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Список компонентов Toshiba, страница 5

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3SK199 - N Channel Dual Gate Mos Type (tv Tuner, Uhf Rf Amplifier Applications)

3SK207 - N Channel Dual Gate Mos Type (tv Tuner, Uhf Rf Amplifier Applications)
3SK225 - N Channel Dual Gate Mos Type (tv, Fm Tuner Vhf Rf, Uhf Rf Amplifier Appliations)
3SK226 - N Channel Dual Gate Mos Type (tv Tuner, Vhf Rf Amplifier, Fm Tuner Applications)
3SK232 - Tv Tuner, Uhf Rf Amplifier Applications.
3SK240 - N Channel Dual Gate Mes Type (tv Tuner, Uhf Rf Amplifier Applications)
3SK249 - N Channel Dual Gate Mos Type (tv Tuner, Uhf Rf Amplifier Applications)
3SK256 - N Channel Dual Gate Mos Type (tv Tuner, Uhf Rf Amplifier Applications)
3SK257 - N Channel Dual Gate Mos Type (tv, Fm Tuner, Vhf, Uhf Rf Amplifier Applications)
3SK258 - N Channel Dual Gate Mos Type (tv, Fm Tuner Vhf Rf Amplifier Applications)
3SK259 - N Channel Dual Gate Mos Type (tv Tuner, Uhf, Vhf Wide Band Rf Amplifier Applications)
3SK260 - N Channel Dual Gate Mos Type (tv Tuner Vhf Mixer,vhf Rf Amplifier Applications)
3SK274 - N Channel Dual Gate Mes Type (tv Tuner, Uhf Rf Amplifier Applications)
3SK283 - N Channel Dual Gate Mes Type (tv Tuner, Uhf Rf Amplifier Applications)
3SK284 - N Channel Dual Gate Mes Type (tv Tuner, Uhf Rf Amplifier Applications)
3SK291 - N Channel Dual Gate Mos Type (tv Tuner, Uhf Rf Amplifier Applications)
3SK292 - N Channel Dual Gate Mos Type (tv Tuner, Vhf Rf Amplifier Applications)
3SK293 - N Channel Dual Gate Mos Type (tv Tuner, Uhf Rf Amplifier Applicaitons)
3SK294 - N Channel Dual Gate Mos Type (tv Tuner, Vhf Rf Amplifier Applications)
3SK320 - N Channel Dual Gate Mes Type (uhf Band Low Noise Amp, Mix)
3TH41 - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
3TH41A - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
3Z12 - Zener Diode (voltage Detector and Suppressor Applications)
4030B - Quad Exclusive-or Gate
4066 - Quad Bilateral Switch
4069UB - Hex Inverter
47C400AN - Cmos 4-bit Microcontroller
47C421ADFVA84 - Cmos 4-bit Microcontroller
47C434N3528 - Cmos 4-bit Microcontroller
47C440BN - Cmos 4-bit Microcontroller
47C443NHK81 - Cmos 4-bit Microcontroller
47C662AN - Cmos 4-bit Microcontroller
4N25 - Photo Transistor (ac Line/digital Logic Isolator)
4N25A - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N25ASHORT - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N25SHORT - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N26A - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N26SHORT - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N27A - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N27SHORT - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N28A - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N28SHORT - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N29 - Photo Transistor (ac Line/digital Logic Isolator)
4N29A - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N29ASHORT - GAAS Ired & Photo-transistor
4N29SHORT - Pins = 6 ; Package = Dip ; Features = Jedec Replacement ; Curr. Trans. Ratio CTR (min/max) (%) = 100 (min.) ; ISOlation Voltage BVS (Vrms) = 2500 ; Additional Information =
4N30 - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N30SHORT - GAAS Ired & Photo-transistor
4N31 - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N31SHORT - GAAS Ired & Photo-transistor
4N32 - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N32A - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N32ASHORT - GAAS Ired & Photo-transistor
4N32SHORT - Pins = 6 ; Package = Dip ; Features = Jedec Replacement ; Curr. Trans. Ratio CTR (min/max) (%) = 500 (min.) ; ISOlation Voltage BVS (Vrms) = 2500 ; Additional Information =
4N33 - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N33SHORT - GAAS Ired & Photo-transistor
4N35 - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N35(SHORT) - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N35SHORT - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N36 - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N36(SHORT) - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N36SHORT - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N37 - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N37(SHORT) - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N37SHORT - Photo Transistor (ac Line/digital Logic Isolator)
4N38 - Photo Transistor (ac Line/digital Logic Isolator)
4N38A - PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
4N38Short - Pins = 6 ; Package = Dip ; Features = Jedec Type ; Curr. Trans. Ratio CTR (min/max) (%) = 10/- ; ISOlation Voltage BVS (Vrms) = 2500 ; Additional Information =
500EXH22 - Fast Recovery Diode (high Speed Rectifier Applications)
500HXD28 - Alloy-free Rectifier (rectifier Applications)
500YKH22 - Fast Recovery Diode (high Speed Rectifier Applications)
50FXFG13 - Fast Recovery Diode (high Speed Rectifier Applications)
50FXFH13 - FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
5BG2C41 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5BG2Z41 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5DG2C41 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5DG2Z11 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5DG2Z41 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5DL2C248A - High Efficiency Diode, Stack (hed) Silicon Epitaxial - Switching - Power Supply Application
5DL2C41A - High Efficiency Diode (switching Type Power Supply Converter & Chopper Applications)
5DL2C48A - HIGH EFFICIENCY DIODE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER APPLICATIONS)
5DL2CZ47A - High Efficiency Diode (switching Type Power Supply, Converter & Chopper Applications)
5DLAZ47A - Silicon Epitaxial Type High Efficiency Rectifier 200v 5a
5DLZ47A - High Efficiency Rectifier (switching Type Power Supply, Converter & Chopper Applications)
5FL2C48A - HIGH EFFICIENCY DIODE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER APPLICATIONS)
5FL2CZ47A - HIGH EFFICIENCY DIODE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER APPLICATIONS)
5FWJ2C42 - Schottky Barrier Type (high Speed Rectifier Applications)
5FWJ2C48M - Toshiba Schottky Barrier Rectifier Stack, Schottky Barrier Type
5FWJ2CZ47M - Schottk Barrier Type (switching Type Power Supply, Converter & Chopper Applications)
5GG2C41 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5GG2Z41 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5GL2CZ47A - HIGH EFFICIENCY DIODE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER APPLICATIONS)
5GLZ47A - High Efficiency Rectifier Silicon Epitaxial Type
5GUZ47 - Switching Mode Power Supply Application Converter & Chopper Application
5GUZ47 - High Efficiency Rectifier Silicon Epitaxial Type
5GWJ2C42 - Schottky Barrier Type (switching Type Power Supply, Converter & Chopper Applications)
5GWJ2C48C - SCHOTTKY BARRIER TYPE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER APPLICATIONS)
5GWJ2CZ47C - SCHOTTKY BARRIER TYPE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER APPLICATIONS)
5GWJZ47 - SCHOTTKY BARRIER TYPE (HIGH SPEED RECTIFIER APPLICATION)
5JG2C41 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5JG2Z41 - RECTIFIER STACK (HIGH-SPEED CENTER TAP)
5JL2CZ47 - High Efficiency Diode (switching Type Power Supply, Converter & Chopper Applications)
5JLCZ47 - High Efficiency Diode Stack (hed) Silicon Epitaxial Type
5JLZ47 - Silicon Epitaxial (switching Type Power Supply, Converter & Chopper Applications)
5JLZ47A - High Efficiency Rectifier Schottky Barrier Type (switching Type Power Supply, Converter & Chopper Applications)
5JUZ47 - Super Fast Recovery Diode High Efficiency Rectifier Schottky Barrier Type (switching Type Power Supply, Converter & Chopper Applications)
5THZ52 - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
5TUZ47 - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
5TUZ47C - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
5TUZ52 - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
5TUZ52C - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
5VHZ52 - Silicon Diffused Type (most Suitable For Color T.v Damper)
5VUZ47 - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
5VUZ52 - Silicon Diffused Type (horizontal Deflection Output For High Resolution Display, Color Tv)
5Z27 - Silicon Diffused Junction (power Surge Suppressor)
5Z30 - SILICON DIFFUSED JUNCTION (POWER SURGE SUPPRESSOR)
6N135 - Ired & Photo Ic (digital Logic Isolation)
6N137 - Ired & Photo Ic (degital Logic Isolation, Tele-communication, Analog Data Equipment Control)
6N138 - Ired & Photo Ic (current Loop Driver, Low Input Current Line Receiver, Coms Logic Interface)
6N139 - IRED & PHOTO IC (CURRENT LOOP DRIVER, LOW INPUT CURRENT LINE RECEIVER, COMS LOGIC INTERFACE)
7343 - Fm Pll Mpx
74HC05 - Hex Inverter (open Drain)
74HC257 - Quad 2-chanel Multiplexer (3-state)
74HC4075 - Triple 3-input Or Gate
74HC4094 - 8-bit Shift and Store Register (3-stafe)
74HC4538 - Dual Retriggerable Monostable Multivibrator
74HC541 - Octal Bus Buffer Inverting/non-inverting, 3-state Outputs
74HC590 - 8-bit Binary Counter/register With 3-state Outputs
74LCX02 - Low Voltage Quad 2-input Nor Gate With 5v Tolerant Inputs and Outputs
74LCX245 - Low Voltage Octal Bus Transceiver With 5v Tolerant Inputs and Outputs
74LCX374 - Low Voltage Octal D-type Flip-flop With 5v Tolerant Inputs and Outputs
74LVX14 - Hex Schmitt Inverter
74LVX273 - Octal D-type Flip Flop With Clear
74VCX08 - Low-voltage Quad 2-input and Gate With 3.6v Tolerant Inputs and Outputs
7525 - X-ray Thickness Gage
78M05 - 0.5a Three Terminal Positive Voltage Regulators
800EXD28 - Alloy-free Rectifier (rectifier Applications)
800EXD29 - Alloy-free Rectifier (rectifier Applications)
800EXH22 - Fast Recovery Diode (high Speed Rectifier Applications)
800FXD29 - ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS)
800JXH23 - Fast Recovery Diode (high Speed Rectifier Applications)
80C35 - Cmos 8-bit Single-chip Microcomputer (tlcs-48c)
80C39AP - Cmos 8-bit Single-chip Microcomputer (tlcs-48c)
80C49AP - CMOS 8-BIT SINGLE-CHIP MICROCOMPUTER (TLCS-48C)
82C37 - Multimode Dma Controller
82C55 - Cmos Programmable Peripheral Interface
82C79 - Programmable Keyboard / Display Interface
84C015BF-8 - Microprocessor
87C809 - Cmos 8-bit Microcontroller
87CH74F - Cmos 8-bit Microcontroller
87CM70 - Cmos 8-bit Microcontroller
87CS71F - Cmos 8-bit Microcontroller
A1015 - Pnp Epitaxial Type(audio Frequency General Purpose Amplifier, Driver Stage Amplifier)
A1358 - Transistor (audio Frequency Power Amplifier Applications)
A840 - Dual Bridge Driver
AC74HC40105AP - CMOS DIGITAL INTEGRATED CIRCUIT
AC74HC697AP - Cmos Digital Integrated Circuit
AC9272F - Cmos Digital Integrated Circuit
AD62384AP - 8ch Low Input Active Darlington Sink Driver
AD62386AP - 8ch Low Input Active Darlington Sink Driver
AD62476P - 2ch Peripheral And/nand/or/nor/drivers
AD62501P - 7 Single Driver
C1815 - Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)
C2235 - TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
C5148 - NPN TRIPLE DIFFUSED MESA TYPE (DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)
C5150 - NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR GIHG RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
CMS02 - Switching Mode Power Supply Applications Portable Equipment Battery Applications
CMS03 - Toshiba Schottky Barrier Rectifier Schottky Barrier Type
CMS04 - Switching Mode Podwe Supply Appications Portable Equipment Battery Applications
CMS05 - Swithing Mode Power Supply Applications Portable Equipment Battary Applications
CMS06 - Toshiba Schottky Barrier Rectifier Schottky Barrier Type
CMS07 - Switching Mode Power Supply Applications Portable Equipment Battery Applications
CMS08 - Toshiba Schottky Barrier Rectifier Schottky Barrier Type
CMS09 - Switching Mode Power Supply Applications Portable Equipment Battery Applications
CMS10 - Toshiba Schottky Barrier Rectifier Schottky Barrier Type
CMS11 - Toshiba Schottky Barrier Rectifier Schottky Barrier Type
CNY17-2 - Ired & Photo-transistor (ac Line/digital Logic Isolator)
CNY17-3 - IRED & PHOTO-TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
CRG01 - Diffused Type (general Purpose Rectifier Applications)
CRG02 - DIFFUSED TYPE (GENERAL PURPOSE RECTIFIER APPLICATIONS)
CRH01 - High Efficiency Rectifier (switching Type Power Supply Applications)
CRS01 - Schottky Barrier Type (high Speed Rectifier Applications)
CRS02 - Trench Schottky Barrier Type (switching Type Power Supply, Portable Equipment Battery Applications)
CRS03 - Schottky Barrier Type (switching Type Power Supply, Portable Equipment Battery Applications)
CRS04 - Schottky Barrier Type (switching Type Power Supply, Portable Equipment Battery Applications)
CRS06 - Schottky Barrier Type (switching Type Power Supply, Portable Equipment Battery Applications)
CRS08 - Switching Mode Power Supply Applications Portable Equipment Battery Applications
CRY62 - Toshiba Zener Diode Silicon Epitaxial Type
CRY68 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRY75 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRY82 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRY91 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ10 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ11 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ12 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ13 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ15 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ16 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ18 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ20 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ22 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ24 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ27 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ30 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ33 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ36 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ39 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ43 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZ47 - TOSHIBA Zener Diode Silicon Epitaxial Type
CRZxx - TOSHIBA Zener Diode Silicon Epitaxial Type
CUS01 - Portable Eqiupment Battery Application
CUS02 - Schottky Barrier Rectifier Schttky Barrier Type
CYN17-4 - IRED & PHOTO-TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
D1140 - Npn Epitaxial Type (micro Motor Drive, Hammer Drive, Switching, Power Amplifier Applications)
D2499 - Npn Triple Diffused Mesa Type (horizontal Deflection Output For Color Tv)
DF2S12FU - Diode (diodes For Protecting Against Esd)
DF3A6 - Diodes (diodes For Protecting Against Esd)
DF3A6.8FE - Toshiba Diodes For Protecting Against Esd Epitaxial Planar Type
DF3A6.8FU - Diodes (diodes For Protecting Against Esd)
DF3A6.8LFE - Diodes For Protecting Against Esd
DF3A6.8LFU - Toshiba Diodes For Protecting Against Esd Epitaxial Planar Type
DF3A8.2LFE -
DF3A8.2LFU - Diodes For Protecting Against Esd
DF546 - Diodes (diodes For Protecting Against Esd)
DF5A6 - Diodes (diodes For Protecting Against Esd)
DF5A6.8F - Toshiba Diodes For Protecting Against Esd Epitaxial Planar Type
DF5A68FU - Diodes For Protecting Against Esd
DF5A6.8LFU - Diodes For Protecting Against Esd
DF5A8 - DIODES (DIODES FOR PROTECTING AGAINST ESD)
DF5A82FU - Diodes (diodes For Protecting Against Esd)
DF5A8.2LF - Diodes for Protecting Against ESD
DS2604 - NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
ENV-05H-01 - Angular Velocity Sensor
GT1013J312 - N Channel IGBT 600v 10a
GT10J301 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT10J303 - N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT10J311 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT10J311SM - Vces (V) = 600 ; Ic (A) = 10 ; Vce (sat) (V) = 2.7 ; PC (W) = 80 ; TRR Max (ns) = 200 ; Package = TO3P(SM) ; Main Application = Inverter/ups ; Feature = Power SMD
GT10J312 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT10J312(SM) - N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT10J312SM - Vces (volts) = 600 ; Ic (amps) = 10 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4 ; Toff (usec) = 0.5 ; Additional Information =
GT10J321 - Toshiba Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT10Q101 - High Power Switching Applications
GT10Q301 - High Power Switching Applications Motor Control Applications
GT15G101 - N Channel IGBT (strobe Flash Applications)
GT15J101 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT15J102 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT15J103 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT15J103SM - Vces (volts) = 600 ; Ic (amps) = 15 ; Vce (sat) Max = 4 ; Ton (usec) = 0.8 ; Toff (usec) = 1 ; Additional Information = More Info
GT15J121 - Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT15J301 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT15J311 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT15J311SM - Vces (volts) = 600 ; Ic (amps) = 15 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4 ; Toff (usec) = 0.5 ; Additional Information =
GT15J321 - High Power Switching Applications Fast Switching Applications
GT15J331 - High Power Switching Applications Motor Control Applications
GT15M321 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q101 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT15Q102 - High Power Switching Applications
GT15Q301 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT15Q311 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20D101 - N Channel Type (high Power Amplifier Application)
GT20D201 - P Channel Type (high Power Amplifier Applications)
GT20G101 - N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
GT20G101SM - N Channel IGBT (strobe Flash Applications)
GT20G102 - N Channel IGBT (strobe Flash Applications)
GT20G102SM - N Channel IGBT (strobe Flash Applications)
GT20J101 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J301 - N Channel (high Power Switching, Motor Control Applications)
GT20J311 - N Channel (high Power Switching, Motor Control Applications)
GT20J311SM - Vces (volts) = 600 ; Ic (amps) = 20 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4 ; Toff (usec) = 0.7 ; Additional Information =
GT20J321 - High Power Switching Applications Fast Switching Applications
GT25G101 - N Channel IGBT (strobe Flash Applications)
GT25G101SM - N Channel IGBT (strobe Flash Applications)
GT25G102 - N Channel IGBT (strobe Flash Applications)
GT25G102SM - N Channel IGBT (strobe Flash Applications)
GT25J101 - N Channel (high Power Switching, Motor Control Applications)
GT25J102 - N Channel (high Power Switching, Motor Control Applications)
GT25Q101 - N Channel IGBT(high Power Switching, Motor Control Applications)
GT25Q102 - N Channel Ibgt (high Power Switching Applications)
GT25Q301 - N Channel IGBT(high Power Switching, Motor Control Applications)
GT30J101 - Silicon N Channel IGBT
GT30J121 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J301 - N Channel IGBT(high Power Switching, Motor Control Applications)
GT30J311 - N Channel IGBT(high Power Switching, Motor Control Applications)
GT30J311SM - Vces (V) = 600 ; Ic (A) = 30 ; Vce (sat) (V) = 2.7 ; PC (W) = 145 ; TRR Max (ns) = 200 ; Package = TO3P(SM) ; Main Application = Inverter/ups ; Feature = Power SMD
GT30J322 - N Channel Mos Type (The 4th Generation Current Resonance Inverter Switching Applications)
GT30J324 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40M101 - N Channel IGBT (high Power Switching Applications)
GT40M301 - N Channel Tmos Type(high Power Swithcing Applications)
GT40Q321 - Voltage Resonance Inverter Switching Application
GT40Q322 - Voltage Resonance Inverter Switching Application
GT40T101 - N Channel Mos Type (high Power Swithcing Applications)
GT40T301 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50G321 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J102 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT50J121 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J301 - N Channel IGBT (high Power Switching, Motor Control Applications)
GT50J322 - N Channel Mos Type (the 4th Ceneration Current Resonace Inverter Swithcing Applications)
GT50J325 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G103 - N Channel Mos Type (strobe Flash Applications)
GT5G131 - Strobe Flash Applications
GT5J301 - N Channel IGBT (high Power Switching Motor Control Applications)
GT5J311 - N Channel IGBT(high Power Switching, Motor Control Applications)
GT5J311SM - Vces (V) = 600 ; Ic (A) = 5 ; Vce (sat) (V) = 2.7 ; PC (W) = 45 ; TRR Max (ns) = 200 ; Package = TO-220SM ; Main Application = Inverter/ups ; Feature = Power SMD
GT5J321 - High Power Switching Applications
GT5J331(SM) - N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT5J331SM - N-channel IGBT (High Power Switching, Motor Control Applications)
GT60J321 - The 4th Generation Soft Switching Applications
GT60J322 - The 4th Generation Soft Switching Applications
GT60M104 - N Channel IGBT (high Power Switching Applications)
GT60M301 - N Channel Mos Type (high Power Swithcing Applications)
GT60M302 - N Channel Mos Type (high Power Switching Applications)
GT60M303 - N Channel Mos Type (high Power Switching Applications)
GT60M322 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M323 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321 - High Power Switching Applications The 4th Generation
GT80J101 - N Channel Mos Type (high Power Switching Applications)
GT8G103 - N Channel Mos Type (strobe Flash Applications)
GT8G121 - N Channel Mos Type (strobe Flash Applications)
GT8G131 - N Channel Mos Type (strobe Flash Applications)
GT8G132 - Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8J101 - N Channel IGBT(high Power Switching, Motor Control Applications)
GT8J102 - Vces (volts) = 600 ; Ic (amps) = 8 ; Vce (sat) Max = 4 ; Ton (usec) = 0.8 ; Toff (usec) = 1 ; Additional Information = More Info
GT8J102SM - N Channel IGBT(high Power Switching, Motor Control Applications)
GT8Q101 - N Channel IGBT(high Power Switching, Motor Control Applications)
GT8Q102 - N Channel IGBT(high Power Switching, Motor Control Applications)
GT8Q102SM - N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
HC123 - DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
HC123 - DUAL MONOSTABLE MULTIVIBRATOR. RETRIGGERBLE/NON-RETRIGGERBLE
HC125 - QUAD BUS BUFFER
HC257 - QUAD 2-CHANEL MULTIPLEXER (3-STATE)
HC4052 - 8-CHANNEL ANALOG MULTIPLEXER/DEMULITIPLEXER
HC646 - OCTAL BUS TRANSCEIVER/REGISTER(3-STATE)
HM1K03FU - FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
HN1A01F - Pnp Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN1A01FU - PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN1B01F - Npn Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN1B01FU - Npn Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN1B04FU - Npn Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN1C01F - Npn Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN1C01FU - Npn Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN1C03F - Npn Epitaxial Type (for Muting and Switching Applications)
HN1C03FU - Npn Epitaxial Type (for Muting and Switching Applications)
HN1D01F - Diode (ultral High Speed Switching Applications)
HN1D01FU - Diode (ultra High Speed Switching Applications)
HN1D02F - Diode (ultra High Speed Switching Applications)
HN1D02FU - Diode (ultra High Speed Switching Applications)
HN1D03F - Ultra High Speed Switching Application
HN1D03FU - Diode (ultra High Speed Switching Applications)
HN1J02FU - P Channel Mos Type (high Speed Switching, Analog Switch Applications)
HN1K02FU - N Channel Mos Type (high Speed Switching, Analog Switch Applications)
HN1K03FU - N Channel Mos Type (high Speed Switching, Analog Switch Applications)
HN1K04FU - Toshiba Field Effect Transistor Silicon N Channel Mos Type
HN1K05FU - Toshiba Field Effect Transistor Silicon N Channel Mos Type
HN1K06FU - Toshiba Field Effect Transistor Silicon N Channel Mos Type
HN1L02FU - N Channel Mos Type, P Channel Mos Type (high Speed Switching, Analog Switch Applications)
HN1L03FU - N,p Channel Mos Type (high Speed Switching, Analog Switch Applications)
HN1V01H - Epitaxial Planar Type (am Radio Band Tuning Applications)
HN1V02H - Epitaxial Planar Type (am Radio Band Tuning Applications)
HN20S01F - Silicon Epitaxial Schottky Barrier Type Diode
HN20S01FU - Silicon Epitaxial Schottky Barrier Type Diode
HN2A01FU - Pnp Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN2C01FU - Npn Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN2C10FT - VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
HN2C10FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN2C11FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN2C12FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN2D01F - Diode (ultra High Speed Switching Applications)
HN2D01FU - Ultra High Speed Silicon Epitaxial Planar Type Diode
HN2D02FU - Diode (ultra High Speed Switching Applications)
HN2S01F - Diode (low Voltage High Speed Switching Applications)
HN2S01FU - Diode (low Voltage High Speed Switching Applications)
HN2V02H - Epitaxial Planar Type (am Radio Band Tuning Applications)
HN3B01F - Pnp Epitaxial Type (audio Frequency General Purpose Amplifier Applications)
HN3B02FU - Toshiba Transistor Silicon Pnp⋅npn Epitaxial Type (pct Process)
HN3C01F - Npn Epitaxial Planar Type (tv Tunerm Vhf Converter, Tv Vhf Rf Amplifier Applications)
HN3C01FU - Npn Epitaxial Planar Type (tv Tunerm Vhf Converter, Tv Vhf Rf Amplifier Applications)
HN3C02F - Npn Epitaxial Planar Type (tv Tuner, Uhf Oscillator, Converter Applications)
HN3C02FU - Npn Epitaxial Planar Type (tv Tuner, Uhf Converter, Uhf Rf Amplifier Applications)
HN3C03F - Npn Epitaxial Planar Type (tv Tuner, Uhf Oscillator, Converter Applications)
HN3C03FU - Npn Epitaxial Planar Type (tv Tuner, Uhf Converter, Uhf Rf Amplifier Applications)
HN3C09F - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C09FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C10F - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C10FT - Vhf-uhf Band Low Noise Amplifier Applications
HN3C10FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C11F - NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
HN3C11FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C12 - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C12 - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C12F - NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
HN3C12FU - NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
HN3C13FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C14 - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C14FU - NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
HN3C15FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C16FT - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C16FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C17FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C18FT - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3C18FU - Npn Epitaxial Planar Type (vhf~uhf Band Low Noise Amplifier Applications)
HN3G01 - N Channel Junction Type Fet Silicon Npn Epitaxial Type Transistor
HN3G01J - N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
HN4C05JU - Multi Chip Discrete Device (audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications)
HN4K03JU - N Channel Mos Type (high Speed Switching, Analog Switch Applications)
HN7G01FU - Toshiba Multi Chip Discrete Device
HN7G02FU - Toshiba Multi Chip Discrete Device
HN9C01FT - TRANSISTOR SILICON MPM EPITAXIAL PLANAR TYPE
IK-540A - Toshiba Ik-540a Camera
J680 - Field Effect Transistor Silicon P-Channel MOS Type (Ґр-MOS V)
JDH2S01T - Uhf Band Mixer
JDP2S01AFS - Toshiba Diode Silicon Epitaxial Pin Type
JDP2S01E - Uhf~vhf Band Rf Attenuator Applications
JDP2S01S - Uhf~vhf Band Rf Attenuator Applications
JDP2S01T - Uhf~vhf Band Rf Attenuator Applications
JDP2S01U - Uhf~vhf Band Rf Attenuator Applications
JDP2S02AFS - Toshiba Diode Silicon Epitaxial Pin Type
JDP2S02S - Uhf~vhf Band Rf Attenuator Applications
JDP2S04E - Vhf~uhf Band Rf Attenuator Applications
JDP4P02U - Uhf~vhf Band Rf Attenuator Applications
JDV2S01E - Vco For Uhf Band
JDV2S01S - Toshiba Diode Silicon Epitaxial Planar Type
JDV2S02E - Vco For Uhf Band
JDV2S02S - VR (v) = 10 ; Ir (nA) = 3 ; CT(1) (pF) = 2 ; CT(2) (pF) = 1 ; CT(1)/CT(2) = 2 ;.rs(Typ.) Ohms = 0.6 ; Package = Sesc ; Application = UHF Vco
JDV2S05E - VR (v) = 10 ; Ir (nA) = 3 ; CT(1) (pF) = 3.85 to 4.55 ; CT(2) (pF) = 1.94 to 2.48 ; CT(1)/CT(2) = 1.9 TYP ;.rs(Typ.) Ohms = 0.3 ; Package = Esc ; Application = UHF Vco
JDV2S05S - VR (v) = 10 ; Ir (nA) = 3 ; CT(1) (pF) = 3.85 to 4.55 ; CT(2) (pF) = 1.94 to 2.48 ; CT(1)/CT(2) = 1.9 ;.rs(Typ.) Ohms = 0.3 ; Package = Sesc ; Application = UHF Vco
JDV2S06S - Toshiba Diode Silicon Epitaxial Planar Type
JDV2S07S - Vco For Uhf Band Radio
JDV2S08S - Vco For Uhf Band Radio
JDV2S09S - Vco For Uhf Band
