K1B3216B7D - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance feature.
K1B3216BDD - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B5616BAM - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B5616BAM-I - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B5616BBM - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B5616BBM-I - 16M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need bigger & faster memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1B6416B6C - 4mx16 Bit Synchronous Burst Uni-transistor Random Access Memory
K1B6416B6C-I - 4M x 16 bit Synchronous Burst Uni-Transistor CMOS RAMThe world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG\'s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market.
K1S161611A - 1Mx16 bit Uni-Transistor Random Access Memory
K1S161611A-I - 1Mx16 bit Uni-Transistor Random Access Memory
K1S16161CA - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
K1S16161CA-I - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
K1S1616B1A - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616B1A-BI70 - 1mx16 Bit Uni-transistor Random Access Memory
K1S1616B1A-BI85 - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616B1A-FI70 - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616B1A-FI85 - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616B1A-I - 1Mx16 bit Uni-Transistor Random Access Memory
K1S1616BCA - 1mx16 Bit Page Mode Uni-transistor Random Access Memory
K1S1616BCA-I - 1Mx16 bit Page Mode Uni-Transistor Random Access MemoryThe K1S1616BCA is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S2816BCM - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
K1S2816BCM-I - 8M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S2816BCM is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
K1S321611C - 2Mx16 bit Uni-Transistor Random Access Memory
K1S321611C-FI70 - 2Mx16 bit Uni-Transistor Random Access Memory
K1S321611C-I - 2mx16 Bit Uni-transistor Random Access Memory
K1S321615M - 2mx16 Bit Uni-transistor Random Access Memory
K1S321615M-E - 2Mx16 bit Uni-Transistor Random Access Memory
K1S3216B1C - 2Mx16 bit Uni-Transistor Random Access Memory
K1S3216B1C-I - 2mx16 Bit Uni-transistor Random Access Memory
K1S3216BCC - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S3216BCC-FI70 - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S3216BCC-FI85 - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S3216BCD - 2mx16 Bit Page Mode Uni-transistor Random Access Memory
K1S3216BCD-I - 2M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S3216BCD is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
K1S64161CC - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
K1S64161CC-I - 4M x 16 bit Page Mode Uni-Transistor CMOS RAMThe K1S64161CC is fabricated by SAMSUNG\'s advanced CMOS technology using one transistor memory cell.The device supports 4 page read operation and Industrial temperature range.The device supports dual chip selection for user interface.The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
K1S6416BCC - 4mx16 Bit Page Mode Uni-transistor Random Access Memory
K1S6416BCC-I - 4Mx16 bit Page Mode Uni-Transistor Random Access Memory
K3N3C1000D - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C1000D-DC - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C1000D-DGC - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C1000D-GC - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C1000D-TCE - K3N3C1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C3000D - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C3000D-DGC - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C3000D-GC - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C3000D-YCE - K3N3C3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 32DIP,32SOP,32TSOP1 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3C6000D - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
K3N3C6000D-DC - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
K3N3C6000D-DC08 - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
K3N3C6000D-DC10 - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
K3N3C6000D-DC12 - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package = 40DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = EPROM Type
K3N3U1000D - K3N3U1000D,K3N3V1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3U3000D - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3U3000D-AC - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3U3000D-AE - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3U3000D-DC - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3U3000D-YC - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3U3000D-YE - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3V1000D - K3N3U1000D, K3N3V1000D 4M-Bit (512K X 8 / 256K X 16) CMOS Mask ROM ; Organization = 512Kx8,256Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44TSOP2,40DIP,40SOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3V3000D - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3V3000D-AC - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3V3000D-AE - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3V3000D-GC - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3V3000D-YC - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3V3000D-YE - K3N3V3000D, K3N3U3000D 4M-Bit (512K X 8) CMOS Mask ROM ; Organization = 512Kx8 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 32DIP,32SOP,32TSOP ; Current (mA/uA) = 20,25/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N3V6000D - K3N3V6000D 4M-Bit (256K X 16) CMOS Mask ROM(ePROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 120,100 ; Package = 40DIP ; Current (mA/uA) = 20,25/30 ; Production Status = Eol ; Comments = EPROM Type
K3N4C1000D - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C1000D-DC - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C1000D-DG - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C1000D-TC - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C1000D-TCE - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C1000D-TE - K3N4C1000D 8M-Bit (1M X 8 / 512K X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C1000E - K3N4C1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
K3N4C3000D - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C3000D-DC - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C3000D-DGC - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4C3000D-GC - K3N4C3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4U1000D - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
K3N4U1000D-DGC - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
K3N4U1000D-TCE - K3N4U1000D 8M-Bit (1Mx8 / 512x16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
K3N4U3000D - K3N4U3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4U3000D-DGC - K3N4U3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4V1000D - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
K3N4V1000D-DGC - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
K3N4V1000D-TCE - K3N4V1000D 8M-Bit (1M X 8/512 X 16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. 03\'
K3N4V1000E - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
K3N4V1000E-DC10 - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
K3N4V1000E-DC12 - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
K3N4V1000E-GC10 - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
K3N4V1000E-GC12 - K3N4V1000E 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 30/30 ; Production Status = Mass Production ; Comments = -
K3N4V3000D - K3N4V3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N4V3000D-DGC - K3N4V3000D 8M-Bit (1M X 8) CMOS Mask ROM ; Organization = 1Mx8 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 32DIP,32SOP ; Current (mA/uA) = 25,30/30 ; Production Status = Mass Production ; Comments = Eol BY Dec. \'03
K3N5C1000D - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5C1000D-DC - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5C1000D-DGC - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5C1000D-GC - K3N5C1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 70/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5C1000E - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5C1000E-TC - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5C1000E-TC10 - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5C1000E-TC12 - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5C1000E-TC15 - K3N5C1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8 / 1Mx16 ; Voltage(V) = - ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5U1000D - K3N5U1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5U1000E - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5U1000E-DC12 - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5U1000E-GC12 - K3N5U1000E 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5U1000F - K3N5U1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.0 ; Speed(ns) = 120 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
K3N5V1000D - K3N5V1000D 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5V1000E - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5V1000E-DC10 - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5V1000E-DC12 - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5V1000E-GC10 - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5V1000E-GC12 - K3N5V1000F 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44 SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N5V1000F - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
K3N5V1000F-DC10 - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
K3N5V1000F-DC12 - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
K3N5V1000F-GC10 - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
K3N5V1000F-GC12 - K3N5V1000F 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM ; Organization = 2Mx8,1Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100(50pF) ; Package = 42DIP,44SOP,44TSOP2 ; Current (mA/uA) = 35,40/30 ; Production Status = Mass Production ; Comments = -
K3N6C1000C - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C1000C-GC - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C1000C-TC - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C1000C-TCE - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C1000C-TE - K3N6C1000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C1000E - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C1000E-TC - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C1000E-TC10 - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C1000E-TC12 - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C1000E-TC15 - K3N6C1000E 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 4Mx8,2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 48TSOP1,44TSOP2,44SOP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C1000F - K3N6C1000F 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
K3N6C1000F-C - K3N6C1000F 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 100 ; Package = 44SOP,44TSOP2 ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = -
K3N6C3000C - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C3000C-DC - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C3000C-DC10 - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C3000C-DC12 - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C3000C-DC15 - K3N6C3000C 32M-Bit (4M X 8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C3000E - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C3000E-DC - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C3000E-DC10 - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C3000E-DC12 - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C3000E-DC15 - K3N6C3000E 32M-Bit (4Mx8) CMOS Mask ROM ; Organization = 4Mx8 ; Voltage(V) = 5 ; Speed(ns) = 100(50pF) ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Mass Production ; Comments = Eol BY Dec.\'03
K3N6C4000C - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C4000C-DC - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -
K3N6C4000C-DC10 - K3N6C4000C 32M-Bit (2M X 16) CMOS Mask ROM ; Organization = 2Mx16 ; Voltage(V) = 5 ; Speed(ns) = 100 ; Package = 42DIP ; Current (mA/uA) = 50/50 ; Production Status = Eol ; Comments = -