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Electronic components list ISSI, page 4



  1. Integrated Silicon Solution
    Site: www.issi.com
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    IS61C1024L-20JI - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  2. IS61C1024L-20K - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  3. IS61C1024L-20KI - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  4. IS61C1024L-20T - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  5. IS61C1024L-20TI - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  6. IS61C1024L-25 - 128Kx8
  7. IS61C1024L-25H - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  8. IS61C1024L-25HI - 128K X 8 High-speed CMOS Static RAM
  9. IS61C1024L-25I - 128Kx8
  10. IS61C1024L-25J - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  11. IS61C1024L-25JI - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  12. IS61C1024L-25K - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  13. IS61C1024L-25KI - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  14. IS61C1024L-25T - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  15. IS61C1024L-25TI - 128K x 8 HIGH-SPEED CMOS STATIC RAM
  16. IS61C1024L-35 - 128Kx8
  17. IS61C1024S-20 - 128Kx8 High-speed CMOS Static RAM
  18. IS61C1024S-25 - 128Kx8 High-speed CMOS Static RAM
  19. IS61C1024S-35 - 128Kx8 High-speed CMOS Static RAM
  20. IS61C12816 - 128k X 16 High-speed Cmos Static Ram
  21. IS61C12816-10 -
  22. IS61C12816-12 -
  23. IS61C12816-12I -
  24. IS61C12816-12K - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  25. IS61C12816-12KI - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  26. IS61C12816-12T - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  27. IS61C12816-12TI - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  28. IS61C12816-15 -
  29. IS61C12816-15I -
  30. IS61C12816-15K - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  31. IS61C12816-15KI - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  32. IS61C12816-15T - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  33. IS61C12816-15TI - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  34. IS61C12816-20 -
  35. IS61C12816-20I -
  36. IS61C12816-20K - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  37. IS61C12816-20KI - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  38. IS61C12816-20T - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  39. IS61C12816-20TI - 128K x 16 HIGH-SPEED CMOS STATIC RAM
  40. IS61C256 - Write Cycle Switching Characteristics
  41. IS61C25616 - 256k X 16 High Speed Asynchronous Cmos Static Ram With 5v Supply
  42. IS61C256AH - 32k X 8 High-speed Cmos Static Ram
  43. IS61C256AH-10 - 32Kx8 High-speed CMOS Static RAM
  44. IS61C256AH-10J - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  45. IS61C256AH-10JI - 256K 32Kx8
  46. IS61C256AH-10N - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  47. IS61C256AH-10T - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  48. IS61C256AH-12 - 32Kx8 High-speed CMOS Static RAM
  49. IS61C256AH-12I - 32Kx8 High-speed CMOS Static RAM
  50. IS61C256AH-12J - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  51. IS61C256AH-12JI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  52. IS61C256AH-12N - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  53. IS61C256AH-12NI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  54. IS61C256AH-12T - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  55. IS61C256AH-12TI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  56. IS61C256AH-15 - 32Kx8 High-speed CMOS Static RAM
  57. IS61C256AH-15I - 32Kx8 High-speed CMOS Static RAM
  58. IS61C256AH-15J - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  59. IS61C256AH-15JI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  60. IS61C256AH-15N - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  61. IS61C256AH-15NI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  62. IS61C256AH-15T - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  63. IS61C256AH-15TI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  64. IS61C256AH-20 - 32Kx8 High-speed CMOS Static RAM
  65. IS61C256AH-20I - 32Kx8 High-speed CMOS Static RAM
  66. IS61C256AH-20J - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  67. IS61C256AH-20JI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  68. IS61C256AH-20N - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  69. IS61C256AH-20NI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  70. IS61C256AH-20T - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  71. IS61C256AH-20TI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  72. IS61C256AH-25 - 32Kx8 High-speed CMOS Static RAM
  73. IS61C256AH-25I - 32Kx8 High-speed CMOS Static RAM
  74. IS61C256AH-25J - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  75. IS61C256AH-25JI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  76. IS61C256AH-25N - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  77. IS61C256AH-25NI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  78. IS61C256AH-25T - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  79. IS61C256AH-25TI - 32K x 8 HIGH-SPEED CMOS STATIC RAM
  80. IS61C256AH-8 - 32Kx8 High-speed CMOS Static RAM
  81. IS61C256AH-8I - 32Kx8 High-speed CMOS Static RAM
  82. IS61C256AHconfirmspeedpackage - 256K 32Kx8
  83. IS61C256AL - 32k X 8 High-speed Cmos Static Ram
  84. IS61C256AL-10J - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  85. IS61C256AL-10JL - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  86. IS61C256AL-10T - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  87. IS61C256AL-10TL - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  88. IS61C256AL-12J - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  89. IS61C256AL-12JI - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  90. IS61C256AL-12JL - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  91. IS61C256AL-12JLI - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  92. IS61C256AL-12T - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  93. IS61C256AL-12TI - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  94. IS61C256AL-12TL - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  95. IS61C256AL-12TLI - 32K X 8 HIGH-SPEED CMOS STATIC RAM
  96. IS61C3216-10 - 32Kx16 High-speed CMOS Static RAM
  97. IS61C3216-10K - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  98. IS61C3216-10T - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  99. IS61C3216-12 - 32Kx16 High-speed CMOS Static RAM
  100. IS61C3216-12K - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  101. IS61C3216-12KI - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  102. IS61C3216-12T - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  103. IS61C3216-12TI - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  104. IS61C3216-15 - 32Kx16 High-speed CMOS Static RAM
  105. IS61C3216-15K - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  106. IS61C3216-15KI - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  107. IS61C3216-15T - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  108. IS61C3216-15TI - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  109. IS61C3216-20 - 32Kx16 High-speed CMOS Static RAM
  110. IS61C3216-20K - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  111. IS61C3216-20KI - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  112. IS61C3216-20T - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  113. IS61C3216-20TI - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  114. IS61C3216AL - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  115. IS61C3216AL-12K - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  116. IS61C3216AL-12KI - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  117. IS61C3216AL-12KLI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C3216AL is high-speed, 512Kb static RAMsorganized as 32,768 words by 16 bits. They are fabricatedusing ISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption.
  118. IS61C3216AL-12T - 32K x 16 HIGH-SPEED CMOS STATIC RAM
  119. IS61C3216AL-12TI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C3216AL is high-speed, 512Kb static RAMsorganized as 32,768 words by 16 bits. They are fabricatedusing ISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption.
  120. IS61C3216AL-12TLI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C3216AL is high-speed, 512Kb static RAMsorganized as 32,768 words by 16 bits. They are fabricatedusing ISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption.
  121. IS61C3216B - 32k X 16 High-speed CMOS SRAM
  122. IS61C3216B-10 - 512K 32Kx16
  123. IS61C3216B-12 - 512K 32Kx16
  124. IS61C3216B-12K - 512K 32Kx16
  125. IS61C3216B-15 - 512K 32Kx16
  126. IS61C3216B-15K - 512K 32Kx16
  127. IS61C3216B-20 - 512K 32Kx16
  128. IS61C632 - Synchronous Fast Static RAM: 32kx32
  129. IS61C632A-10 - 32Kx32 Synchronous Pipelined Static RAM
  130. IS61C632A-12 - 32Kx32 Synchronous Pipelined Static RAM
  131. IS61C632A-4 - 32Kx32 Synchronous Pipelined Static RAM
  132. IS61C632A-5 - 32Kx32 Synchronous Pipelined Static RAM
  133. IS61C632A-5TQI - 1M 32Kx32
  134. IS61C632A-6 - 32Kx32 Synchronous Pipelined Static RAM
  135. IS61C632A-6I - 32Kx32 Synchronous Pipelined Static RAM
  136. IS61C632A-6PQI - 32K X 32 Synchronous Pipelined Static RAM
  137. IS61C632A-6TQI - 32K X 32 Synchronous Pipelined Static RAM
  138. IS61C632A-7 - 32Kx32 Synchronous Pipelined Static RAM
  139. IS61C632A-7I - 32Kx32 Synchronous Pipelined Static RAM
  140. IS61C632A-7PQI - 32K X 32 Synchronous Pipelined Static RAM
  141. IS61C632A-7TQI - 32K X 32 Synchronous Pipelined Static RAM
  142. IS61C632A-8 - 32Kx32 Synchronous Pipelined Static RAM
  143. IS61C632A-8I - 32Kx32 Synchronous Pipelined Static RAM
  144. IS61C632A-8PQI - 32K X 32 Synchronous Pipelined Static RAM
  145. IS61C632A-8TQI - 32K X 32 Synchronous Pipelined Static RAM
  146. IS61C632A-9PQ - 1M 32Kx32
  147. IS61C6416 - 64k X 16 High-speed Cmos Static Ram
  148. IS61C6416-10 - 64Kx16 High-speed CMOS Static RAM
  149. IS61C6416-10K - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  150. IS61C6416-10T - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  151. IS61C6416-12 - 64Kx16 High-speed CMOS Static RAM
  152. IS61C6416-12I - 64Kx16 High-speed CMOS Static RAM
  153. IS61C6416-12K - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  154. IS61C6416-12KI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  155. IS61C6416-12T - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  156. IS61C6416-12TI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  157. IS61C6416-15 - 64Kx16 High-speed CMOS Static RAM
  158. IS61C6416-15I - 64Kx16 High-speed CMOS Static RAM
  159. IS61C6416-15K - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  160. IS61C6416-15KI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  161. IS61C6416-15T - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  162. IS61C6416-15TI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  163. IS61C6416-20 - 64Kx16 High-speed CMOS Static RAM
  164. IS61C6416-20I - 64Kx16 High-speed CMOS Static RAM
  165. IS61C6416-20K - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  166. IS61C6416-20KI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  167. IS61C6416-20T - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  168. IS61C6416-20TI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  169. IS61C6416-25 - 64Kx16 High-speed CMOS Static RAM
  170. IS61C6416AL - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  171. IS61C6416AL-12K - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  172. IS61C6416AL-12KI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  173. IS61C6416AL-12KLI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  174. IS61C6416AL-12T - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  175. IS61C6416AL-12TI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  176. IS61C6416AL-12TLI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
  177. IS61C64AL - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  178. IS61C64AL-10JI - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  179. IS61C64AL-10JLI - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  180. IS61C64AL-10TI - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  181. IS61C64AL-10TLI - 8K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C64AL isA very high-speed, low power,8192-word by 8-bit static RAM. It is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields access times as fast as 10 ns with low powerconsumption.
  182. IS61C64B - 8k X 8 High-speed Cmos Static Ram
  183. IS61C64B-10 - 8Kx8 High-speed CMOS Static RAM
  184. IS61C64B-10J - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  185. IS61C64B-10T - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  186. IS61C64B-12 - 8Kx8 High-speed CMOS Static RAM
  187. IS61C64B-12J - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  188. IS61C64B-12T - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  189. IS61C64B-15 - 8Kx8 High-speed CMOS Static RAM
  190. IS61C64B-15J - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  191. IS61C64B-15JI - 64K 8Kx8
  192. IS61C64B-15T - 8K x 8 HIGH-SPEED CMOS STATIC RAM
  193. IS61C67 - 16k X 1 High Speed Cmos Static Ram
  194. IS61C67-15N - 16K X 1 HIGH SPEED CMOS STATIC RAM
  195. IS61C67-20N - 16K X 1 HIGH SPEED CMOS STATIC RAM
  196. IS61C67-25N - 16K X 1 HIGH SPEED CMOS STATIC RAM
  197. IS61C67-L15N - 16K X 1 HIGH SPEED CMOS STATIC RAM
  198. IS61C67-L20N - 16K X 1 HIGH SPEED CMOS STATIC RAM
  199. IS61C67-L25N - 16K X 1 HIGH SPEED CMOS STATIC RAM
  200. IS61DDB21M36 - DDR-II (Burst of 2) CIO Synchronous SRAMsThe 36Mb IS61DDB21M36 andIS61DDB22M18 are synchronous, high-performanceCMOS static random access memory(SRAM) devices. These SRAMs haveA common I/Obus. The rising edge of K clock initiates theread/write operation, and all internal operations areself-timed.
  201. IS61DDB21M36-250M3 - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
  202. IS61DDB22M18 - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
  203. IS61DDB22M18-250M3 - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
  204. IS61DDB41M36 - DDR-II (Burst of 4) CIO Synchronous SRAMsThe 36Mb IS61DDB41M36 and IS61DDB42M18are synchronous, high-performance CMOS staticrandom access memory (SRAM) devices. TheseSRAMs haveA common I/O bus. The rising edge ofK clock initiates the read/write operation, and allinternal operations are self-timed. Refer to theTiming Reference Diagram for Truth Table on p.8forA description of the basic operations of theseDDR-II (Burst of 4) CIO SRAMs.
  205. IS61DDB41M36-250M3 - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
  206. IS61DDB42M18 - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
  207. IS61DDB42M18-250M3 - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
  208. IS61FSCS25672 - 18M 256K X 72
  209. IS61FSCS25672-7.2B - 18M 256K X 72
  210. IS61FSCS25672-7.5B - 18M 256K X 72
  211. IS61FSCS25672-8.5B - 18M 256K X 72
  212. IS61FSCS25672-8B - 18M 256K X 72
  213. IS61FSCS25672-9B - 18M 256K X 72
  214. IS61FSCS51236 - 512K X 36
  215. IS61FSCS51236-7.2B - 512K X 36
  216. IS61FSCS51236-7.5B - 512K X 36
  217. IS61FSCS51236-8.5B - 512K X 36
  218. IS61FSCS51236-8B - 512K X 36
  219. IS61FSCS51236-9B - 512K X 36
  220. IS61LF102418A - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  221. IS61LF102418A-6.5B2 - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  222. IS61LF102418A-6.5B2I - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  223. IS61LF102418A-6.5B3 - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  224. IS61LF102418A-6.5B3I - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  225. IS61LF102418A-6.5TQ - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  226. IS61LF102418A-6.5TQI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  227. IS61LF102418A-7.5TQ - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  228. IS61LF102418A-7.5TQI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  229. IS61LF12832 - 128Kx32
  230. IS61LF12832-7.5B - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  231. IS61LF12832-7.5BI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  232. IS61LF12832-7.5TQ - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  233. IS61LF12832-7.5TQI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  234. IS61LF12832-8.5B - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  235. IS61LF12832-8.5BI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  236. IS61LF12832-8.5TQ - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  237. IS61LF12832-8.5TQI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  238. IS61LF12832A - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
  239. IS61LF12832A-6.5B2 - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  240. IS61LF12832A-6.5B3 - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  241. IS61LF12832A-6.5TQ - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  242. IS61LF12832A-7.5TQ - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  243. IS61LF12836 - 128Kx36
  244. IS61LF12836-7.5B - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  245. IS61LF12836-7.5BI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  246. IS61LF12836-7.5TQ - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  247. IS61LF12836-7.5TQI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  248. IS61LF12836-8.5B - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  249. IS61LF12836-8.5BI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  250. IS61LF12836-8.5TQ - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  251. IS61LF12836-8.5TQI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
  252. IS61LF12836A - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
  253. IS61LF12836A-6.5B2 - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  254. IS61LF12836A-6.5B3 - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  255. IS61LF12836A-6.5TQ - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  256. IS61LF12836A-7.5TQ - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  257. IS61LF25618A - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  258. IS61LF25618A-6.5B2 - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  259. IS61LF25618A-6.5B3 - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  260. IS61LF25618A-7.5TQ - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
  261. IS61LF25632D - 8M 256Kx32
  262. IS61LF25632D-10B - 256K X 32 Synchronous Flow-through Static RAM
  263. IS61LF25632D-10TQ - 256K X 32 Synchronous Flow-through Static RAM
  264. IS61LF25632D-10TQI - 256K X 32 Synchronous Flow-through Static RAM
  265. IS61LF25632D-6.5TQI - 8M 256Kx32
  266. IS61LF25632D-7.5B - 8M 256Kx32
  267. IS61LF25632D-7.5TQ - 8M 256Kx32
  268. IS61LF25632D-7.5TQI - 8M 256Kx32
  269. IS61LF25632D-8.5B - 256K X 32 Synchronous Flow-through Static RAM
  270. IS61LF25632D-8.5TQ - 256K X 32 Synchronous Flow-through Static RAM
  271. IS61LF25632D-8.5TQI - 256K X 32 Synchronous Flow-through Static RAM
  272. IS61LF25632D-9B - 256K X 32 Synchronous Flow-through Static RAM
  273. IS61LF25632D-9TQ - 256K X 32 Synchronous Flow-through Static RAM
  274. IS61LF25632D-9TQI - 256K X 32 Synchronous Flow-through Static RAM
  275. IS61LF25632J - 256Kx32
  276. IS61LF25632T - 256Kx32
  277. IS61LF25632T-10TQ - 256K X 32 Synchronous Flow-through Static RAM
  278. IS61LF25632T-10TQI - 256K X 32 Synchronous Flow-through Static RAM
  279. IS61LF25632T-6.5TQ - 256Kx32
  280. IS61LF25632T-6.5TQI - 256Kx32
  281. IS61LF25632T-7.5TQ - 256Kx32
  282. IS61LF25632T-7.5TQI - 256Kx32
  283. IS61LF25632T-8.5TQ - 256K X 32 Synchronous Flow-through Static RAM
  284. IS61LF25632T-8.5TQI - 256K X 32 Synchronous Flow-through Static RAM
  285. IS61LF25632T-9TQ - 256K X 32 Synchronous Flow-through Static RAM
  286. IS61LF25632T-9TQI - 256K X 32 Synchronous Flow-through Static RAM
  287. IS61LF25636A - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
  288. IS61LF25636A-6.5B2 - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  289. IS61LF25636A-6.5B2I - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  290. IS61LF25636A-6.5B3 - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  291. IS61LF25636A-6.5B3I - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  292. IS61LF25636A-6.5TQ - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  293. IS61LF25636A-6.5TQI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  294. IS61LF25636A-7.5TQ - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  295. IS61LF25636A-7.5TQI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  296. IS61LF25636D - 256Kx36
  297. IS61LF25636D-10B - 256K X 36 Synchronous Flow-through Static RAM
  298. IS61LF25636D-10TQ - 256K X 36 Synchronous Flow-through Static RAM
  299. IS61LF25636D-10TQI - 256K X 36 Synchronous Flow-through Static RAM
  300. IS61LF25636D-6.5B - 256Kx36
  301. IS61LF25636D-6.5TQ - 256Kx36
  302. IS61LF25636D-7.5B - 256Kx36
  303. IS61LF25636D-7.5BI - 256Kx36
  304. IS61LF25636D-7.5TQ - 256Kx36
  305. IS61LF25636D-7.5TQI - 256Kx36
  306. IS61LF25636D-8.5B - 256K X 36 Synchronous Flow-through Static RAM
  307. IS61LF25636D-8.5TQ - 256K X 36 Synchronous Flow-through Static RAM
  308. IS61LF25636D-8.5TQI - 256K X 36 Synchronous Flow-through Static RAM
  309. IS61LF25636D-9B - 256K X 36 Synchronous Flow-through Static RAM
  310. IS61LF25636D-9TQ - 256K X 36 Synchronous Flow-through Static RAM
  311. IS61LF25636D-9TQI - 256K X 36 Synchronous Flow-through Static RAM
  312. IS61LF25636J - 256Kx36
  313. IS61LF25636J-6.5B - 256Kx36
  314. IS61LF25636J-7.5B - 256Kx36
  315. IS61LF25636T - 256Kx36
  316. IS61LF25636T-10TQ - 256K X 36 Synchronous Flow-through Static RAM
  317. IS61LF25636T-10TQI - 256K X 36 Synchronous Flow-through Static RAM
  318. IS61LF25636T-6.5TQ - 256Kx36
  319. IS61LF25636T-7.5TQ - 256Kx36
  320. IS61LF25636T-7.5TQI - 256Kx36
  321. IS61LF25636T-8.5TQ - 256K X 36 Synchronous Flow-through Static RAM
  322. IS61LF25636T-8.5TQI - 256K X 36 Synchronous Flow-through Static RAM
  323. IS61LF25636T-9TQ - 256K X 36 Synchronous Flow-through Static RAM
  324. IS61LF25636T-9TQI - 256K X 36 Synchronous Flow-through Static RAM
  325. IS61LF25672A - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
  326. IS61LF51218A - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
  327. IS61LF51218A-6.5B2 - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  328. IS61LF51218A-6.5B2I - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  329. IS61LF51218A-6.5B3 - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  330. IS61LF51218A-6.5B3I - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  331. IS61LF51218A-6.5TQ - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  332. IS61LF51218A-6.5TQI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  333. IS61LF51218A-7.5TQ - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  334. IS61LF51218A-7.5TQI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
  335. IS61LF51218D - 512Kx18
  336. IS61LF51218D-10B - 512K X 18 Synchronous Flow-through Static RAM
  337. IS61LF51218D-10TQ - 512K X 18 Synchronous Flow-through Static RAM
  338. IS61LF51218D-10TQI - 512K X 18 Synchronous Flow-through Static RAM
  339. IS61LF51218D-6.5B - 512Kx18
  340. IS61LF51218D-6.5TQ - 512Kx18
  341. IS61LF51218D-7.5B - 512Kx18
  342. IS61LF51218D-7.5BI - 512Kx18
  343. IS61LF51218D-7.5TQ - 512Kx18
  344. IS61LF51218D-7.5TQI - 512Kx18
  345. IS61LF51218D-8.5B - 512K X 18 Synchronous Flow-through Static RAM
  346. IS61LF51218D-8.5TQ - 512K X 18 Synchronous Flow-through Static RAM
  347. IS61LF51218D-8.5TQI - 512K X 18 Synchronous Flow-through Static RAM
  348. IS61LF51218D-9B - 512K X 18 Synchronous Flow-through Static RAM
  349. IS61LF51218D-9TQ - 512K X 18 Synchronous Flow-through Static RAM
  350. IS61LF51218D-9TQI - 512K X 18 Synchronous Flow-through Static RAM
  351. IS61LF51218J - 512Kx18
  352. IS61LF51218J-6.5B - 512Kx18
  353. IS61LF51218J-7.5B - 512Kx18
  354. IS61LF51218T - 512Kx18
  355. IS61LF51218T-10TQ - 512K X 18 Synchronous Flow-through Static RAM
  356. IS61LF51218T-10TQI - 512K X 18 Synchronous Flow-through Static RAM
  357. IS61LF51218T-6.5TQ - 512Kx18
  358. IS61LF51218T-7.5TQ - 512Kx18
  359. IS61LF51218T-7.5TQI - 512Kx18
  360. IS61LF51218T-8.5TQ - 512K X 18 Synchronous Flow-through Static RAM
  361. IS61LF51218T-8.5TQI - 512K X 18 Synchronous Flow-through Static RAM
  362. IS61LF51218T-9TQ - 512K X 18 Synchronous Flow-through Static RAM
  363. IS61LF51218T-9TQI - 512K X 18 Synchronous Flow-through Static RAM
  364. IS61LF51236A - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
  365. IS61LF51236A-6.5B2 - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  366. IS61LF51236A-6.5B2I - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  367. IS61LF51236A-6.5B3 - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  368. IS61LF51236A-6.5B3I - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  369. IS61LF51236A-6.5TQ - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  370. IS61LF51236A-6.5TQI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  371. IS61LF51236A-7.5TQ - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  372. IS61LF51236A-7.5TQI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
  373. IS61LF6432A - 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
  374. IS61LF6432A-8.5TQI - 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
  375. IS61LF6432A-8.5TQLI - 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
  376. IS61LF6436A - 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
  377. IS61LF6436A-8.5TQI - 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF6432A and IS61LF6436A are high-speed,low-power synchronous static RAM designed to provide aburstable, high-performance, memory. IS61LF6432A isorganized as 65,536 words by 32 bits. IS61LF6436A isorganized as 65,536 words by 36 bits. They are fabricatedwith ISSI\'s advanced CMOS technology. The device integratesa 2-bit burst counter, high-speed SRAM core, andhigh-drive capability outputs intoA single monolithic circuit.All synchronous inputs
  378. IS61LF6436A-8.5TQLI - 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF6432A and IS61LF6436A are high-speed,low-power synchronous static RAM designed to provide aburstable, high-performance, memory. IS61LF6432A isorganized as 65,536 words by 32 bits. IS61LF6436A isorganized as 65,536 words by 36 bits. They are fabricatedwith ISSI\'s advanced CMOS technology. The device integratesa 2-bit burst counter, high-speed SRAM core, andhigh-drive capability outputs intoA single monolithic circuit.All synchronous inputs
  379. IS61LP12832 - 128Kx32
  380. IS61LP12832-133B - 128Kx32
  381. IS61LP12832-133BI - 128Kx32
  382. IS61LP12832-133TQ - 128Kx32
  383. IS61LP12832-133TQI - 128Kx32
  384. IS61LP12832-166B - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  385. IS61LP12832-166BI - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  386. IS61LP12832-166TQ - 128Kx32
  387. IS61LP12832-166TQI - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  388. IS61LP12832-200B - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  389. IS61LP12832-200BI - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  390. IS61LP12832-200TQ - 128Kx32
  391. IS61LP12832-200TQI - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  392. IS61LP12832-5B - 128Kx32
  393. IS61LP12832-5BI - 128Kx32
  394. IS61LP12832-5TQ - 128Kx32
  395. IS61LP12832-5TQI - 128Kx32
  396. IS61LP12836 - 128Kx36
  397. IS61LP12836-133B - 128Kx36
  398. IS61LP12836-133BI - 128Kx36
  399. IS61LP12836-133TQ - 128Kx36
  400. IS61LP12836-133TQI - 128Kx36
  401. IS61LP12836-166B - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  402. IS61LP12836-166BI - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  403. IS61LP12836-166TQ - 128Kx36
  404. IS61LP12836-166TQI - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  405. IS61LP12836-200B - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  406. IS61LP12836-200BI - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  407. IS61LP12836-200TQ - 128Kx36
  408. IS61LP12836-200TQI - 128K X 32, 128K X 36 Synchronous Pipelined Static RAM
  409. IS61LP12836-5B - 128Kx36
  410. IS61LP12836-5BI - 128Kx36
  411. IS61LP12836-5TQ - 128Kx36
  412. IS61LP12836-5TQI - 128Kx36
  413. IS61LP6432A - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
  414. IS61LP6432A-133TQ - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
  415. IS61LP6432A-133TQI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
  416. IS61LP6432A-133TQLI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
  417. IS61LP6436A - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
  418. IS61LP6436A-133TQ - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
  419. IS61LP6436A-133TQI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
  420. IS61LP6436A-133TQLI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
  421. IS61LP6436A-166TQ - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
  422. IS61LP6436A-166TQI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
  423. IS61LP6436A-166TQLI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
  424. IS61LPD102418A - 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
  425. IS61LPD102418A-200B3 - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
  426. IS61LPD102418A-200TQ - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
  427. IS61LPD102418A-200TQI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
  428. IS61LPD102418A-250B3 - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
  429. IS61LPD102418A-250B3I - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
  430. IS61LPD102418A-250TQ - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
  431. IS61LPD102418A-250TQI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
  432. IS61LPD25632D - 256Kx32
  433. IS61LPD25632D-133TQ - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  434. IS61LPD25632D-133TQI - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  435. IS61LPD25632D-150TQ - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  436. IS61LPD25632D-166B - 256Kx32
  437. IS61LPD25632D-166BI - 256Kx32
  438. IS61LPD25632D-166TQ - 256Kx32
  439. IS61LPD25632D-166TQI - 256Kx32
  440. IS61LPD25632D-200B - 256Kx32
  441. IS61LPD25632D-200BI - 256Kx32
  442. IS61LPD25632D-200TQ - 256Kx32
  443. IS61LPD25632D-200TQI - 256Kx32
  444. IS61LPD25632D-225B - 256Kx32
  445. IS61LPD25632D-225BI - 256Kx32
  446. IS61LPD25632D-225TQ - 256Kx32
  447. IS61LPD25632D-225TQI - 256Kx32
  448. IS61LPD25632D-250B - 256Kx32
  449. IS61LPD25632D-250TQ - 256Kx32
  450. IS61LPD25632D-5TQ - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  451. IS61LPD25632D-5TQI - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  452. IS61LPD25632J - 256Kx32
  453. IS61LPD25632T - 256Kx32
  454. IS61LPD25632T-133TQ - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  455. IS61LPD25632T-133TQI - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  456. IS61LPD25632T-150TQ - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  457. IS61LPD25632T-166TQ - 256Kx32
  458. IS61LPD25632T-166TQI - 256Kx32
  459. IS61LPD25632T-200TQ - 256Kx32
  460. IS61LPD25632T-200TQI - 256Kx32
  461. IS61LPD25632T-225TQ - 256Kx32
  462. IS61LPD25632T-225TQI - 256Kx32
  463. IS61LPD25632T-250TQ - 256Kx32
  464. IS61LPD25632T-5TQ - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  465. IS61LPD25632T-5TQI - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  466. IS61LPD25636A - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
  467. IS61LPD25636A-200TQ - 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218Aare high-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory forcommunication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, andthe IS61LPD/VPD51218A is organized as 524,288 wordsby 18 bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-
  468. IS61LPD25636A-200TQI - 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218Aare high-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory forcommunication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, andthe IS61LPD/VPD51218A is organized as 524,288 wordsby 18 bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-
  469. IS61LPD25636A-250B2 - 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218Aare high-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory forcommunication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, andthe IS61LPD/VPD51218A is organized as 524,288 wordsby 18 bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-
  470. IS61LPD25636A-250B2I - 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218Aare high-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory forcommunication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, andthe IS61LPD/VPD51218A is organized as 524,288 wordsby 18 bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-
  471. IS61LPD25636A-250B3 - 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218Aare high-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory forcommunication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, andthe IS61LPD/VPD51218A is organized as 524,288 wordsby 18 bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-
  472. IS61LPD25636A-250B3I - 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218Aare high-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory forcommunication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, andthe IS61LPD/VPD51218A is organized as 524,288 wordsby 18 bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-
  473. IS61LPD25636A-250TQ - 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218Aare high-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory forcommunication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, andthe IS61LPD/VPD51218A is organized as 524,288 wordsby 18 bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-
  474. IS61LPD25636A-250TQI - 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD25636A and IS61LPD/VPD51218Aare high-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory forcommunication and networking applications. The IS61LPD/VPD25636A is organized as 262,144 words by 36 bits, andthe IS61LPD/VPD51218A is organized as 524,288 wordsby 18 bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-
  475. IS61LPD25636D - 256Kx36
  476. IS61LPD25636D-133B - 256Kx36
  477. IS61LPD25636D-133TQ - 256K X 36 Synchronous Pipeline, Double-cycle Deselect Static RAM
  478. IS61LPD25636D-133TQI - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  479. IS61LPD25636D-150B - 256Kx36
  480. IS61LPD25636D-150TQ - 256K X 36 Synchronous Pipeline, Double-cycle Deselect Static RAM
  481. IS61LPD25636D-166B - 256Kx36
  482. IS61LPD25636D-166BI - 256Kx36
  483. IS61LPD25636D-166TQ - 256Kx36
  484. IS61LPD25636D-166TQI - 256Kx36
  485. IS61LPD25636D-200B - 256Kx36
  486. IS61LPD25636D-200BI - 256Kx36
  487. IS61LPD25636D-200TQ - 256Kx36
  488. IS61LPD25636D-200TQI - 256Kx36
  489. IS61LPD25636D-225B - 256Kx36
  490. IS61LPD25636D-225BI - 256Kx36
  491. IS61LPD25636D-225TQ - 256Kx36
  492. IS61LPD25636D-225TQI - 256Kx36
  493. IS61LPD25636D-250B - 256Kx36
  494. IS61LPD25636D-250TQ - 256Kx36
  495. IS61LPD25636D-5TQ - 256K X 36 Synchronous Pipeline, Double-cycle Deselect Static RAM
  496. IS61LPD25636D-5TQI - 256K X 32 Synchronous Pipeline, Double-cycle Deselect Static RAM
  497. IS61LPD25636J - 256Kx36
  498. IS61LPD25636J-166BI - 256Kx36
  499. IS61LPD25636J-200B - 256Kx36
  500. IS61LPD25636J-200BI - 256Kx36
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