serial flash family featuresA four-wire, SPI-compatibleinterface that allows forA low pin-count packageoccupying less board space and ultimately lowering totalsystem costs. SST25VF020/040 SPI serial flash memoriesare manufactured with SST’s proprietary, high performanceCMOS SuperFlash Technology. The split-gatecell design and thick-oxide tunneling injector attain betterreliability and manufacturability compared with alternateapproaches.The SST25VF020/040 devices significantly impr
SST25VF040-20-4C-QA SST - Voltage = 2.7 to 3.6 ; Density = 4Mb ; Organization = 512Kb X 8 ; Speed = 0 - 20 MHZ ; Temp. = Commercial ; Package = Qfn/wson
SST25VF040B SST - 4 Mbit SPI Serial FlashSST’s 25 Series Serial Flash family featuresA four-wire, SPI-compatible interface that allows forA low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF040B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. SST25VF040B SPI serial flash memories are manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell desig
SST25VF040B SST - PRODUCT DESCRIPTIONSST’s 25 Series Serial Flash family featuresA four-wire,SPI-compatible interface that allows forA low pin-countpackage which occupies less board space and ultimatelylowers total system costs. The SST25VF040B devices areenhanced with improved operating frequency and evenlower power consumption than the original SST25VFxxxAdevices. SST25VF040B SPI serial flash memories aremanufactured with SST’s proprietary, high-performanceCMOS SuperFlash technology. The split-gate cell designand thick-o
SST25VF080-33-4C-QA SST - Voltage = 2.7 to 3.6 ; Density = 8Mb ; Organization = 1Mb X 8 ; Speed = 0 - 20 MHZ ; Temp. = Commercial ; Package = Qfn/wson
SST25VF080-33-4C-SA SST - Voltage = 2.7 to 3.6 ; Density = 8Mb ; Organization = 1Mb X 8 ; Speed = 0 - 20 MHZ ; Temp. = Commercial ; Package = Soic
SST25VF080B SST - PRODUCT DESCRIPTIONSST’s 25 Series Serial Flash family featuresA four-wire,SPI-compatible interface that allows forA low pin-countpackage which occupies less board space and ultimatelylowers total system costs. The SST25VF080B devices areenhanced with improved operating frequency and evenlower power consumption than the original SST25VFxxxAdevices. SST25VF080B SPI serial flash memories aremanufactured with SST’s proprietary, high-performanceCMOS SuperFlash technology. The split-gate cell designand thick-o
SST34HF3242C SST - 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemoryThe SST34HF32x2xC/32x4x ComboMemory devices integrate eitherA 2M x16 or 4M x8 CMOS flash memory bank with eitherA 256K x16 or 512K x16 CMOS SRAM or pseudo SRAM (PSRAM) memory bank inA multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with
SST34HF3244C SST - 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemoryThe SST34HF32x2xC/32x4x ComboMemory devices integrate eitherA 2M x16 or 4M x8 CMOS flash memory bank with eitherA 256K x16 or 512K x16 CMOS SRAM or pseudo SRAM (PSRAM) memory bank inA multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with
SST34HF3282 SST - 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemoryThe SST34HF32x2xC/32x4x ComboMemory devices integrate eitherA 2M x16 or 4M x8 CMOS flash memory bank with eitherA 256K x16 or 512K x16 CMOS SRAM or pseudo SRAM (PSRAM) memory bank inA multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with
SST34HF3284 SST - 32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemoryThe SST34HF32x2xC/32x4x ComboMemory devices integrate eitherA 2M x16 or 4M x8 CMOS flash memory bank with eitherA 256K x16 or 512K x16 CMOS SRAM or pseudo SRAM (PSRAM) memory bank inA multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with
SST36VF1601-90-4C-B3K SST - Voltage = 2.7 to 3.6 ; Density = 16Mb ; Organization = 1Mb X 16 ; Speed = 90 NS ; Temp. = Commercial ; Package = Tfbga/tbga
SST36VF1601-90-4C-EK SST - Voltage = 2.7 to 3.6 ; Density = ; Organization = ; Speed = 90 NS ; Temp. = Commercial ; Package = PLCC
SST36VF1601-90-4E-B3K SST - Voltage = 2.7 to 3.6 ; Density = 16Mb ; Organization = 1Mb X 16 ; Speed = 90 NS ; Temp. = Extended ; Package = Tfbga/tbga
SST36VF1601-90-4E-EK SST - Voltage = 2.7 to 3.6 ; Density = ; Organization = ; Speed = 90 NS ; Temp. = Extended ; Package = PLCC
SST36VF1601E SST - 16 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high perfor
SST36VF1602E SST - 16 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high perfor
SST36VF3203 SST - 32 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF320x are 2M x16 or 4M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high performance Word-Program, these
SST36VF3204 SST - 32 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF320x are 2M x16 or 4M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high performance Word-Program, these
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