IS63WV1024BLL-12BI - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS63WV1024BLL-12BLI - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS63WV1024BLL-12HI - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS63WV1024BLL-12HLI - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS63WV1024BLL-12JI - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS63WV1024BLL-12JLI - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS64LV25616AL-12TLA2 - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV51216 - 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV51216-12TA3 - 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61/64LV51216 isA high-speed, 8M-bit staticRAM organized as 525,288 words by 16 bits. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuit designtechniques, yields high-performance and low powerconsumption devices.
IS64LV51216-12TLA3 - 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61/64LV51216 isA high-speed, 8M-bit staticRAM organized as 525,288 words by 16 bits. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuit designtechniques, yields high-performance and low powerconsumption devices.
IS64WV1024BLL-15HA3 - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS64WV1024BLL-15HLA3 - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS64WV1024BLL-15TA3 - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS64WV1024BLL-15TLA3 - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS63/64WV1024BLL isA very high-speed, lowpower, 131,072-word by 8-bit CMOS static RAM. TheIS63/64WV1024BLL is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit designtechniques, yields higher performance and low powerconsumption devices.
IS64WV12816BLL-15BA3 - 128K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV12816BLL and IS64WV12816BLL arehigh-speed, 2,097,152-bit static RAM organized as 131,072words by 16 bits. They are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldsaccess times as fast as 12 ns with low power consumption.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.
IS64WV12816BLL-15TA3 - 128K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV12816BLL and IS64WV12816BLL arehigh-speed, 2,097,152-bit static RAM organized as 131,072words by 16 bits. They are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldsaccess times as fast as 12 ns with low power consumption.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.
IS64WV12816BLL-15TLA3 - 128K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV12816BLL and IS64WV12816BLL arehigh-speed, 2,097,152-bit static RAM organized as 131,072words by 16 bits. They are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldsaccess times as fast as 12 ns with low power consumption.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.
IS64WV20488BLL-10MA3 - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS64WV20488BLL-10TA3 - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS64WV3216BLL-15BA3 - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV3216BLL isA high-speed, 524,288-bitstatic RAM organized as 32,768 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS64WV3216BLL-15BLA3 - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV3216BLL isA high-speed, 524,288-bitstatic RAM organized as 32,768 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS64WV3216BLL-15TA3 - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV3216BLL isA high-speed, 524,288-bitstatic RAM organized as 32,768 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS64WV3216BLL-15TLA3 - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV3216BLL isA high-speed, 524,288-bitstatic RAM organized as 32,768 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS64WV6416BLL-15BLA3 - 64K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV6416BLL isA high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS64WV6416BLL-15TA3 - 64K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV6416BLL isA high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS64WV6416BLL-15TLA3 - 64K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV6416BLL isA high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS65C256AL-25TA3 - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS65C256AL-25TLA3 - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS65C256AL-25UA3 - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS65C256AL-25ULA3 - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS65C256AL-45TA3 - 32K x 8 LOW POWER CMOS STATIC RAMThe ISSI IS62C256AL/IS65C256AL isA low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI\'s high-performance, low power CMOS technology.
IS65LV256AL-45TA3 - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS65LV256AL-45TLA3 - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS65LV256AL-45UA3 - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS62/65LV256AL isA very high-speed, lowpower, 32,768-word by 8-bit static RAM. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuitdesign techniques, yields access times as fast as 15 nsmaximum.
IS65WV12816ALL - 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816BLL - 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS65WV25616ALL - 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM