IIS41LV44002A-60JI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV44002A is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV44002A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV44002A i
IIS42S32200C1-7TI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IIS42S32400B-7BI - 128-MBIT SYNCHRONOUS DRAMISSI\'s 128Mb Synchronous DRAM achieves high-speeddata transfer using pipeline architecture. All inputs andoutputs signals refer to the rising edge of the clockinput.The 128Mb SDRAM is organized in 1Meg x 32 bit x 4Banks.
IIS61LF25618A-6.5TQ - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS24C04-5GA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C04-5PA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C04-5ZA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C04A - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C04A-3GLA3 - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C04A-3PLA3 - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C04A-3ZLA3 - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C08 - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08-2 - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08-2G - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08-2G - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08-2GI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08-2GI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08-5GA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08-5PA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08-5ZA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08A - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C08A-2DLI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C08A-2GLI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C08A-2PLI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C08A-2ZLI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C128-3P - 131,072-bit 2-WIRE SERIAL CMOS EEPROM
IS24C128-3PI - 131,072-bit 2-WIRE SERIAL CMOS EEPROM
IS24C128-3PL - 128K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C128 is an electrically erasable PROM devicethat uses the standard 2-wire interface forcommunications. The IS24C128 containsA memoryarray of 128K-bits (16,384 x 8), and is furthersubdivided into 256 pages of 64 bytes each for pagewritemode. This EEPROM is offered in operatingvoltages of 2.5V to 5.5V (IS24C128-3) to be compatiblewith most application voltages. ISSI designed theIS24C128 to beA low-cost and low-power 2-wireEEPROM solution. The devices are packaged in
IS24C128-3Z - 131,072-bit 2-WIRE SERIAL CMOS EEPROM
IS24C128-3ZI - 131,072-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16-3P - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16-3P - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16-3PA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16-3PI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16-3PI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16-5GA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16-5PA - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16A - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C16A-2DLI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C16A-2GLI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C16A-2PLI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C16A-2ZLI - 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C02A, IS24C04A, IS24C08A, andIS24C16A are electrically erasable PROMdevices that use the standard 2-wire interface forcommunications. The IS24C02A, IS24C04A,IS24C08A, and IS24C16A containA memory arrayof 2K-bits (256 x 8), 4K-bits (512 x 8), 8K-bits(1,024 x 8), and 16K-bits (2,048 x 8), respectively.Each device is organized into 16 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible w
IS24C16-G - 16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS24C16-GI - 16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS24C16-P - 16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS24C16-PI - 16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS24C256-2G - 262,144-bit 2-WIRE SERIAL CMOS EEPROM
IS24C256-2GI - 262,144-bit 2-WIRE SERIAL CMOS EEPROM
IS24C256-2GLI - 256K-bit2-WIRE SERIAL CMOS EEPROMThe IS24C256 is an electrically erasable PROM devicethat uses the standard 2-wire interface forcommunications. The IS24C256 containsA memoryarray of 256K-bits (32,768 x 8), and is furthersubdivided into 512 pages of 64 bytes each for Page-Write mode. This EEPROM is offered in wide operatingvoltages of 1.8V to 5.5V (IS24C256-2) and 2.5V to 5.5V(IS24C256-3) to be compatible with most applicationvoltages. ISSI designed the IS24C256 to beA low-costand low-power 2-wire EEPROM s
IS24C256-2P - 262,144-bit 2-WIRE SERIAL CMOS EEPROM
IS24C256-2PI - 262,144-bit 2-WIRE SERIAL CMOS EEPROM
IS24C256-2PLI - 256K-bit2-WIRE SERIAL CMOS EEPROMThe IS24C256 is an electrically erasable PROM devicethat uses the standard 2-wire interface forcommunications. The IS24C256 containsA memoryarray of 256K-bits (32,768 x 8), and is furthersubdivided into 512 pages of 64 bytes each for Page-Write mode. This EEPROM is offered in wide operatingvoltages of 1.8V to 5.5V (IS24C256-2) and 2.5V to 5.5V(IS24C256-3) to be compatible with most applicationvoltages. ISSI designed the IS24C256 to beA low-costand low-power 2-wire EEPROM s
IS24C256-2Z - 262,144-bit 2-WIRE SERIAL CMOS EEPROM
IS24C256-2ZI - 262,144-bit 2-WIRE SERIAL CMOS EEPROM
IS24C256-2ZLI - 256K-bit2-WIRE SERIAL CMOS EEPROMThe IS24C256 is an electrically erasable PROM devicethat uses the standard 2-wire interface forcommunications. The IS24C256 containsA memoryarray of 256K-bits (32,768 x 8), and is furthersubdivided into 512 pages of 64 bytes each for Page-Write mode. This EEPROM is offered in wide operatingvoltages of 1.8V to 5.5V (IS24C256-2) and 2.5V to 5.5V(IS24C256-3) to be compatible with most applicationvoltages. ISSI designed the IS24C256 to beA low-costand low-power 2-wire EEPROM s
IS24C32A - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C32A-2GI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32A-2GLI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32A-2PI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32A-2PLI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32A-2SLI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32A-2ZI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32A-2ZLI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32B - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C32B-2GI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32B-2GLI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32B-2PI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32B-2PLI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32B-2ZI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C32B-2ZLI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C52 - 2k-bit 2-wire Serial Cmos Eeprom With Permanent Write-protection
IS24C52-2G - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-2GI - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-2S - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-2SI - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-2Z - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-2ZI - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-3G - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-3GI - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-3S - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-3SI - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-3Z - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C52-3ZI - 2k-bit 2-WIRE SERIAL CMOS EEPROM with Permanent Write-Protection
IS24C64 - 65,536-bit/32,768-bit 2-WIRE SERIAL CMOS EEPROM
IS24C64-2 - 65,536-bit/32,768-bit 2-WIRE SERIAL CMOS EEPROM
IS24C64A - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROM
IS24C64A-2GI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C64A-2PLI - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROMThe IS24C32A/B and IS24C64A/B are electricallyerasable PROM devices that use the standard 2-wire interface for communications. The IS24C32A/Band IS24C64A/B containA memory array of 32Kbits(4K x 8) and 64K-bits (8K x 8), respectively.Each device is organized into 32 byte pages forpage write mode.This EEPROM operates inA wide voltage range of1.8V to 5.5V to be compatible with most applicationvoltages. ISSI designed this device family to be apractical, low-power 2-wir
IS24C64B - 64K-bit/32K-bit 2-WIRE SERIAL CMOS EEPROM
IS24L128 - 128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
IS24L256 - 128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
IS24L256-2PI - 128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
IS24L256-2PLI - 128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
IS25C01 - 1K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C01-2GI - 1K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C01-2PI - 1K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C01-2ZI - 1K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C02 - 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C02-2GI - 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C02-2PI - 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C04 - 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C08 - 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C08-2GI - 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C08-2GLI - 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROMThe IS25C08 and IS25C16 are electrically erasablePROM devices that use the Serial Peripheral Interface(SPI) for communications. The IS25C08 is 8Kbit(1024x 8) and the IS25C16 is 16Kbit (2048 x 8). TheIS25C08/16 EEPROMs are offered in wide operatingvoltages of 1.8V to 5.5V and 2.5V to 5.5V compatiblewith most application voltages. ISSI designed theIS25C08/16 to be an efficient SPI EEPROM solution.The devices are packaged in 8-pin PDIP, 8-pin SOIC,and 8-pin T
IS25C08-2PI - 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
IS25C08-2PLI - 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROMThe IS25C08 and IS25C16 are electrically erasablePROM devices that use the Serial Peripheral Interface(SPI) for communications. The IS25C08 is 8Kbit(1024x 8) and the IS25C16 is 16Kbit (2048 x 8). TheIS25C08/16 EEPROMs are offered in wide operatingvoltages of 1.8V to 5.5V and 2.5V to 5.5V compatiblewith most application voltages. ISSI designed theIS25C08/16 to be an efficient SPI EEPROM solution.The devices are packaged in 8-pin PDIP, 8-pin SOIC,and 8-pin T
IS25C08-2ZI - 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROMThe IS25C08 and IS25C16 are electrically erasablePROM devices that use the Serial Peripheral Interface(SPI) for communications. The IS25C08 is 8Kbit(1024x 8) and the IS25C16 is 16Kbit (2048 x 8). TheIS25C08/16 EEPROMs are offered in wide operatingvoltages of 1.8V to 5.5V and 2.5V to 5.5V compatiblewith most application voltages. ISSI designed theIS25C08/16 to be an efficient SPI EEPROM solution.The devices are packaged in 8-pin PDIP, 8-pin SOIC,and 8-pin T
IS25C08-2ZLI - 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROMThe IS25C08 and IS25C16 are electrically erasablePROM devices that use the Serial Peripheral Interface(SPI) for communications. The IS25C08 is 8Kbit(1024x 8) and the IS25C16 is 16Kbit (2048 x 8). TheIS25C08/16 EEPROMs are offered in wide operatingvoltages of 1.8V to 5.5V and 2.5V to 5.5V compatiblewith most application voltages. ISSI designed theIS25C08/16 to be an efficient SPI EEPROM solution.The devices are packaged in 8-pin PDIP, 8-pin SOIC,and 8-pin T
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