K4H280838F-TC/LB3 (Samsung) - 4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of, DDR SDRAM (128 Мб)

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K4H280838F-TC/LB3 (Samsung)

Подробное описание (datasheet) электронного компонента «K4H280838F-TC/LB3» (DDR SDRAM (128 Мб)), производства Samsung. Выберите наиболее удобный формат.

Datasheet K4H280838F-TC/LB3 производства Samsung

Маркировка	K4H280838F-TC/LB3
Описание	4M x 8Bit x 4 Banks Double Data Rate SDRAMThe K4H280838F is 134,217,728 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/ 8bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful forA variety of
Функционал	DDR SDRAM (128 Мб)
Производитель	Samsung semiconductor
Сайт	www.samsung.com

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K4H280838F, K4H280838F-TC/LB3, K4H280838F-UC/LA2, K4H280838F-UC/LB0

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