IS93C76A - 8k-bit/16k-bit Serial Electrically Erasable Prom
IS93C76A-2GRI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C76A-2GRLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C76A-2PI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C76A-2PLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C76A-2ZI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C76A-2ZLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C76A-3GRLA3 - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C76A-3PLA3 - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C76A-3ZLA3 - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROMIS93C76A/86A are 8kb/16kb non-volatile, ISSI ®serial EEPROMs. They are fabricated using anenhanced CMOS design and process. IS93C76A/86A contains power-efficient read/write memory,and organization of either 1,024/2,048 bytes of 8bits or 512/1,024 words of 16 bits. When theORG pin is connected to Vcc or left unconnected,x16 is selected; when it is connected to ground,x8 is selected.An instruction set defines the operation of thedevices, including read, write, a
IS93C86A-2GRI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-2GRLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-2PI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-2PLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-2ZI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-2ZLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3GRI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3GRLA3 - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3GRLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3PI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3PLA3 - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3PLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3ZI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3ZLA3 - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C86A-3ZLI - 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
S42R32200C1-75TI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMThe 64Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 2.5Vmemory systems containing 67,108,864 bits. Internallyconfigured asA quad-bank DRAM withA synchronousinterface. Each 16,777,216-bit bank is organized as 2,048rows by 256 columns by 32 bits.The 64Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK.All inputs an
S42S16800B - 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 512 columns by 16 bits or 4,096 rowsby 1,024 columns by 8 bits.
S61C6416AL-12TI - 64K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C6416AL, IS62C6416AL, IS64C6416AL andIS65C6416AL are high-speed, 1,048,576-bit static RAMsorganized as 65,536 words by 16 bits. They are fabricatedusing ISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption.
S61LPD51236A - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
S61LV6416-10KLI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
S62WV25616ALL/BLL - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAMThe ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed,low power, 4M bit SRAMs organized as 256K wordsby 16 bits. It is fabricated using ISSI\'s high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices.
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