K9K8G08U0M-Y,P (Samsung) - 4G x 8 Bit NAND Flash MemoryOffered in 1G x 8bit, the K9K8G08U0M isA 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5M:50ns) cycle time per Byte., NAND Flash

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K9K8G08U0M-Y,P (Samsung)

Electronic component documentation (datasheet) «K9K8G08U0M-Y,P» (NAND Flash), manufacturer Samsung. Download datasheet file:

Datasheet K9K8G08U0M-Y,P manufacturer Samsung

Partname	K9K8G08U0M-Y,P
Description	4G x 8 Bit NAND Flash MemoryOffered in 1G x 8bit, the K9K8G08U0M isA 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5M:50ns) cycle time per Byte.
Functional	NAND Flash
Manufacturer	Samsung semiconductor
Site	www.samsung.com

Size	Pages: 50, 1.22Mb
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K9K8G08U0M-Y,P, K9NBG08U5M, K9NBG08U5M-P, K9WAG08U1M-I

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