IS61LV51216-10MLI - 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61/64LV51216 isA high-speed, 8M-bit staticRAM organized as 525,288 words by 16 bits. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuit designtechniques, yields high-performance and low powerconsumption devices.
IS61LV6416-10BLI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-10I - 64Kx16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-10KLI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-10TL - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-10TLI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-12 - 64Kx16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-12I - 64Kx16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-12KL - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-15 - 64Kx16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-15I - 64Kx16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20 - 64Kx16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20B - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20BI - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20I - 64Kx16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20K - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20KI - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20T - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20TI - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-8KL - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-8TL - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416/L - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416L-8BI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416L-8KI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416L-8T - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416L-8TI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6424-10TQI - 64K X 24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-12 - 64Kx24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-12I - 64Kx24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-12TQI - 64K X 24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-15 - 64Kx24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-15I - 64Kx24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-15TQI - 64K X 24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-20 - 64Kx24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-20I - 64Kx24 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6424-9TQI - 64K X 24 High-speed CMOS Static RAM With 3.3V Supply
IS61NW6432-5 - 64Kx32 Pipeline NO WAIT State Bus SRAM
IS61NW6432-6 - 64Kx32 Pipeline NO WAIT State Bus SRAM
IS61NW6432-6PQ - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61NW6432-7 - 64Kx32 Pipeline NO WAIT State Bus SRAM
IS61NW6432-7PQ - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61NW6432-7TQ - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61NW6432-8 - 64Kx32 Pipeline NO WAIT State Bus SRAM
IS61NW6432-8PQ - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61NW6432-8TQ - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61QDB21M36 - QUAD (Burst of 2) Synchronous SRAMsThe 36Mb IS61QDB21Mx36 andIS61QDB22Mx18 are synchronous, high-performanceCMOS static random access memory(SRAM) devices. These SRAMs have separate I/Os,eliminating the need for high-speed bus turnaround.The rising edge of K clock initiates the read/writeoperation, and all internal operations are self-timed.Refer to the Timing Reference Diagram for TruthTable on page 8 forA description of the basic operationsof these SRAMs.
IS61QDB21M36-250M3 - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
IS61QDB21M36-250M3L - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
IS61QDB22M18 - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs