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Components list, symbol «K», page 2

  1. K590 Неопределенные - AK Series VERTICAL
  2. K590 Неопределенные - MOS-Intergrated Microcircuits
  3. K590KH1 Неопределенные - MOS-Intergrated Microcircuits
  4. K590KH2 Неопределенные - MOS-Intergrated Microcircuits
  5. K5 Неопределенные - KS Series KEY SWITCHES
  6. K50S Неопределенные - 2,500V - 10,000V Rectifiers
  7. K6 Неопределенные - KS Series KEY SWITCHES
  8. K596 Jiangsu - Si N-CHANNEL JUNCTION FET
  9. K596-TO-92S Jiangsu - Si N-channel Junction Fet
  10. K510 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  11. K511 Knox - Low Level Zener Diodes Sharp Knee, Low Impedance
  12. K561 Knox - LOW LEVEL ZENER DIODES SHARP KNEE, LOW IMPEDANCE
  13. K681 Knox - LOW LEVEL ZENER DIODES SHARP KNEE, LOW IMPEDANCE
  14. K621 Knox - LOW LEVEL ZENER DIODES SHARP KNEE, LOW IMPEDANCE
  15. K5610 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  16. K5611 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  17. K5620 Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  18. K5621 Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  19. K5630 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  20. K5631 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  21. K5640 Kodenshi - Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting)
  22. K5641 Kodenshi - Photocoupler(these Photocouplers Cosist Of Two Gallium Arsenide Infrared Emitting)
  23. K4N25 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  24. K4N25A Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  25. K4N25G Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  26. K4N25H Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  27. K4N26 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  28. K4N27 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  29. K4N28 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  30. K4N29 Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  31. K4N29A Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  32. K4N30 Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  33. K4N31 Kodenshi - Photocoupler (These Photocouplers Cosist ofA Gallium Arsenide Infrared Emitting)
  34. K4N32 Kodenshi - Photocoupler (These Photocouplers Cosist ofA Gallium Arsenide Infrared Emitting)
  35. K4N33 Kodenshi - Photocoupler (These Photocouplers Cosist ofA Gallium Arsenide Infrared Emitting)
  36. K4N35 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  37. K4N36 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  38. K4N37 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  39. K4N38 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  40. K4N38A Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  41. K504100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  42. K504100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  43. K504100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  44. K504100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  45. K504100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  46. K504100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  47. K504100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  48. K504100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  49. K504100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  50. K504100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  51. K504100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  52. K504100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  53. K504100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  54. K504100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  55. K504100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  56. K504100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  57. K504100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  58. K504100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  59. K504100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  60. K504100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  61. K504100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  62. K504100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  63. K504100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  64. K504100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  65. K504120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  66. K504120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  67. K504120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  68. K504120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  69. K504120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  70. K504120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  71. K504120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  72. K504120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  73. K504120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  74. K504120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  75. K504120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  76. K504120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  77. K504120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  78. K504120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  79. K504120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  80. K504120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  81. K504120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  82. K504120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  83. K504120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  84. K504120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  85. K504120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  86. K504120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  87. K504120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  88. K504120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  89. K504160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  90. K504160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  91. K504160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  92. K504160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  93. K504160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  94. K504160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  95. K504160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  96. K504160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  97. K504160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  98. K504160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  99. K504160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  100. K504160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  101. K504160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  102. K504160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  103. K504160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  104. K504160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  105. K504160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  106. K504160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  107. K504160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  108. K504160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  109. K504160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  110. K504160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  111. K504160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  112. K504160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  113. K50420B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  114. K50420B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  115. K50420C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  116. K50420C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  117. K50420D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  118. K50420D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  119. K50420H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  120. K50420H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  121. K50420M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  122. K50420M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  123. K50420N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  124. K50420N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  125. K50420Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  126. K50420Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  127. K50420V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  128. K50420V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  129. K50420W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  130. K50420W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  131. K50420X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  132. K50420X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  133. K50420Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  134. K50420Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  135. K50420Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  136. K50420Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  137. K50440B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  138. K50440B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  139. K50440C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  140. K50440C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  141. K50440D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  142. K50440D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  143. K50440H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  144. K50440H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  145. K50440M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  146. K50440M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  147. K50440N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  148. K50440N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  149. K50440Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  150. K50440Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  151. K50440V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  152. K50440V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  153. K50440W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  154. K50440W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  155. K50440X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  156. K50440X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  157. K50440Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  158. K50440Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  159. K50440Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  160. K50440Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  161. K50460B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  162. K50460B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  163. K50460C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  164. K50460C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  165. K50460D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  166. K50460D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  167. K50460H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  168. K50460H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  169. K50460M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  170. K50460M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  171. K50460N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  172. K50460N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  173. K50460Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  174. K50460Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  175. K50460V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  176. K50460V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  177. K50460W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  178. K50460W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  179. K50460X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  180. K50460X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  181. K50460Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  182. K50460Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  183. K50460Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  184. K50460Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  185. K50480B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  186. K50480B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  187. K50480C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  188. K50480C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  189. K50480D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  190. K50480D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  191. K50480H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  192. K50480H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  193. K50480M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  194. K50480M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  195. K50480N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  196. K50480N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  197. K50480Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  198. K50480Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  199. K50480V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  200. K50480V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  201. K50480W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  202. K50480W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  203. K50480X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  204. K50480X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  205. K50480Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  206. K50480Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  207. K50480Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  208. K50480Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  209. K5-BW1 Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  210. K5-BW2 Mini-Circuits - KIT FXD ATTEN / SMA
  211. K5-BW2+ Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  212. K5N-BW3 Mini-Circuits - KIT FXD ATTEN / N
  213. K5N-BW3+ Mini-Circuits - TERM / N / RoHS
  214. K4-LFCN+ Mini-Circuits - KIT FILTER / SURF MT/T&R/ RoHS
  215. K5-LFCN+ Mini-Circuits - KIT FILTER / SURF MT/T&R/ RoHS
  216. K5-M Mitsumi - LC Filters For Video
  217. K4-R Mitsumi - LC Filters For Video
  218. K4S160822D Samsung - 2mx8 Sdram 1m X 8bit X 2 Banks Synchronous Dram Lvttl
  219. K4S160822DT-10 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  220. K4S160822DT-7 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  221. K4S160822DT-8 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  222. K4S160822DT-G/F10 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  223. K4S160822DT-G/F7 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  224. K4S160822DT-G/F8 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  225. K4S160822DT-G/FH Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  226. K4S160822DT-G/FL Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  227. K4S160822DT-H Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  228. K4S160822DT-L Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  229. K4S161622D Samsung - 512k X 16bit X 2 Banks Synchronous Dram
  230. K4S161622D-TC/L10 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  231. K4S161622D-TC/L55 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  232. K4S161622D-TC/L60 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  233. K4S161622D-TC/L70 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  234. K4S161622D-TC/L80 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  235. K4S161622D-TE Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  236. K4S161622D-TI/E Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  237. K4S161622D-TI/E10 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  238. K4S161622D-TI/E50 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  239. K4S161622D-TI/E55 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  240. K4S161622D-TI/E60 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  241. K4S161622D-TI/E70 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  242. K4S161622D-TI/E80 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  243. K4S161622E Samsung - 1M x 16 SDRAM
  244. K4S161622E-TC10 Samsung - 1M x 16 SDRAM
  245. K4S161622E-TC55 Samsung - 1M x 16 SDRAM
  246. K4S161622E-TC60 Samsung - 1M x 16 SDRAM
  247. K4S161622E-TC70 Samsung - 1M x 16 SDRAM
  248. K4S161622E-TC80 Samsung - 1M x 16 SDRAM
  249. K4S161622H Samsung - 16mb H-die Sdram Specification
  250. K4S161622H-TC10 Samsung - K4S161622H 512K X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C ; Production Status = Under Development ; Comments = -
  251. K4S161622H-TC55 Samsung - 16Mb H-die SDRAM Specification
  252. K4S161622H-TC60 Samsung - 16Mb H-die SDRAM Specification
  253. K4S161622H-TC70 Samsung - 16Mb H-die SDRAM Specification
  254. K4S161622H-TC80 Samsung - 16Mb H-die SDRAM Specification
  255. K4S1G0632D Samsung - st.32M x 4Bit x 4 Banks SDRAMThe K4S1G0632D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 67,108,864 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  256. K4S1G0632D-UC75 Samsung - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  257. K4S1G0632MT Samsung - K4S1G0632MT 64M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 256Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  258. K4S1G0732B Samsung - SDRAM stacked 1Gb B-die
  259. K4S1G0732B-TC75 Samsung - Sdram Stacked 1gb B-die
  260. K4S1G0732D Samsung - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  261. K4S1G0732D-UC75 Samsung - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  262. K4S280432A Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
  263. K4S280432A-TC/L10 Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  264. K4S280432A-TC/L1H Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  265. K4S280432A-TC/L1L Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  266. K4S280432A-TC/L75 Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  267. K4S280432A-TC/L80 Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  268. K4S280432B Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
  269. K4S280432B-TC/L10 Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  270. K4S280432B-TC/L1H Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  271. K4S280432B-TC/L1L Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  272. K4S280432B-TC/L75 Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  273. K4S280432B-TC/L80 Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  274. K4S280432C Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
  275. K4S280432C-TC/L1H Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
  276. K4S280432C-TC/L1L Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
  277. K4S280432C-TC/L75 Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
  278. K4S280432D Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  279. K4S280432D-TB1H Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  280. K4S280432D-TB1L Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  281. K4S280432D-TB75 Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  282. K4S280432D-TB7C Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  283. K4S280432D-TC/L1H Samsung - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  284. K4S280432D-TC/L1L Samsung - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  285. K4S280432D-TC/L75 Samsung - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  286. K4S280432D-TC/L7C Samsung - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  287. K4S280432E Samsung - 128Mb E-die SDRAM Specification
  288. K4S280432E-TC75 Samsung - 128mb E-die Sdram Specification
  289. K4S280432E-TCL75 Samsung - K4S280432E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  290. K4S280432E-TL75 Samsung - 128Mb E-die SDRAM Specification
  291. K4S280432F Samsung - 128Mb F-die SDRAM Specification
  292. K4S280432F-TC75 Samsung - 128mb F-die Sdram Specification
  293. K4S280432F-TC75 Samsung - 128Mb F-die SDRAM Specification
  294. K4S280432F-TCL75 Samsung - 128Mb F-die SDRAM Specification
  295. K4S280432F-TL75 Samsung - 128mb F-die Sdram Specification
  296. K4S280432F-UC Samsung - 128mb F-die Sdram Specification 54 Tsop-ii With Pb-free (rohs Compliant)
  297. K4S280432F-UC75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  298. K4S280432F-UL75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  299. K4S280432M Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
  300. K4S280432M-TC/L10 Samsung - K4S280432M 8Mx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  301. K4S280432M-TC/L1H Samsung - K4S280432M 8Mx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  302. K4S280432M-TC/L1L Samsung - K4S280432M 8Mx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  303. K4S280432M-TC/L80 Samsung - K4S280432M 8Mx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  304. K4S280832A Samsung - 128mbit Sdram 4m X 8bit X 4 Banks Synchronous Dram Lvttl
  305. K4S280832A-TC/L10 Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  306. K4S280832A-TC/L1H Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  307. K4S280832A-TC/L1L Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  308. K4S280832A-TC/L75 Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  309. K4S280832A-TC/L80 Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  310. K4S280832B Samsung - 4m X 8bit X 4 Banks Sychronous Dram
  311. K4S280832B-TC10 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  312. K4S280832B-TC1H Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  313. K4S280832B-TC1L Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  314. K4S280832B-TC75 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  315. K4S280832B-TC80 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  316. K4S280832B-TCL10 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  317. K4S280832B-TCL1H Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  318. K4S280832B-TCL1L Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  319. K4S280832B-TCL75 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  320. K4S280832B-TCL80 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  321. K4S280832B-TL10 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  322. K4S280832B-TL1H Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  323. K4S280832B-TL1L Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  324. K4S280832B-TL75 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  325. K4S280832B-TL80 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  326. K4S280832C Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  327. K4S280832C-N Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  328. K4S280832C-NC/L1H Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  329. K4S280832C-NC/L1L Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  330. K4S280832C-NC/L75 Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  331. K4S280832C-TC/L1H Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  332. K4S280832C-TC/L1L Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  333. K4S280832C-TC/L75 Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  334. K4S280832D Samsung - 128mbit Sdram (4m X 8bit X 4 Banks Synchronous Dram)
  335. K4S280832D-TC/L1H Samsung - K4S280832D 4M X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  336. K4S280832D-TC/L1L Samsung - K4S280832D 4M X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  337. K4S280832D-TC/L75 Samsung - K4S280832D 4M X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  338. K4S280832D-TC/L7C Samsung - K4S280832D 4M X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  339. K4S280832E Samsung - K4S280832E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  340. K4S280832E-TC75 Samsung - 128Mb E-die SDRAM Specification
  341. K4S280832E-TCL75 Samsung - K4S280832E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  342. K4S280832E-TL75 Samsung - 128Mb E-die SDRAM Specification
  343. K4S280832F-TC75 Samsung - 128Mb F-die SDRAM Specification
  344. K4S280832F-TC75 Samsung - 128Mb F-die SDRAM Specification
  345. K4S280832F-TCL75 Samsung - 128Mb F-die SDRAM Specification
  346. K4S280832F-TL75 Samsung - 128Mb F-die SDRAM Specification
  347. K4S280832F-UC75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  348. K4S280832F-UL75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  349. K4S280832M Samsung - 128mbit Sdram 4m X 8bit X 4 Banks Synchronous Dram Lvttl
  350. K4S280832M-TC/L10 Samsung - K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  351. K4S280832M-TC/L1H Samsung - K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  352. K4S280832M-TC/L1L Samsung - K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  353. K4S280832M-TC/L80 Samsung - K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  354. K4S281632B Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  355. K4S281632B-N Samsung - 2m X 16bit X 4 Banks Synchronous Dram In Stsop
  356. K4S281632B-NC/L1H Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  357. K4S281632B-NC/L1L Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  358. K4S281632B-TC10 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  359. K4S281632B-TC1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  360. K4S281632B-TC1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  361. K4S281632B-TC75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  362. K4S281632B-TC80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  363. K4S281632B-TC/L10 Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  364. K4S281632B-TC/L1H Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  365. K4S281632B-TC/L1L Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  366. K4S281632B-TC/L75 Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  367. K4S281632B-TC/L80 Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  368. K4S281632B-TL10 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  369. K4S281632B-TL1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  370. K4S281632B-TL1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  371. K4S281632B-TL75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  372. K4S281632B-TL80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  373. K4S281632C Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  374. K4S281632C Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  375. K4S281632C-TC1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  376. K4S281632C-TC1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  377. K4S281632C-TC75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  378. K4S281632C-TC/L1H Samsung - K4S281632C 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  379. K4S281632C-TC/L1L Samsung - K4S281632C 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  380. K4S281632C-TC/L75 Samsung - K4S281632C 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  381. K4S281632C-TI Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  382. K4S281632C-TI1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  383. K4S281632C-TI1L Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  384. K4S281632C-TI75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  385. K4S281632C-TI/P1H Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous DRAM LVTTL
  386. K4S281632C-TI/P1L Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous DRAM LVTTL
  387. K4S281632C-TI/P75 Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous DRAM LVTTL
  388. K4S281632C-TL1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  389. K4S281632C-TL1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  390. K4S281632C-TL75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  391. K4S281632C-TP Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  392. K4S281632C-TP1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  393. K4S281632C-TP1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  394. K4S281632C-TP75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  395. K4S281632D Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  396. K4S281632D-L1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  397. K4S281632D-L1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  398. K4S281632D-L55 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  399. K4S281632D-L60 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  400. K4S281632D-L75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  401. K4S281632D-L7C Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  402. K4S281632D-NC1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  403. K4S281632D-NC60 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  404. K4S281632D-NC75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  405. K4S281632D-NC7C Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  406. K4S281632D-NL1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  407. K4S281632D-NL60 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  408. K4S281632D-NL75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  409. K4S281632D-NL7C Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  410. K4S281632D-TB1H Samsung - K4S281632D 2Mx16Bitx4 Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = ICC6=450uA
  411. K4S281632D-TB1L Samsung - K4S281632D 2Mx16Bitx4 Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = ICC6=450uA
  412. K4S281632D-TB75 Samsung - K4S281632D 2Mx16Bitx4 Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = ICC6=450uA
  413. K4S281632D-TB7C Samsung - K4S281632D 2Mx16Bitx4 Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = ICC6=450uA
  414. K4S281632D-TC Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  415. K4S281632D-TC75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  416. K4S281632D-TC/L1H Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  417. K4S281632D-TC/L1L Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  418. K4S281632D-TC/L55 Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  419. K4S281632D-TC/L60 Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  420. K4S281632D-TC/L75 Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  421. K4S281632D-TC/L7C Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  422. K4S281632D-TL75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  423. K4S281632E Samsung - K4S281632E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  424. K4S281632E-TC60 Samsung - 128Mb E-die SDRAM Specification
  425. K4S281632E-TC75 Samsung - 128Mb E-die SDRAM Specification
  426. K4S281632E-TCL60 Samsung - 128mb E-die Sdram Specification
  427. K4S281632E-TCL60/75 Samsung - K4S281632E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  428. K4S281632E-TCL75 Samsung - 128mb E-die Sdram Specification
  429. K4S281632E-TL60 Samsung - 128Mb E-die SDRAM Specification
  430. K4S281632E-TL75 Samsung - 128Mb E-die SDRAM Specification
  431. K4S281632F-TC60 Samsung - 128Mb F-die SDRAM Specification
  432. K4S281632F-TC60 Samsung - 128Mb F-die SDRAM Specification
  433. K4S281632F-TC75 Samsung - 128Mb F-die SDRAM Specification
  434. K4S281632F-TC75 Samsung - 128Mb F-die SDRAM Specification
  435. K4S281632F-TCL60 Samsung - 128Mb F-die SDRAM Specification
  436. K4S281632F-TCL75 Samsung - 128Mb F-die SDRAM Specification
  437. K4S281632F-TL60 Samsung - 128Mb F-die SDRAM Specification
  438. K4S281632F-TL75 Samsung - 128Mb F-die SDRAM Specification
  439. K4S281632F-UC60 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  440. K4S281632F-UC75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  441. K4S281632F-UL60 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  442. K4S281632F-UL75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  443. K4S281632M Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  444. K4S281632M-L10 Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  445. K4S281632M-L1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  446. K4S281632M-L1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  447. K4S281632M-L80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  448. K4S281632M-TC Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  449. K4S281632M-TC10 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  450. K4S281632M-TC1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  451. K4S281632M-TC1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  452. K4S281632M-TC80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  453. K4S281632M-TC/L10 Samsung - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  454. K4S281632M-TC/L1H Samsung - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  455. K4S281632M-TC/L1L Samsung - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  456. K4S281632M-TC/L80 Samsung - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  457. K4S281632M-TL Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  458. K4S281632M-TL10 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  459. K4S281632M-TL1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  460. K4S281632M-TL1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  461. K4S281632M-TL80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  462. K4S281633D Samsung - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
  463. K4S281633D-N1H Samsung - 8Mx16 SDRAM 54CSP
  464. K4S281633D-N1L Samsung - 8Mx16 SDRAM 54CSP
  465. K4S281633D-N75 Samsung - 8mx16 Sdram 54csp
  466. K4S281633D-RBL/N/P Samsung - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
  467. K4S281633D-RBL/N/P1H Samsung - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
  468. K4S281633D-RBL/N/P75 Samsung - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
  469. K4S281633D-RL Samsung - 8Mx16 SDRAM 54CSP
  470. K4S28163LD Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  471. K4S28163LD-RBL/N/P Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  472. K4S28163LD-RBL/N/P15 Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  473. K4S28163LD-RBL/N/P1H Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  474. K4S28163LD-RBL/N/P1L Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  475. K4S28163LD-RBL/N/P75 Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  476. K4S283232E Samsung - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  477. K4S283232E-T Samsung - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  478. K4S283232E-TC/L1L100MHzCL3 Samsung - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  479. K4S283232E-TC/L60166MHzCL3 Samsung - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  480. K4S283233F Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  481. K4S283233F-C Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  482. K4S283233F-EE/N/I/P1H Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  483. K4S283233F-EE/N/I/P1L Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  484. K4S283233F-EE/N/I/P75 Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  485. K4S283233F-F1H Samsung - 1m X 32bit X 4 Banks Mobile Sdram In 90fbga
  486. K4S283233F-F1L Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  487. K4S283233F-F60 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  488. K4S283233F-F75 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  489. K4S283233F-FE Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  490. K4S283233F-FHE Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  491. K4S283233F-G Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  492. K4S283233F-L Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  493. K4S283233F-MEE/N/I/P Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  494. K4S283233F-ME/N/I/P1H Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  495. K4S283233F-ME/N/I/P1L Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  496. K4S283233F-ME/N/I/P75 Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  497. K4S283233F-N Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  498. K4S283234F Samsung -
  499. K4S28323LF Samsung - 1m X 32bit X 4 Banks Mobile Sdram In 90fbga
  500. K4S28323LF-ER1H Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  501. K4S28323LF-F Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  502. K4S28323LF-F(H)E/N/S/C/L/R1H Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  503. K4S28323LF-F(H)E/N/S/C/L/R1L Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  504. K4S28323LF-F(H)E/N/S/C/L/R60 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  505. K4S28323LF-F(H)E/N/S/C/L/R75 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  506. K4S28323LF-FR60 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  507. K4S28323LF-HER75 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  508. K4S28323LF-NR1L Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  509. K4S510432B Samsung - K4S510432B 32M X 4Bit X 4 Banks Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP ; Power = C,l ; Production Status = Mass Production ; Comments = Mono
  510. K4S510432B-CL75 Samsung - 512Mb B-die SDRAM Specification
  511. K4S510432B-TC Samsung - 512mb B-die Sdram Specification
  512. K4S510432B-TC75 Samsung - 512Mb B-die SDRAM Specification
  513. K4S510432B-TCL75 Samsung - 512Mb B-die SDRAM Specification
  514. K4S510432B-UC Samsung - 512Mb B-die SDRAM Specification
  515. K4S510432B-UC75 Samsung - 512mb B-die Sdram Specification
  516. K4S510432D Samsung - 2M x 4Bit x 4 Banks SDRAMhe K4S510432D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  517. K4S510432D-UC(L)75 Samsung - 2M x 4Bit x 4 Banks SDRAMhe K4S510432D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  518. K4S510432M Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  519. K4S510432M-TC1H Samsung - 512mbit Sdram 32m X 4bit X 4 Banks Synchronous Dram Lvttl
  520. K4S510432M-TC1L Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  521. K4S510432M-TC75 Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  522. K4S510432M-TC/TL1H Samsung - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  523. K4S510432M-TC/TL1L Samsung - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  524. K4S510432M-TC/TL75 Samsung - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  525. K4S510432M-TL1H Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  526. K4S510432M-TL1L Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  527. K4S510432M-TL75 Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  528. K4S510632B Samsung -
  529. K4S510632C Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  530. K4S510632C-TC/L1H Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  531. K4S510632C-TC/L1L Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  532. K4S510632C-TC/L75 Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  533. K4S510632C-TC/L7C Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  534. K4S510632D Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  535. K4S510632D-TC/L1H Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  536. K4S510632D-TC/L1L Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  537. K4S510632D-TC/L75 Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  538. K4S510632D-TC/L7C Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  539. K4S510732B Samsung - K4S510732B 16Mx8Bitx4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = Stacked
  540. K4S510732B-TC/L1H Samsung - K4S510732B 16Mx8Bitx4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = Stacked
  541. K4S510732B-TC/L1L Samsung - K4S510732B 16Mx8Bitx4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = Stacked
  542. K4S510732B-TC/L75 Samsung - K4S510732B 16Mx8Bitx4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = Stacked
  543. K4S510732C Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  544. K4S510732C-TC/L1H Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  545. K4S510732C-TC/L1L Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  546. K4S510732C-TC/L75 Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  547. K4S510732C-TC/L7C Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  548. K4S510832B Samsung - K4S510832B 16M X 8Bit X 4 Banks Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP ; Power = C,l ; Production Status = Mass Production ; Comments = Mono
  549. K4S510832B-CL75 Samsung - 512Mb B-die SDRAM Specification
  550. K4S510832B-TC75 Samsung - 512Mb B-die SDRAM Specification
  551. K4S510832B-TCL75 Samsung - 512Mb B-die SDRAM Specification
  552. K4S510832B-UC75 Samsung - 512Mb B-die SDRAM Specification
  553. K4S510832C Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  554. K4S510832C-KC/L1H Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  555. K4S510832C-KC/L1L Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  556. K4S510832C-KC/L75 Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  557. K4S510832C-KC/L7C Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  558. K4S510832D Samsung - 16M x 8Bit x 4 Banks SDRAMThe K4S510832D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  559. K4S510832D-UC(L)75 Samsung - 16M x 8Bit x 4 Banks SDRAMThe K4S510832D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  560. K4S510832M Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  561. K4S510832M-TC1H Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  562. K4S510832M-TC1L Samsung - 16m X 8bit X 4 Banks Synchronous Dram Lvttl
  563. K4S510832M-TC75 Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  564. K4S510832M-TC/TL1H Samsung - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  565. K4S510832M-TC/TL1L Samsung - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  566. K4S510832M-TC/TL75 Samsung - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  567. K4S510832M-TL1H Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  568. K4S510832M-TL1L Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  569. K4S510832M-TL75 Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  570. K4S511533C Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  571. K4S511533C-YL/N/P Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  572. K4S511533C-YL/N/P1H Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  573. K4S511533C-YL/N/P1L Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  574. K4S511533C-YL/N/P80 Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  575. K4S511533F Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  576. K4S511533F-F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  577. K4S511533F-F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  578. K4S511533F-F75 Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  579. K4S511533F-L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  580. K4S511533F-Y(P)C/L/F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  581. K4S511533F-Y(P)C/L/F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  582. K4S511533F-Y(P)C/L/F75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  583. K4S511533F-YC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  584. K4S51153LC Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  585. K4S51153LC-YG/S Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  586. K4S51153LC-YG/S15 Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  587. K4S51153LC-YG/S1H Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  588. K4S51153LC-YXXX Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  589. K4S51153LF Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  590. K4S51153LF-Y(P)C/L/F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  591. K4S51153LF-Y(P)C/L/F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  592. K4S51153LF-Y(P)C/L/F75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  593. K4S51153PF Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  594. K4S51153PF-YF Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  595. K4S51153PF-YF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  596. K4S51153PF-YF75 Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  597. K4S51153PF-YF90 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  598. K4S51153PF-YPF Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  599. K4S51153PF-YPF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  600. K4S511632B Samsung - K4S511632B 8M X 16Bit X 4 Banks Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP ; Power = C,l ; Production Status = Mass Production ; Comments = Mono
  601. K4S511632B-CL75 Samsung - 512Mb B-die SDRAM Specification
  602. K4S511632B-TC75 Samsung - 512Mb B-die SDRAM Specification
  603. K4S511632B-TCL75 Samsung - 512Mb B-die SDRAM Specification
  604. K4S511632B-UC75 Samsung - 512Mb B-die SDRAM Specification
  605. K4S511632C Samsung - DDP 512Mbit SDRAM
  606. K4S511632C-KC Samsung - Ddp 512mbit Sdram
  607. K4S511632C-KC/L1H Samsung - K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  608. K4S511632C-KC/L1L Samsung - K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  609. K4S511632C-KC/L75 Samsung - K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  610. K4S511632C-KC/L7C Samsung - K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  611. K4S511632C-L1H Samsung - DDP 512Mbit SDRAM
  612. K4S511632C-L1L Samsung - DDP 512Mbit SDRAM
  613. K4S511632C-L75 Samsung - DDP 512Mbit SDRAM
  614. K4S511632C-L7C Samsung - DDP 512Mbit SDRAM
  615. K4S511632D Samsung - DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
  616. K4S511632D-KC Samsung - Ddp 512mbit Sdram 8m X 16bit X 4 Banks Synchronous Dram Lvttl
  617. K4S511632D-KC/L1H Samsung - K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  618. K4S511632D-KC/L1L Samsung - K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  619. K4S511632D-KC/L75 Samsung - K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  620. K4S511632D-KC/L7C Samsung - K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  621. K4S511632M Samsung - 512Mbit SDRAM
  622. K4S511632M-TC Samsung - 512mbit Sdram
  623. K4S511632M-TC/TL1H Samsung - K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Prodution ; Comments = Monolithic
  624. K4S511632M-TC/TL1L Samsung - K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Prodution ; Comments = Monolithic
  625. K4S511632M-TC/TL75 Samsung - K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Prodution ; Comments = Monolithic
  626. K4S511632M-TL1H Samsung - 512Mbit SDRAM
  627. K4S511632M-TL1L Samsung - 512Mbit SDRAM
  628. K4S511632M-TL75 Samsung - 512Mbit SDRAM
  629. K4S511633C Samsung - 32Mx16 Mobile SDRAM 54CSP 1/CS
  630. K4S511633C-N Samsung - 32mx16 Mobile Sdram 54csp 1/cs
  631. K4S511633C-P Samsung - 32Mx16 Mobile SDRAM 54CSP 1/CS
  632. K4S511633C-XXXX Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  633. K4S511633C-YL Samsung - 32Mx16 Mobile SDRAM 54CSP 1/CS
  634. K4S511633C-YL/N1H Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  635. K4S511633C-YL/N1L Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  636. K4S511633C-YL/N80 Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  637. K4S511633C-YL/N/P Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  638. K4S511633F Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  639. K4S511633F-F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  640. K4S511633F-F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  641. K4S511633F-F75 Samsung - 8m X 16bit X 4 Banks Mobile Sdram
  642. K4S511633F-L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  643. K4S511633F-YC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  644. K4S511633F-YPC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  645. K4S51163LC Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  646. K4S51163LC-XXXX Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  647. K4S51163LC-YG/S Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  648. K4S51163LC-YG/S15 Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  649. K4S51163LC-YG/S1H Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  650. K4S51163LF Samsung - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  651. K4S51163LF-Y(P)C/L/F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  652. K4S51163LF-Y(P)C/L/F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  653. K4S51163LF-Y(P)C/L/F75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  654. K4S51163PF Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  655. K4S51163PF-F1L Samsung - 8m X 16bit X 4 Banks Mobile-sdram
  656. K4S51163PF-F90 Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAM
  657. K4S51163PF-Y Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAM
  658. K4S51163PF-Y(P)F1L Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  659. K4S51163PF-Y(P)F75 Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  660. K4S51163PF-Y(P)F90 Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  661. K4S51163PF-YF Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAM
  662. K4S513233C Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  663. K4S513233C-ML/N/P Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  664. K4S513233C-ML/N/P1H Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  665. K4S513233C-ML/N/P1L Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  666. K4S513233C-ML/N/P80 Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  667. K4S513233C-MXXX Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  668. K4S513233F Samsung - Mobile SDRAM
  669. K4S513233F-F1H Samsung - Mobile SDRAM
  670. K4S513233F-F1L Samsung - Mobile Sdram
  671. K4S513233F-F75 Samsung - Mobile SDRAM
  672. K4S513233F-L Samsung - Mobile SDRAM
  673. K4S513233F-M(E)C/L/F1H Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  674. K4S513233F-M(E)C/L/F1L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  675. K4S513233F-M(E)C/L/F75 Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  676. K4S513233F-MC Samsung - Mobile SDRAM
  677. K4S51323L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  678. K4S51323LC Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  679. K4S51323LC-MG/S Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  680. K4S51323LC-MG/S15 Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  681. K4S51323LC-MG/S1H Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  682. K4S51323LC-MXXX Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  683. K4S51323LF Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  684. K4S51323LF-F1H Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  685. K4S51323LF-F1L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  686. K4S51323LF-F75 Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  687. K4S51323LF-L Samsung - 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
  688. K4S51323LF-M(E)C/L/F1H Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  689. K4S51323LF-M(E)C/L/F1L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  690. K4S51323LF-M(E)C/L/F75 Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  691. K4S51323LF-MC Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  692. K4S51323P Samsung - 4m X 32bit X 4 Banks Mobile-sdram
  693. K4S51323PF Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAMThe K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  694. K4S51323PF-MEF1L Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  695. K4S51323PF-MEF75 Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  696. K4S51323PF-MEF90 Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  697. K4S51323PF-MF1L Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  698. K4S51323PF-MF75 Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  699. K4S51323PF-MF90 Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  700. K4S560432A Samsung - 256mbit Sdram 16m X 4bit X 4 Banks Synchronous Dram Lvttl
  701. K4S560432A-TC/L1H Samsung - K4S560432A 16MBx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  702. K4S560432A-TC/L1L Samsung - K4S560432A 16MBx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  703. K4S560432A-TC/L75 Samsung - K4S560432A 16MBx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  704. K4S560432A-TC/L80 Samsung - K4S560432A 16MBx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  705. K4S560432B Samsung - 256mbit Sdram 16m X 4bit X 4 Banks Synchronous Dram Lvttl
  706. K4S560432B-TC/L1H Samsung - K4S560432B 16MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  707. K4S560432B-TC/L1L Samsung - K4S560432B 16MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  708. K4S560432B-TC/L75 Samsung - K4S560432B 16MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  709. K4S560432C Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  710. K4S560432C-TB1H Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  711. K4S560432C-TB1L Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  712. K4S560432C-TB75 Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  713. K4S560432C-TB7C Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  714. K4S560432C-TC/L1H Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  715. K4S560432C-TC/L1L Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  716. K4S560432C-TC/L75 Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  717. K4S560432C-TC/L7C Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  718. K4S560432D Samsung - 16m X 4bit X 4 Banks Synchronous Dram Lvttl
  719. K4S560432D-TC1H Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  720. K4S560432D-TC1L Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  721. K4S560432D-TC75 Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  722. K4S560432D-TC7C Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  723. K4S560432D-TC/L1H Samsung - K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  724. K4S560432D-TC/L1L Samsung - K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  725. K4S560432D-TC/L75 Samsung - K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  726. K4S560432D-TC/L7C Samsung - K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  727. K4S560432D-TL1H Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  728. K4S560432D-TL1L Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  729. K4S560432D-TL75 Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  730. K4S560432D-TL7C Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  731. K4S560432E Samsung - K4S560432E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  732. K4S560432E-NC Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  733. K4S560432E-NC75 Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  734. K4S560432E-NCL75 Samsung - 128mb E-die Sdram Specification
  735. K4S560432E-NL75 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  736. K4S560432E-TC Samsung - 256Mb E-die SDRAM Specification
  737. K4S560432E-TC75 Samsung - 256mb E-die Sdram Specification
  738. K4S560432E-TCL75 Samsung - K4S560432E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  739. K4S560432E-TL75 Samsung - 256Mb E-die SDRAM Specification
  740. K4S560432E-UC Samsung - 256mb E-die Sdram Specification 54 Tsop-ii With Pb-free (rohs Compliant)
  741. K4S560432E-UC75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  742. K4S560432E-UL75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  743. K4S560832A Samsung - 256mbit Sdram 8m X 8bit X 4 Banks Synchronous Dram Lvttl
  744. K4S560832A-TC/L1H Samsung - K4S560832A 8MBx8Bitx4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  745. K4S560832A-TC/L1L Samsung - K4S560832A 8MBx8Bitx4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  746. K4S560832A-TC/L75 Samsung - K4S560832A 8MBx8Bitx4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  747. K4S560832A-TC/L80 Samsung - K4S560832A 8MBx8Bitx4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  748. K4S560832B Samsung - 256mbit Sdram 8m X 8bit X 4 Banks Synchronous Dram Lvttl
  749. K4S560832B-TC/L1H Samsung - K4S560832B 8MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  750. K4S560832B-TC/L1L Samsung - K4S560832B 8MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  751. K4S560832B-TC/L75 Samsung - K4S560832B 8MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  752. K4S560832C Samsung - 256mbit Sdram 8m X 8bit X 4 Banks Synchronous Dram Lvttl
  753. K4S560832C-TB1H Samsung - K4S560832C 8M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  754. K4S560832C-TB1L Samsung - K4S560832C 8M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  755. K4S560832C-TB75 Samsung - K4S560832C 8M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  756. K4S560832C-TB7C Samsung - K4S560832C 8M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  757. K4S560832C-TC/L1H Samsung - K4S560832C 8M X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  758. K4S560832C-TC/L1L Samsung - K4S560832C 8M X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  759. K4S560832C-TC/L75 Samsung - K4S560832C 8M X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  760. K4S560832C-TC/L7C Samsung - K4S560832C 8M X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  761. K4S560832D Samsung - 256mbit Sdram 8m X 8bit X 4 Banks Synchronous Dram Lvttl
  762. K4S560832D-TC1H Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  763. K4S560832D-TC1L Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  764. K4S560832D-TC7A Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  765. K4S560832D-TC7C Samsung - 32mx64 Sdram Dimm Based On 32mx8, 4banks, 8k Refresh, 3.3v Synchronous Drams With Spd
  766. K4S560832D-TC/L1H Samsung - K4S560832D 8Mx8bitx4Banks Synchronous DRAM LVTTL ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  767. K4S560832D-TC/L1L Samsung - K4S560832D 8Mx8bitx4Banks Synchronous DRAM LVTTL ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  768. K4S560832D-TC/L75 Samsung - K4S560832D 8Mx8bitx4Banks Synchronous DRAM LVTTL ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  769. K4S560832D-TC/L7C Samsung - K4S560832D 8Mx8bitx4Banks Synchronous DRAM LVTTL ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  770. K4S560832D-TL1H Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  771. K4S560832D-TL1L Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  772. K4S560832D-TL7A Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  773. K4S560832D-TL7C Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  774. K4S560832E Samsung - K4S560832E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  775. K4S560832E-NC75 Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  776. K4S560832E-NCL75 Samsung - 128mb E-die Sdram Specification
  777. K4S560832E-NL75 Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  778. K4S560832E-TC75 Samsung - 256Mb E-die SDRAM Specification
  779. K4S560832E-TCL75 Samsung - K4S560832E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  780. K4S560832E-TL75 Samsung - 256Mb E-die SDRAM Specification
  781. K4S560832E-UC75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  782. K4S560832E-UL75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  783. K4S561632A Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous Dram Lvttl
  784. K4S561632A-TC/L1H Samsung - K4S561632A 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  785. K4S561632A-TC/L1L Samsung - K4S561632A 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  786. K4S561632A-TC/L75 Samsung - K4S561632A 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  787. K4S561632A-TC/L80 Samsung - K4S561632A 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  788. K4S561632B Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous Dram Lvttl
  789. K4S561632B-TC/L1H Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  790. K4S561632B-TC/L1L Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  791. K4S561632B-TC/L75 Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  792. K4S561632B-TIP Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  793. K4S561632B-TI/P1H Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  794. K4S561632B-TI/P1L Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  795. K4S561632B-TI/P75 Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  796. K4S561632C Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  797. K4S561632C-TB1H Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  798. K4S561632C-TB1L Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  799. K4S561632C-TB75 Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  800. K4S561632C-TB7C Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  801. K4S561632C-TC/L1H Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  802. K4S561632C-TC/L1L Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  803. K4S561632C-TC/L60 Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  804. K4S561632C-TC/L75 Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  805. K4S561632C-TC/L7C Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  806. K4S561632D Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous Dram Lvttl
  807. K4S561632D-NC/L1H Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  808. K4S561632D-NC/L1L Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  809. K4S561632D-NC/L60 Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  810. K4S561632D-NC/L75 Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  811. K4S561632D-NC/L7C Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  812. K4S561632D-TC/L1H Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  813. K4S561632D-TC/L1L Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  814. K4S561632D-TC/L60 Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  815. K4S561632D-TC/L75 Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  816. K4S561632D-TC/L7C Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  817. K4S561632E Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  818. K4S561632E Samsung - 256Mb E-die SDRAM Specification
  819. K4S561632E-NCL60 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  820. K4S561632E-NCL75 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  821. K4S561632E-TC60 Samsung - 256Mb E-die SDRAM Specification
  822. K4S561632E-TC75 Samsung - 256Mb E-die SDRAM Specification
  823. K4S561632E-TCL60 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  824. K4S561632E-TCL60/75 Samsung - K4S561632E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,60 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  825. K4S561632E-TCL75 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  826. K4S561632E-TL60 Samsung - 256Mb E-die SDRAM Specification
  827. K4S561632E-TL75 Samsung - 256Mb E-die SDRAM Specification
  828. K4S561632E-UC60 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  829. K4S561632E-UC75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  830. K4S561632E-UL60 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  831. K4S561632E-UL75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  832. K4S561633C Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  833. K4S561633C-N Samsung - 16Mx16 SDRAM 54CSP
  834. K4S561633C-P1H Samsung - 16Mx16 SDRAM 54CSP
  835. K4S561633C-P1L Samsung - 16mx16 Sdram 54csp
  836. K4S561633C-P75 Samsung - 16Mx16 SDRAM 54CSP
  837. K4S561633C-RBL Samsung - 16Mx16 SDRAM 54CSP
  838. K4S561633C-RBL/N/P Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  839. K4S561633C-RBL/N/P1H Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  840. K4S561633C-RBL/N/P1L Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  841. K4S561633C-RBL/N/P75 Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  842. K4S561633C-RL Samsung - 16Mx16 SDRAM 54CSP
  843. K4S561633C-XXXX Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  844. K4S561633F Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  845. K4S561633F-C Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54boc
  846. K4S561633F-E Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  847. K4S561633F-F1H Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  848. K4S561633F-F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  849. K4S561633F-F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  850. K4S561633F-G Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  851. K4S561633F-L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  852. K4S561633F-N Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  853. K4S561633F-X Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  854. K4S561633F-X(Z)E/N/G/C/L/F1H Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  855. K4S561633F-X(Z)E/N/G/C/L/F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  856. K4S561633F-X(Z)E/N/G/C/L/F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  857. K4S561633F-XE Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  858. K4S56163LC Samsung - 16mx16 Mobile Sdram 54csp
  859. K4S56163LC-RBF/R Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  860. K4S56163LC-RBF/R15 Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  861. K4S56163LC-RBF/R1H Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  862. K4S56163LC-RBF/R1L Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  863. K4S56163LC-RBF/R75 Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  864. K4S56163LC-RF Samsung - 16Mx16 Mobile SDRAM 54CSP
  865. K4S56163LC-XXXX Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  866. K4S56163LF Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  867. K4S56163LF-F1H Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54boc
  868. K4S56163LF-F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  869. K4S56163LF-F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  870. K4S56163LF-G Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  871. K4S56163LF-L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  872. K4S56163LF-N Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  873. K4S56163LF-X(Z)E/N/G/C/L/F1H Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  874. K4S56163LF-X(Z)E/N/G/C/L/F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  875. K4S56163LF-X(Z)E/N/G/C/L/F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  876. K4S56163LF-XE Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  877. K4S56163PF Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  878. K4S56163PF-F1L Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54fbga
  879. K4S56163PF-F90 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  880. K4S56163PF-R(B)G/F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  881. K4S56163PF-R(B)G/F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  882. K4S56163PF-R(B)G/F90 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  883. K4S56163PF-RG Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  884. K4S563233F Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  885. K4S563233F-F(H)E/N/G/C/L/F60 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
  886. K4S563233F-F(H)E/N/G/C/L/F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
  887. K4S563233FHN Samsung - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
  888. K4S563233FHN75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  889. K4S56323LF Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  890. K4S56323LF-C Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  891. K4S56323LF-F(H)E/N/S/C/L/R60 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
  892. K4S56323LF-F(H)E/N/S/C/L/R75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
  893. K4S56323LF-FE Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  894. K4S56323LF-L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  895. K4S56323LF-N Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  896. K4S56323LF-R1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  897. K4S56323LF-S Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  898. K4S56323PF Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  899. K4S56323PF-F(H)G/F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAhe K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  900. K4S56323PF-F(H)G/F90 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAhe K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  901. K4S56323PF-F1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  902. K4S56323PF-F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  903. K4S56323PF-F90 Samsung - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
  904. K4S56323PF-FG Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  905. K4S640432C Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  906. K4S640432C-TC/L10 Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  907. K4S640432C-TC/L1H Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  908. K4S640432C-TC/L1L Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  909. K4S640432C-TC/L70 Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  910. K4S640432C-TC/L80 Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  911. K4S640432D Samsung - 64mbit Sdram 4m X 4bit X 4 Banks Synchronous Dram Lvttl
  912. K4S640432D-TC/L10 Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  913. K4S640432D-TC/L1H Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  914. K4S640432D-TC/L1L Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  915. K4S640432D-TC/L75 Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  916. K4S640432D-TC/L80 Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  917. K4S640432E Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM
  918. K4S640432E-L1H Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM
  919. K4S640432E-L1L Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM
  920. K4S640432E-L75 Samsung - 4m X 4bit X 4 Banks Synchronous Dram
  921. K4S640432E-TC Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM
  922. K4S640432E-TC/L1H Samsung - K4S640432E 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  923. K4S640432E-TC/L1L Samsung - K4S640432E 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  924. K4S640432E-TC/L75 Samsung - K4S640432E 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  925. K4S640432F Samsung - 4m X 4bit X 4 Banks Synchronous Dram Lvttl
  926. K4S640432F-TC1H Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  927. K4S640432F-TC1L Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  928. K4S640432F-TC75 Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  929. K4S640432F-TC/L75 Samsung - K4S640432F 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  930. K4S640432F-TL1H Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  931. K4S640432F-TL1L Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  932. K4S640432F-TL75 Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  933. K4S640432H Samsung - K4S640432H 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  934. K4S640432H-TC Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  935. K4S640432H-TC75 Samsung - 64mb H-die Sdram Specification 54 Tsop-ii With Pb-free
  936. K4S640432H-TCL75 Samsung - K4S640432H 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  937. K4S640432H-TL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  938. K4S640432H-UC Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  939. K4S640432H-UC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  940. K4S640432H-UL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  941. K4S640832C Samsung - 64mbit Sdram 2m X 8bit X 4 Banks Synchronous Dram Lvttl
  942. K4S640832C-TC/L10 Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  943. K4S640832C-TC/L1H Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  944. K4S640832C-TC/L1L Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  945. K4S640832C-TC/L70 Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  946. K4S640832C-TC/L80 Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  947. K4S640832D Samsung - 64mbit Sdram 2m X 8bit X 4 Banks Synchronous Dram Lvttl
  948. K4S640832D-TC/L10 Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  949. K4S640832D-TC/L1H Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  950. K4S640832D-TC/L1L Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  951. K4S640832D-TC/L75 Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  952. K4S640832D-TC/L80 Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  953. K4S640832E Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  954. K4S640832E-TC1H Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  955. K4S640832E-TC1L Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  956. K4S640832E-TC75 Samsung - 64mbit Sdram 2m X 8bit X 4 Banks Synchronous Dram Lvttl
  957. K4S640832E-TC/L1H Samsung - K4S640832E 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  958. K4S640832E-TC/L1L Samsung - K4S640832E 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  959. K4S640832E-TC/L75 Samsung - K4S640832E 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  960. K4S640832E-TL1H Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  961. K4S640832E-TL1L Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  962. K4S640832E-TL75 Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  963. K4S640832F Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  964. K4S640832F-TC75 Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  965. K4S640832F-TC/L75 Samsung - K4S640832F 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  966. K4S640832F-TL75 Samsung - 64mbit Sdram 2m X 8bit X 4 Banks Synchronous Dram Lvttl
  967. K4S640832H Samsung - K4S640832H 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  968. K4S640832H-TC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  969. K4S640832H-TCL75 Samsung - K4S640832H 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  970. K4S640832H-TL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  971. K4S640832H-UC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  972. K4S640832H-UL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  973. K4S641632C Samsung - 1m X 16bit X 4 Banks Synchronous Dram
  974. K4S641632C-TC/L10 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  975. K4S641632C-TC/L1H Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  976. K4S641632C-TC/L1L Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  977. K4S641632C-TC/L60 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  978. K4S641632C-TC/L70 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  979. K4S641632C-TC/L75 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  980. K4S641632C-TC/L80 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  981. K4S641632D Samsung - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous Dram Lvttl
  982. K4S641632D-TC/L1H Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  983. K4S641632D-TC/L1L Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  984. K4S641632D-TC/L55 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  985. K4S641632D-TC/L60 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  986. K4S641632D-TC/L70 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  987. K4S641632D-TC/L75 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  988. K4S641632D-TC/L80 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  989. K4S641632E Samsung - 64Mbit SDRAM
  990. K4S641632E-TC1H Samsung - 64Mbit SDRAM
  991. K4S641632E-TC1H/TL1H Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  992. K4S641632E-TC1L Samsung - 64Mbit SDRAM
  993. K4S641632E-TC1L/TL1L Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  994. K4S641632E-TC50 Samsung - 64Mbit SDRAM
  995. K4S641632E-TC50/TL50 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  996. K4S641632E-TC55 Samsung - 64Mbit SDRAM
  997. K4S641632E-TC55/TL55 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  998. K4S641632E-TC60 Samsung - 64mbit Sdram
  999. K4S641632E-TC60/TL60 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1000. K4S641632E-TC70 Samsung - 64Mbit SDRAM
  1001. K4S641632E-TC70/TL70 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1002. K4S641632E-TC75 Samsung - 64Mbit SDRAM
  1003. K4S641632E-TC75/TL75 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1004. K4S641632E-TC/L1H Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1005. K4S641632E-TC/L1L Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1006. K4S641632E-TC/L55 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1007. K4S641632E-TC/L60 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1008. K4S641632E-TC/L70 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1009. K4S641632E-TC/L75 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1010. K4S641632E-TL1H Samsung - 64Mbit SDRAM
  1011. K4S641632E-TL1L Samsung - 64Mbit SDRAM
  1012. K4S641632E-TL50 Samsung - 64Mbit SDRAM
  1013. K4S641632E-TL55 Samsung - 64Mbit SDRAM
  1014. K4S641632E-TL60 Samsung - 64Mbit SDRAM
  1015. K4S641632E-TL70 Samsung - 64Mbit SDRAM
  1016. K4S641632E-TL75 Samsung - 64Mbit SDRAM
  1017. K4S641632F Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1018. K4S641632F-TC1H Samsung - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous Dram Lvttl
  1019. K4S641632F-TC1H/TL1H Samsung - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1020. K4S641632F-TC1L Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1021. K4S641632F-TC1L/TL1L Samsung - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1022. K4S641632F-TC50 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1023. K4S641632F-TC50/TL50 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1024. K4S641632F-TC55 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1025. K4S641632F-TC55/TL55 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1026. K4S641632F-TC60 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1027. K4S641632F-TC60/TL60 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1028. K4S641632F-TC70 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1029. K4S641632F-TC70/TL70 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1030. K4S641632F-TC75 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1031. K4S641632F-TC75/TL75 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1032. K4S641632F-TL1H Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1033. K4S641632F-TL1L Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1034. K4S641632F-TL50 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1035. K4S641632F-TL55 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1036. K4S641632F-TL60 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1037. K4S641632F-TL70 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1038. K4S641632F-TL75 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1039. K4S641632H Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1040. K4S641632H-TC60 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1041. K4S641632H-TC70 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1042. K4S641632H-TC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1043. K4S641632H-TCL60 Samsung - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1044. K4S641632H-TCL70 Samsung - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1045. K4S641632H-TCL75 Samsung - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1046. K4S641632H-TL60 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1047. K4S641632H-TL70 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1048. K4S641632H-TL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1049. K4S641632H-UC60 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1050. K4S641632H-UC70 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1051. K4S641632H-UC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1052. K4S641632H-UL60 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1053. K4S641632H-UL70 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1054. K4S641632H-UL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1055. K4S641633D Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1056. K4S641633D-G Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1057. K4S641633D-GC/L1H Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1058. K4S641633D-GC/L1L Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1059. K4S641633D-GE/N1H Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1060. K4S641633D-GE/N1L Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1061. K4S641633F Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1062. K4S641633F-GAL/N/P Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1063. K4S641633F-GAL/N/P1H Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1064. K4S641633F-GAL/N/P1L Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1065. K4S641633F-GAL/N/P75 Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1066. K4S641633H Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1067. K4S641633H-C Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1068. K4S641633H-F1H Samsung - 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1069. K4S641633H-F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1070. K4S641633H-F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1071. K4S641633H-G Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1072. K4S641633H-L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1073. K4S641633H-N Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1074. K4S641633H-R Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1075. K4S641633H-R(B)E/N/G/C/L/F1H Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1076. K4S641633H-R(B)E/N/G/C/L/F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1077. K4S641633H-R(B)E/N/G/C/L/F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1078. K4S641633H-RBE Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1079. K4S641633H-RE Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1080. K4S64163LF Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1081. K4S64163LF-GAF/R Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1082. K4S64163LF-GAF/R15 Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1083. K4S64163LF-GAF/R1H Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1084. K4S64163LF-GAF/R1L Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1085. K4S64163LF-GAF/R75 Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1086. K4S64163LH Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1087. K4S64163LH-C Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1088. K4S64163LH-F1H Samsung - 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1089. K4S64163LH-F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1090. K4S64163LH-F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1091. K4S64163LH-G Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1092. K4S64163LH-L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1093. K4S64163LH-N Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1094. K4S64163LH-R(B)E/N/G/C/L/F1H Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1095. K4S64163LH-R(B)E/N/G/C/L/F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1096. K4S64163LH-R(B)E/N/G/C/L/F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1097. K4S64163LH-RBE Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1098. K4S64163LH-RE Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1099. K4S643232C Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1100. K4S643232C-TC10 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1101. K4S643232C-TC55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1102. K4S643232C-TC60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1103. K4S643232C-TC70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1104. K4S643232C-TC80 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1105. K4S643232C-TC/L10 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1106. K4S643232C-TC/L55 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1107. K4S643232C-TC/L60 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1108. K4S643232C-TC/L70 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1109. K4S643232C-TC/L80 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1110. K4S643232C-TL10 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1111. K4S643232C-TL55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1112. K4S643232C-TL60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1113. K4S643232C-TL70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1114. K4S643232C-TL80 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1115. K4S643232E Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl(3.3v)
  1116. K4S643232E Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1117. K4S643232E-TC45 Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  1118. K4S643232E-TC50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1119. K4S643232E-TC55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1120. K4S643232E-TC60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1121. K4S643232E-TC70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1122. K4S643232E-TC/L45 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1123. K4S643232E-TC/L50 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1124. K4S643232E-TC/L55 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1125. K4S643232E-TC/L60 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1126. K4S643232E-TC/L70 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1127. K4S643232E-TE50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1128. K4S643232E-TE60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1129. K4S643232E-TE70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1130. K4S643232E-TI Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  1131. K4S643232E-TI60 Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous DRAM LVTTL (3.3v)
  1132. K4S643232E-TI70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1133. K4S643232E-TL45 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1134. K4S643232E-TL50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1135. K4S643232E-TL55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1136. K4S643232E-TL60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1137. K4S643232E-TL70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1138. K4S643232E-TN50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1139. K4S643232E-TN60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1140. K4S643232E-TN70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1141. K4S643232E-TP60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1142. K4S643232E-TP70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1143. K4S643232F Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  1144. K4S643232F- Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl3.3v
  1145. K4S643232F-TC45 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1146. K4S643232F-TC50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1147. K4S643232F-TC55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1148. K4S643232F-TC60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1149. K4S643232F-TC70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1150. K4S643232F-TC/L45 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1151. K4S643232F-TC/L50 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1152. K4S643232F-TC/L55 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1153. K4S643232F-TC/L60 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1154. K4S643232F-TC/L70 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1155. K4S643232F-TI60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  1156. K4S643232F-TI70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  1157. K4S643232F-TL45 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1158. K4S643232F-TL50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1159. K4S643232F-TL55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1160. K4S643232F-TL60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1161. K4S643232F-TL70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1162. K4S643232F-TP60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  1163. K4S643232F-TP70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  1164. K4S643232H Samsung - 64mb H-die (x32) Sdram Specification
  1165. K4S643232H-TC50 Samsung - 64Mb H-die (x32) SDRAM Specification
  1166. K4S643232H-TC50 Samsung - 64mb H-die (x32) Sdram Specification
  1167. K4S643232H-TC55 Samsung - 64Mb H-die (x32) SDRAM Specification
  1168. K4S643232H-TC55 Samsung - 64Mb H-die (x32) SDRAM Specification
  1169. K4S643232H-TC60 Samsung - 64Mb H-die (x32) SDRAM Specification
  1170. K4S643232H-TC60 Samsung - 64Mb H-die (x32) SDRAM Specification
  1171. K4S643232H-TC70 Samsung - 64Mb H-die (x32) SDRAM Specification
  1172. K4S643232H-TC70 Samsung - 64Mb H-die (x32) SDRAM Specification
  1173. K4S643232H-TC/L50 Samsung - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  1174. K4S643232H-TC/L55 Samsung - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  1175. K4S643232H-TC/L60 Samsung - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  1176. K4S643232H-TC/L70 Samsung - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  1177. K4S643232H-TL50 Samsung - 64Mb H-die (x32) SDRAM Specification
  1178. K4S643232H-TL50 Samsung - 64Mb H-die (x32) SDRAM Specification
  1179. K4S643232H-TL55 Samsung - 64Mb H-die (x32) SDRAM Specification
  1180. K4S643232H-TL55 Samsung - 64Mb H-die (x32) SDRAM Specification
  1181. K4S643232H-TL60 Samsung - 64Mb H-die (x32) SDRAM Specification
  1182. K4S643232H-TL60 Samsung - 64Mb H-die (x32) SDRAM Specification
  1183. K4S643232H-TL70 Samsung - 64Mb H-die (x32) SDRAM Specification
  1184. K4S643232H-TL70 Samsung - 64Mb H-die (x32) SDRAM Specification
  1185. K4S643233E Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1186. K4S643233E-SE/N Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1187. K4S643233E-SE/N10 Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1188. K4S643233E-SE/N70 Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1189. K4S643233E-SE/N80 Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1190. K4S643233F Samsung - 2mx32 Mobile Sdram 90fbga Cmos Sdram
  1191. K4S643233F-DE/N/I/P1H Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1192. K4S643233F-DE/N/I/P1L Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1193. K4S643233F-DE/N/I/P75 Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1194. K4S643233F-SDE/N/I/P Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1195. K4S643233FSE/N/I/P1H Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1196. K4S643233F-SE/N/I/P1L Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1197. K4S643233F-SE/N/I/P75 Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1198. K4S643233F-XXXX Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1199. K4S643233H Samsung - Mobile-SDRAM
  1200. K4S643233H-C Samsung - Mobile-sdram
  1201. K4S643233H-F Samsung - Mobile-SDRAM
  1202. K4S643233H-F(H)E/N/G/C/L/F1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1203. K4S643233H-F(H)E/N/G/C/L/F1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1204. K4S643233H-F(H)E/N/G/C/L/F60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1205. K4S643233H-F(H)E/N/G/C/L/F75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1206. K4S643233H-F1H Samsung - Mobile-SDRAM
  1207. K4S643233H-F1L Samsung - Mobile-SDRAM
  1208. K4S643233H-FE Samsung - Mobile-SDRAM
  1209. K4S643233H-FHE Samsung - Mobile-SDRAM
  1210. K4S643233H-G Samsung - Mobile-SDRAM
  1211. K4S643233H-L Samsung - Mobile-SDRAM
  1212. K4S643233H-N Samsung - Mobile-SDRAM
  1213. K4S643234E Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1214. K4S643234E-SE/N Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1215. K4S643234E-SE/N10 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1216. K4S643234E-SE/N70 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1217. K4S643234E-TC Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1218. K4S643234E-TC10 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1219. K4S643234E-TC60 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1220. K4S643234E-TC70 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1221. K4S643234E-TC80 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1222. K4S64323LF Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1223. K4S64323LF-DG15 Samsung - 2mx32 Mobile Sdram 90fbga
  1224. K4S64323LF-DG1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1225. K4S64323LF-DG1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1226. K4S64323LF-DG75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1227. K4S64323LF-DN15 Samsung - 2mx32 Mobile Sdram 90fbga
  1228. K4S64323LF-DN15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1229. K4S64323LF-DN1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1230. K4S64323LF-DN1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1231. K4S64323LF-DN1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1232. K4S64323LF-DN1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1233. K4S64323LF-DN75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1234. K4S64323LF-DN75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1235. K4S64323LF-DP15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1236. K4S64323LF-DP15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1237. K4S64323LF-DP1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1238. K4S64323LF-DP1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1239. K4S64323LF-DP1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1240. K4S64323LF-DP1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1241. K4S64323LF-DP75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1242. K4S64323LF-DP75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1243. K4S64323LF-DS15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1244. K4S64323LF-DS1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1245. K4S64323LF-DS1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1246. K4S64323LF-DS75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1247. K4S64323LF-DU15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1248. K4S64323LF-DU15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1249. K4S64323LF-DU1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1250. K4S64323LF-DU1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1251. K4S64323LF-DU1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1252. K4S64323LF-DU1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1253. K4S64323LF-DU75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1254. K4S64323LF-DU75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1255. K4S64323LF-S Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1256. K4S64323LF-SDG/S Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1257. K4S64323LF-SDG/S15 Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1258. K4S64323LF-SDG/S1H Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1259. K4S64323LF-SDG/S1L Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1260. K4S64323LF-SDG/S75 Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1261. K4S64323LF-SG15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1262. K4S64323LF-SG1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1263. K4S64323LF-SG1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1264. K4S64323LF-SG75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1265. K4S64323LF-SN Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1266. K4S64323LF-SN15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1267. K4S64323LF-SN15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1268. K4S64323LF-SN1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1269. K4S64323LF-SN1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1270. K4S64323LF-SN1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1271. K4S64323LF-SN1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1272. K4S64323LF-SN75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1273. K4S64323LF-SN75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1274. K4S64323LF-SP15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1275. K4S64323LF-SP15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1276. K4S64323LF-SP1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1277. K4S64323LF-SP1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1278. K4S64323LF-SP1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1279. K4S64323LF-SP1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1280. K4S64323LF-SP75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1281. K4S64323LF-SP75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1282. K4S64323LF-SS15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1283. K4S64323LF-SS1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1284. K4S64323LF-SS1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1285. K4S64323LF-SS75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1286. K4S64323LF-SU15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1287. K4S64323LF-SU15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1288. K4S64323LF-SU1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1289. K4S64323LF-SU1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1290. K4S64323LF-SU1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1291. K4S64323LF-SU1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1292. K4S64323LF-SU75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1293. K4S64323LF-SU75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1294. K4S64323LF-XXXX Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1295. K4S64323LH Samsung - 512k X 32bit X 4 Banks Mobile Sdram In 90fbga
  1296. K4S64323LH-F(H)E/N/G/C/L/F1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1297. K4S64323LH-F(H)E/N/G/C/L/F1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1298. K4S64323LH-F(H)E/N/G/C/L/F60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1299. K4S64323LH-F(H)E/N/G/C/L/F75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1300. K4S64323LH-FC1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1301. K4S64323LH-FC1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1302. K4S64323LH-FC60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1303. K4S64323LH-FC75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1304. K4S64323LH-FE1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1305. K4S64323LH-FE1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1306. K4S64323LH-FE60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1307. K4S64323LH-FE75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1308. K4S64323LH-FF1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1309. K4S64323LH-FF1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1310. K4S64323LH-FF60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1311. K4S64323LH-FF75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1312. K4S64323LH-FG1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1313. K4S64323LH-FG1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1314. K4S64323LH-FG60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1315. K4S64323LH-FG75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1316. K4S64323LH-FL1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1317. K4S64323LH-FL1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1318. K4S64323LH-FL60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1319. K4S64323LH-FL75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1320. K4S64323LH-FN1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1321. K4S64323LH-FN1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1322. K4S64323LH-FN60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1323. K4S64323LH-FN75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1324. K4S64323LH-HC1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1325. K4S64323LH-HC1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1326. K4S64323LH-HC60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1327. K4S64323LH-HC75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1328. K4S64323LH-HE1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1329. K4S64323LH-HE1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1330. K4S64323LH-HE60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1331. K4S64323LH-HE75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1332. K4S64323LH-HF1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1333. K4S64323LH-HF1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1334. K4S64323LH-HF60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1335. K4S64323LH-HF75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1336. K4S64323LH-HG1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1337. K4S64323LH-HG1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1338. K4S64323LH-HG60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1339. K4S64323LH-HG75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1340. K4S64323LH-HL1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1341. K4S64323LH-HL1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1342. K4S64323LH-HL60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1343. K4S64323LH-HL75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1344. K4S64323LH-HN1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1345. K4S64323LH-HN1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1346. K4S64323LH-HN60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1347. K4S64323LH-HN75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1348. K4T1G044QA Samsung - 1gb A-die Ddr2 Sdram Specification
  1349. K4T1G044QA-ZCCC0 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1350. K4T1G044QA-ZCD5 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1351. K4T1G044QA-ZCD50 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1352. K4T1G044QA-ZCE6 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1353. K4T1G044QM Samsung - 1gb M-die Ddr2 Sdram Specification
  1354. K4T1G044QM-ZCCC Samsung - 1Gb M-die DDR2 SDRAM Specification
  1355. K4T1G044QM-ZCD5 Samsung - 1Gb M-die DDR2 SDRAM Specification
  1356. K4T1G084QA Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1357. K4T1G084QA-ZCCC0 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1358. K4T1G084QA-ZCD5 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1359. K4T1G084QA-ZCD50 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1360. K4T1G084QA-ZCDS0 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1361. K4T1G084QA-ZCE6 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1362. K4T1G084QA-ZCE60 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1363. K4T1G084QM-ZCCC Samsung - 1Gb M-die DDR2 SDRAM Specification
  1364. K4T1G084QM-ZCD5 Samsung - 1Gb M-die DDR2 SDRAM Specification
  1365. K4T1G164QA Samsung - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  1366. K4T1G164QA-ZCCC0 Samsung - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  1367. K4T1G164QA-ZCD5 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1368. K4T1G164QA-ZCD50 Samsung - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  1369. K4T1G164QA-ZCE6 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1370. K4T1G164QM-ZCCC Samsung - 1Gb M-die DDR2 SDRAM Specification
  1371. K4T1G164QM-ZCD5 Samsung - 1Gb M-die DDR2 SDRAM Specification
  1372. K4T51043Q Samsung - 512mb B-die Ddr2 Sdram
  1373. K4T51043QB Samsung - 512Mb B-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications.
  1374. K4T51043QB Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1375. K4T51043QB-GCCC Samsung - 512Mb B-die DDR2 SDRAM
  1376. K4T51043QB-GCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1377. K4T51043QB-GCE6 Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1378. K4T51043QB-GLCC Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1379. K4T51043QB-GLD5 Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1380. K4T51043QB-GLE6 Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1381. K4T51043QB-ZCCC Samsung - 512Mb B-die DDR2 SDRAM
  1382. K4T51043QB-ZCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1383. K4T51043QC Samsung - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1384. K4T51043QC-ZC(L)E7 Samsung - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1385. K4T51043QC-ZCCC Samsung - 512Mb C-die DDR2 SDRAM
  1386. K4T51043QC-ZCD5 Samsung - 512Mb C-die DDR2 SDRAM
  1387. K4T51043QC-ZCD6 Samsung - 512Mb C-die DDR2 SDRAM
  1388. K4T51043QC-ZCE6 Samsung - 512Mb C-die DDR2 SDRAM
  1389. K4T51043QC-ZCE7 Samsung - 512Mb C-die DDR2 SDRAM
  1390. K4T51043QC-ZCLCC Samsung - 512mb C-die Ddr2 Sdram
  1391. K4T51043QC-ZCLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1392. K4T51043QC-ZCLD6 Samsung - 512Mb C-die DDR2 SDRAM
  1393. K4T51043QC-ZCLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1394. K4T51043QC-ZLCC Samsung - 512Mb C-die DDR2 SDRAM
  1395. K4T51043QC-ZLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1396. K4T51043QC-ZLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1397. K4T51043QC-ZLE7 Samsung - 512Mb C-die DDR2 SDRAM
  1398. K4T51043QM Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1399. K4T51043QM-GCD4 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1400. K4T51043QM-GCD5 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1401. K4T51043QM-GCE5 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1402. K4T51043QM-GLD4 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1403. K4T51043QM-GLD5 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1404. K4T51043QM-GLE5 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1405. K4T51083QB Samsung - 512Mb B-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications.
  1406. K4T51083QB Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1407. K4T51083QB-GCCC Samsung - 512Mb B-die DDR2 SDRAM
  1408. K4T51083QB-GCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1409. K4T51083QB-GCE6 Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1410. K4T51083QB-GLCC Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1411. K4T51083QB-GLD5 Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1412. K4T51083QB-GLE6 Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1413. K4T51083QB-ZCCC Samsung - 512Mb B-die DDR2 SDRAM
  1414. K4T51083QB-ZCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1415. K4T51083QC Samsung - 512Mb C-die DDR2 SDRAM
  1416. K4T51083QC-ZC(L)E7 Samsung - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 16Mbit x 8 I/Os x 4banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1417. K4T51083QC-ZCCC Samsung - 512Mb C-die DDR2 SDRAM
  1418. K4T51083QC-ZCD5 Samsung - 512Mb C-die DDR2 SDRAM
  1419. K4T51083QC-ZCD6 Samsung - 512Mb C-die DDR2 SDRAM
  1420. K4T51083QC-ZCE6 Samsung - 512Mb C-die DDR2 SDRAM
  1421. K4T51083QC-ZCE7 Samsung - 512Mb C-die DDR2 SDRAM
  1422. K4T51083QC-ZCLCC Samsung - 512Mb C-die DDR2 SDRAM
  1423. K4T51083QC-ZCLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1424. K4T51083QC-ZCLD6 Samsung - 512Mb C-die DDR2 SDRAM
  1425. K4T51083QC-ZCLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1426. K4T51083QC-ZLCC Samsung - 512Mb C-die DDR2 SDRAM
  1427. K4T51083QC-ZLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1428. K4T51083QC-ZLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1429. K4T51083QC-ZLE7 Samsung - 512Mb C-die DDR2 SDRAM
  1430. K4T51083QM Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1431. K4T51083QM-GCD4 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1432. K4T51083QM-GCD5 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1433. K4T51083QM-GCE5 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1434. K4T51083QM-GLD4 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1435. K4T51083QM-GLD5 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1436. K4T51083QM-GLE5 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1437. K4T51163QB Samsung - 512Mb B-die DDR2 SDRAM
  1438. K4T51163QB-GCCC Samsung - 512Mb B-die DDR2 SDRAM
  1439. K4T51163QB-GCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1440. K4T51163QB-GCE6 Samsung - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1441. K4T51163QB-GLCC Samsung - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1442. K4T51163QB-GLD5 Samsung - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1443. K4T51163QB-GLE6 Samsung - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1444. K4T51163QB-ZCCC Samsung - 512Mb B-die DDR2 SDRAM
  1445. K4T51163QB-ZCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1446. K4T51163QC Samsung - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1447. K4T51163QC-ZC(L)E7 Samsung - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1448. K4T51163QC-ZCCC Samsung - 512Mb C-die DDR2 SDRAM
  1449. K4T51163QC-ZCD5 Samsung - 512Mb C-die DDR2 SDRAM
  1450. K4T51163QC-ZCD6 Samsung - 512Mb C-die DDR2 SDRAM
  1451. K4T51163QC-ZCE6 Samsung - 512Mb C-die DDR2 SDRAM
  1452. K4T51163QC-ZCE7 Samsung - 512Mb C-die DDR2 SDRAM
  1453. K4T51163QC-ZCLCC Samsung - 512Mb C-die DDR2 SDRAM
  1454. K4T51163QC-ZCLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1455. K4T51163QC-ZCLD6 Samsung - 512Mb C-die DDR2 SDRAM
  1456. K4T51163QC-ZCLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1457. K4T51163QC-ZLCC Samsung - 512Mb C-die DDR2 SDRAM
  1458. K4T51163QC-ZLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1459. K4T51163QC-ZLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1460. K4T51163QC-ZLE7 Samsung - 512Mb C-die DDR2 SDRAM
  1461. K4T51163QM Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1462. K4T51163QM-GCD4 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1463. K4T51163QM-GCD5 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1464. K4T51163QM-GCE5 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1465. K4T51163QM-GLD4 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1466. K4T51163QM-GLD5 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1467. K4T51163QM-GLE5 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1468. K4T56043QF Samsung - 256Mb F-die DDR2 SDRAM
  1469. K4T56043QF-GCCC Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1470. K4T56043QF-GCD5 Samsung - 256Mb F-die DDR2 SDRAM
  1471. K4T56043QF-GCE6 Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1472. K4T56043QF-GLCC Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1473. K4T56043QF-GLD5 Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1474. K4T56043QF-GLE6 Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1475. K4T56043QF-ZCCC Samsung - 256Mb F-die DDR2 SDRAMThe 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and addres
  1476. K4T56043QF-ZCD5 Samsung - 256Mb F-die DDR2 SDRAM
  1477. K4T56083QF Samsung - 256Mb F-die DDR2 SDRAM
  1478. K4T56083QF-GCCC Samsung - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1479. K4T56083QF-GCD5 Samsung - 256Mb F-die DDR2 SDRAM
  1480. K4T56083QF-GCE6 Samsung - 256Mb F-die DDR2 SDRAM
  1481. K4T56083QF-GLCC Samsung - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1482. K4T56083QF-GLD5 Samsung - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1483. K4T56083QF-GLE6 Samsung - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1484. K4T56083QF-ZCD5 Samsung - 256mb F-die Ddr2 Sdram
  1485. K4T56083QF-ZCE6 Samsung - 256Mb F-die DDR2 SDRAM
  1486. K4X51163PC Samsung - 32m X16 Mobile-ddr Sdram
  1487. K4X51163PC-FEC3 Samsung - 32M x16 Mobile-DDR SDRAM
  1488. K4X51163PC-FECA Samsung - 32M x16 Mobile-DDR SDRAM
  1489. K4X51163PC-FGC3 Samsung - 32M x16 Mobile-DDR SDRAM
  1490. K4X51163PC-FGCA Samsung - 32M x16 Mobile-DDR SDRAM
  1491. K4X51163PC-LEC3 Samsung - 32M x16 Mobile-DDR SDRAM
  1492. K4X51163PC-LECA Samsung - 32M x16 Mobile-DDR SDRAM
  1493. K4X51163PC-LGC3 Samsung - 32M x16 Mobile-DDR SDRAM
  1494. K4X51163PC-LGCA Samsung - 32M x16 Mobile-DDR SDRAM
  1495. K4X56163PE Samsung - 16m X16 Mobile Ddr Sdram
  1496. K4X56163PE-LFG Samsung - 16M x16 Mobile DDR SDRAM
  1497. K4X56163PE-LG Samsung - 16M x16 Mobile DDR SDRAM
  1498. K4X56323PG Samsung - 8M x32 Mobile-DDR SDRAM
  1499. K4X56323PG-7EC3 Samsung - 8M x32 Mobile-DDR SDRAM
  1500. K4X56323PG-7GC3 Samsung - 8M x32 Mobile-DDR SDRAM
  1501. K4X56323PG-8EC3 Samsung - 8M x32 Mobile-DDR SDRAM
  1502. K4Y50024UC Samsung - XDR/RDRAMGeneral DescriptionThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1503. K4Y50024UC-JCA2 Samsung - XDR/RDRAMGeneral DescriptionThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1504. K4Y50024UC-JCB3 Samsung - XDR/RDRAMGeneral DescriptionThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1505. K4Y50024UC-JCC4 Samsung - XDR/RDRAMGeneral DescriptionThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1506. K4Y50044UC Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1507. K4Y50044UC-JCA2 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1508. K4Y50044UC-JCB3 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1509. K4Y50044UC-JCC4 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1510. K4Y50084UC Samsung - XDR/RDRAM The Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1511. K4Y50084UC-JCA2 Samsung - XDR/RDRAM The Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1512. K4Y50084UC-JCB3 Samsung - XDR/RDRAM The Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1513. K4Y50084UC-JCC4 Samsung - XDR/RDRAM The Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1514. K4Y50164UC Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1515. K4Y50164UC-JCA2 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1516. K4Y50164UC-JCB3 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1517. K4Y50164UC-JCC4 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1518. K4Y54044UF Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1519. K4Y54044UF-JCA2 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1520. K4Y54044UF-JCB3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1521. K4Y54044UF-JCC3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1522. K4Y54044UF-JCC4 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1523. K4Y54084UF Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1524. K4Y54084UF-JCA2 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1525. K4Y54084UF-JCB3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1526. K4Y54084UF-JCC3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1527. K4Y54084UF-JCC4 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1528. K4Y54164UF Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1529. K4Y54164UF-JCA2 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1530. K4Y54164UF-JCB3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1531. K4M281633F Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1532. K4M281633F-C Samsung - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1533. K4M281633F-F1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1534. K4M281633F-G Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1535. K4M281633F-L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1536. K4M281633F-N Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1537. K4M281633F-R(B)E/N/G/C/L/F1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1538. K4M281633F-R(B)E/N/G/C/L/F1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1539. K4M281633F-R(B)E/N/G/C/L/F75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1540. K4M281633F-RE Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1541. K4M281633H Samsung - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1542. K4M281633H-RF1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1543. K4M281633H-RF1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1544. K4M281633H-RF75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1545. K4M281633H-RG1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1546. K4M281633H-RG1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1547. K4M281633H-RG75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1548. K4M281633H-RL1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1549. K4M281633H-RL1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1550. K4M281633H-RL75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1551. K4M281633H-RN1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1552. K4M281633H-RN1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1553. K4M281633H-RN75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1554. K4M28163LF Samsung - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1555. K4M28163LF-C Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1556. K4M28163LF-L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1557. K4M28163LF-N Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1558. K4M28163LF-R(B)E/N/S/C/L/R1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1559. K4M28163LF-R(B)E/N/S/C/L/R1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1560. K4M28163LF-R(B)E/N/S/C/L/R75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1561. K4M28163LF-R1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1562. K4M28163LF-R75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1563. K4M28163LF-RE Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1564. K4M28163LF-S Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1565. K4M28163PD Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1566. K4M28163PD-BG Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1567. K4M28163PD-BS Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1568. K4M28163PD-RBG/S Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1569. K4M28163PD-RG Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1570. K4M28163PF Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1571. K4M28163PF-F75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1572. K4M28163PF-R Samsung - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1573. K4M28163PF-R(B)G/F1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1574. K4M28163PF-R(B)G/F90 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1575. K4M28163PF-RBGF75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1576. K4M28163PF-RG Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1577. K4M28323PH-F Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1578. K4M28323PH-FC/F Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1579. K4M28323PH-FE/G Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1580. K4M28323PH-FHE/G Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1581. K4M511533E Samsung - Mobile-SDRAM
  1582. K4M511533E-C Samsung - Mobile-SDRAM
  1583. K4M511533E-F1H Samsung - Mobile-sdram
  1584. K4M511533E-F1L Samsung - Mobile-SDRAM
  1585. K4M511533E-F75 Samsung - Mobile-SDRAM
  1586. K4M511533E-L Samsung - Mobile-SDRAM
  1587. K4M511533E-Y Samsung - Mobile-SDRAM
  1588. K4M511533E-YC Samsung - Mobile-SDRAM
  1589. K4M511533E-YP Samsung - Mobile-SDRAM
  1590. K4M511533E-YPC Samsung - Mobile-SDRAM
  1591. K4M511633E Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1592. K4M511633E-C Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1593. K4M511633E-F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1594. K4M511633E-F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1595. K4M511633E-F75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1596. K4M511633E-L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1597. K4M511633E-P Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1598. K4M511633E-Y Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1599. K4M51163LE Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1600. K4M51163LE-F Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1601. K4M51163LE-L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1602. K4M51163LE-YC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1603. K4M51163LE-YF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1604. K4M51163LE-YL Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1605. K4M51163LE-YPF1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1606. K4M51163LE-YPF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1607. K4M51163LE-YPL Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1608. K4M51163PC-R Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1609. K4M51163PC-RBC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1610. K4M51163PC-RBE Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1611. K4M51163PC-RBF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1612. K4M51163PC-RBF75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1613. K4M51163PC-RBF90 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1614. K4M51163PC-RBG Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1615. K4M51163PC-RC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1616. K4M51163PC-RE Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1617. K4M51163PC-RF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1618. K4M51163PC-RF75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1619. K4M51163PC-RF90 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1620. K4M51163PC-RG Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1621. K4M513233E Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1622. K4M513233E-F1H Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1623. K4M513233E-F1L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1624. K4M513233E-F75 Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1625. K4M513233E-L Samsung - 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
  1626. K4M513233E-MC Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1627. K4M513233E-MEC Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1628. K4M51323LC Samsung - Mobile-sdram
  1629. K4M51323LE-F1L Samsung - 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
  1630. K4M51323LE-L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1631. K4M51323LE-M Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1632. K4M51323LE-MC Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1633. K4M561633G Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1634. K4M561633G-RBF1H Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1635. K4M561633G-RBF1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1636. K4M561633G-RBF75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1637. K4M561633G-RBG Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1638. K4M561633G-RBL Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1639. K4M561633G-RBN Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1640. K4M561633G-RF1H Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1641. K4M561633G-RF1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1642. K4M561633G-RF75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1643. K4M561633G-RG Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1644. K4M561633G-RL Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1645. K4M561633G-RN Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1646. K4M56163PE-F90 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1647. K4M56163PE-R Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1648. K4M56163PE-RG Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1649. K4M563233D Samsung - 8mx32 Mobile Sdram 90fbga
  1650. K4M563233D-MEE/N/I/P Samsung - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1651. K4M563233D-MEE/N/I/P1L Samsung - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1652. K4M563233D-MEE/N/I/P80 Samsung - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1653. K4M563233E Samsung - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
  1654. K4M563233E-C Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1655. K4M563233E-E Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1656. K4M563233E-F1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1657. K4M563233E-F1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1658. K4M563233E-F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1659. K4M563233E-F80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1660. K4M563233E-G Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1661. K4M563233E-L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1662. K4M563233E-M Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1663. K4M563233E-N Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1664. K4M56323LD Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1665. K4M56323LD-MEG/S Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1666. K4M56323LD-MEG/S1H Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1667. K4M56323LD-MEG/S1L Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1668. K4M56323LD-MEG/S80 Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1669. K4M56323LE Samsung - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
  1670. K4M56323LE-EC1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1671. K4M56323LE-EC1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1672. K4M56323LE-EC80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1673. K4M56323LE-EE1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1674. K4M56323LE-EE1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1675. K4M56323LE-EE80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1676. K4M56323LE-EL1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1677. K4M56323LE-EL1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1678. K4M56323LE-EL80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1679. K4M56323LE-EN1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1680. K4M56323LE-EN1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1681. K4M56323LE-EN80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1682. K4M56323LE-ER1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1683. K4M56323LE-ER1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1684. K4M56323LE-ER80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1685. K4M56323LE-ES1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1686. K4M56323LE-ES1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1687. K4M56323LE-ES80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1688. K4M56323LE-MC1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1689. K4M56323LE-MC1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1690. K4M56323LE-MC80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1691. K4M56323LE-ME1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1692. K4M56323LE-ME1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1693. K4M56323LE-ME80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1694. K4M56323LE-ML1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1695. K4M56323LE-ML1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1696. K4M56323LE-ML80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1697. K4M56323LE-MN1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1698. K4M56323LE-MN1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1699. K4M56323LE-MN80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1700. K4M56323LE-MR1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1701. K4M56323LE-MR1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1702. K4M56323LE-MR80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1703. K4M56323LE-MS1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1704. K4M56323LE-MS1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1705. K4M56323LE-MS80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1706. K4M56323PG-F Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1707. K4M56323PG-F Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1708. K4M56323PG-FC/F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1709. K4M56323PG-FE/G75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1710. K4M56323PG-FHE/G75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1711. K4M64163PH Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  1712. K4M64163PH-R(B)G/F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1713. K4M64163PH-R(B)G/F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1714. K4M64163PH-R(B)G/F90 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1715. K4M64163PH-RBF1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  1716. K4M64163PH-RBF75 Samsung - 1m X 16bit X 4 Banks Mobile Sdram In 54csp
  1717. K4M64163PH-RBF90 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  1718. K4M64163PH-RF1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  1719. K4M64163PH-RF75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  1720. K4M64163PH-RF90 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  1721. K4M64163PH-RG Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  1722. K4M64163PK Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1723. K4M64163PK-BE75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1724. K4M64163PK-RE75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1725. K4M64163PK-RG75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1726. K4H561638A-TLA0 Samsung - 128Mb DDR SDRAM
  1727. K4H561638A-TLA2 Samsung - 128Mb DDR SDRAM
  1728. K4H561638A-TLB0 Samsung - 128Mb DDR SDRAM
  1729. K4H561638B Samsung - K4H560438B 256Mb DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/DDR266
  1730. K4H561638B-TCA0 Samsung - 128Mb DDR SDRAM
  1731. K4H561638B-TCA2 Samsung - 128Mb DDR SDRAM
  1732. K4H561638B-TCB0 Samsung - 128Mb DDR SDRAM
  1733. K4H561638B-TLA0 Samsung - 128Mb DDR SDRAM
  1734. K4H561638B-TLA2 Samsung - 128Mb DDR SDRAM
  1735. K4H561638B-TLB0 Samsung - 128Mb DDR SDRAM
  1736. K4H561638C-TCA0 Samsung - 128Mb DDR SDRAM
  1737. K4H561638C-TCA2 Samsung - 128Mb DDR SDRAM
  1738. K4H561638C-TCB0 Samsung - 128Mb DDR SDRAM
  1739. K4H561638C-TLA0 Samsung - 128Mb DDR SDRAM
  1740. K4H561638C-TLA2 Samsung - 128Mb DDR SDRAM
  1741. K4H561638C-TLB0 Samsung - 128Mb DDR SDRAM
  1742. K4H561638D Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1743. K4H561638D-GCA2 Samsung - DDR 256Mb
  1744. K4H561638D-GCB0 Samsung - DDR 256Mb
  1745. K4H561638D-GCB3 Samsung - DDR 256Mb
  1746. K4H561638D-GLA2 Samsung - DDR 256Mb
  1747. K4H561638D-GLB0 Samsung - DDR 256Mb
  1748. K4H561638D-GLB3 Samsung - DDR 256Mb
  1749. K4H561638D-TCA0 Samsung - 128Mb DDR SDRAM
  1750. K4H561638D-TCA2 Samsung - 128Mb DDR SDRAM
  1751. K4H561638D-TCB0 Samsung - 128Mb DDR SDRAM
  1752. K4H561638D-TCC4 Samsung - 256Mb D-die DDR400 SDRAM Specification
  1753. K4H561638D-TCCC Samsung - 256Mb D-die DDR400 SDRAM Specification
  1754. K4H561638D-TC/LA0 Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1755. K4H561638D-TC/LA2 Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1756. K4H561638D-TC/LB0 Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1757. K4H561638D-TC/LB3 Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  1758. K4H561638D-TLA0 Samsung - 128Mb DDR SDRAM
  1759. K4H561638D-TLA2 Samsung - 128Mb DDR SDRAM
  1760. K4H561638D-TLB0 Samsung - 128Mb DDR SDRAM
  1761. K4H561638E-TCA0 Samsung - 128Mb DDR SDRAM
  1762. K4H561638E-TCA2 Samsung - 128Mb DDR SDRAM
  1763. K4H561638E-TCB0 Samsung - 128Mb DDR SDRAM
  1764. K4H561638E-TLA0 Samsung - 128Mb DDR SDRAM
  1765. K4H561638E-TLA2 Samsung - 128Mb DDR SDRAM
  1766. K4H561638E-TLB0 Samsung - 128Mb DDR SDRAM
  1767. K4H561638F Samsung - 256Mb F-die DDR SDRAM Specification
  1768. K4H561638F-TCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  1769. K4H561638F-TCCC Samsung - 256Mb F-die DDR400 SDRAM Specification
  1770. K4H561638F-TC/LA2 Samsung - K4H561638F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  1771. K4H561638F-TC/LAA Samsung - K4H561638F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  1772. K4H561638F-TC/LB0 Samsung - K4H561638F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  1773. K4H561638F-TC/LB3 Samsung - K4H561638F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  1774. K4H561638F-UC Samsung - 256mb F-die Ddr Sdram Specification
  1775. K4H561638F-UCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  1776. K4H561638F-UCCC Samsung - 256Mb F-die DDR400 SDRAM Specification
  1777. K4H561638M-TCA0 Samsung - 128Mb DDR SDRAM
  1778. K4H561638M-TCA2 Samsung - 128Mb DDR SDRAM
  1779. K4H561638M-TCB0 Samsung - 128Mb DDR SDRAM
  1780. K4H561638M-TLA0 Samsung - 128Mb DDR SDRAM
  1781. K4H561638M-TLA2 Samsung - 128Mb DDR SDRAM
  1782. K4H561638M-TLB0 Samsung - 128Mb DDR SDRAM
  1783. K4H563238A-TCA0 Samsung - 128Mb DDR SDRAM
  1784. K4H563238A-TCA2 Samsung - 128Mb DDR SDRAM
  1785. K4H563238A-TCB0 Samsung - 128Mb DDR SDRAM
  1786. K4H563238A-TLA0 Samsung - 128Mb DDR SDRAM
  1787. K4H563238A-TLA2 Samsung - 128Mb DDR SDRAM
  1788. K4H563238A-TLB0 Samsung - 128Mb DDR SDRAM
  1789. K4H563238B-TCA0 Samsung - 128Mb DDR SDRAM
  1790. K4H563238B-TCA2 Samsung - 128Mb DDR SDRAM
  1791. K4H563238B-TCB0 Samsung - 128Mb DDR SDRAM
  1792. K4H563238B-TLA0 Samsung - 128Mb DDR SDRAM
  1793. K4H563238B-TLA2 Samsung - 128Mb DDR SDRAM
  1794. K4H563238B-TLB0 Samsung - 128Mb DDR SDRAM
  1795. K4H563238C-TCA0 Samsung - 128Mb DDR SDRAM
  1796. K4H563238C-TCA2 Samsung - 128Mb DDR SDRAM
  1797. K4H563238C-TCB0 Samsung - 128Mb DDR SDRAM
  1798. K4H563238C-TLA0 Samsung - 128Mb DDR SDRAM
  1799. K4H563238C-TLA2 Samsung - 128Mb DDR SDRAM
  1800. K4H563238C-TLB0 Samsung - 128Mb DDR SDRAM
  1801. K4H563238D-TCA0 Samsung - 128Mb DDR SDRAM
  1802. K4H563238D-TCA2 Samsung - 128Mb DDR SDRAM
  1803. K4H563238D-TCB0 Samsung - 128Mb DDR SDRAM
  1804. K4H563238D-TLA0 Samsung - 128Mb DDR SDRAM
  1805. K4H563238D-TLA2 Samsung - 128Mb DDR SDRAM
  1806. K4H563238D-TLB0 Samsung - 128Mb DDR SDRAM
  1807. K4H563238E-TCA0 Samsung - 128Mb DDR SDRAM
  1808. K4H563238E-TCA2 Samsung - 128Mb DDR SDRAM
  1809. K4H563238E-TCB0 Samsung - 128Mb DDR SDRAM
  1810. K4H563238E-TLA0 Samsung - 128Mb DDR SDRAM
  1811. K4H563238E-TLA2 Samsung - 128Mb DDR SDRAM
  1812. K4H563238E-TLB0 Samsung - 128Mb DDR SDRAM
  1813. K4H563238M-TCA0 Samsung - 128Mb DDR SDRAM
  1814. K4H563238M-TCA2 Samsung - 128Mb DDR SDRAM
  1815. K4H563238M-TCB0 Samsung - 128Mb DDR SDRAM
  1816. K4H563238M-TLA0 Samsung - 128Mb DDR SDRAM
  1817. K4H563238M-TLA2 Samsung - 128Mb DDR SDRAM
  1818. K4H563238M-TLB0 Samsung - 128Mb DDR SDRAM
  1819. K4H640438A-TCA0 Samsung - 128Mb DDR SDRAM
  1820. K4H640438A-TCA2 Samsung - 128Mb DDR SDRAM
  1821. K4H640438A-TCB0 Samsung - 128Mb DDR SDRAM
  1822. K4H640438A-TLA0 Samsung - 128Mb DDR SDRAM
  1823. K4H640438A-TLA2 Samsung - 128Mb DDR SDRAM
  1824. K4H640438A-TLB0 Samsung - 128Mb DDR SDRAM
  1825. K4H640438B-TCA0 Samsung - 128Mb DDR SDRAM
  1826. K4H640438B-TCA2 Samsung - 128Mb DDR SDRAM
  1827. K4H640438B-TCB0 Samsung - 128Mb DDR SDRAM
  1828. K4H640438B-TLA0 Samsung - 128Mb DDR SDRAM
  1829. K4H640438B-TLA2 Samsung - 128Mb DDR SDRAM
  1830. K4H640438B-TLB0 Samsung - 128Mb DDR SDRAM
  1831. K4H640438C-TCA0 Samsung - 128Mb DDR SDRAM
  1832. K4H640438C-TCA2 Samsung - 128Mb DDR SDRAM
  1833. K4H640438C-TCB0 Samsung - 128Mb DDR SDRAM
  1834. K4H640438C-TLA0 Samsung - 128Mb DDR SDRAM
  1835. K4H640438C-TLA2 Samsung - 128Mb DDR SDRAM
  1836. K4H640438C-TLB0 Samsung - 128Mb DDR SDRAM
  1837. K4H640438D-TCA0 Samsung - 128Mb DDR SDRAM
  1838. K4H640438D-TCA2 Samsung - 128Mb DDR SDRAM
  1839. K4H640438D-TCB0 Samsung - 128Mb DDR SDRAM
  1840. K4H640438D-TLA0 Samsung - 128Mb DDR SDRAM
  1841. K4H640438D-TLA2 Samsung - 128Mb DDR SDRAM
  1842. K4H640438D-TLB0 Samsung - 128Mb DDR SDRAM
  1843. K4H640438E-TCA0 Samsung - 128Mb DDR SDRAM
  1844. K4H640438E-TCA2 Samsung - 128Mb DDR SDRAM
  1845. K4H640438E-TCB0 Samsung - 128Mb DDR SDRAM
  1846. K4H640438E-TLA0 Samsung - 128Mb DDR SDRAM
  1847. K4H640438E-TLA2 Samsung - 128Mb DDR SDRAM
  1848. K4H640438E-TLB0 Samsung - 128Mb DDR SDRAM
  1849. K4H640438M-TCA0 Samsung - 128Mb DDR SDRAM
  1850. K4H640438M-TCA2 Samsung - 128Mb DDR SDRAM
  1851. K4H640438M-TCB0 Samsung - 128Mb DDR SDRAM
  1852. K4H640438M-TLA0 Samsung - 128Mb DDR SDRAM
  1853. K4H640438M-TLA2 Samsung - 128Mb DDR SDRAM
  1854. K4H640438M-TLB0 Samsung - 128Mb DDR SDRAM
  1855. K4H640838A-TCA0 Samsung - 128Mb DDR SDRAM
  1856. K4H640838A-TCA2 Samsung - 128Mb DDR SDRAM
  1857. K4H640838A-TCB0 Samsung - 128Mb DDR SDRAM
  1858. K4H640838A-TLA0 Samsung - 128Mb DDR SDRAM
  1859. K4H640838A-TLA2 Samsung - 128Mb DDR SDRAM
  1860. K4H640838A-TLB0 Samsung - 128Mb DDR SDRAM
  1861. K4H640838B-TCA0 Samsung - 128Mb DDR SDRAM
  1862. K4H640838B-TCA2 Samsung - 128Mb DDR SDRAM
  1863. K4H640838B-TCB0 Samsung - 128Mb DDR SDRAM
  1864. K4H640838B-TLA0 Samsung - 128Mb DDR SDRAM
  1865. K4H640838B-TLA2 Samsung - 128Mb DDR SDRAM
  1866. K4H640838B-TLB0 Samsung - 128Mb DDR SDRAM
  1867. K4H640838C-TCA0 Samsung - 128Mb DDR SDRAM
  1868. K4H640838C-TCA2 Samsung - 128Mb DDR SDRAM
  1869. K4H640838C-TCB0 Samsung - 128Mb DDR SDRAM
  1870. K4H640838C-TLA0 Samsung - 128Mb DDR SDRAM
  1871. K4H640838C-TLA2 Samsung - 128Mb DDR SDRAM
  1872. K4H640838C-TLB0 Samsung - 128Mb DDR SDRAM
  1873. K4H640838D-TCA0 Samsung - 128Mb DDR SDRAM
  1874. K4H640838D-TCA2 Samsung - 128Mb DDR SDRAM
  1875. K4H640838D-TCB0 Samsung - 128Mb DDR SDRAM
  1876. K4H640838D-TLA0 Samsung - 128Mb DDR SDRAM
  1877. K4H640838D-TLA2 Samsung - 128Mb DDR SDRAM
  1878. K4H640838D-TLB0 Samsung - 128Mb DDR SDRAM
  1879. K4H640838E-TCA0 Samsung - 128Mb DDR SDRAM
  1880. K4H640838E-TCA2 Samsung - 128Mb DDR SDRAM
  1881. K4H640838E-TCB0 Samsung - 128Mb DDR SDRAM
  1882. K4H640838E-TLA0 Samsung - 128Mb DDR SDRAM
  1883. K4H640838E-TLA2 Samsung - 128Mb DDR SDRAM
  1884. K4H640838E-TLB0 Samsung - 128Mb DDR SDRAM
  1885. K4H640838M-TCA0 Samsung - 128Mb DDR SDRAM
  1886. K4H640838M-TCA2 Samsung - 128Mb DDR SDRAM
  1887. K4H640838M-TCB0 Samsung - 128Mb DDR SDRAM
  1888. K4H640838M-TLA0 Samsung - 128Mb DDR SDRAM
  1889. K4H640838M-TLA2 Samsung - 128Mb DDR SDRAM
  1890. K4H640838M-TLB0 Samsung - 128Mb DDR SDRAM
  1891. K4H641638A-TCA0 Samsung - 128Mb DDR SDRAM
  1892. K4H641638A-TCA2 Samsung - 128Mb DDR SDRAM
  1893. K4H641638A-TCB0 Samsung - 128Mb DDR SDRAM
  1894. K4H641638A-TLA0 Samsung - 128Mb DDR SDRAM
  1895. K4H641638A-TLA2 Samsung - 128Mb DDR SDRAM
  1896. K4H641638A-TLB0 Samsung - 128Mb DDR SDRAM
  1897. K4H641638B-TCA0 Samsung - 128Mb DDR SDRAM
  1898. K4H641638B-TCA2 Samsung - 128Mb DDR SDRAM
  1899. K4H641638B-TCB0 Samsung - 128Mb DDR SDRAM
  1900. K4H641638B-TLA0 Samsung - 128Mb DDR SDRAM
  1901. K4H641638B-TLA2 Samsung - 128Mb DDR SDRAM
  1902. K4H641638B-TLB0 Samsung - 128Mb DDR SDRAM
  1903. K4H641638C-TCA0 Samsung - 128Mb DDR SDRAM
  1904. K4H641638C-TCA2 Samsung - 128Mb DDR SDRAM
  1905. K4H641638C-TCB0 Samsung - 128Mb DDR SDRAM
  1906. K4H641638C-TLA0 Samsung - 128Mb DDR SDRAM
  1907. K4H641638C-TLA2 Samsung - 128Mb DDR SDRAM
  1908. K4H641638C-TLB0 Samsung - 128Mb DDR SDRAM
  1909. K4H641638D-TCA0 Samsung - 128Mb DDR SDRAM
  1910. K4H641638D-TCA2 Samsung - 128Mb DDR SDRAM
  1911. K4H641638D-TCB0 Samsung - 128Mb DDR SDRAM
  1912. K4H641638D-TLA0 Samsung - 128Mb DDR SDRAM
  1913. K4H641638D-TLA2 Samsung - 128Mb DDR SDRAM
  1914. K4H641638D-TLB0 Samsung - 128Mb DDR SDRAM
  1915. K4H641638E-TCA0 Samsung - 128Mb DDR SDRAM
  1916. K4H641638E-TCA2 Samsung - 128Mb DDR SDRAM
  1917. K4H641638E-TCB0 Samsung - 128Mb DDR SDRAM
  1918. K4H641638E-TLA0 Samsung - 128Mb DDR SDRAM
  1919. K4H641638E-TLA2 Samsung - 128Mb DDR SDRAM
  1920. K4H641638E-TLB0 Samsung - 128Mb DDR SDRAM
  1921. K4H641638M-TCA0 Samsung - 128Mb DDR SDRAM
  1922. K4H641638M-TCA2 Samsung - 128Mb DDR SDRAM
  1923. K4H641638M-TCB0 Samsung - 128Mb DDR SDRAM
  1924. K4H641638M-TLA0 Samsung - 128Mb DDR SDRAM
  1925. K4H641638M-TLA2 Samsung - 128Mb DDR SDRAM
  1926. K4H641638M-TLB0 Samsung - 128Mb DDR SDRAM
  1927. K4H643238A-TCA0 Samsung - 128Mb DDR SDRAM
  1928. K4H643238A-TCA2 Samsung - 128Mb DDR SDRAM
  1929. K4H643238A-TCB0 Samsung - 128Mb DDR SDRAM
  1930. K4H643238A-TLA0 Samsung - 128Mb DDR SDRAM
  1931. K4H643238A-TLA2 Samsung - 128Mb DDR SDRAM
  1932. K4H643238A-TLB0 Samsung - 128Mb DDR SDRAM
  1933. K4H643238B-TCA0 Samsung - 128Mb DDR SDRAM
  1934. K4H643238B-TCA2 Samsung - 128Mb DDR SDRAM
  1935. K4H643238B-TCB0 Samsung - 128Mb DDR SDRAM
  1936. K4H643238B-TLA0 Samsung - 128Mb DDR SDRAM
  1937. K4H643238B-TLA2 Samsung - 128Mb DDR SDRAM
  1938. K4H643238B-TLB0 Samsung - 128Mb DDR SDRAM
  1939. K4H643238C-TCA0 Samsung - 128Mb DDR SDRAM
  1940. K4H643238C-TCA2 Samsung - 128Mb DDR SDRAM
  1941. K4H643238C-TCB0 Samsung - 128Mb DDR SDRAM
  1942. K4H643238C-TLA0 Samsung - 128Mb DDR SDRAM
  1943. K4H643238C-TLA2 Samsung - 128Mb DDR SDRAM
  1944. K4H643238C-TLB0 Samsung - 128Mb DDR SDRAM
  1945. K4H643238D-TCA0 Samsung - 128Mb DDR SDRAM
  1946. K4H643238D-TCA2 Samsung - 128Mb DDR SDRAM
  1947. K4H643238D-TCB0 Samsung - 128Mb DDR SDRAM
  1948. K4H643238D-TLA0 Samsung - 128Mb DDR SDRAM
  1949. K4H643238D-TLA2 Samsung - 128Mb DDR SDRAM
  1950. K4H643238D-TLB0 Samsung - 128Mb DDR SDRAM
  1951. K4H643238E-TCA0 Samsung - 128Mb DDR SDRAM
  1952. K4H643238E-TCA2 Samsung - 128Mb DDR SDRAM
  1953. K4H643238E-TCB0 Samsung - 128Mb DDR SDRAM
  1954. K4H643238E-TLA0 Samsung - 128Mb DDR SDRAM
  1955. K4H643238E-TLA2 Samsung - 128Mb DDR SDRAM
  1956. K4H643238E-TLB0 Samsung - 128Mb DDR SDRAM
  1957. K4H643238M-TCA0 Samsung - 128Mb DDR SDRAM
  1958. K4H643238M-TCA2 Samsung - 128Mb DDR SDRAM
  1959. K4H643238M-TCB0 Samsung - 128Mb DDR SDRAM
  1960. K4H643238M-TLA0 Samsung - 128Mb DDR SDRAM
  1961. K4H643238M-TLA2 Samsung - 128Mb DDR SDRAM
  1962. K4H643238M-TLB0 Samsung - 128Mb DDR SDRAM
  1963. K4J52324QC Samsung - 512Mbit GDDR3 SDRAM
  1964. K4J52324QC-BC14 Samsung - 512mbit Gddr3 Sdram
  1965. K4J52324QC-BC16 Samsung - 512Mbit GDDR3 SDRAM
  1966. K4J52324QC-BC20 Samsung - 512Mbit GDDR3 SDRAM
  1967. K4J52324QC-BJ12 Samsung - 512Mbit GDDR3 SDRAM
  1968. K4J52324QC-BJ14 Samsung - 512Mbit GDDR3 SDRAM
  1969. K4J55323QF-GC15 Samsung - 256mbit Gddr3 Sdram
  1970. K4J55323QF-GC16 Samsung - 256Mbit GDDR3 SDRAM
  1971. K4J55323QG Samsung - 256Mbit GDDR3 SDRAM
  1972. K4J55323QG-BC12 Samsung - 256Mbit GDDR3 SDRAM
  1973. K4J55323QG-BC14 Samsung - 256Mbit GDDR3 SDRAM
  1974. K4J55323QG-BC16 Samsung - 256Mbit GDDR3 SDRAM
  1975. K4J55323QG-BC20 Samsung - 256mbit Gddr3 Sdram
  1976. K5P2880YCM Samsung - Multi-chip Package Memory 128m Bit 16mx8 Nand Flash Memory / 8m Bit 1mx8/512kx16 Full Cmos Sram
  1977. K5P2880YCM-T085 Samsung - K5P2880YCM 128M Bit (16Mx8) NAND Flash Memory /8M Bit (1Mx8/512Kx16) Full CMOS SRAM ; Combination = 128M NAND+8M Lpsram ; NAND Speed(Random/Serial) = 10us/50ns ; Package = 69TBGA ; PKG Size(mm) = 8x13x1.2 ; Production Status = Mass Production ; Comments = -
  1978. K5Q6432YCM Samsung - K5Q6432YCM 64M Bit (8Mx8) NAND Flash Memory / 32M Bit (2Mx16) Utram ; Combination = 64M NAND+32M Utram ; NAND Speed(Random/Serial) = 10us/50ns ; Package = 69TBGA ; PKG Size(mm) = 8x13x1.2 ; Production Status = Mass Production ; Comments = -
  1979. K5Q6432YCM-T010 Samsung - K5Q6432YCM 64M Bit (8Mx8) NAND Flash Memory / 32M Bit (2Mx16) Utram ; Combination = 64M NAND+32M Utram ; NAND Speed(Random/Serial) = 10us/50ns ; Package = 69TBGA ; PKG Size(mm) = 8x13x1.2 ; Production Status = Mass Production ; Comments = -
  1980. K5S3216Y0A Samsung - K5S3216Y0A 32M Bit (2Mx16 Bit) Uni-transistor RAM / 16M(1Mx16 Bit) Full CMOS SRAM ; Combination = 32M UtRAM+16M LP SRAM ; Speed = 85(UtRAM),70(LP SRAM) ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  1981. K5S3216Y0A-T370 Samsung - K5S3216Y0A 32M Bit (2Mx16 Bit) Uni-transistor RAM / 16M(1Mx16 Bit) Full CMOS SRAM ; Combination = 32M UtRAM+16M LP SRAM ; Speed = 85(UtRAM),70(LP SRAM) ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  1982. K5S3216Y0A-T385 Samsung - K5S3216Y0A 32M Bit (2Mx16 Bit) Uni-transistor RAM / 16M(1Mx16 Bit) Full CMOS SRAM ; Combination = 32M UtRAM+16M LP SRAM ; Speed = 85(UtRAM),70(LP SRAM) ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  1983. K5S3216Y0M Samsung -
  1984. K5T6432YBM Samsung - K5T6432YBM 64M Bit (4Mx16) Four Bank Nor Flash Memory / 32M Bit (2Mx16) Utram ; Combination = 64M NOR+32M Utram ; Nor Speed(ns) = 85 ; Boot Block = Bottom ; Bank = Multi ; Package = 81TBGA ; PKG Size(mm) = 10.8x10.4x1.2 ; Production Status = Mass Production ; Comments = -
  1985. K5T6432YT Samsung - Multi-chip Package Memory 64m Bit 4mx16 Four Bank Nor Flash Memory / 32m Bit 2mx16 Utram
  1986. K5D5657ACM Samsung - 256mb Nand and 256mb Mobile Sdram
  1987. K5D5657ACM-F015 Samsung - 256Mb NAND and 256Mb Mobile SDRAM
  1988. K5D5657DCM-F015 Samsung - Mcp Specification Of 256mb Nand and 256mb Mobile Sdram
  1989. K5D5657DCM-F0CL Samsung - MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
  1990. K5L5628JBM Samsung - 256m Bit (16m X16) Synchronous Burst, Multi Bank Nor Flash / 128m Bit(8m X16) Synchronous Burst Utram
  1991. K5L5628JBM-DH18 Samsung - 256M Bit (16M x16) Synchronous Burst, Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
  1992. K5L5628JTM Samsung - 256M Bit (16M x16) Synchronous Burst, Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
  1993. K5L5628JTM-DH18 Samsung - 256M Bit (16M x16) Synchronous Burst, Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
  1994. K4N26323AE Samsung - 128Mbit GDDR2 SDRAM
  1995. K4N26323AE-GC Samsung - K4N26323AE 1M X 32Bit X 4 Banks GDDR2 Synchronous DRAM With Differential Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 500,450,400 ; Refresh = 4K/32m ; Package = 144FBGA ; Interface = SSTL18 ; Production Status = Mass Production ; Comments = -
  1996. K4N26323AE-GC20 Samsung - 128mbit Gddr2 Sdram
  1997. K4N26323AE-GC22 Samsung - 128Mbit GDDR2 SDRAM
  1998. K4N26323AE-GC25 Samsung - 128Mbit GDDR2 SDRAM
  1999. K5A3240YBA Samsung - K5A3240YBA 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 80,85,90 ; Boot Block = Bottom ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Eol ; Comments = -
  2000. K5A3240YBB Samsung - K5A3240YBB 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 70 ; Boot Block = Bottom ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2001. K5A3240YBC-T755 Samsung - Multi-chip Package Memory 32m Bit (4mx8/2mx16) Dual Bank Nor Flash Memory / 4m(512kx8/256kx16) Full Cmos Sram
  2002. K5A3240YBC-T855 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2003. K5A3240YT Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2004. K5A3240YTA Samsung - K5A3240YTA 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 80,85,90 ; Boot Block = Top ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Eol ; Comments = -
  2005. K5A3240YTB Samsung - K5A3240YTB 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 70 ; Boot Block = Top ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2006. K5A3240YTC-T755 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2007. K5A3240YTC-T855 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2008. K5A3280YBA Samsung - K5A3280YBA 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM ; Combination = 32M NOR+8M Lpsram ; Nor Speed(ns) = 80,85,90 ; Boot Block = Bottom ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Eol ; Comments = -
  2009. K5A3280YBB Samsung - K5A3280YBB 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM ; Combination = 32M NOR+8M Lpsram ; Nor Speed(ns) = 70 ; Boot Block = Bottom ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2010. K5A3280YBC-T755 Samsung - MCP MEMORY
  2011. K5A3280YBC-T855 Samsung - MCP MEMORY
  2012. K5A3280YTA Samsung - K5A3280YTA 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM ; Combination = 32M NOR+8M Lpsram ; Nor Speed(ns) = 80,85,90 ; Boot Block = Top ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Eol ; Comments = -
  2013. K5A3280YTB Samsung - K5A3280YTB 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM ; Combination = 32M NOR+8M Lpsram ; Nor Speed(ns) = 70 ; Boot Block = Top ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2014. K5A3280YTC-T755 Samsung - MCP MEMORY
  2015. K5A3280YTC-T855 Samsung - Mcp Memory
  2016. K5A3340YBC-T755 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2017. K5A3340YBC-T855 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2018. K5A3340YT Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2019. K5A3340YTC-T755 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2020. K5A3340YTC-T855 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2021. K5A3380YBC-T755 Samsung - MCP MEMORY
  2022. K5A3380YBC-T855 Samsung - MCP MEMORY
  2023. K5A3380YTC-T755 Samsung - MCP MEMORY
  2024. K5A3380YTC-T855 Samsung - MCP MEMORY
  2025. K5A3X40YTC Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2026. K5A3X80YTC Samsung - MCP MEMORY
  2027. K5B1620YBA Samsung - K5B1620YBA 16M Bit (1Mx16) Boot Block Nor Flash Memory / 2M(128Kx16) Full CMOS SRAM ; Combination = 16M NOR+2M Lpsram ; Nor Speed(ns) = 90 ; Boot Block = Bottom ; Bank = Uniform ; Package = 66TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2028. K5B1620YTA Samsung - K5B1620YTA 16M Bit (1Mx16) Boot Block Nor Flash Memory / 2M(128Kx16) Full CMOS SRAM ; Combination = 16M NOR+2M Lpsram ; Nor Speed(ns) = 90 ; Boot Block = Top ; Bank = Uniform ; Package = 66TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2029. K5B3241YBA Samsung - K5B3241YBA 32M Bit (2Mx16) Boot Block Nor Flash Memory / 4M(256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 90 ; Boot Block = Bottom ; Bank = Uniform ; Package = 66TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2030. K4N51163QC-ZC Samsung - 512Mbit gDDR2 SDRAM
  2031. K4N51163QC-ZC25 Samsung - 512mbit Gddr2 Sdram
  2032. K4N51163QC-ZC2A Samsung - 512Mbit gDDR2 SDRAM
  2033. K4N51163QC-ZC33 Samsung - 512Mbit gDDR2 SDRAM
  2034. K4N51163QC-ZC36 Samsung - 512Mbit gDDR2 SDRAM
  2035. K4N56163QF Samsung - 256mbit Gddr2 Sdram
  2036. K4N56163QF-GC Samsung - 256Mbit gDDR2 SDRAM
  2037. K4N56163QF-GC25 Samsung - 256Mbit gDDR2 SDRAM
  2038. K4N56163QF-GC30 Samsung - 256Mbit gDDR2 SDRAM
  2039. K4N56163QF-GC37 Samsung - 256Mbit gDDR2 SDRAM
  2040. K4P160411C Samsung - K4P160411C 4M X 4Bit CMOS Quad Cas DRAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page Q/c ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
  2041. K4P170411C Samsung - K4P170411C 4M X 4Bit CMOS Quad Cas DRAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page Q/c ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
  2042. K4Q160411C Samsung - K4Q160411C 4 X 4Bit CMOS Quad Cas DRAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo Q/c ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
  2043. K4Q170411C Samsung - K4Q170411C 4M X 4Bit CMOS Quad Cas DRAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo Q/c ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 24SOJ,26SOJ,24TSOP2,26TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
  2044. K4R271669A Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2045. K4R271669AM-CG6 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2046. K4R271669AM-CK7 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2047. K4R271669AM-CK8 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2048. K4R271669AN-CG6 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2049. K4R271669AN-CK7 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2050. K4R271669AN-CK8 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2051. K4R271669A-SbCK8 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2052. K4R271669A-SCxx Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  2053. K4R271669B Samsung - 256k X 16/18 Bit X 32s Banks Direct Rdramtm
  2054. K4R271669B-MCG6 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  2055. K4R271669B-MCK7 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  2056. K4R271669B-MCK8 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  2057. K4R271669B-N(M)CG6 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  2058. K4R271669B-N(M)CK7 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  2059. K4R271669B-Nb(M)CcK8 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  2060. K4R271669B-NbMCcK8 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = -
  2061. K4R271669B-NCG6 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  2062. K4R271669B-NCK7 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  2063. K4R271669B-NCK8 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  2064. K4R271669B-NMCG6 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = -
  2065. K4R271669B-NMCK7 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = -
  2066. K4R271669B-SbCK8 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  2067. K4R271669B-SCxx Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  2068. K4R271669D Samsung - 128Mbit RDRAM(D-die)
  2069. K4R271669D-RcCS8 Samsung - K4R271669D 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Eol ; Comments = Lead/leaded Free Pkg. Short Channel
  2070. K4R271669D-T Samsung - 128mbit Rdram(d-die)
  2071. K4R271669D-TbCS8 Samsung - K4R271669D 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Eol ; Comments = Lead/leaded Free Pkg. Short Channel
  2072. K4R271669D-TCS8 Samsung - 128Mbit RDRAM(D-die)
  2073. K4R271669E Samsung - 128mbit Rdram(e-die)
  2074. K4R271669E-RcCS8 Samsung - K4R271669E 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Mass Production ; Comments = Leaded/lead Free Pkg.+short Channel
  2075. K4R271669E-TbCS8 Samsung - K4R271669E 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Mass Production ; Comments = Leaded/lead Free Pkg.+short Channel
  2076. K4R271669F Samsung - 128mbit Rdram(f-die)
  2077. K4R271669F-TbCS8 Samsung - K4R271669F 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Mass Production(Q4,\'03) ; Comments = Lead Free Pkg.+short Channel
  2078. K4R441869A Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2079. K4R441869AM-CG6 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2080. K4R441869AM-CK7 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2081. K4R441869AM-CK8 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2082. K4R441869AN-CG6 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2083. K4R441869AN-CK7 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2084. K4R441869AN-CK8 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2085. K4R441869A-NMCG6 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2086. K4R441869A-NMCK7 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2087. K4R441869A-NMCK8 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  2088. K4R441869B Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  2089. K4R441869B-N(M)CG6 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  2090. K4R441869B-N(M)CK7 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  2091. K4R441869B-N(M)CK8 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  2092. K4R521669A Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  2093. K4R521669A-FbCcT9 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  2094. K4R521669A-FCK8 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  2095. K4R521669A-FCM8 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  2096. K4R521669A-FCM9 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  2097. K4R521669A-FCN9 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  2098. K4R571669A Samsung - K4R571669A, K4R881869A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = -
  2099. K4R571669A-FbCcM8 Samsung - K4R571669A, K4R881869A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = -
  2100. K4R571669A-FCK8 Samsung - K4R571669A, K4R881869A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = -
  2101. K4R571669D Samsung - 256/288mbit Rdram(d-die)
  2102. K4R571669D-FbCcT9 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2103. K4R571669D-FCK8 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2104. K4R571669D-FCM8 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2105. K4R571669D-FCM9 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2106. K4R571669D-FCN9 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2107. K4R571669M Samsung - Direct Rdram TM
  2108. K4R761869A Samsung - K4R761869A 1M X 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx18)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,400/40 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2109. K4R761869A-F Samsung - K4R761869A 1M X 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx18)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,400/40 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2110. K4R761869A-FbCcN1 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  2111. K4R761869A-FCM8 Samsung - 576mbit Rdram (a-die) 1m X 18bit X 32s Banks Direct Rdramtm
  2112. K4R761869A-FCT9 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  2113. K4R761869A-GCM8 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  2114. K4R761869A-GCN1 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  2115. K4R761869A-GCT9 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  2116. K4R881869 Samsung - 288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm
  2117. K4R881869A Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  2118. K4R881869A-FCK8 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  2119. K4R881869A-FCM8 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  2120. K4R881869A-FCM9 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  2121. K4R881869A-FCN9 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  2122. K4R881869A-FCT9 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  2123. K4R881869D Samsung - 256/288Mbit RDRAM(D-die)
  2124. K4R881869D-FCK8 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2125. K4R881869D-FCM8 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2126. K4R881869D-FCM9 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2127. K4R881869D-FCN9 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2128. K4R881869D-FCT9 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  2129. K4R881869M Samsung - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  2130. K4R881869M-NbCcG6 Samsung - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  2131. K4R881869M-NCG6 Samsung - K4R881869M Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 92uBGA ; Production Status = Eol ; Comments = Ecc
  2132. K4R881869M-NCK7 Samsung - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  2133. K4R881869M-NCK8 Samsung - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  2134. K6E0804C1C Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2135. K6E0804C1C-12 Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2136. K6E0804C1C-15 Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2137. K6E0804C1C-20 Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2138. K6E0804C1C-C Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2139. K6E0804C1C-J Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2140. K6E0804C1E Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2141. K6E0804C1E-10 Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2142. K6E0804C1E-12 Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2143. K6E0804C1E-15 Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2144. K6E0804C1E-C Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2145. K6E0804C1E-J Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2146. K6E0808C1C Samsung - 32Kx8 Bit High Speed CMOS Static RAM
  2147. K6E0808C1C-12 Samsung - 32kx8 Bit High Speed Cmos Static Ram
  2148. K6E0808C1C-15 Samsung - 32Kx8 Bit High Speed CMOS Static RAM
  2149. K6E0808C1C-20 Samsung - 32Kx8 Bit High Speed CMOS Static RAM
  2150. K6E0808C1C-C Samsung - 32Kx8 Bit High Speed CMOS Static RAM
  2151. K6E0808C1C-J Samsung - K6E0808C1C 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 165 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2152. K6E0808C1C-T Samsung - K6E0808C1C 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 165 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2153. K6E0808C1E Samsung - 32k X 8 Bit High-speed Cmos Static Ram
  2154. K6E0808C1E-10 Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2155. K6E0808C1E-12 Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2156. K6E0808C1E-15 Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2157. K6E0808C1E-C Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2158. K6E0808C1E-C1 Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2159. K6E0808C1E-C10 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2160. K6E0808C1E-C12 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2161. K6E0808C1E-C15 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2162. K6E0808C1E-C-L Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2163. K6E0808C1E-E-L Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2164. K6E0808C1E-E-P Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2165. K6E0808C1E-I Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2166. K6E0808C1E-I10 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2167. K6E0808C1E-I12 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2168. K6E0808C1E-I15 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2169. K6E0808C1E-I-P Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2170. K6E0808C1E-J Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2171. K6E0808C1E-L Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2172. K6E0808C1E-P Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2173. K6E0808C1E-T Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2174. K6E0808V1C Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2175. K6E0808V1C-15 Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2176. K6E0808V1C-17 Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2177. K6E0808V1C-C Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2178. K6E0808V1C-J Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2179. K6E0808V1C-T Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2180. K6E0808V1E Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2181. K6E0808V1E-12 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2182. K6E0808V1E-15 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2183. K6E0808V1E-20 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2184. K6E0808V1E-C12 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2185. K6E0808V1E-C15 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2186. K6E0808V1E-C20 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2187. K6E0808V1E-C-L Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2188. K6E0808V1E-E-L Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2189. K6E0808V1E-E-P Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2190. K6E0808V1E-I12 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2191. K6E0808V1E-I15 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2192. K6E0808V1E-I20 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2193. K6E0808V1E-I-P Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2194. K6E0808V1E-J Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2195. K6E0808V1E-T Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2196. K6E1004C1B Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2197. K6E1004C1B-15 Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2198. K6E1004C1B-20 Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2199. K6E1004C1B-B-L Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2200. K6E1004C1B-C-L Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2201. K6E1004C1B-J Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2202. K6E1008C1B Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2203. K6E1008C1B-15 Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2204. K6E1008C1B-20 Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2205. K6E1008C1B-C Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2206. K6E1008C1B-J Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2207. K6E1008C1B-S Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2208. K6F1008R2A Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2209. K6F1008R2A-FI10 Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2210. K6F1008R2A-FI70 Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2211. K6F1008R2A-I Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2212. K6F1008R2A-YI10 Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2213. K6F1008R2A-YI70 Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2214. K6F1008R2M Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2215. K6F1008R2M-C Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2216. K6F1008R2M-GC30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2217. K6F1008R2M-GI30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2218. K6F1008R2M-I Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2219. K6F1008R2M-TC30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2220. K6F1008R2M-TI30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2221. K6F1008R2M-YC30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2222. K6F1008R2M-YI30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2223. K6F1008R2M-ZI30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2224. K6F1008S2A Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2225. K6F1008S2A-FI10 Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2226. K6F1008S2A-FI70 Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2227. K6F1008S2A-I Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2228. K6F1008S2A-YI10 Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2229. K6F1008S2A-YI70 Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2230. K6F1008S2M Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2231. K6F1008S2M-C Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2232. K6F1008S2M-GC12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2233. K6F1008S2M-GC15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2234. K6F1008S2M-GI12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2235. K6F1008S2M-GI15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2236. K6F1008S2M-I Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2237. K6F1008S2M-TC12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2238. K6F1008S2M-TC15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2239. K6F1008S2M-TI12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2240. K6F1008S2M-TI15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2241. K6F1008S2M-YC12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2242. K6F1008S2M-YC15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2243. K6F1008S2M-YI12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2244. K6F1008S2M-YI15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2245. K6F1008S2M-ZI15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2246. K6F1008U2A Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2247. K6F1008U2A-FI10 Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2248. K6F1008U2A-FI70 Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2249. K6F1008U2A-I Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2250. K6F1008U2A-YI10 Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2251. K6F1008U2A-YI70 Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2252. K6F1008U2C Samsung - K6F1008U2C 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2253. K6F1008U2C-F Samsung - K6F1008U2C 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2254. K6F1008U2C-YF55 Samsung - K6F1008U2C 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2255. K6F1008U2C-YF70 Samsung - K6F1008U2C 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2256. K6F1008V2C Samsung - 128kx8 Bit Super Low Power and Low Voltage Cmos Static Ram
  2257. K6F1008V2C-F Samsung - 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
  2258. K6F1008V2C-YF55 Samsung - 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
  2259. K6F1008V2C-YF70 Samsung - 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
  2260. K6F1008V2M Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2261. K6F1008V2M-C Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2262. K6F1008V2M-GC70 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2263. K6F1008V2M-GC85 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2264. K6F1008V2M-GI70 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2265. K6F1008V2M-GI85 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2266. K6F1008V2M-I Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2267. K6F1008V2M-TC70 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2268. K6F1008V2M-TC85 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2269. K6F1008V2M-TI70 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2270. K6F1008V2M-TI85 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2271. K6F1016R3M Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2272. K6F1016R3M-C Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2273. K6F1016R3M-I Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2274. K6F1016R3M-TB30 Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2275. K6F1016R3M-TF30 Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2276. K6F1016R3M-ZF30 Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2277. K6F1016R4A Samsung - K6F1016R4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2278. K6F1016R4A-FI10 Samsung - K6F1016R4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2279. K6F1016R4A-FI70 Samsung - K6F1016R4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2280. K6F1016R4A-I Samsung - K6F1016R4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2281. K6F1016R4M Samsung - K6F1016R4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2282. K6F1016R4M-C Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2283. K6F1016R4M-I Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2284. K6F1016R4M-TB30 Samsung - K6F1016R4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2285. K6F1016R4M-TF30 Samsung - K6F1016R4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2286. K6F1016S3M Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2287. K6F1016S3M-C Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2288. K6F1016S3M-I Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2289. K6F1016S3M-TB12 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2290. K6F1016S3M-TB15 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2291. K6F1016S3M-TF12 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2292. K6F1016S3M-TF15 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2293. K6F1016S3M-ZF15 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2294. K6F1016S4A Samsung - K6F1016S4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2295. K6F1016S4A-FI10 Samsung - K6F1016S4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2296. K6F1016S4A-FI70 Samsung - K6F1016S4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2297. K6F1016S4A-I Samsung - K6F1016S4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2298. K6F1016S4B Samsung - K6F1016S4B 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2299. K6F1016S4B-F Samsung - K6F1016S4B 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2300. K6F1016S4B-FF70 Samsung - K6F1016S4B 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2301. K6F1016S4B-FF85 Samsung - K6F1016S4B 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2302. K6F1016S4M Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2303. K6F1016S4M-C Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2304. K6F1016S4M-I Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2305. K6F1016S4M-TB12 Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2306. K6F1016S4M-TB15 Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2307. K6F1016S4M-TF12 Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2308. K6F1016S4M-TF15 Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2309. K6F1016U4A Samsung - K6F1016U4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2310. K6F1016U4A-FI10 Samsung - K6F1016U4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2311. K6F1016U4A-FI70 Samsung - K6F1016U4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2312. K6F1016U4A-I Samsung - K6F1016U4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2313. K6F1016U4B Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2314. K6F1016U4B-F Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2315. K6F1016U4B-FF55 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2316. K6F1016U4B-FF70 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2317. K6F1016U4C Samsung - K6F1016U4C 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2318. K6F1016U4C-AF55 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2319. K6F1016U4C-AF70 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2320. K6F1016U4C-EF55 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2321. K6F1016U4C-EF70 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2322. K6F1016U4C-F Samsung - K6F1016U4C 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2323. K6F1016V3M Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2324. K6F1016V3M-C Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2325. K6F1016V3M-I Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2326. K6F1016V3M-TB70 Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2327. K6F1016V3M-TB85 Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2328. K6F1016V3M-TF70 Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2329. K6F1016V3M-TF85 Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2330. K6F1016V4B Samsung - K6F1016V4B 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2331. K6F1016V4B-F Samsung - K6F1016V4B 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2332. K6F1016V4B-FF55 Samsung - K6F1016V4B 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2333. K6F1016V4B-FF70 Samsung - K6F1016V4B 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2334. K6F1616R6A Samsung - K6F1616R6A 1M X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2335. K6F1616R6A-EF70 Samsung - K6F1616R6A 1M X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2336. K6F1616R6A-EF85 Samsung - K6F1616R6A 1M X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2337. K6F1616R6A-F Samsung - K6F1616R6A 1M X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2338. K6F1616R6C Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2339. K6F1616R6C-F Samsung - 1m X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2340. K6F1616R6C-FF70 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2341. K6F1616R6M Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Eol ; Comments = -
  2342. K6F1616R6M-EF70 Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Eol ; Comments = -
  2343. K6F1616R6M-EF85 Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Eol ; Comments = -
  2344. K6F1616R6M-F Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Eol ; Comments = -
  2345. K6F1616T6B Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2346. K6F1616T6B-EF55 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2347. K6F1616T6B-EF70 Samsung - 1m X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2348. K6F1616T6B-F Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2349. K6F1616T6B-TF55 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2350. K6F1616T6B-TF70 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2351. K6F1616T6C Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2352. K6F1616T6C-F Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2353. K6F1616T6C-FF55 Samsung - 1m X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2354. K6F1616T6C-FF70 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2355. K6F1616U6A Samsung - K6F1616U6A 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2356. K6F1616U6A-EF55 Samsung - K6F1616U6A 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2357. K6F1616U6A-EF70 Samsung - K6F1616U6A 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2358. K6F1616U6A-F Samsung - K6F1616U6A 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2359. K6F1616U6C Samsung - 16mb(1m X 16 Bit) Low Power Sram
  2360. K6F1616U6C-F Samsung - 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F1616U6C families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial operating temperature ranges.The families also support low data retention voltage for battery back-up operation with low data retention current.
  2361. K6F1616U6M Samsung - 1m X 16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2362. K6F1616U6M-EF55 Samsung - K6F1616U6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 4 ; Package = 2 ; Production Status = Eol ; Comments = -
  2363. K6F1616U6M-EF70 Samsung - K6F1616U6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 4 ; Package = 2 ; Production Status = Eol ; Comments = -
  2364. K6F1616U6M-F Samsung - 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2365. K6F2008R2M Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2366. K6F2008R2M-C Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2367. K6F2008R2M-I Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2368. K6F2008R2M-TC30 Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2369. K6F2008R2M-TI30 Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2370. K6F2008S2E Samsung - 256kx8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2371. K6F2008S2E-F Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2372. K6F2008S2E-YF70 Samsung - K6F2008S2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2373. K6F2008S2E-YF85 Samsung - K6F2008S2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2374. K6F2008S2M Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2375. K6F2008S2M-C Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2376. K6F2008S2M-I Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2377. K6F2008S2M-TC12 Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2378. K6F2008S2M-TC15 Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2379. K6F2008S2M-TI12 Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2380. K6F2008S2M-TI15 Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2381. K6F2008T2E Samsung - 256kx8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2382. K6F2008T2E-F Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2383. K6F2008T2E-YF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2384. K6F2008T2E-YF70 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2385. K6F2008U2E Samsung - K6F2008U2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2386. K6F2008U2E-EF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2387. K6F2008U2E-EF70 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2388. K6F2008U2E-F Samsung - K6F2008U2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2389. K6F2008U2E-YF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2390. K6F2008U2E-YF70 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2391. K6F2008V2E Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2392. K6F2008V2E-F Samsung - K6F2008V2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2393. K6F2008V2E-LF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2394. K6F2008V2E-LF70 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2395. K6F2008V2E-YF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2396. K6F2008V2E-YF70 Samsung - 256kx8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2397. K6F2008V2M Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2398. K6F2008V2M-C Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2399. K6F2008V2M-I Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2400. K6F2008V2M-TC70 Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2401. K6F2008V2M-TC85 Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2402. K6F2008V2M-TI70 Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2403. K6F2008V2M-TI85 Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2404. K6F2016R3M Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2405. K6F2016R3M-C Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2406. K6F2016R3M-I Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2407. K6F2016R3M-TC30 Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2408. K6F2016R3M-TI30 Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2409. K6F2016R3M-ZI30 Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2410. K6F2016R4A Samsung - K6F2016R4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 3 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2411. K6F2016R4A-I Samsung - K6F2016R4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 3 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2412. K6F2016R4A-ZI10 Samsung - K6F2016R4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 3 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2413. K6F2016R4A-ZI70 Samsung - K6F2016R4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 3 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2414. K6F2016R4D Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2415. K6F2016R4D-F Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2416. K6F2016R4DFamily Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2417. K6F2016R4D-FF70 Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2418. K6F2016R4D-FF85 Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2419. K6F2016R4E Samsung - K6F2016R4E 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65x2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2420. K6F2016R4E-EF70 Samsung - K6F2016R4E 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65x2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2421. K6F2016R4E-EF85 Samsung - K6F2016R4E 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65x2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2422. K6F2016R4E-F Samsung - K6F2016R4E 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65x2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2423. K6F2016R4G Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2424. K6F2016R4G-F Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2425. K6F2016R4G-FF70 Samsung - 2mb(128k X 16 Bit) Low Power Sram
  2426. K6F2016R4G-FF85 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2427. K6F2016R4G-XF70 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2428. K6F2016R4G-XF85 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2429. K6F2016S3M Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2430. K6F2016S3M-C Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2431. K6F2016S3M-I Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2432. K6F2016S3M-TC12 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2433. K6F2016S3M-TC15 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2434. K6F2016S3M-TI12 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2435. K6F2016S3M-TI15 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2436. K6F2016S3M-ZI15 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2437. K6F2016S4A Samsung - K6F2016S4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2438. K6F2016S4A-I Samsung - K6F2016S4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2439. K6F2016S4A-ZI10 Samsung - K6F2016S4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2440. K6F2016S4A-ZI70 Samsung - K6F2016S4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2441. K6F2016S4D Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2442. K6F2016S4D-F Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2443. K6F2016S4DFamily Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2444. K6F2016S4D-FF70 Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2445. K6F2016S4D-FF85 Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2446. K6F2016S4E Samsung - K6F2016S4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48 Fbga ; Production Status = Mass Production ; Comments = -
  2447. K6F2016S4E-EF70 Samsung - K6F2016S4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48 Fbga ; Production Status = Mass Production ; Comments = -
  2448. K6F2016S4E-EF85 Samsung - K6F2016S4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48 Fbga ; Production Status = Mass Production ; Comments = -
  2449. K6F2016S4E-F Samsung - K6F2016S4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48 Fbga ; Production Status = Mass Production ; Comments = -
  2450. K6F2016U3A Samsung - K6F2016U3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2451. K6F2016U3A-I Samsung - K6F2016U3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2452. K6F2016U3A-TI10 Samsung - K6F2016U3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2453. K6F2016U3A-TI70 Samsung - K6F2016U3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2454. K6F2016U4A Samsung - K6F2016U4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2455. K6F2016U4A-I Samsung - K6F2016U4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2456. K6F2016U4A-ZI10 Samsung - K6F2016U4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2457. K6F2016U4A-ZI70 Samsung - K6F2016U4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2458. K6F2016U4D Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2459. K6F2016U4D-F Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2460. K6F2016U4DFamily Samsung - K6F2016U4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2461. K6F2016U4D-FF55 Samsung - 128k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2462. K6F2016U4D-FF70 Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2463. K6F2016U4E Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2464. K6F2016U4E-EF55 Samsung - K6F2016U4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2465. K6F2016U4E-EF70 Samsung - K6F2016U4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2466. K6F2016U4E-F Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2467. K6F2016U4G Samsung - 2mb(128k X 16 Bit) Low Power Sram
  2468. K6F2016U4G-F Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2469. K6F2016U4G-FF55 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2470. K6F2016U4G-FF70 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2471. K6F2016U4G-XF55 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2472. K6F2016U4G-XF70 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2473. K6F2016V3A Samsung - K6F2016V3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2474. K6F2016V3A-I Samsung - K6F2016V3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2475. K6F2016V3A-TI10 Samsung - K6F2016V3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2476. K6F2016V3A-TI70 Samsung - K6F2016V3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2477. K6F2016V3M Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2478. K6F2016V3M-C Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2479. K6F2016V3M-I Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2480. K6F2016V3M-TC70 Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2481. K6F2016V3M-TC85 Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2482. K6F2016V3M-TI70 Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2483. K6F2016V3M-TI85 Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2484. K6F2016V4A Samsung - K6F2016V4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2485. K6F2016V4A-F Samsung - K6F2016V4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2486. K6F2016V4A-ZF10 Samsung - K6F2016V4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2487. K6F2016V4A-ZF70 Samsung - K6F2016V4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2488. K6F2016V4D Samsung - K6F2016V4D 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2489. K6F2016V4D-F Samsung - K6F2016V4D 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2490. K6F2016V4D-FF55 Samsung - K6F2016V4D 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2491. K6F2016V4D-FF70 Samsung - K6F2016V4D 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2492. K6F2016V4E Samsung - 128k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2493. K6F2016V4E-EF55 Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2494. K6F2016V4E-EF70 Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2495. K6F2016V4E-F Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2496. K6F3216T6M Samsung - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2497. K6F3216T6M-F Samsung - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2498. K6F3216U6M Samsung - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2499. K6F3216U6M-F Samsung - 2m X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2500. K6F4008R2C Samsung - K6F4008R2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48-FBGA ; Production Status = Eol ; Comments = -
  2501. K6F4008R2C-F Samsung - K6F4008R2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48-FBGA ; Production Status = Eol ; Comments = -
  2502. K6F4008R2C-FF70 Samsung - K6F4008R2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48-FBGA ; Production Status = Eol ; Comments = -
  2503. K6F4008R2C-FF85 Samsung - K6F4008R2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48-FBGA ; Production Status = Eol ; Comments = -
  2504. K6F4008R2D Samsung - K6F4008R2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2505. K6F4008R2D-F Samsung - K6F4008R2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2506. K6F4008R2D-FF70 Samsung - K6F4008R2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2507. K6F4008R2D-FF85 Samsung - K6F4008R2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2508. K6F4008R2F Samsung - K6F4008R2F 512K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2509. K6F4008R2F-EF70 Samsung - K6F4008R2F 512K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2510. K6F4008R2F-EF85 Samsung - K6F4008R2F 512K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2511. K6F4008R2F-F Samsung - K6F4008R2F 512K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2512. K6F4008S2C Samsung - K6F4008S2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2513. K6F4008S2C-F Samsung - K6F4008S2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2514. K6F4008S2C-FF70 Samsung - K6F4008S2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2515. K6F4008S2C-FF85 Samsung - K6F4008S2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2516. K6F4008S2D Samsung - K6F4008S2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2517. K6F4008S2D-F Samsung - K6F4008S2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2518. K6F4008S2D-FF70 Samsung - K6F4008S2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2519. K6F4008S2D-FF85 Samsung - K6F4008S2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2520. K6F4008U1C Samsung - K6F4008U1C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2521. K6F4008U1C-F Samsung - K6F4008U1C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2522. K6F4008U1C-YF55 Samsung - K6F4008U1C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2523. K6F4008U1C-YF70 Samsung - K6F4008U1C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2524. K6F4008U1D Samsung - K6F4008U1D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2525. K6F4008U1D-F Samsung - K6F4008U1D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2526. K6F4008U1D-YF55 Samsung - K6F4008U1D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2527. K6F4008U1D-YF70 Samsung - K6F4008U1D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2528. K6F4008U2C Samsung - K6F4008U2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2529. K6F4008U2C-F Samsung - K6F4008U2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2530. K6F4008U2C-FF55 Samsung - K6F4008U2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2531. K6F4008U2C-FF70 Samsung - K6F4008U2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2532. K6F4008U2D Samsung - K6F4008U2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2533. K6F4008U2D-F Samsung - K6F4008U2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2534. K6F4008U2D-FF55 Samsung - K6F4008U2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2535. K6F4008U2D-FF70 Samsung - K6F4008U2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2536. K6F4008U2E Samsung - 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2537. K6F4008U2E-EF55 Samsung - 512k X 8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2538. K6F4008U2E-EF70 Samsung - 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2539. K6F4008U2E-F Samsung - 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2540. K6F4008U2F Samsung - K6F4008U2F 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 45,55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2541. K6F4008U2F-EF55 Samsung - K6F4008U2F 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 45,55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2542. K6F4008U2F-EF70 Samsung - K6F4008U2F 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 45,55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2543. K6F4008U2F-F Samsung - K6F4008U2F 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 45,55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2544. K6F4008U2G Samsung - 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2545. K6F4008U2G-EF55 Samsung - K6F4008U2G 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 27 ; Standby Current(uA) = 10 ; Package = 48TBGA ; Production Status = Mass Product ; Comments = Product
  2546. K6F4008U2G-EF70 Samsung - K6F4008U2G 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 27 ; Standby Current(uA) = 10 ; Package = 48TBGA ; Production Status = Mass Product ; Comments = Product
  2547. K6F4008U2G-F Samsung - 512k X 8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2548. K6F4016R4D Samsung - K6F4016R4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2549. K6F4016R4D-F Samsung - K6F4016R4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2550. K6F4016R4D-FF70 Samsung - K6F4016R4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2551. K6F4016R4D-FF85 Samsung - K6F4016R4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2552. K6F4016R4E Samsung - 256k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2553. K6F4016R4E-EF70 Samsung - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2554. K6F4016R4E-EF85 Samsung - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2555. K6F4016R4E-F Samsung - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2556. K6F4016R4G Samsung - 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F4016R4G families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention curren
  2557. K6F4016R4G-EF70 Samsung - 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F4016R4G families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention curren
  2558. K6F4016R4G-EF85 Samsung - 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F4016R4G families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention curren
  2559. K6F4016R4M Samsung - K6F4016R4M 256K X 16 Bit Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2560. K6F4016R4M-I Samsung - K6F4016R4M 256K X 16 Bit Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2561. K6F4016R4M-ZI10 Samsung - K6F4016R4M 256K X 16 Bit Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2562. K6F4016R4M-ZI85 Samsung - K6F4016R4M 256K X 16 Bit Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2563. K6F4016R6C Samsung - K6F4016R6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2564. K6F4016R6C-F Samsung - K6F4016R6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2565. K6F4016R6C-ZF70 Samsung - K6F4016R6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2566. K6F4016R6C-ZF85 Samsung - K6F4016R6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2567. K6F4016R6D Samsung - K6F4016R6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2568. K6F4016R6D-F Samsung - K6F4016R6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2569. K6F4016R6D-FF70 Samsung - K6F4016R6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2570. K6F4016R6D-FF85 Samsung - K6F4016R6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2571. K6F4016R6E Samsung - K6F4016R6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2572. K6F4016R6E-EF70 Samsung - K6F4016R6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2573. K6F4016R6E-EF85 Samsung - K6F4016R6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2574. K6F4016R6E-F Samsung - K6F4016R6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2575. K6F4016R6F Samsung - K6F4016R6F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2576. K6F4016R6F-EF70 Samsung - K6F4016R6F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2577. K6F4016R6F-EF85 Samsung - K6F4016R6F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2578. K6F4016R6F-F Samsung - K6F4016R6F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2579. K6F4016R6G Samsung - K6F4016R6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 8 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2580. K6F4016R6G-EF70 Samsung - K6F4016R6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 8 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2581. K6F4016R6G-EF85 Samsung - K6F4016R6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 8 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2582. K6F4016R6G-F Samsung - K6F4016R6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 8 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2583. K6F4016R6M Samsung - K6F4016R6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2584. K6F4016R6M-I Samsung - K6F4016R6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2585. K6F4016R6M-ZI10 Samsung - K6F4016R6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2586. K6F4016R6M-ZI85 Samsung - K6F4016R6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2587. K6F4016S4D Samsung - K6F4016S4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2588. K6F4016S4D-F Samsung - K6F4016S4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2589. K6F4016S4D-FF70 Samsung - K6F4016S4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2590. K6F4016S4D-FF85 Samsung - K6F4016S4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2591. K6F4016S4M Samsung - K6F4016S4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2592. K6F4016S4M-I Samsung - K6F4016S4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2593. K6F4016S4M-ZI10 Samsung - K6F4016S4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2594. K6F4016S4M-ZI70 Samsung - K6F4016S4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2595. K6F4016S6D Samsung - K6F4016S6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2596. K6F4016S6D-F Samsung - K6F4016S6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2597. K6F4016S6D-FF70 Samsung - K6F4016S6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2598. K6F4016S6D-FF85 Samsung - K6F4016S6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2599. K6F4016S6M Samsung - K6F4016S6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2600. K6F4016S6M-I Samsung - K6F4016S6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2601. K6F4016S6M-ZI10 Samsung - K6F4016S6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2602. K6F4016S6M-ZI70 Samsung - K6F4016S6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2603. K6F4016U4D Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2604. K6F4016U4D-F Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2605. K6F4016U4DFamily Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2606. K6F4016U4D-FF55 Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2607. K6F4016U4D-FF70 Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2608. K6F4016U4E Samsung - K6F4016U4E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2609. K6F4016U4E-EF55 Samsung - K6F4016U4E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2610. K6F4016U4E-EF70 Samsung - K6F4016U4E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2611. K6F4016U4E-F Samsung - K6F4016U4E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2612. K6F4016U4F Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2613. K6F4016U4F-EF55 Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2614. K6F4016U4F-EF70 Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2615. K6F4016U4F-F Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2616. K6F4016U4G Samsung - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2617. K6F4016U4G-EF55 Samsung - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2618. K6F4016U4G-EF70 Samsung - 256kx16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2619. K6F4016U4G-F Samsung - 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F4016U4G families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention current.
  2620. K6F4016U4M Samsung - K6F4016U4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2621. K6F4016U4M-I Samsung - K6F4016U4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2622. K6F4016U4M-ZI10 Samsung - K6F4016U4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2623. K6F4016U4M-ZI70 Samsung - K6F4016U4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2624. K6F4016U6C Samsung - K6F4016U6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2625. K6F4016U6C-F Samsung - K6F4016U6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2626. K6F4016U6C-FF55 Samsung - K6F4016U6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2627. K6F4016U6C-FF70 Samsung - K6F4016U6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2628. K6F4016U6D Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2629. K6F4016U6D-F Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2630. K6F4016U6DFamily Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2631. K6F4016U6D-FF55 Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2632. K6F4016U6D-FF70 Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2633. K6F4016U6E Samsung - K6F4016U6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2634. K6F4016U6E-EF55 Samsung - K6F4016U6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2635. K6F4016U6E-EF70 Samsung - K6F4016U6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2636. K6F4016U6E-F Samsung - K6F4016U6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2637. K6F4016U6F Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2638. K6F4016U6F-EF55 Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2639. K6F4016U6F-EF70 Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2640. K6F4016U6F-F Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2641. K6F4016U6G Samsung - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2642. K6F4016U6G-EF55 Samsung - K6F4016U6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 27 ; Standby Current(uA) = 10 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2643. K6F4016U6G-EF70 Samsung - K6F4016U6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 27 ; Standby Current(uA) = 10 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2644. K6F4016U6G-F Samsung - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2645. K6F4016U6M Samsung - K6F4016U6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2646. K6F4016U6M-I Samsung - K6F4016U6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2647. K6F4016U6M-ZI10 Samsung - K6F4016U6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2648. K6F4016U6M-ZI70 Samsung - K6F4016U6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2649. K6F4016V6C Samsung - K6F4016V6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2650. K6F4016V6C-F Samsung - K6F4016V6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2651. K6F4016V6C-FF55 Samsung - K6F4016V6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2652. K6F4016V6C-FF70 Samsung - K6F4016V6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2653. K6F4016V6D Samsung - K6F4016V6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2654. K6F4016V6D-F Samsung - K6F4016V6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2655. K6F4016V6D-FF55 Samsung - K6F4016V6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2656. K6F4016V6D-FF70 Samsung - K6F4016V6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2657. K6F8008R2M Samsung - K6F8008R2M 1M X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2658. K6F8008R2M-F Samsung - K6F8008R2M 1M X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2659. K6F8008R2M-FF70 Samsung - K6F8008R2M 1M X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2660. K6F8008R2M-FF85 Samsung - K6F8008R2M 1M X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2661. K6F8008S2M Samsung - K6F8008S2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA,TSOP ; Production Status = Eol ; Comments = -
  2662. K6F8008S2M-F Samsung - K6F8008S2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA,TSOP ; Production Status = Eol ; Comments = -
  2663. K6F8008S2M-FF70 Samsung - K6F8008S2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA,TSOP ; Production Status = Eol ; Comments = -
  2664. K6F8008S2M-FF85 Samsung - K6F8008S2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA,TSOP ; Production Status = Eol ; Comments = -
  2665. K6F8008U2M Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2666. K6F8008U2M-F Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2667. K6F8008U2M-FF55 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2668. K6F8008U2M-FF70 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2669. K6F8008U2M-RF55 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2670. K6F8008U2M-RF70 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2671. K6F8008U2M-TF55 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2672. K6F8008U2M-TF70 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2673. K6F8008V2M Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2674. K6F8008V2M-F Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2675. K6F8008V2M-FF55 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2676. K6F8008V2M-FF70 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2677. K6F8008V2M-RF55 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2678. K6F8008V2M-RF70 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2679. K6F8008V2M-TF55 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2680. K6F8008V2M-TF70 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2681. K6F8016R6A Samsung - K6F8016R6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2682. K6F8016R6A-EF70 Samsung - K6F8016R6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2683. K6F8016R6A-EF85 Samsung - K6F8016R6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2684. K6F8016R6A-F Samsung - K6F8016R6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2685. K6F8016R6B Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2686. K6F8016R6B-EF70 Samsung - K6F8016R6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2V ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2687. K6F8016R6B-EF85 Samsung - K6F8016R6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2V ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2688. K6F8016R6B-F Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2689. K6F8016R6C Samsung - K6F8016R6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 10 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2690. K6F8016R6C-F Samsung - K6F8016R6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 10 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2691. K6F8016R6C-FF70 Samsung - K6F8016R6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 10 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2692. K6F8016R6C-FF85 Samsung - K6F8016R6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 10 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2693. K6F8016R6D Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2694. K6F8016R6D-F Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2695. K6F8016R6D-FF70 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F8016R6D families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
  2696. K6F8016R6M Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2697. K6F8016R6M-F Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2698. K6F8016R6M-FF70 Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2699. K6F8016R6M-FF85 Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2700. K6F8016S6A Samsung - K6F8016S6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2701. K6F8016S6A-EF70 Samsung - K6F8016S6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2702. K6F8016S6A-EF85 Samsung - K6F8016S6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2703. K6F8016S6A-F Samsung - K6F8016S6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2704. K6F8016S6M Samsung - K6F8016S6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2705. K6F8016S6M-F Samsung - K6F8016S6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2706. K6F8016S6M-FF70 Samsung - K6F8016S6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2707. K6F8016S6M-FF85 Samsung - K6F8016S6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2708. K6F8016T6C Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2709. K6F8016T6C-FF55 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2710. K6F8016T6C-FF70 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2711. K6F8016U3A Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2712. K6F8016U3A-B Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2713. K6F8016U3A-F Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2714. K6F8016U3A-RB55 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2715. K6F8016U3A-RB70 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2716. K6F8016U3A-RF55 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2717. K6F8016U3A-RF70 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2718. K6F8016U3A-TB55 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2719. K6F8016U3A-TB70 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2720. K6F8016U3A-TF55 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2721. K6F8016U3A-TF70 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2722. K6F8016U3M Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2723. K6F8016U3M-B Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2724. K6F8016U3M-F Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2725. K6F8016U3M-RB55 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2726. K6F8016U3M-RB70 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2727. K6F8016U3M-RF55 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2728. K6F8016U3M-RF70 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2729. K6F8016U3M-TB55 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2730. K6F8016U3M-TB70 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2731. K6F8016U3M-TF55 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2732. K6F8016U3M-TF70 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2733. K6F8016U6 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2734. K6F8016U6A Samsung - K6F8016U6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = K6F8016U6B Recommended
  2735. K6F8016U6A-EF55 Samsung - K6F8016U6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = K6F8016U6B Recommended
  2736. K6F8016U6A-EF70 Samsung - K6F8016U6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = K6F8016U6B Recommended
  2737. K6F8016U6A-F Samsung - K6F8016U6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = K6F8016U6B Recommended
  2738. K6F8016U6B Samsung - K6F8016U6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2739. K6F8016U6B-EF55 Samsung - K6F8016U6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2740. K6F8016U6B-EF70 Samsung - K6F8016U6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2741. K6F8016U6B-F Samsung - K6F8016U6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2742. K6F8016U6C Samsung - K6F8016U6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 28 ; Standby Current(uA) = 15 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2743. K6F8016U6C-F Samsung - K6F8016U6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 28 ; Standby Current(uA) = 15 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2744. K6F8016U6C-FF55 Samsung - K6F8016U6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 28 ; Standby Current(uA) = 15 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2745. K6F8016U6C-FF70 Samsung - K6F8016U6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 28 ; Standby Current(uA) = 15 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2746. K6F8016U6D Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2747. K6F8016U6D-F Samsung - 512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F8016U6D families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
  2748. K6F8016U6D-FF55 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2749. K6F8016U6D-FF70 Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2750. K6F8016U6D-XF55 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2751. K6F8016U6D-XF70 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2752. K6F8016U6M Samsung - K6F8016U6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2753. K6F8016U6M-F Samsung - K6F8016U6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2754. K6F8016U6M-FF55 Samsung - K6F8016U6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2755. K6F8016U6M-FF70 Samsung - K6F8016U6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2756. K6F8016V3A Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2757. K6F8016V3A-F Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2758. K6F8016V3A-RF55 Samsung - K6F8016V3A 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X8016T3B Recommended
  2759. K6F8016V3A-RF70 Samsung - K6F8016V3A 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X8016T3B Recommended
  2760. K6F8016V3A-TF55 Samsung - K6F8016V3A 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X8016T3B Recommended
  2761. K6F8016V3A-TF70 Samsung - K6F8016V3A 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X8016T3B Recommended
  2762. K6F8016V3M Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2763. K6F8016V3M-B Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2764. K6F8016V3M-F Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2765. K6F8016V3M-RB55 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2766. K6F8016V3M-RB70 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2767. K6F8016V3M-RF55 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2768. K6F8016V3M-RF70 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2769. K6F8016V3M-TB55 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2770. K6F8016V3M-TB70 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2771. K6F8016V3M-TF55 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2772. K6F8016V3M-TF70 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2773. K6F8016V6M Samsung - K6F8016V6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2774. K6F8016V6M-F Samsung - K6F8016V6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2775. K6F8016V6M-FF55 Samsung - K6F8016V6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2776. K6F8016V6M-FF70 Samsung - K6F8016V6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2777. K6L0908C2A Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2778. K6L0908C2A-B Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2779. K6L0908C2A-C Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2780. K6L0908C2A-F Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2781. K6L0908C2A-GB55 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2782. K6L0908C2A-GB70 Samsung - 64kx8 Bit Low Power Cmos Static Ram
  2783. K6L0908C2A-GF70 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2784. K6L0908C2A-GL55 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2785. K6L0908C2A-GL70 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2786. K6L0908C2A-GP70 Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2787. K6L0908C2A-I Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2788. K6L0908C2A-L Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2789. K6L0908C2A-L/-B Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2790. K6L0908C2A-P Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2791. K6L0908C2A-P/-F Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2792. K6L0908C2A-TB55 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2793. K6L0908C2A-TB70 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2794. K6L0908C2A-TF70 Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2795. K6L0908U2A Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2796. K6L0908U2A-B Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2797. K6L0908U2A-D Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2798. K6L0908U2A-F Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2799. K6L0908U2A-GB10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2800. K6L0908U2A-GB85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2801. K6L0908U2A-GD10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2802. K6L0908U2A-GD85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2803. K6L0908U2A-GF10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2804. K6L0908U2A-GF85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2805. K6L0908U2A-TB10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2806. K6L0908U2A-TB85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2807. K6L0908U2A-TD10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2808. K6L0908U2A-TD85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2809. K6L0908U2A-TF10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2810. K6L0908U2A-TF85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2811. K6L0908U2A-YB10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2812. K6L0908U2A-YB85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2813. K6L0908U2A-YD10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2814. K6L0908U2A-YD85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2815. K6L0908U2A-YF10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2816. K6L0908U2A-YF85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2817. K6L0908V2A Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2818. K6L0908V2A-B Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2819. K6L0908V2A-D Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2820. K6L0908V2A-F Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2821. K6L0908V2A-GB10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2822. K6L0908V2A-GB70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2823. K6L0908V2A-GB85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2824. K6L0908V2A-GD10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2825. K6L0908V2A-GD70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2826. K6L0908V2A-GD85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2827. K6L0908V2A-GF10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2828. K6L0908V2A-GF70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2829. K6L0908V2A-GF85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2830. K6L0908V2A-TB10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2831. K6L0908V2A-TB70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2832. K6L0908V2A-TB85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2833. K6L0908V2A-TD10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2834. K6L0908V2A-TD70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2835. K6L0908V2A-TD85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2836. K6L0908V2A-TF10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2837. K6L0908V2A-TF70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2838. K6L0908V2A-TF85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2839. K6L0908V2A-YB10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2840. K6L0908V2A-YB70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2841. K6L0908V2A-YB85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2842. K6L0908V2A-YD10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2843. K6L0908V2A-YD70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2844. K6L0908V2A-YD85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2845. K6L0908V2A-YF10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2846. K6L0908V2A-YF70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2847. K6L0908V2A-YF85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2848. K6L1016C3B Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2849. K6L1016C3B-B Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2850. K6L1016C3B-F Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2851. K6L1016C3B-RB55 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2852. K6L1016C3B-RB70 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2853. K6L1016C3B-RF10 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2854. K6L1016C3B-RF70 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2855. K6L1016C3B-TB55 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2856. K6L1016C3B-TB70 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2857. K6L1016C3B-TF10 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2858. K6L1016C3B-TF70 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2859. K6L1016U3B Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2860. K6L1016U3B-B Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2861. K6L1016U3B-F Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2862. K6L1016U3B-RB10 Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2863. K6L1016U3B-RF10 Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2864. K6L1016U3B-TB10 Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2865. K6L1016U3B-TF10 Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2866. K6L1016V3B Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2867. K6L1016V3B-B Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2868. K6L1016V3B-F Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2869. K6L1016V3B-RB70 Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2870. K6L1016V3B-RF85 Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2871. K6L1016V3B-TB70 Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2872. K6L1016V3B-TF85 Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2873. K6R1004C1A Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2874. K6R1004C1A-12 Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2875. K6R1004C1A-15 Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2876. K6R1004C1A-20 Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2877. K6R1004C1A-C Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2878. K6R1004C1A-J Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2879. K6R1004C1B Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2880. K6R1004C1B-10 Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2881. K6R1004C1B-12 Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2882. K6R1004C1B-8 Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2883. K6R1004C1B-C Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2884. K6R1004C1B-J Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2885. K6R1004C1C Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2886. K6R1004C1C-10 Samsung - K6R1004C1C 256Kx4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 30 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004C1D
  2887. K6R1004C1C-12 Samsung - K6R1004C1C 256Kx4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 30 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004C1D
  2888. K6R1004C1C-15 Samsung - K6R1004C1C 256Kx4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 30 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004C1D
  2889. K6R1004C1C-C Samsung - 256kx4 Bit (with Oe) High-speed Cmos Static Ram(5.0v Operating).
  2890. K6R1004C1C-C10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2891. K6R1004C1C-C12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2892. K6R1004C1C-C15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2893. K6R1004C1C-C20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2894. K6R1004C1C-I Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2895. K6R1004C1C-I10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2896. K6R1004C1C-I12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2897. K6R1004C1C-I15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2898. K6R1004C1C-I20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2899. K6R1004C1C-J Samsung - K6R1004C1C 256Kx4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 30 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004C1D
  2900. K6R1004C1C-L Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2901. K6R1004C1C-P Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2902. K6R1004C1D Samsung - 256kx4 Bit (with Oe) High-speed Cmos Static Ram(5.0v Operating).
  2903. K6R1004C1D-10 Samsung - K6R1004C1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2904. K6R1004C1D-12 Samsung - K6R1004C1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2905. K6R1004C1D-JC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2906. K6R1004C1D-JC10 Samsung - 64kx16 Bit High-speed Cmos Static Ram(3.3v Operating) Operated At Commercial and Industrial Temperature Ranges.
  2907. K6R1004C1D-JC12 Samsung - K6R1004C1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2908. K6R1004C1D-JCI10/12 Samsung - 64kx16 Bit High-speed CMOS Static RAM (3.3v Operating) Operated at Commercial and Industrial Temperature Ranges.
  2909. K6R1004C1D-JI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2910. K6R1004C1D-JI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2911. K6R1004C1D-JI12 Samsung - K6R1004C1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2912. K6R1004C1D-KC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2913. K6R1004C1D-KC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2914. K6R1004C1D-KI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2915. K6R1004C1D-KI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2916. K6R1004V1A Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2917. K6R1004V1A-12 Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2918. K6R1004V1A-15 Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2919. K6R1004V1A-20 Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2920. K6R1004V1A-C Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2921. K6R1004V1A-J Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2922. K6R1004V1B Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2923. K6R1004V1B-10 Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2924. K6R1004V1B-12 Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2925. K6R1004V1B-8 Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2926. K6R1004V1B-C Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2927. K6R1004V1B-J Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2928. K6R1004V1C Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2929. K6R1004V1C-10 Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2930. K6R1004V1C-12 Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2931. K6R1004V1C-15 Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2932. K6R1004V1C-C Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2933. K6R1004V1C-C10 Samsung - 256kx4 Bit (with Oe) High-speed Cmos Static Ram(3.3v Operating).
  2934. K6R1004V1C-C12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2935. K6R1004V1C-C15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2936. K6R1004V1C-C20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2937. K6R1004V1C-C/C-L Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2938. K6R1004V1C-I Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2939. K6R1004V1C-I10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2940. K6R1004V1C-I12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2941. K6R1004V1C-I15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2942. K6R1004V1C-I20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2943. K6R1004V1C-I/C-P Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2944. K6R1004V1C-J Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2945. K6R1004V1C-L Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2946. K6R1004V1C-L10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2947. K6R1004V1C-L12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2948. K6R1004V1C-L15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2949. K6R1004V1C-L20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2950. K6R1004V1C-P Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2951. K6R1004V1C-P10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2952. K6R1004V1C-P12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2953. K6R1004V1C-P15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2954. K6R1004V1C-P20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2955. K6R1004V1D Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2956. K6R1004V1D-08 Samsung - K6R1004V1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2957. K6R1004V1D-10 Samsung - K6R1004V1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2958. K6R1004V1D-J Samsung - K6R1004V1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2959. K6R1004V1D-JC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2960. K6R1004V1D-JC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2961. K6R1004V1D-JC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2962. K6R1004V1D-JC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2963. K6R1004V1D-JCI08/10 Samsung - 64kx16 Bit High-speed CMOS Static RAM (3.3v Operating) Operated at Commercial and Industrial Temperature Ranges.
  2964. K6R1004V1D-JI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2965. K6R1004V1D-JI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2966. K6R1004V1D-JI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2967. K6R1004V1D-JI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2968. K6R1004V1D-KC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2969. K6R1004V1D-KC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2970. K6R1004V1D-KC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2971. K6R1004V1D-KC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2972. K6R1004V1D-KI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2973. K6R1004V1D-KI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2974. K6R1004V1D-KI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2975. K6R1004V1D-KI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2976. K6R1008C1A- Samsung - 128kx8 High Speed Static Ram5v Operating, Revolutionary Pin Out. Operated At Commercial and Industrial Temperature Ranges.
  2977. K6R1008C1A-12 Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2978. K6R1008C1A-15 Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2979. K6R1008C1A-20 Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2980. K6R1008C1A-C Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2981. K6R1008C1A-C12 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2982. K6R1008C1A-C15 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2983. K6R1008C1A-C20 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2984. K6R1008C1A-I Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2985. K6R1008C1A-I12 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2986. K6R1008C1A-I15 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2987. K6R1008C1A-I20 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2988. K6R1008C1A-J Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2989. K6R1008C1A-T Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2990. K6R1008C1B- Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2991. K6R1008C1B-10 Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2992. K64004C1D Samsung - 1mx4 Bit High Speed Static Ram(5.0v Operating). Operated At Commercial and Industrial Temperature Ranges.
  2993. K5N07FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  2994. K50UF Voltage Multipliers - VRWM = 5.0KV, Io(A) = 2.2, Trr(nS) = 100, Package = Axial-leaded,epoxy, Terminat...
  2995. K50F Voltage Multipliers - VRWM = 5.0KV, Io(A) = 2.2, Trr(nS) = 200, Package = Axial-leaded,epoxy, Terminat...
  2996. K50S Voltage Multipliers - VRWM = 5.0KV, Io(A) = 2.2, Trr(nS) = 3000, Package = Axial-leaded,epoxy, Termina...
  2997. K570A MtronPTI - Package Description = 8 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CMO...
  2998. K57/3A MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.000 to 52.000 MHZ, Output Logic =...
  2999. K500 MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic =...
  3000. K500F MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.500 to 100.000 MHZ, Output Logic...