JDV2S10S - Toshiba Diode Silicon Epitaxial Planar Type
JDV2S10T - Vco For Uhf Band Radio
JDV2S14E - Toshiba Diode Silicon Epitaxial Planar Type
JDV3C11 - Electronic Tuning Applications Of Fm Receivers
JDV4P08U - Toshiba Variable Capacitance Diode Silicon Epitaxial Planar Type
JS8850A-AS - Microwave Power Gaas Fet
JT6A11AX-AS - CMOS 1 CHIP LSI FOR LCD SLECTRONIC CALCUTATOR
JT6A36X-AS - CMOS 1 CHIP LSI FOR LCD ELECTRONIC CALCULATOR
JT6M14-CS - CMOS 1 CHIP LSI FOR LCD ELECTRONIC CALCULATOR
JT6M19-AS - CMOS 1 CHIP LSI FOR LCD ESECTRONIC CALCULATOR
JT6M23A-AS - Cmos 1 Chip Lsi For Lcd Electronic Calculator
JT6M45-AS - CMOS 1 CHIP LSI FOR LCD ELECTRONIC CALCULATOR
JT6M72-AS - CMOS 1 CHIP LSI FOR LCD ELECTRONIC CALCULATOR
JT7987AY-CS - Cmos 1 Chip Lsi For Lcd Electronic Calculator
JT7988Y-AS - Cmos 1 Chip Lsi For Lcd Electronic Calculator
JT9673-AS - Lcd Display Stopwatch Lsi
JT9947X-AS - Cmos 1 Chip Lsi For Lcd Electronic Calculator
JTC83230-0021S - Single-Chip CMOS LSI for Calculators with Printers
JTMP0360-002S - Lsi For Lcd Watches
K170 - FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
k246 - N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER and DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
K2717 - N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER and MOTOR DRIVE APPLICATIONS)
K2750 - N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER and MOTOR DRIVE APPLICATIONS)
LTD104C11S - 26cm Colour Tft Lcd Module
LTM06C310 - 16cm Colour Tft-lcd Module 6.3 Type
LTM08C343S - 21cm Colour Tft-lcd Module
LTM08C351 - 21cm Color Tft-lcd Module 8.4 Type
LTM10C306L - Liquid Crystal Display Division Product Information
LTM10C348S - Liquid Crystal Display Division Product Information
LTM15C441 - Liquid Crystal Display Product Information
M12JZ47 - Ac Power Control Applications
M8G45 - AC POWER CONTROL APPLICATIONS
M8G48 - AC POWER CONTROL APPLICATIONS
M8J45 - AC POWER CONTROL APPLICATIONS
M8J45A - AC POWER CONTROL APPLICATIONS
M8J48 - AC POWER CONTROL APPLICATIONS
MCU11E9 - THE TMP68HC11E9 IS AN ADVANCED 8-BIT MICROCONTROLLER (MCU) WITH HIGHLY SOPHISTICATED ON-CHIP PERIPHERAL
MG100G2CL1 - Technical Data
MG100G2DL1 - TECHNICAL DATA
MG100G2JL1 - TECHNICAL DATA
MG100J1BS11 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100J1ZS40 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100J2YS50 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100J6ES50 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100J7KS50 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q1JS40 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q1ZS40 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q1ZS50 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q2YS40 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q2YS42 - Vces (volts) = 1200 ; Ic (amps) = 100 ; Vce (sat) Max = 4 ; Ton (usec) = 0.8 ; Toff (usec) = 1.5 ; Additional Information = More Info
MG100Q2YS42AC - Transistor IGBT Power Module
MG100Q2YS50 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q2YS50A - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q2YS51 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q2YS51A - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG100Q2YS65H - Toshiba IGBT Module Silicon N Channel IGBT
MG10Q6ES50A - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG10Q6ES51A - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG1200FXF1US51 - Toshiba Gtr Module Silicon N-channel IGBT
MG1200V1US51 - Toshiba Gtr Module Silicon N−channel IGBT
MG120V2YS40 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG150J1BS11 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG150J1JS50 - High Power Switching Applications Motor Control Applications
MG150J1ZS50 - Vces (volts) = 600 ; Ic (amps) = 150 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4* ; Toff (usec) = 0.5*
MG150J2YS50 - N Channel IGBT (high Pwer Switching, Motor Control Applications)
MG150J7KS50 - Toshiba Gtr Module Silicon N Channel IGBT
MG150J7KS60 - Toshiba Gtr Module Silicon N Channel IGBT
MG150Q1JS40 - N Channel IGBT (high Power Switching, Chopper Applications)

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